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AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip GENERAL DESCRIPTION AVX has combined the best electrical characteristics of its TransGuard® Transient Voltage Suppressors (TVS) and its Feedthru Capacitors into a single chip for state-of-the-art overvoltage circuit protection and EMI reduction over a broad range of frequencies. This unique combination of multilayer ceramic construction in a feedthru configuration gives the circuit designer a single 0805 chip that responds to transient events faster than any TVS device on the mar- ket today, and provides significant EMI attenuation when in the off-state. The reduction in parallel inductance, typical of the feedthru chip construction when compared to the construction of standard TVS or ceramic capacitor chips, gives the TransFeed product two very important electrical advan- tages: (1) faster “turn-on” time. Calculated response times of <200 pSec are not unusual with this device, and mea- sured response times range from 200 – 250 pSec. The TransFeed “turn-on” characteristic is less than half that of an equivalent TransGuard ® part — and TransGuards® clamp transient voltages faster than any other bipolar TVS solution such as diodes; (2) the second electrical advantage of lower parallel inductance, coupled with optimal series inductance, is the enhanced attenuation characteristics of the TransFeed product. Not only is there significantly greater attenuation at a higher self-resonance frequency, but the roll-off characteristic becomes much flatter, result- ing in EMI filtering over a much broader frequency spec- trum. Typical applications include filtering/protection on Microcontroller I/O Lines, Interface I/O Lines, Power Line Conditioning and Power Regulation. TYPICAL APPLICATIONS

  • Fingerprint ID Circuit
  • Magnetic Field Circuit
  • LCD Dashboard Driver Where designers are concerned with both transient voltage protection and EMI attenuation, either due to the electrical performance of their circuits or due to required compliance to specific EMC regulations, the TransFeed product is an ideal choice. Y Capaci tance Tolerance Y = +100/-50% DC Resistance 1 = 0.150 Ohms 2 = 0.200 Ohms 3 = 0.250 Ohms E Feedthru Current D = 500 mA E = 750 mA F = 1.0 Amp D Packaging Code Pcs./Reel D = 1,000 R = 4,000 T = 10,000 V Varistor Chip Size 2 = 0805 3 = 0612 F Feedthru Capacitor No. of Elements Voltage 05 = 5.6VDC 09 = 9.0VDC 14 = 14.0VDC 18 = 18.0VDC A Energy Rating X = 0.05J A = 0.1J C = 0.3J 150 Varistor Clamping Voltage 150 = 18V 200 = 22V 300 = 32V 400 = 42V 500 = 50V P Termination Finish P = Ni/Sn Alloy (Plated) HOW TO ORDER Schematic Diagram Electrical Model IN OUT IN LS LS RV C RP RON LP OUT

TRANSFEED ELECTRICAL SPECIFICATIONS TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip 18LC 18A 14A -10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) TransFeed 0.1J 18C 14C -10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) TransFeed 0.3J dB Attenuation vs Frequency AVX Working Working Breakdown Clamping Maximum Transient Peak Typical DC Maximum Part Number Voltage Voltage Voltage Voltage Leakage Energy Current Cap Resistance Feedthru (DC) (AC) Current Rating Rating Current Termination Finish Code Packaging Code VW (DC) DC Working Voltage (V) VW (AC) AC Working Voltage (V) VB Typical Breakdown Voltage (V @ 1mADC) VB Tol V B Tolerance is ± from Typical Value VC Clamping Voltage (V @ 1A 8x20μS ) IL Maximum Leakage Current at the Working Voltage (μA) ET Transient Energy Rating (J, 10x1000μS) IP Peak Current Rating (A, 8x20μS) Cap Typical Capacitance (pF) @ 1MHz and 0.5 V DCR DC Resistance (Ohms) IFT Maximum Feedthru Current (A)

AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip BW T S X L CL EW W BL T P INPUT OUTPUT LC P S W DIMENSIONS mm (inches) LWT B W B L E W X S RECOMMENDED SOLDER PAD LAYOUT (Typical Dimensions) mm (inches) TPS WLC

4 Pad Layout

DIMENSIONS mm (inches) mm (inches) LW T B WB L E S P AB C DE F TransFeed Array - V3F4 Series TVS Protection and EMI Attenuation in a 4-Element Array W BLES P BW T D L E D A B C A F V3F4

-10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) V2F105A150Y2E VC080505A150 5.6V, 0.1J -10 -20 -30 -40 -50 -60 0.01 0.1 1 Frequency (GHz) (dB) V2F114A300Y2E VC080514A300 14V, 0.1J -10 -20 -30 -40 -50 -60 0.01 0.1 1 Frequency (GHz) (dB) V2F118A400Y2E VC080518A400 18V, 0.1J -10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) V2F118X500Y3D VC08LC18A500 18V, 0.05J -10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) V2F105C150Y1F VC080505C150 5.6V, 0.3J -10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) V2F118C400Y1F VC080518C400 18V, 0.3J -10 -20 -30 -40 -50 -60 -70 0.01 0.1 1 Frequency (GHz) (dB) V2F114C300Y1F VC080514C300 14V, 0.3J INSERTION LOSS COMPARISON (TransFeed vs TransGuard®) 0805 – dB vs Frequency TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS

0805 – 0.1 Joule CURRENT vs TEMPERATURE 0805 – 0.3 Joule TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS 18LC 18V 14V Note: Dashed Portions Not Guaranteed 0.3 0.5 0.75 Current (Amps) Component Temperature (°C) 18V 14V 0.250 0.5 0.75 Current (Amps) Component Temperature (°C)

Where: R v = Voltage Variable resistance (per VI curve) Rp ≥1 0 12 Ω C = defined by voltage rating and energy level Ron = turn on resistance Lp = parallel body inductance Discrete MLVF Model Where: R v = Voltage Variable resistance (per VI curve) Rp = Body IR C = defined by voltage rating and energy level Ron = turn on resistance Lp = minimized parallel body inductance Ls = series body inductance LS LS RV C RP Ron LP To Device Requiring Protection Solder Pad Solder Pad Solder Pad PCB Trace To Device Requiring Protection R V C RP Ron LP Solder Pad TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS AVX Multilayer Feedthru Varistors (MLVF) are an ideal choice for system designers with transient strike and broadband EMI/RFI concerns. Feedthru Varistors utilize a ZnO varistor material and the electrode pattern of a feedthru capacitor. This combination allows the package advantage of the feedthru and material advantages of the ZnO dielectric to be optimized. ZnO MLV Feedthrus exhibit electrical and physical advantages over standard ZnO MLVs. Among them are: 1. Faster Turn on Time 2. Broadband EMI attenuation 3. Small size (relative to discrete MLV and EMI filter schemes) The electrical model for a ZnO MLV and a ZnO Feedthru MLV are shown below. The key difference in the model for the Feedthru is a transformation in parallel to series induc- tance. The added series inductance helps lower the injected transient peak current (by 2πfL) resulting in an additional ben- efit of a lower clamping voltage. The lowered parallel induc- tance decreases the turn on time for the varistor to <250ps. FEEDTHRU VARISTORS

AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS

APPLICATIONS

  • EMI Suppression
  • Broadband I/O Filtering
  • Vcc Line Conditioning

FEATURES

  • Small Size
  • Low ESR
  • Ultra-fast Response Time
  • Broad S21 Characteristics MARKET SEGMENTS
  • Computers
  • Automotive
  • Power Supplies
  • Multimedia Add-On Cards
  • Bar Code Scanners
  • Remote Terminals
  • Medical Instrumentation
  • Test Equipment
  • Transceivers
  • Cellular Phones / Pagers A comparison table showing typical element parameters and resulting performance features for MLV and MLVF is shown above. MLVF PARAMETER MLV 0805 0805 5ph Ls typical N/A <600nh Lp typical <1.5nh <0.025Ω Ron typical <0.1Ω 100pf to 2.5nf C typical 100pf to 5.5nf see VI curves Rv typical see VI curves >0.25 x 1012Ω Rp typical >1 x 1012Ω <250ps Typical turn on time <500ps Typical frequency response TYPICAL CIRCUITS REQUIRING TRANSIENT VOLTAGE PROTECTION AND EMI FILTERING The following applications and schematic diagrams show where TransFeed TVS/ EMI filtering devices might be used:
  • System Board Level Interfaces: (Fig. 1) Digital to RF Analog to Digital Digital to Analog
  • Voltage Regulation (Fig. 2)
  • Power Conversion Circuits (Fig. 3)
  • GaAs FET Protection (Fig. 4) REGULATOR + POWER MANAGEMENT CHIP ASIC INTERFACE CARD MAIN POWER +3.3V +5V +12V +3.3V +1.8V INPUT OUTPUT Fig. 2 – Voltage Regulators Fig. 3 – Power Conversion Circuits/Power Switching Circuits Fig. 4 – GaAs FET Protection DIGITAL BOARD DIGITAL BOARD RF BOARD Sensor/Keyboard/ Touchscreen Input By X Bus ANALOG BOARD ANALOG BOARD Sensor Input Display DIGITAL BOARD Keyboard Fig. 1 – System Interface SPECIFICATION COMPARISON