V15K100C VISHAY | Alldatasheet
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www.vishay.com Vishay General Semiconductor Revision: 01-Aug-2019 1 Document Number: 87483 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.49 V at IF = 5 A DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA PRIMARY CHARACTERISTICS IF(AV) 2 x 7.5 A VRRM 100 V IFSM 140 A VF at IF = 7.5 A (TA = 125 °C) 0.55 V TJ max. 150 °C Package FlatPAK 5 x 6 Circuit configuration Common cathode FlatPAK 5 x 6 5, 6, 7, 8 3, 4 1, 2 333DDD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V15K100C UNIT Device marking code V1510C Maximum repetitive peak reverse voltage V RRM 100 V Maximum DC forward current per device IF(AV) (1) 15 A IF(AV) (2) 4.2 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 140 A Operating junction temperature range T J (3) -40 to +150 °C Storage temperature range T STG -55 to +150 °C
www.vishay.com Vishay General Semiconductor Revision: 01-Aug-2019 2 Document Number: 87483 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient (3) Mounted on infinite heat sink; thermal resistance RJM - junction-to-mount Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode I F = 5 A TA = 25 °C VF (1) 0.54 - V IF = 7.5 A 0.61 0.69 IF = 5 A TA = 125 °C 0.49 - IF = 7.5 A 0.55 0.63 Reverse current per diode VR = 70 V TA = 25 °C IR (2) 0.01 - mA TA = 125 °C 5 - VR = 100 V TA = 25 °C - 0.5 TA = 125 °C 9 25 Typical junction capacitance per diode 4.0 V, 1 MHz C J 910 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TYP. MAX. UNIT Thermal resistance per device R JA (1)(2) 75 - °C/W RJM (3) 2.5 3.5 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V15K100C-M3/H 0.10 H 1500 7" diameter plastic tape and reel V15K100C-M3/I 0.10 I 6000 13" diam eter plastic tape and reel V15K100CHM3/H (1) 0.10 H 1500 7" diameter plastic tape and reel V15K100CHM3/I (1) 0.10 I 6000 13" diameter plastic tape and reel
www.vishay.com Vishay General Semiconductor Revision: 01-Aug-2019 3 Document Number: 87483 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 100 1000 10000 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line Average Forward Rectified Current (A) Mount Temperature (°C) RthJM = 2.5 °C/W RthJA = 75 °C/W TM measured at cathode terminal mount typical values 100 1000 10000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0123456789 1 0 Axis Title 1st line 2nd line 2nd line Average Power Loss (W) Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 1.0 D = tp/T T tp D = 0.8 D = 0.5 100 1000 10000 0.1 100 Axis Title 2nd line Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 100 °C TJ = 125 °C TJ = 150 °C TJ = -40 °C TJ = 25 °C 100 1000 10000 0.0001 0.001 0.01 0.1 100 20 40 60 80 100 Axis Title 1st line 2nd line 2nd line Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 150 °C TJ = 125 °CTJ = 100 °C TJ = -40 °C TJ = 25 °C 100 1000 10000 100 1000 10 000 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line Junction Capacitance (pF) Reverse Voltage (V) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 100 1000 10000 100 0.01 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line Transient Thermal Impedance (°C/W) t - Pulse Duration (s) Junction to ambient
www.vishay.com Vishay General Semiconductor Revision: 01-Aug-2019 4 Document Number: 87483 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Notes
- Dimensioning and tolerancing per ASME Y14.5-2009
- Dimensions D1 and E1 do not include mold flash or gate burrs
- Dimension (XX) means reference only DIM. INCHES MILLIMETERS c 0.008 - 0.014 0.20 - 0.35 e 0.050 BSC 1.27 BSC L1 0.019 - 0.043 0.48 - 1.10 L2 0.012 - 0.031 0.30 - 0.80 0.050 (1.270) 0.039 (1.000) 0.030 (0.750) 0.191 (4.840) 0.259 (6.590) 0.055 (1.400) 0.180 (4.560) 0.219 (5.550) 0.022 (0.560) FlatPAK 5 x 6 PCB FOOTPRINT 4 x L1 6 x e M 4 x L2 2 x b1 BOTTOM VIEW (K) 8 x b (d1) (E3) A c SIDE VIEW 8 x Θ E D TOP VIEW (2 x d2) (8 x a) E1 F1 F2 5 6 7 8 4 321 123 4 5678 F1F2
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