V10PW10 VISHAY | Alldatasheet

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www.vishay.com Vishay General Semiconductor Revision: 04-Mar-2021 1 Document Number: 98183 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A LINKS TO ADDITIONAL RESOURCES

FEATURES

  • Very low profile - typical height of 1.3 mm
  • Trench MOS Schottky technology
  • Ideal for automated placement
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 100 V IFSM 180 A VF at IF = 10 A (TJ = 125 °C) 0.58 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Single SlimDPAK (TO-252AE) eSMP® Series K PIN 1 K HEATSINKPIN 2 333DDD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10PW10 UNIT Device marking code V10PW10 Maximum repetitive peak reverse voltage V RRM 100 V Maximum average forward rectified current (Fig. 1) I F(AV) (1) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 180 A Operating junction temperature range T J (2) -40 to +150 °C Storage temperature range T STG -55 to +150 °C

www.vishay.com Vishay General Semiconductor Revision: 04-Mar-2021 2 Document Number: 98183 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA (2) Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage I F = 5.0 A TJ = 25 °C VF (1) 0.51 - VIF = 10 A 0.63 0.68 IF = 5.0 A TJ = 125 °C 0.45 - IF = 10 A 0.58 0.63 Reverse current VR = 70 V TJ = 25 °C IR (2) 0.007 - mATJ = 125 °C 5.1 - VR = 100 V TJ = 25 °C - 0.15 TJ = 125 °C 10 20 Typical junction capacitance 4.0 V, 1 MHz C J 1190 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10PW10 UNIT Typical thermal resistance R θJA (1)(2) 65 °C/WRθJM (3) 2.5 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PA CKAGE CODE BASE QUANTITY DELIVERY MODE V10PW10-M3/I 0.20 I 4500 13" diameter plastic tape and reel V10PW10HM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel

www.vishay.com Vishay General Semiconductor Revision: 04-Mar-2021 3 Document Number: 98183 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 2nd line 100 1000 10000 0 25 50 75 100 125 150 1st line 2nd line 2nd line Average Forward Rectified Current (A) Mount Temperature (°C) TM measured at cathode terminal mount typical values RthJM = 2.5 °C/W RthJA = 65 °C/W 100 1000 10000 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0123456789 1 0 1 1 1 2 1st line 2nd line 2nd line Average Power Loss (W) Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 1.0 D = tp/T T tp D = 0.8 D = 0.5 100 1000 10000 0.1 100 2nd line Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 125 °C TJ = 100 °C TJ = 150 °C TJ = -40 °C TJ = 25 °C 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 1st line 2nd line Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 150 °CTJ = 125 °CTJ = 100 °C TJ = -40 °C TJ = 25 °C 100 1000 10000 100 1000 10 000 0.1 1 10 100 1st line 2nd line 2nd line Junction Capacitance (pF) Reverse Voltage (V) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 100 1000 10000 0.1 100 0.01 0.1 1 10 100 1st line 2nd line 2nd line Transient Thermal Impedance (°C/W) t - Pulse Duration (s) Junction to ambient

www.vishay.com Vishay General Semiconductor Revision: 04-Mar-2021 4 Document Number: 98183 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 100 1000 10000 0123456789 1 0 1st line 2nd line 2nd line Thermal Resistance (°C/W) Copper Pad Areas (cm2) S (cm2) Epoxy printed circuit board FR4 copper thickness = 70 µm (9.40) (8.60) 0.370 0.339 (6.72) (6.48) 0.265 0.255 (6.32) (6.08) 0.249 0.239 (0.70) (0.30) 0.028 0.012 (0.41) (0.25) 0.016 0.010 (1.40) (1.20) (0.20) (0.00) 0.008 0.000 (1.40) (1.00) 0.055 0.039 (5.70) (5.30) 0.224 0.209 MIN.0.240 (6.10) MIN.0.235 (5.97) REF.0.386 (9.80) MIN.0.075 (1.90) MIN.0.055 (1.40)NOM.0.090 (2.29) 0.055 0.047 0.090 (2.29) NOM. 0.180 (4.57) NOM. (0.90) (0.70) 0.035 0.028 NOM.0.205 (5.20) Mounting Pad Layout SlimDPAK (TO-252AE)

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