V10P10-M3 THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 ThinkiSemi matured trench barrier schottky /hexstar2 High current capability /hexstar2 Case: Heatsink SMD TO-277B/SMPC-SQ outline /hexstar2 High surge current capability /hexstar2 Weight: 0.098 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant Application /hexstar2 Inverter/Amplifier /hexstar2 Photovoltaic Solar Cell Protection/SMPS /hexstar2 Battery Reverse Protection Circuit/Charger LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOM SIDE HEAT SINK Internal Configuration Cathode Anode Anode Cathode(Bottom Side Metal Heatsink) ABSOLUTE M AXIMUM RATINGS T A unless otherwise noted P ARAMETER S YMBOL V10P10-M3 UNIT Marking code on the device V10P10-M3 Repetitive peak reverse voltage V RRM 100 V Reverse voltage, total rms value V R(RMS) V Forward current I F A Surge peak f orward current 8.3ms single half sine wave superimposed on rated load I FSM A Junction temperature T J 55 to +1 Storage temperature T STG 55 to +1 THERMAL PERFORMANCE P ARAMETER S YMBOL TYP UNIT Junction to lead thermal resistance R Ө J L ELECTRICAL SPECIFICATIONS T A = 25 unless otherwise noted PARAMETER CONDITIONS SYMBOL T YP M AX U NIT Forward voltage (1) I F T J V F 0.51 V I F 10A T J 0.60 0.68 V I F T J 125 0.42 V I F 10A T J 125 0.52 0.60 V Reverse current @ rated V R (2) T J I R 150 µA TJ = 125°C m A Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
Page 2/3Rev.12T CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig. Maximum Non Repetitive Forward Surge Current 25 50 75 100 125 150 100 1000 10000 0.1 1 10 100 f=1.0MHz Vsig=50mVp-p 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125 C TJ=100°C TJ=150°C 0.1 100 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=150°C TJ=100°C 100 120 140 160 1 10 100 8.3ms single half sine wave CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) INSTANTANEOUS REVERSE CURRENT ( m PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 Pulse width T J =25 C T J =125 C UF1DLW FORWARD VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE C URRENT (A) V10P10-M3
Page 3/3Rev.12T TO-277B/SMPC-SQ PACKAGE OUTLINE DIMENSIONS TO-277B/SMPC-SQ SUGGESTED PAD LAYOUT 0.172(4.35) 0.039(1.00) 0.136(3 45) 0.128(3 25) . 0.085(2 15) 0.076(1 95) 0.083(2 10). 0.014(0.35) 0.009(0.25) 0.052(1.30) 0.044(1.10) 0.243(6.15) 0.238(6.05) 0.282(7.15) 0.269(6.85) 0.193(4.90) 0.181(4.60) 0.053(1.35) 0.045(1.15) V10P10-M3