UPS760E3 MICROSEMI | Alldatasheet
Document overview
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Technical content
7 A Schottky Barrier Rectifier
Microsemi Copyright © 2007 10-15-2007 Rev B WWW.Microsemi .COMUUPPSS776600ee33
DESCRIPTION
This UPS760e3 in the Powermite3 ® package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, the Powermite3 ® package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique locking tab. This acts as an efficient heat path to the heat-sink mounting. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Rectified Output Current Io 7 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =90 ºC IFSM 100 A Storage Temperature TSTG -55 to +150 ºC Junction Temperature TJ -55 to +125 ºC THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction to Case (Bottom) RθJC 2.5 ºC/Watt Junction to Ambient (1) RθJA 65 ºC/Watt (1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print. KEY FEATURES Very low thermal resistance package RoHS Compliant with e3 suffix part number Guard-ring-die construction for transient protection Efficient heat path with Integral locking bottom metal tab Low forward voltage Full metallic bottom eliminates flux entrapment Compatible with automatic insertion Low profile-maximum height of 1mm APPLICATI ONS/BENEFITS Switching and Regulating Power Supplies Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Reduces reverse recovery loss with low I RM Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3 MECHANICAL & PACKAGING
- CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0
- FINISH: Annealed matte-Tin plating over copper and readily solderable per MIL- STD-750 method 2026 (consult factory for Tin-Lead plating)
- POLARITY: See figure (left)
- MARKING: S760•
- WEIGHT: 0.072 gram (approx.)
- Package dimension on last page
- Tape & Reel option: 16 mm tape per Standard EIA-481-B, 5000 on 13” reel Page 1
WWW.Microsemi .COM Note: 1 Short duration test pulse used to minimize self – heating effect. ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units Forward Voltage (Note 1) VFm IF = 3.5 A , Tj = 25 ºC IF = 3.5 A , Tj = 125 ºC IF = 7 A , Tj = 25 ºC IF = 7 A , Tj = 125 ºC 0.48 0.36 0.55 0.44 0.52 0.40 0.60 0.48 V Reverse Break Down Voltage (Note 1) V BR IR = 0.5 mA V Reverse Current (Note1) IR VR = 60 V, Tj = 25ºC VR = 60 V, Tj =125 ºC 100 μA mA Capacitance CT V R = 4.0V; f = 1 MHZ 375 pF UUPPSS776600ee33 Microsemi Copyright © 2007 10-15-2007 Rev B Page 2
WWW.Microsemi .COM Notes: 1. TA = TSOLDERING POINT, RΘJS = 2.5C/W, RΘSA = 0º C/W. 2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode 20-35° C/W. 3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RΘJA in range of 65°C/W. See mounting pad below. MOUNTING PAD UUPPSS776600ee33 Mounting Pad Dimensions: inches [mm] Microsemi Copyright © 2007 10-15-2007 Rev B Page 3
TAPE & REEL WWW.Microsemi .COM
16 MM TAPE
13 INCH REEL
Microsemi Copyright © 2007 10-15-2007 Rev B Page 4
WWW.Microsemi .COM UUPPSS776600ee33 Copyright © 2007 10-15-2007 Rev B