UPS3540 MICREL | Alldatasheet
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Technical content
WWW.Microsemi .COM UPS3540
5 A Schottky Barrier Rectifier
DESCRIPTION
In Microsemis new Powermite3® SMT package, these high efficiency ultrafast rectifiers offer the power handing capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, Powermite3® package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly, and a unique locking tab acts as an integral heat sink. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMIs website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V RMS Reverse Voltage V R (RMS) 28 V Average Rectified Output Current Io 5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =90 ºC IFSM 100 A Storage Temperature T stg -55 to +150 ºC Operating Temperature T op -55 to +125 ºC THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to Bottom Rja (1) 3.2 ºC/Watt (1) When Mounted on PC board with 2 ounce copper pattern. KEY FEA TURES ! High power surface mount package. ! Guard Ring die construction for transient protection. ! Silicon Schottky rectifiers no reverse voltage recovery. ! Internal heat sink locking tabs ! Low forward voltage. ! Full metallic bottom eliminates flux entrapment ! Compatible with automatic insertion equipment ! Low profile-maximum height of 1mm supplied in 16 mm tape reel- 5000 units/ 13 reel. APPLICATIONS/BENEFITS ! Switching and Regulating Power Supplies. ! Charge Pump Circuits. ! Reduces reverse recovery loss due to low IRM. ! Small foot print
190 X 300 mils
1:1 Actual size UUPPSS556600 Copyright 2003
WWW.Microsemi .COM ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units Forward Voltage (Note 1) VFm IF = 5 A , Tj = 25 ºC IF = 5 A , Tj = 125 ºC IF = 10 A , Tj = 25 ºC IF = 10 A , Tj = 125 ºC 0.47 0.45 0.62 0.59 0.54 V Reverse Break Down Voltage (Note 1) VBR IR = 0.5 mA V Reverse Current (Note1) Irm VR = 40 V, Tj = 25ºC VR = 40 V, Tj =125 ºC 0.030 2.5 0.5 mA Capacitance CT VR = 4 V; F = 1 MHZ 250 pF Note: 1 Short duration test pulse used to minimize self heating effect Microsemi Page 2Copyright 2003
WWW.Microsemi .COM Notes: 1. TA = TSOLDERING POINT, RΘJS=3.2°C/W, RΘsa = 0º C/W. 2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode 15-30° C/W. 3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RΘJA in range of 60 - 75° C/W. EELLEECCTTRRIICCAALLSS Microsemi Page 3Copyright 2003
WWW.Microsemi .COM 16 mm TAPE
13 INCH REEL
Page 4Copyright 2003
WWW.Microsemi .COM MMEECCHHAANNIICCAALL Microsemi Page 5Copyright 2003
WWW.Microsemi .COM NOTES: NNOOTTEESS Microsemi Page 6Copyright 2003