UPS1040E3 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: pwissel
- PDF pages: 4
Technical content
10 A LOW VF Schottky BARRIER RECTIFIER
WWW.Microsemi .COM S C O T T S D A L E D I V I S I O N UPS1040e3 UPS1040e3 Microsemi Scottsdale Division Page 1 Copyright © 2005 6-09-2005 REV D D E S C R I P T I O N This UPS1040e3 in the Powermite3® package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, the Powermite3® package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique locking tab act as an efficient heat path to the heat-sink mounting. Its innovative design makes this device ideal for use with automatic insertion equipment. K E Y F E A T U R E S Very low thermal resistance package RoHS Compliant with e3 suffix part number Guard-ring-die construction for transient protection Efficient heat path with Integral locking bottom metal tab Low forward voltage Full metallic bottom eliminates flux entrapment IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Compatible with automatic insertion ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V RMS Reverse Voltage V R (RMS) V Average Rectified Output Current Io A Non-Repetitive Peak Forward Surge Current 8.3 ms Single half sine wave Superimposed on Rated Load@ Tc =90ºC IFSM 150 A Storage Temperature TSTG -55 to +150 ºC Junction Temperature TJ -55 to +150 Low profile-maximum height of 1mm Options for screening in accordance with MIL-PRF-19500 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate MXUPS1040e3 for a JANTX (consult factory for Tin-Lead plating). Optional 100% avionics screening available by adding MA prefix for 100% temperature cycle, thermal impedance and 24 hours HTRB (consult factory for Tin-Lead plating) A P P L I C A T I O N S / B E N E F I T S Switching and Regulating Power Supplies. ºC Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery THERMAL CHARACTERISTICS Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Thermal Resistance Junction-to-case (bottom) RθJC 3.2 ºC/ Watt Junction to ambient (1) RθJA ºC/ Watt (1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print Reduces reverse recovery loss with low IRM Small foot print Powermite 3™
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3 M E C H A N I C A L & P A C K A G I N G
- CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 UPS340E3
- FINISH: Annealed matte-Tin plating over copper and readily solderable per MIL-STD-750 method 2026 (consult factory for Tin-Lead plating)
- POLARITY: See figure (left)
- MARKING: S1040•
- WEIGHT: 0.072 gram (approx.)
- Package dimension on last page
- Tape & Reel option: 16 mm tape per Standard EIA-481-B, 5000 on 13” reel 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
WWW.Microsemi .COM S C O T T S D A L E D I V I S I O N UPS1040e3 UPS1040e3 ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units IF = 8 A , Tj = 25 ºC Forward Voltage (Note 1) 0.45 Microsemi Scottsdale Division Page 2 Copyright © 2005 6-09-2005 REV D Note: 1 Short duration test pulse used to minimize self – heating effect. GRAPHS VF IF = 8 A , Tj = 125 ºC IF = 10 A , Tj = 25 ºC 0.47 0.49 0.41 V 0.51 VBR IR = 1 mA Reverse Break Down Voltage (Note 1) V Reverse Current (Note1) 0.1 12.5 0.3 VR = 35 V, Tj = 25ºC VR = 35 V, Tj = 100 ºC IR mA mA Capacitance CT VR = 4.0V; f = 1 MHZ 700 pF 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
WWW.Microsemi .COM S C O T T S D A L E D I V I S I O N UPS1040e3 UPS1040e3 GRAPHS PF(AV), AVERAGE FORWARD POWER DISSIPATION IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward power Dissipation NOTE 1: TA = TC at case bottom where RθJC =2.5º C/W and RθCA = 0º C/W (infinite heat sink). NOTE 2: Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RθJA in range of 15-30° C/W. NOTE 3: Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RθJA in range of 65°C/W. See mounting pad dimensions on next page. Microsemi Scottsdale Division Page 3 Copyright © 2005 6-09-2005 REV D 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
WWW.Microsemi .COM S C O T T S D A L E D I V I S I O N UPS1040e3 UPS1040e3 PACKAGE & MOUNTING PAD DIMENSIONS PACKAGING: INCHES MILLIMETERS NOMINAL NOMINAL DIM 0.070 1.778 A 0.173 4.392 B 0.200 5.080 C 0.035 0.889 D 0.160 4.064 E F 1.829 0.072 0.056 1.422 G 0.044 1.118 H 0.190 4.826 J 0.210 5.344 K 0.038 0.965 L M 0.864 0.034 0.030 0.762 N 0.030 0.762 P Microsemi Scottsdale Division Page 4 Copyright © 2005 6-09-2005 REV D 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503