UPG2158T5K NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPG2158T5K is a GaAs MMIC for L, S-band SPDT (S ingle Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSSON (T hin S hrink S mall O ut-line N on-leaded) package. And this package is able to high-density surface mounting.

FEATURES

  • Switch control voltage : V cont (H) = 1.8 to 5.3 V (2.7 V TYP.) : V cont (L) = −0.2 to +0.2 V (0 V TYP.)  High isolation : ISL1 = 27 dB TYP. @ f = 0.05 to 1.0 GHz, V cont (H) = 2.7 V, Vcont (L) = 0 V : ISL2 = 19 dB TYP. @ f = 1.0 to 2.0 GHz, V cont (H) = 2.7 V, Vcont (L) = 0 V : ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, V cont (H) = 2.7 V, Vcont (L) = 0 V : ISL4 = 17 dB TYP. @ f = 2.5 to 3.0 GHz, V cont (H) = 2.7 V, Vcont (L) = 0 V  High-density surface mounting : 6- pin plastic TSSON package (1.0 × 1.0 × 0.37 mm)

APPLICATIONS

 L, S-band digital cellular or cordless telephone  W-LAN, WLL and Bluetooth TM etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form µPG2158T5K-E2 µPG2158T5K-E2-A 6-pin plastic TSSON (Pb-Free) Note G2 • Embossed tape 8 mm wide

  • Pin 1, 6 face the perforation side of the tape
  • Qty 5 kpcs/reel Note With regards to terminal solder (the solder contai ns lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2158T5K DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. L, S-BAND SPDT SWITCH GaAs INTEGRATED CIRCUIT µPG2158T5K Document No. PG10578EJ02V0DS (2nd edition) Date Published December 2005 CP(K) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2005 The mark  shows major revised points.

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name

1 OUTPUT1

2 GND

3 OUTPUT2

4 V cont2

5 INPUT

(Top View) (Bottom View) 3 4 3 4 (Top View)

6 V cont1

Vcont1 V cont2 INPUT −OUTPUT1 INPUT −OUTPUT2 Low High OFF ON High Low ON OFF ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Switch Control Voltage V cont +6.0 Note V Input Power P in +31 dBm Operating Ambient Temperature T A −45 to +85 °C Storage Temperature T stg −55 to +150 °C Note Vcont1 − Vcont2 ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Switch Control Voltage (H) V cont (H) 1.8 2.7 5.3 V Switch Control Voltage (L) V cont (L) −0.2 0 +0.2 V Data Sheet PG10578EJ02V0DS 2 µPG2158T5K

ELECTRICAL CHARACTERISTICS 1 (TA = +25°C, Vcont (H) = 2.7 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 1 L INS1 f = 0.05 to 1.0 GHz Note 1 − 0.40 0.45 Insertion Loss 2 L INS2 f = 1.0 to 2.0 GHz − 0.45 0.50 Insertion Loss 3 L INS3 f = 2.0 to 2.5 GHz − 0.47 0.55 Insertion Loss 4 L INS4 f = 2.5 to 3.0 GHz − 0.53 0.60 dB Isolation 1 ISL1 f = 0.05 to 1.0 GHz Note 1 23 27 − Isolation 2 ISL2 f = 1.0 to 2.0 GHz 16 19 − Isolation 3 ISL3 f = 2.0 to 2.5 GHz 14 17 − Isolation 4 ISL4 f = 2.5 to 3.0 GHz 14 17 − dB Input Return Loss RL in f = 0.05 to 3.0 GHz Note 1 15 20 − dB Output Return Loss RL out f = 0.05 to 3.0 GHz Note 1 15 20 − dB Input Power Note 2 f = 0.5 to 3.0 GHz − +29.0 − dBm 1 dB Loss Compression Input Power Note 3 Pin (1 dB) f = 0.5 to 3.0 GHz − +30.5 − dBm 2nd Harmonics 2f 0 f = 2.0/2.5 GHz, P in = +20 dBm 65 75 − dBc 3rd Harmonics 3f 0 f = 2.0/2.5 GHz, P in = +20 dBm 65 75 − dBc Input 3rd Order Distortion Intercept Point IIP3 f = 0.5 to 3.0 GHz 2 tone 5 MHz spacing − +60 − dBm Switch Control Current I cont No signal − 0.2 20 µA Switch Control Speed t SW 50% CTL to 90/10% RF − 50 500 ns Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. P in (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. 3. P in (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be cho sen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. Data Sheet PG10578EJ02V0DS 3 µPG2158T5K

ELECTRICAL CHARACTERISTICS 2 (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 1 L INS1 f = 0.05 to 1.0 GHz Note 1 − 0.40 0.47 Insertion Loss 2 L INS2 f = 1.0 to 2.0 GHz − 0.46 0.52 Insertion Loss 3 L INS3 f = 2.0 to 2.5 GHz − 0.48 0.57 Insertion Loss 4 L INS4 f = 2.5 to 3.0 GHz − 0.54 0.62 dB Isolation 1 ISL1 f = 0.05 to 1.0 GHz Note 1 23 27 − Isolation 2 ISL2 f = 1.0 to 2.0 GHz 16 19 − Isolation 3 ISL3 f = 2.0 to 2.5 GHz 14 17 − Isolation 4 ISL4 f = 2.5 to 3.0 GHz 14 17 − dB Input Return Loss RL in f = 0.05 to 3.0 GHz Note 1 15 20 − dB Output Return Loss RL out f = 0.05 to 3.0 GHz Note 1 15 20 − dB Input Power Note 2 f = 0.5 to 3.0 GHz − +22.0 − dBm 1 dB Loss Compression Input Power Note 3 Pin (1 dB) f = 0.5 to 3.0 GHz − +25.0 − dBm Switch Control Current I cont No signal − 0.2 20 µA Switch Control Speed t SW 50% CTL to 90/10% RF − 50 500 ns Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. P in (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. 3. P in (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be cho sen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. Data Sheet PG10578EJ02V0DS 4 µPG2158T5K

Remark C 0 : 0.05 to 0.5 GHz 1 000 pF : 0.5 to 3.0 GHz 56 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PG10578EJ02V0DS 5 µPG2158T5K

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont2 OUTPUT2 INPUT OUTPUT1 Vcont1 USING THE NEC EVALUATION BOARD Symbol Values C1, C2, C3 56 pF C4, C5 1 000 pF Data Sheet PG10578EJ02V0DS 6 µPG2158T5K

TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 2.7 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, using test fixture, unless otherwise specified) 2.0 2.5 1.0 0.5 –1.0 –2.0 –2.5 1.5 –0.5 –1.5 3 4 5 1: –0.380 dB

1.0 GHz

2: –0.411 dB

1.5 GHz

3: –0.442 dB

2.0 GHz

4: –0.468 dB

2.5 GHz

5: –0.513 dB

3.0 GHz

1: –0.380 dB 2: –0.413 dB 3: –0.446 dB 4: –0.468 dB 5: –0.511 dB –20 –40 –50 –10 –30 1: –27.327 dB 2: –23.924 dB 3: –21.519 dB 4: –19.691 dB 5: –18.176 dB –20 –40 –50 –10 –30 1: –27.239 dB 2: –23.849 dB 3: –21.47 dB 4: –19.834 dB 5: –18.109 dB –20 –40 –50 –10 –30 3 4 5 1: –24.828 dB 2: –27.749 dB 3: –29.57 dB 4: –29.588 dB 5: –27.86 dB –20 –40 –50 –10 –30 1: –25.098 dB 2: –27.928 dB 3: –28.894 dB 4: –28.293 dB 5: –26.879 dB 2.0 2.5 1.0 0.5 –1.0 –2.0 –2.5 1.5 –0.5 –1.5 Insertion Loss LINS (dB) Frequency f (GHz) INPUT-OUTPUT1 INSERTION LOSS vs. FREQUENCY Insertion Loss LINS (dB) Frequency f (GHz) INPUT-OUTPUT2 INSERTION LOSS vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) INPUT-OUTPUT1 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) INPUT-OUTPUT2 ISOLATION vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) INPUT-OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) INPUT-OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY Remark The graphs indicate nominal characteristics. Data Sheet PG10578EJ02V0DS 7 µPG2158T5K

–20 –40 –50 –10 –30 2 3 4 5 1: –24.907 dB 2: –27.235 dB 3: –27.784 dB 4: –26.52 dB 5: –24.38 dB –20 –40 –50 –10 –30 1: –25.825 dB 2: –28.812 dB 3: –28.916 dB 4: –26.585 dB 5: –23.762 dB +35 +30 +25 +20 +15 +10 f = 2.0 GHz Output Return Loss RLout (dB) Frequency f (GHz) INPUT-OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) INPUT-OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Remark The graphs indicate nominal characteristics. Data Sheet PG10578EJ02V0DS 8 µPG2158T5K

6-PIN PLASTIC TSSON (UNIT: mm) 1.0±0.1 0.35±0.060.35±0.06 0.45 ±0.1 0.13±0.07 0.15+0.07 –0.05 0.23±0.07 0.175±0.075 (Bottom View) (Top View) 1.0±0.1 1.0±0.1 1.0±0.1 0.37+0.03 –0.05 0.15+0.07 –0.05 Data Sheet PG10578EJ02V0DS 9 µPG2158T5K

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperatur e (terminal temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating). Data Sheet PG10578EJ02V0DS 10 µPG2158T5K

Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. M8E 00. 4 - 0110 The information in this document is current as of December, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PG10578EJ02V0DS 11 µPG2158T5K

Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.  Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.  Do not burn, destroy, cut, crush, or chemically dissolve the product.  Do not lick the product or in any way allow it to enter the mouth. NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 For further information, please contact µPG2158T5K