UPG2131T5D RENESAS | Alldatasheet
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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. L-BAND PA DRIVER AMPLIFIER GaAs INTEGRATED CIRCUIT µPG2131T5D Document No. PG10272EJ02V0DS (2nd edition) Date Published October 2003 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2003 The mark shows major revised points.
DESCRIPTION
The µPG2131T5D is GaAs MMIC for PA driver amplifie r which were developed for dual band mobile phone and another L-band application. This device realizes high gain and high output power. This device is housed in a 14-pin LGA (CSP Type) package. And this package is able to high-density surface mounting.
FEATURES
- Operation freqecncy : f opt1 = 893 to 960 MHz (0.8 GHz Band side) : f opt2 = 1 429 to 1 453 MHz (1.5 GHz Band side) Supply voltage : V DD1, 3 = 2.7 to 2.9 V (2.8 V TYP.) : V DD2, 4 = 3.2 to 4.23 V (3.5 V TYP.) Low distortion : P adj1 = −63 dBc TYP. @ VDD1 = 2.8 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +11 dBm, f = 925 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth (0.8 GHz Band side) : P adj3 = −63 dBc TYP. @ VDD3 = 2.8 V, VDD4 = 3.5 V, VAGC = 2.5 V, Pout = +11 dBm, f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth (1.5 GHz Band side) High-density surface mounting : 14- pin LGA (CSP Type) package (2.5 × 2.5 × 0.6 mm) APPLICATION Digital cellular: PDC 0. 8/1.5 GHz Dual Band etc.
ORDERING INFORMATION
Part Number Package Marking Supplying Form µPG2131T5D-E1 14-pin LGA (CSP Type) G4B • Embossed tape 8 mm wide
- Pin 6, 7 face the perforation side of the tape
- Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2131T5D
Data Sheet PG10272EJ02V0DS 2 µPG2131T5D PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 INPUT1 (0.8 GHz Band side)
2 GND
3 V DD1 (0.8 GHz Band side) 4 V DD2 (0.8 GHz Band side) 5 OUTPUT1 (0.8 GHz Band side) 6 OUTPUT2 (0.8 GHz Band side) 7 V SW (0.8 GHz Band side) 8 OUTPUT3 (1.5 GHz Band side) 9 V DD4 (1.5 GHz Band side) 10 V DD3 (1.5 GHz Band side)
11 GND
12 INPUT2 (1.5 GHz Band side)
13 V AGC
14 GND
(Bottom View) 54321 1314 8 9 10 11 12 (Top View) 12345 1314 12 11 10 9 8 G4B (Top View) 12345 1314 12 11 10 9 8 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage 1, 2, 3, 4 V DD1, 2, 3, 4 5.0 V Gain Control Voltage V AGC 5.0 V Switch Control Voltage V SW 5.0 V Input Power 1 (1 pin) P in1 +10 dBm Input Power 2 (12 pin) P in2 +10 dBm Power Dissipation P D 140 Note mW Operating Ambient Temperature T A −30 to +85 °C Storage Temperature T stg −40 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
Data Sheet PG10272EJ02V0DS 3 µPG2131T5D RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Operating Frequency 1 f opt1 893 − 960 MHz Operating Frequency 2 f opt2 1 429 − 1 453 MHz Supply Voltage 1, 3 V DD1, 3 2.7 2.8 2.9 V Supply Voltage 2, 4 V DD2, 4 3.2 3.5 4.23 V Gain Control Voltage V AGC 0.5 − 2.5 V Switch Control Voltage (High) V SW (High) VDD1, 3−0.2 VDD1, 3 V DD1, 3 V Switch Control Voltage (Low) V SW (Low) 0 0 0.2 V Input Power 1 (1 pin) P in1 −10 − 0 dBm Input Power 2 (12 pin) P in2 −10 − 0 dBm
ELECTRICAL CHARACTERISTICS
(TA = +25 °C, VDD1, 3 = 2.8 V, V DD2, 4 = 3.5 V, π/4DQPSK modulated signal input, with external input and output matchig, unless otherwise specified)
0.8 GHz Band side
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Operating Frequency 1 f opt1 893 − 960 MHz Circuit Current 1 I DD1 P out = +11 dBm, VAGC = 2.5 V − 30 37 mA Output Power 1 P out1 P in = −10 to 0 dBm, VAGC = 2.5 V +12 +14 − dBm Output Power 2 P out2 P in = −10 to 0 dBm, VAGC = 0.5 V − − −15 dBm Adjacent Channel Power Leakage 1 P adj1 Pout = +11 dBm, VAGC = 2.5 V, Pin = −10 to 0 dBm, ∆f = ±50 kHz, 21 kHz Bandwidth − −63 −58 dBc Adjacent Channel Power Leakage 2 P adj2 Pout = +11 dBm, VAGC = 2.5 V, Pin = −10 to 0 dBm, ∆f = ±100 kHz, 21 kHz Bandwidth − −72 −69 dBc Noise Figure 1 NF 1 V AGC = 2.5 V − 6 − dB
1.5 GHz Band side
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Operating Frequency 2 f opt2 1 429 − 1 453 MHz Circuit Current 2 I DD2 P out = +11 dBm, VAGC = 2.5 V − 30 37 mA Output Power 3 P out3 P in = −10 to 0 dBm, VAGC = 2.5 V +12 +14 − dBm Output Power 4 P out4 P in = −10 to 0 dBm, VAGC = 0.5 V − − −15 dBm Adjacent Channel Power Leakage 3 P adj3 Pout = +11 dBm, VAGC = 2.5 V, Pin = −10 to 0 dBm, ∆f = ±50 kHz, 21 kHz Bandwidth − −63 −58 dBc Adjacent Channel Power Leakage 4 P adj4 Pout = +11 dBm, VAGC = 2.5 V, Pin = −10 to 0 dBm, ∆f = ±100 kHz, 21 kHz Bandwidth − −72 −69 dBc Noise Figure 2 NF 2 V AGC = 2.5 V − 6 − dB
Data Sheet PG10272EJ02V0DS 4 µPG2131T5D 0.8 GHz/1.5 GHz Band side Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gain Control Current I AGC V DD1, 3 = 2.8/0 V, VDD2, 4 = 3.5/0 V, VAGC = 0.5/2.5 V −100 − 300 µA Switch Control Current I SW V SW = 2.8/0 V −10 − 100 µA
Data Sheet PG10272EJ02V0DS 5 µPG2131T5D EVALUATION CIRCUIT (fopt1 = 893 to 960 MHz, fopt2 = 1 429 to 1 453 MHz, VDD1, 3 = 2.8 V, VDD2, 4 = 3.5 V) VSW OUTPUT2 OUTPUT3 OUTPUT1 10 nF 12 nH 1 nF 1 nF10 nF 6.8 nH VAGC VDD3 VDD4 VDD1 VDD2 10 nH INPUT1 INPUT2 12345 1314 12 11 10 9 8 GND The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PG10272EJ02V0DS 6 µPG2131T5D ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD V2049kai / 2.5×2.5 14pin PKG Ver.06 / polyimide IN1/1.5G Vagc IN/800M Vd1/800M Vd2/800M OUT1/800M OUT2/800M Vsw2 OUT/1.5G Vd2/1.5GVd1/1.5G L1 L2 G4B USING THE NEC EVALUATION BOARD Symbol Values L1 10 nH L2 12 nH L3 6.8 nH C1, C4 10 nF C2, C3 1 nF
Data Sheet PG10272EJ02V0DS 7 µPG2131T5D TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) 0.8 GHz Band side (INPUT1−OUTPUT1, f = 960 MHz, VDD1 = 2.8 V, VDD2 = 3.5 V, VSW = 0 V) –10 –20 –80 –75 –70 –65 –55 –60 –50 –45 –40 –30 –35 –25 Circuit Current 1 IDD1 (mA), Output Power Pout (dBm) Input Power Pin (dBm) ADJACENT CHANNEL POWER LEAKAGE 1, 2 vs. INPUT POWER CIRCUIT CURRENT 1, OUTPUT POWER, Adjacent Channel Power Leakage 1 Padj1 @ f = ±50 kHz (dBc) Adjacent Channel Power Leakage 2 Padj2 @ f = ±100 kHz (dBc) VAGC = 2.5 V IDD1 Padj2 Padj1 Pout Pin = –5 dBm IDD1 Pout Padj1 Padj2 –30 –25 –20 –15 –10 –10 –25 –30 –35 –40 –45 –50 –55 –60 –65 –70 –75 –15 –20 –80 Circuit Current 1 IDD1 (mA), Output Power Pout (dBm) Gain Control Voltage VAGC (V) ADJACENT CHANNEL POWER LEAKAGE 1, 2 vs. GAIN CONTROL VOLTAGE CIRCUIT CURRENT 1, OUTPUT POWER, Adjacent Channel Power Leakage 1 Padj1 @ f = ±50 kHz (dBc) Adjacent Channel Power Leakage 2 Padj2 @ f = ±100 kHz (dBc) 0.8 GHz Band side (INPUT1−OUTPUT2, f = 960 MHz, VDD1 = 2.8 V, VDD2 = 3.5 V, VSW = 2.8 V) Circuit Current 1 IDD1 (mA), Output Power Pout (dBm) Gain Control Voltage VAGC (V) ADJACENT CHANNEL POWER LEAKAGE 1, 2 vs. GAIN CONTROL VOLTAGE CIRCUIT CURRENT 1, OUTPUT POWER, Adjacent Channel Power Leakage 1 Padj1 @ f = ±50 kHz (dBc) Adjacent Channel Power Leakage 2 Padj2 @ f = ±100 kHz (dBc) –30 –25 –20 –15 –10 –10 –25 –30 –35 –40 –45 –50 –55 –60 –65 –70 –75 –15 –20 –80 P in = –5 dBm IDD1 Pout Padj1 Padj2 Circuit Current 1 IDD1 (mA), Output Power Pout (dBm) Input Power Pin (dBm) ADJACENT CHANNEL POWER LEAKAGE 1, 2 vs. INPUT POWER CIRCUIT CURRENT 1, OUTPUT POWER, Adjacent Channel Power Leakage 1 Padj1 @ f = ±50 kHz (dBc) Adjacent Channel Power Leakage 2 Padj2 @ f = ±100 kHz (dBc) –10 –20 –80 –75 –70 –65 –55 –60 –50 –45 –40 –30 –35 –25 VAGC = 2.5 V Padj2 Padj1 Pout IDD1 Remark The graphs indicate nominal characteristics.
Data Sheet PG10272EJ02V0DS 8 µPG2131T5D 1.5 GHz Band side (INPUT2−OUTPUT3, f = 1 453 MHz, VDD3 = 2.8 V, VDD4 = 3.5 V) Circuit Current 2 IDD2 (mA), Output Power Pout (dBm) Gain Control Voltage VAGC (V) ADJACENT CHANNEL POWER LEAKAGE 3, 4 vs. GAIN CONTROL VOLTAGE CIRCUIT CURRENT 2, OUTPUT POWER, Adjacent Channel Power Leakage 3 Padj3 @ f = ±50 kHz (dBc) Adjacent Channel Power Leakage 4 Padj4 @ f = ±100 kHz (dBc) –30 –20 –25 –15 –10 –10 –70 –65 –60 –55 –50 –45 –40 –35 –30 –25 –20 –15 –75 –80 Pin = –5 dBm IDD2 Pout Padj3 Padj4 Circuit Current 2 IDD2 (mA), Output Power Pout (dBm) Input Power Pin (dBm) ADJACENT CHANNEL POWER LEAKAGE 3, 4 vs. INPUT POWER CIRCUIT CURRENT 2, OUTPUT POWER, Adjacent Channel Power Leakage 3 Padj3 @ f = ±50 kHz (dBc) Adjacent Channel Power Leakage 4 Padj4 @ f = ±100 kHz (dBc) –10 –20 –80 –70 –75 –65 –55 –60 –50 –45 –40 –30 –35 –25 VAGC = 2.5 V IDD2 Padj3 Padj4 Pout Remark The graphs indicate nominal characteristics.
Data Sheet PG10272EJ02V0DS 9 µPG2131T5D PACKAGE DIMENSIONS 14-PIN LGA (CSP TYPE) (UNIT: mm) 2.5±0.1 2.5±0.1 0.85±0.07 0.6 MAX. 0+0.03 (Bottom View) 0.5±0.05 (1.15) (0.3) (0.3)(0.95) 0.3±0.05 (0.95) 0.3±0.05 0.675± 0.07 0.85±0.07 0.675±0.07 0.5±0.07 (1.15) 0.5±0.05 0+0.1 Remark ( ) : Reference value : Through hole : Solder resist
Data Sheet PG10272EJ02V0DS 10 µPG2131T5D RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating).
Data Sheet PG10272EJ02V0DS 11 µPG2131T5D M8E 00. 4 - 0110 The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product be fore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0307 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPG2131T5D Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. Do not burn, destroy, cut, crush, or chemically dissolve the product. Do not lick the product or in any way allow it to enter the mouth.