UPG2106TB NEC | Alldatasheet

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µµµµPG2106TB, µµµµPG2110TB L-BAND PA DRIVER AMPLIFIER Document No. P14318EJ1V0DS00 (1st edition) Date Published October 1999 N CP(K) Printed in Japan PRELIMINARY DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1999

DESCRIPTION

The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the µPG2110TB is for 1.5 GHz band application.

FEATURES

  • Low operation voltage : V DD1 = VDD2 = 3.0 V
  • f RF : 889 to 960 MHz, 1429 to 1453 MHz@Pout = +8 dBm
  • Low distortion : P adj1 = −60 dBc TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V External input and output matching
  • Low operation current : I DD = 25 mA TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V External input and output matching
  • Variable gain control function :ΔG = 40 dB TYP. @VAGC = 0.5 to 2.5 V External input and output matching
  • 6-pin super minimold package APPLICATION
  • Digital Cellular : PDC, IS-136 etc. ORDERING INFORMATION (PLAN) Part Number Package Supplying Form µPG2106TB-E3 µPG2110TB-E3 6-pin super minimold Carrier tape width is 8 mm. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG2106TB, µPG2110TB) ABSOLUTE MAXIMUM RATINGS (T A = +25 °°°°C) Parameter Symbol Ratings Unit Supply Voltage V DD1 , VDD2 6.0 V AGC Control Voltage V AGC 6.0 V Input Power P in −8d B m Total Power Dissipation P tot 140 Note mW Operating Ambient Temperature T A −30 to +90 °C Storage Temperature T stg −35 to +150 °C Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs HJ-FET.

Preliminary Data Sheet P14318EJ1V0DS002 µµµµPG2106TB , µµµµPG2110TB [µPG2106TB] PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Connection Pin No. Connection 1V DD1 4V AGC

2 GND 5 GND

3V DD2 & OUT 6 IN Top View Bottom View Top View RECOMMENDED OPERATING CONDITIONS (T A = +25 °°°°C) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V DD1 , VDD2 +2.7 +3.0 +3.3 V Input Power P in −− 18 −10 dBm AGC Control Voltage V AGC 0 − 2.5 V

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA = +25 °°°°C, VDD1 = VDD2 = +3.0 V, ππππ /4DQPSK modulated signal input, External input and output matching) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Operating Frequency f 889 − 960 MHz Power Gain G p Pin = −18 dBm, VAGC = 2.5 V 26 30 − dB Total Current I DD Pout = +8 dBm, VAGC = 2.5 V − 25 35 mA Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm, VAGC = 2.5 V Δf = ±50 kHz, 21 kHz Band Width −− 60 −55 Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm, VAGC = 2.5 V Δf = ±100 kHz, 21 kHz Band Width −− 70 −65 dBc Variable Gain Range ΔGP in = −18 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB AGC Control Current I AGC VAGC = 0.5 to 2.5 V − 200 500 µA G1V 123 654

Preliminary Data Sheet P14318EJ1V0DS00 3 µµµµPG2106TB , µµµµPG2110TB [µPG2110TB] PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Connection Pin No. Connection 1V DD1 4V AGC 3V DD2 & OUT 6 IN Top View Bottom View Top View RECOMMENDED OPERATING CONDITIONS (T A = +25 °°°°C) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V DD1 , VDD2 +2.7 +3.0 +3.3 V Input Power P in −− 18 −10 dBm AGC Control Voltage V AGC 0 − 2.5 V (Unless otherwise specified, TA = +25 °°°°C, VDD1 = VDD2 = +3.0 V, ππππ /4DQPSK modulated signal input, External input and output matching) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Operating Frequency f 1429 − 1453 MHz Power Gain G p Pin = −18 dBm, VAGC = 2.5 V 24 27 − dB Total Current I DD Pout = +8 dBm, VAGC = 2.5 V − 25 35 mA Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm, VAGC = 2.5 V Δf = ±50 kHz, 21 kHz Band Width −− 60 −55 Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm, VAGC = 2.5 V Δf = ±100 kHz, 21 kHz Band Width −− 70 −65 dBc Variable Gain Range ΔGP in = −18 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB AGC Control Current I AGC VAGC = 0.5 to 2.5 V − 200 500 µA G1Y 123 654

Preliminary Data Sheet P14318EJ1V0DS004 µµµµPG2106TB , µµµµPG2110TB [µPG2106TB] EVALUATION CIRCUIT (Preliminary) VDD1 = VDD2 = +3.0 V, f = 925 MHz G1V 123 654 C4L3 R1L4 C5 OUT IN VDD1 VDD2 VAGC Using the NEC Evaluation Board (Preliminary) Symbol Value C1, C3 1 000 pF C2 100 pF C4 27 pF C5 2 pF L1 10 nH L2 39 nH L3 27 nH L4 33 nH R1 1 k Ω

Preliminary Data Sheet P14318EJ1V0DS00 5 µµµµPG2106TB , µµµµPG2110TB [µPG2106TB] EVALUATION BOARD Epoxy glass: εεεε = 4.6, t = 0.4 mm, Board Dimension: 38 ×××× 40 mm IN OUT VDD1 VDD2 VAGC C4C5 LO IN RF IN RF OUT Vdd1 Vdd2

Preliminary Data Sheet P14318EJ1V0DS006 µµµµPG2106TB , µµµµPG2110TB [µPG2110TB] EVALUATION CIRCUIT (Preliminary) VDD1 = VDD2 = +3.0 V, f = 1441 MHz G1Y 123 654 C1 C6 C4L2 R1L3 C5 OUT IN VDD1 VDD2 VAGC Using the NEC Evaluation Board (Preliminary) Symbol Value C1, C3, C5 1 000 pF C2 1.5 pF C4 3 pF C6 2 pF L1 2.7 nH L2, L3 8.2 nH R1 1 k Ω

Preliminary Data Sheet P14318EJ1V0DS00 7 µµµµPG2106TB , µµµµPG2110TB [µPG2110TB] EVALUATION BOARD Polyimide: εεεε = 4.6, t = 0.4 mm, Board Dimension: 38 ×××× 40 mm VDD1 VDD2 VAGC OUT 21-091667_1 OUT NEC VagcAGC AMP IN IN Vdd1 Vdd2

Preliminary Data Sheet P14318EJ1V0DS008 µµµµPG2106TB , µµµµPG2110TB TYPICAL CHARACTERISTICS [µPG2106TB] −70 −60 −50 −40 −30 −20 −10 OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER Adjacent Channel Power Leakage1 Padj1@ Δ f = ±50 kHz (dBc) Output Power Pout (dBm), Total Current IDD (mA) Padj1 Pout IDD Input Power Pin (dBm) f = 925 MHz, VDD1 = VDD2 = 3.0 V VAGC = 2.5 V π/4DQPSK signal input −30 0 0.5 1 1.5 2 2.5 3 −20 −10 GAIN vs. AGC CONTROL VOLTAGE AGC Control Voltage VAGC (V) Gain (dB) f = 925 MHz, VDD1 = VDD2 = 3.0 V Vector Network Analyzer use

Preliminary Data Sheet P14318EJ1V0DS00 9 µµµµPG2106TB , µµµµPG2110TB [µPG2110TB] OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER Adjacent Channel Power Leakage1 Padj1@ Δ f = ±50 kHz (dBc) Input Power Pin (dBm) Output Power Pout (dBm), Total Current IDD (mA) −70 −60 −50 −40 −30 −10 −20 Padj1 Pout IDD f = 1441 MHz, VDD1 = VDD2 = 3.0 V, VAGC = 2.5 V π/4DQPSK signal input −30 0 0.5 1 1.5 2 2.5 3 −20 −10 GAIN vs. AGC CONTROL VOLTAGE AGC Control Voltage VAGC (V) Gain (dB) f = 1441 MHz, VDD1 = VDD2 = 3.0 V Vector Network Analyzer use

Preliminary Data Sheet P14318EJ1V0DS0010 µµµµPG2106TB , µµµµPG2110TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 2.0±0.2 1.3 0.65 0.65 1.25±0.1 2.1±0.1 0.2+0.1 +0.1 0.1 MIN. 0.7 0.9±0.1 0 to 0.1 0.15

Preliminary Data Sheet P14318EJ1V0DS00 11 µµµµPG2106TB , µµµµPG2110TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200 °C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

µµµµPG2106TB , µµµµPG2110TB CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.

  • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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  • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
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  • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8