UPG2110TB-E3

UPG2106TB RENESAS | Alldatasheet

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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. L-BAND PA DRIVER AMPLIFIER GaAs INTEGRATED CIRCUITS µµµµPG2106TB, µµµµPG2110TB The mark  shows major revised points.The mark  shows major revised points.Document No. PG10168EJ01V0DS (1st edition) (Previous No. P14318EJ1V0DS00) Date Published July 2002 CP(K) Printed in Japan  NEC Corporation 1999  NEC Compound Semiconductor Devices 2002

DESCRIPTION

The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion. These devices are housed in a 6-pin super minimold package. And this package is able to high-density surface mounting.

FEATURES

• Operation frequency : µPG2106TB : f opt = 889 to 960 MHz : µPG2110TB : f opt = 1 429 to 1 453 MHz
• Supply voltage : µPG2106TB, µPG2110TB : VDD1, 2 = 2.7 to 3.3 V (3.0 V TYP.)
• Circuit current : µPG2106TB, µPG2110TB : IDD = 25 mA TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm
• High power gain : µPG2106TB : G P = 30 dB TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pin = −18 dBm : µPG2110TB : G P = 27 dB TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pin = −18 dBm
• Gain control range : µPG2106TB, µPG2110TB : GCR = 40 dB TYP. @ VDD1, 2 = 3.0 V, VAGC = 0.5 to 2.5 V, Pin = −18 dBm
• Low distortion : µPG2106TB : P adj1 = −60 dBc TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm, f = 925 MHz, Δf = ±50 kHz, 21 kHz Bandwidth : µPG2110TB : P adj1 = −60 dBc TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm, f = 1 441 MHz, Δf = ±50 kHz, 21 kHz Bandwidth
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION
• Digital Cellular: PDC 800 MHz, PDC 1.5 GHz etc.

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPG2106TB-E3 6-pin super minimold G1V µPG2110TB-E3 G1Y

• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2106TB, µPG2110TB

Data Sheet PG10168EJ01V0DS2 µµµµPG2106TB, µµµµPG2110TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1V DD1 2G N D 3O U T P U T / V DD2 4V AGC 5G N D

6 INPUT

Caution Marking is an example of µµµµPG2106TB. ABSOLUTE MAXIMUM RATINGS (T A = +25°°°°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage1, 2 V DD1, 2 6.0 V Gain Control Voltage V AGC 6.0 V Input Power P in −8d B m Power Dissipation P D 140 Note mW Operating Ambient Temperature T A −40 to +90 °C Storage Temperature T stg −45 to +150 °C Note Mounted on double copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (T A = +25°°°°C) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage1, 2 V DD1, 2 2.7 3.0 3.3 V Gain Control Voltage V AGC 0 − 2.5 V Input Power P in −− 18 −10 dBm (Top View) G1V 1 (Top View) (Bottom View)

Data Sheet PG10168EJ01V0DS 3 µµµµPG2106TB, µµµµPG2110TB

ELECTRICAL CHARACTERISTICS

(TA = +25°°°°C, VDD1, 2 = 3.0 V, ππππ/4DQPSK modulated signal input, with external input and output matching, unless otherwise specified) µµµµPG2106TB Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Operating Frequency f opt 889 − 960 MHz Circuit Current I DD Pout = +8 dBm, VAGC = 2.5 V − 25 35 mA Power Gain G P Pin = −18 dBm, VAGC = 2.5 V 26 30 − dB Adjacent Channel Power Leakage 1 P adj1 Pout = +8 dBm, VAGC = 2.5 V, Δf = ±50 kHz, 21 kHz Bandwidth −− 60 −55 dBc Adjacent Channel Power Leakage 2 P adj2 Pout = +8 dBm, VAGC = 2.5 V, Δf = ±100 kHz, 21 kHz Bandwidth −− 70 −65 dBc Gain Control Range GCR P in = −18 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB Gain Control Current I AGC VAGC = 0.5 to 2.5 V − 200 500 µA µµµµPG2110TB Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Operating Frequency f opt 1 429 − 1 453 MHz Circuit Current I DD Pout = +8 dBm, VAGC = 2.5 V − 25 35 mA Power Gain G P Pin = −18 dBm, VAGC = 2.5 V 24 27 − dB Adjacent Channel Power Leakage 1 P adj1 Pout = +8 dBm, VAGC = 2.5 V, Δf = ±50 kHz, 21 kHz Bandwidth −− 60 −55 dBc Adjacent Channel Power Leakage 2 P adj2 Pout = +8 dBm, VAGC = 2.5 V, Δf = ±100 kHz, 21 kHz Bandwidth −− 70 −65 dBc Gain Control Range GCR P in = −18 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB Gain Control Current I AGC VAGC = 0.5 to 2.5 V − 200 500 µA

Data Sheet PG10168EJ01V0DS4 µµµµPG2106TB, µµµµPG2110TB EVALUATION CIRCUIT µµµµPG2106TB f = 925 MHz, VDD1, 2 = 3.0 V OUTPUT 100 pF 2 pF VDD1 VDD2 INPUT VAGC 1 000 pF 27 pF 1 000 pF 39 nH 1 kW 10 nH 33 nH 27 nH

Data Sheet PG10168EJ01V0DS 5 µµµµPG2106TB, µµµµPG2110TB µµµµPG2110TB f = 1 441 MHz, VDD1, 2 = 3.0 V OUTPUT 1.5 pF 1 000 pF VDD1 VDD2 INPUT VAGC 1 000 pF 3 pF 1 000 pF 2.7 nH 1 kW 8.2 nH 8.2 nH 2 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Data Sheet PG10168EJ01V0DS6 µµµµPG2106TB, µµµµPG2110TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD µµµµPG2106TB IN OUT VDD1 VDD2 VAGC LO IN RF IN RF OUT Vdd1 Vdd2 C1 C2 USING THE NEC EVALUATION BOARD Symbol Values Part Number Maker C1, C3 1 000 pF GRM39CH102J25PB muRata C2 100 pF GRM39CH101J50PB muRata C4 27 pF GRM39CH270J50PB muRata C5 2 pF GRM39CH020C50PB muRata L1 10 nH TFL0816-10N Susumu L2 39 nH TFL0816-39N Susumu L3 27 nH TFL0816-27N Susumu L4 33 nH TFL0816-33N Susumu R1 1 k Ω RR0816P-102-D Susumu

Data Sheet PG10168EJ01V0DS 7 µµµµPG2106TB, µµµµPG2110TB µµµµPG2110TB VDD1 VDD2 VAGC OUT OUT NEC VagcAGC AMP IN IN Vdd1 Vdd2 C3 L1 C2 USING THE NEC EVALUATION BOARD Symbol Values Part Number Maker C1, C3, C5 1 000 pF GRM39CH102J25PB muRata C2 1.5 pF GRM39CH1R5C50PB muRata C4 3 pF GRM39CH030C50PB muRata C6 2 pF GRM39CH020C50PB muRata L1 2.7 nH TFL0816-2N7 Susumu L2, L3 8.2 nH TFL0816-8N2 Susumu R1 1 k Ω RR0816P-102-D Susumu

Data Sheet PG10168EJ01V0DS8 µµµµPG2106TB, µµµµPG2110TB TYPICAL CHARACTERISTICS (T A = +25°°°°C, unless otherwise specified) µµµµPG2106TB Input Power Pin (dBm) Output Power Pout (dBm), Circuit Current IDD (mA) OUTPUT POWER, CIRCUIT CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER POWER GAIN vs. GAIN CONTROL VOLTAGE Gain Control Voltage VAGC (V) Power Gain GP (dB) –35 f = 925 MHz, VDD1 = VDD2 = 3.0 V, VAGC = 2.5 V 45 40 –10 –20 –30–70 –60 –50 –40 –30 –20 –10 Adjacent Channel Power Leakage1 Padj1@ f = ±50 kHz (dBc) D f = 925 MHz, VDD1 = VDD2 = 3.0 V Pout IDD Padj1 µµµµPG2110TB 30 40 –10 –20 –30–70 –60 –50 –40 –30 –20 –10 f = 1 441 MHz, VDD1 = VDD2 = 3.0 V Pout IDD Padj1 f = 1 441 MHz, V DD1 = VDD2 = 3.0 V, VAGC = 2.5 V Input Power Pin (dBm) Output Power Pout (dBm), Circuit Current IDD (mA) OUTPUT POWER, CIRCUIT CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER Adjacent Channel Power Leakage1 Padj1@ f = ±50 kHz (dBc) Δ POWER GAIN vs. GAIN CONTROL VOLTAGE Gain Control Voltage VAGC (V) Power Gain GP (dB) Remark The graphs indicate nominal characteristics.

Data Sheet PG10168EJ01V0DS 9 µµµµPG2106TB, µµµµPG2110TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 2.0±0.2 1.3 0.650.65 1.25±0.1 2.1±0.1 0.1 MIN.

Data Sheet PG10168EJ01V0DS10 µµµµPG2106TB, µµµµPG2110TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PG10168EJ01V0DS 11 µµµµPG2106TB, µµµµPG2110TB M8E 00. 4 - 0110 The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).

NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0110 NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com Business issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918 Technical issue µµµµPG2106TB, µµµµPG2110TB SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested.

• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage.