UPG2012TK_1 NEC | Alldatasheet
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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. L-BAND SPDT SWITCH GaAs INTEGRATED CIRCUIT µPG2012TK Document No. PG10219EJ02V0DS (2nd edition) Date Published June 2004 CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2002, 2004
DESCRIPTION
The µPG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin lead-less minimold pa ckage (1511). And this package is able to high-density surface mounting.
FEATURES
- Supply voltage : V DD = 2.7 to 3.0 V (2.8 V TYP.) Switch control voltage : V cont (H) = 2.7 to 3.0 V (2.8 V TYP.) : V cont (L) = −0.2 to +0.2 V (0 V TYP.) value) : ISL2 = 30 dB TYP. @ f = 2.5 GHz, V DD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) High-density surface mounting : 6-pi n lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATIONS
L-band digital cellular or cordless telephone PCS, W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number Package Marking Supplying Form µPG2012TK-E2 6-pin l ead-less minimold (1511) G3H • Embossed tape 8 mm wide
- Pin 1, 6 face the perforation side of the tape
- Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2012TK The mark shows major revised points.
Data Sheet PG10219EJ02V0DS 2 µPG2012TK PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name
1 OUTPUT1
2 GND
3 OUTPUT2
4 V cont
5 INPUT
(Top View) (Bottom View) (Top View) G3H
6 V DD
Vcont INPUT −OUTPUT1 INPUT −OUTPUT2 Low OFF ON High ON OFF ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage V DD +6.0 V Switch Control Voltage V cont +6.0 V Input Power P in +26 dBm Power Dissipation P D 150 Note mW Operating Ambient Temperature T A −45 to +85 °C Storage Temperature T stg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V DD 2.7 2.8 3.0 V Switch Control Voltage (H) V cont(H) 2.7 2.8 3.0 V Switch Control Voltage (L) V cont(L) −0.2 0 0.2 V
Data Sheet PG10219EJ02V0DS 3 µPG2012TK
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss1 L INS1 f = 0.5 to 1.0 GHz − 0.27 0.50 dB Insertion Loss2 L INS2 f = 2.0 GHz − 0.30 0.50 dB Isolation1 ISL1 f = 0.5 to 2.0 GHz 24 30 − dB Input Return Loss RL in f = 0.5 to 2.5 GHz 15 20 − dB Output Return Loss RL out f = 0.5 to 2.5 GHz 15 20 − dB 0.1 dB Gain Compression Input Power Note Pin(0.1 dB) f = 2.0 GHz +17.5 +20.5 − dBm Supply Current I DD − 50 100 µA Switching Control Current I cont − 4 20 µA Note P in(0.1dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, VDD = 2.8 V,Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss3 L INS3 f = 2.5 GHz − 0.30 − dB Isolation2 ISL2 f = 2.5 GHz − 30 − dB 1 dB Gain Compression Input Power Note Pin(1 dB) f = 2.0 GHz − +24.0 − dBm Switching Control Speed t SW − 300 − ns Note P in(1dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF.
Data Sheet PG10219EJ02V0DS 4 µPG2012TK EVALUATION CIRCUIT (VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF) VDD Vcont OUTPUT1 OUTPUT2 INPUT 56 pF 56 pF56 pF 1 000 pF1 000 pF 456 321 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PG10219EJ02V0DS 5 µPG2012TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 6pin L2MM SPDT SW Vc1 Vc2 IN OUT 1 OUT 2 Vcont OUTPUT2 INPUT OUTPUT1 VDD G3H USING THE NEC EVALUATION BOARD Symbol Values C1, C2, C3 56 pF C4, C5 1 000 pF
Data Sheet PG10219EJ02V0DS 6 µPG2012TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm) 0.48±0.050.48±0.05 1.5±0.1 1.3±0.05 1.1±0.1 0.55±0.03 0.11+0.1 –0.05 0.16±0.05 0.9±0.10.2±0.1 (Bottom View)(Top View)
Data Sheet PG10219EJ02V0DS 7 µPG2012TK RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating).
Data Sheet PG10219EJ02V0DS 8 µPG2012TK Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. M8E 00. 4 - 0110 The information in this document is current as of June, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product be fore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPG2012TK SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. Do not destroy or burn the product. Do not cut or cleave off any part of the product. Do not crush or chem ically dissolve the product. Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage.