UPG186TQ RENESAS | Alldatasheet
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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. GaAs MMIC DBS SPDT IF SWITCH GaAs INTEGRATED CIRCUIT µµµµPG186TQ Document No. PG10137EJ02V0DS (2nd edition) Date Published June 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2001, 2002 The mark shows major revised points.
DESCRIPTION
The µPG186TQ is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block (LNB) down-converter for systems where at least multi LNB are required.
FEATURES
- High isolation : ISL = 45 dB TYP. (D/U-ratio)
- Control voltage : V cont = 0 V/+5 V
- Insertion loss : L INS = 1.5 dB TYP. (ZO = 50 Ω )
- 10-pin plastic TSON package (2.4 × 2.55 × 0.6 mm)
ORDERING INFORMATION
Part Number Package Marking Supplying Form µPG186TQ-E1 10-pin plastic TSON 186 • Embossed tape 12 mm wide
- Pin 5, 6 face the perforation side of the tape
- Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG186TQ
Data Sheet PG10137EJ02V0DS2 µµµµPG186TQ PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1I N - A 2G N D 3G N D 4G N D 5I N - B 6V cont2 7G N D 8O U T 9G N D
10 V cont1
ABSOLUTE MAXIMUM RATINGS (T A = +25°°°°C, unless otherwise specified) Parameter Symbol Ratings Unit Control Voltage V cont −1.0 to +6.0 V Total Power Dissipation P tot 2 Note W Input Power P in +10 dBm Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −65 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (T A = +25°°°°C) Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (High) V cont(H) +4.5 +5.0 +5.5 V Control Voltage (Low) V cont(L) −0.5 0 +0.5 V 12345 1 0 9876 54321 678 Top View Bottom View 91 0 GND186 12345 1 0 9876 Top View
Data Sheet PG10137EJ02V0DS 3 µµµµPG186TQ
ELECTRICAL CHARACTERISTICS
(TA = +25°°°°C, Vcont = 0 V/+5 V, Pin = 0 dBm, ZO = 50 ΩΩΩΩ , Each Port, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss L INS f = 0.95 to 2.15 GHz − 1.5 2.5 dB Insertion Loss Flatness 1 ΔLINS1 f = 0.95 to 1.5 GHz − 0.4 1.0 dB Insertion Loss Flatness 2 ΔLINS2 f = 1.5 to 2.15 GHz − 0.5 1.2 dB Isolation D/U-ratio 1 Note1 ISL1 f = 0.95 to 1.5 GHz 45 48 − dB Isolation D/U-ratio 2 Note1 ISL2 f = 1.5 to 2.15 GHz 42 45 − dB Output Return Loss RL OUT f = 0.95 to 2.15 GHz 10 15 − dB Control Current Note2 Icont Vcont = +5 V/0 V, RF OFF −− 200 µA Notes 1.‘Isolation D/U-ratio’ = ‘signal leakage (off-state)’ − ‘insertion loss (on-state)’ 2. per 1 control pin TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE Vcont1 Vcont2 IN-A−OUT IN-B −OUT High Low ON OFF Low High OFF ON
Data Sheet PG10137EJ02V0DS4 µµµµPG186TQ TYPICAL CHARACTERISTICS (T A = +25°°°°C, Vcont = 0 V/+5 V, Pin = 0 dBm, ZO = 50 ΩΩΩΩ , Each Port) –10 –20 –40 –50 –30 –10 –20 –40 –50 –30 –10 –20 –40 –50 –30 Input Return Loss RLIN (dB) Frequency f (GHz) INPUT RETURN LOSS (ON ROUTE) vs. FREQUENCY INPUT RETURN LOSS (OFF ROUTE) vs. FREQUENCY Output Return Loss RLOUT (dB) Frequency f (GHz) OUTPUT RETURN LOSS (ON ROUTE) vs. FREQUENCY –10 –20 –40 –60 –80 –100 Insertion Loss LINS (dB) Frequency f (GHz) INSERTION LOSS vs. FREQUENCY Signal Leakage (dB) Frequency f (GHz) SIGNAL LEAKAGE vs. FREQUENCY Input Return Loss RLIN (dB) Frequency f (GHz) –10 –20 –40 –50 –30 OUTPUT RETURN LOSS (OFF ROUTE) vs. FREQUENCY Output Return Loss RLOUT (dB) Frequency f (GHz) 1: 0.95 GHz –1.29 dB 2: 1.5 GHz –1.33 dB 3: 2.15 GHz –1.37 dB 1: 0.95 GHz –18.3 dB 2: 1.5 GHz –18.4 dB 3: 2.15 GHz –17.9 dB 1: 0.95 GHz –8.00 dB 2: 1.5 GHz –10.2 dB 3: 2.15 GHz –12.0 dB 1: 0.95 GHz –52.0 dB 2: 1.5 GHz –50.5 dB 3: 2.15 GHz –50.6 dB 1: 0.95 GHz –18.6 dB 2: 1.5 GHz –20.5 dB 3: 2.15 GHz –23.3 dB 1: 0.95 GHz –18.4 dB 2: 1.5 GHz –19.6 dB 3: 2.15 GHz –22.8 dB 2 3 2 3 2 3 2 3 Remark The graphs indicate nominal characteristics.
Data Sheet PG10137EJ02V0DS 5 µµµµPG186TQ PACKAGE DIMENSIONS 10-PIN PLASTIC TSON (UNIT: mm) 2.40±0.15 2.20±0.1 2.25±0.1(0.6 MAX.) (0.125) (1.95) (0.95) (0.3) 2.55±0.15 (1.70) (0.35) (Bottom View) Remark ( ): Reference value
Data Sheet PG10137EJ02V0DS6 µµµµPG186TQ CIRCUIT DIAGRAM AS 2××××2 SWITCH MATRIX (REFERENCE ONLY) OUT1 IN-A IN-B OUT2 C RRC R R R RC PG186TQµ PG186TQµ C C: 56 pF R: 20 Ω
Data Sheet PG10137EJ02V0DS 7 µµµµPG186TQ RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10137EJ02V0DS8 µµµµPG186TQ M8E 00. 4 - 0110 The information in this document is current as of June 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0110 NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com Business issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918 Technical issue µµµµPG186TQ SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested.
- Do not destroy or burn the product.
- Do not cut or cleave off any part of the product.
- Do not crush or chemically dissolve the product.
- Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage.