UPG183GR RENESAS | Alldatasheet
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. GaAs INTEGRATED CIRCUIT µµµµPG183GR GaAs MMIC DBS 4 ×××× 2 IF Switch Document No. P15080EJ1V0DS00 (1st edition) Date Published October 2000 N CP(K) Printed in Japan PRELIMINARY DATA SHEET © 2000
DESCRIPTION
The µPG183GR is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required. It offers 4 intermediate frequency amplifier channels that can independently select 1 of 4 IF inputs. It is loused in a very small 16-pin plastic HTSSOP package available on tape-and-reel and easy to install and contributes to miniaturizing the systems.
FEATURES
- 4 independent IF channels
- Integral switching to channel input to either channel output
- Frequency range : 950 to 2 150 MHz
- Insertion loss per channel : 7.0 dB TYP. (Z O = 50 Ω )
- Channel to channel isolation : 26.5 dB TYP.
- Small 16-pin HTSSOP Package ORDERING INFORMATION (PLAN) Part Number Package Supplying Form µPG183GR-E1 16-pin Plastic HTSSOP Carrier tape width 12 mm. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG183GR) Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs MES-FET.
Preliminary Data Sheet P15080EJ1V0DS002 µµµµPG183GR ABSOLUTE MAXIMUM RATINGS (T A = +25°°°°C) Parameter Symbol Ratings Unit Control Voltage 1, 2, 3, 4, 5, 6, 7, 8 V CONT1, 2, 3, 4, 5, 6, 7, 8 −1.0 to +6.0 V Input Power P in +10 dBm Total Power Dissipation P tot 2 Note W Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −65 to +150 °C Note Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85°C PIN CONNECTION AND INTERNAL BLOCK DIAGRAM Pin No. Connection Pin No. Connection 1I N - C9 O U T 1 2G N D 1 0 V CONT4 3I N - D 1 1 V CONT3 4V CONT5 12 V CONT2 5V CONT6 13 V CONT1 6V CONT7 14 IN-A 7V CONT8 15 GND
8 OUT2 16 IN-B
(Top View)
Preliminary Data Sheet P15080EJ1V0DS00 3 µµµµPG183GR RECOMMENDED OPERATING CONDITIONS (T A = +25°°°°C) Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (High) VCONT(H) +4.5 +5.0 +5.5 V Control Voltage (Low) V CONT(L) −0.5 0 +0.5 V ELECTRICAL CHARACTERISTICS (T A = +25°°°°C, unless otherwise specified: VCONT1 to VCONT8 = 0/ +5 V, Pin = 0 dBm, ZO = 50 ΩΩΩΩ , Each Port) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 1 L INS1 f = 0.95 to 1.5 GHz − 7.0 9.0 dB Insertion Loss 2 L INS2 f = 1.5 to 2.15 GHz − 8.0 10.0 dB Insertion Loss Flatness ΔLINS | LINS (0.95 GHz) − LINS (2.15 GHz) | − 1.5 3.0 dB Channel Isolation 1 ISL1 f = 0.95 to 1.5 GHz 24 26.5 − dB Channel Isolation 2 ISL2 f = 1.5 to 2.15 GHz 22 23.5 − dB Output Return Loss RL out f = 0.95 to 2.15 GHz 10 14 − dB Control Current Note ICONT VCONT = +5 V/0 V, RF OFF −− 0.5 mA Note Per 1 control pin
Preliminary Data Sheet P15080EJ1V0DS004 µµµµPG183GR EVALUATION CIRCUIT (Preliminary) VCONT1 to VCONT8 = 0/ +5 V, Pin = 0 dBm, ZO = 50 ΩΩΩΩ , DC Blocking Capacitor = 51 pF VCONT1 VCONT4 51 pF 51 pF 51 pF 51 pF 1 000 pF 50 Ω ZO = 50 Ω ZO = 50 Ω IN-B IN-C OUT1 OUT2 IN-A 51 pF IN-D 51 pF VCONT2 VCONT3 1 000 pF 50 Ω VCONT5 VCONT8VCONT6 VCONT7 CHANNEL SELECT TRUTH TABLE On Channel Control Pin OUT1 OUT2 V CONT1 VCONT2 VCONT3 VCONT4 VCONT5 VCONT6 VCONT7 VCONT8 IN-A − High Low High Low −−−− IN-B − High Low Low High −−−− IN-C − Low High High Low −−−− IN-D − Low High Low High −−−− − IN-A −−−− High Low High Low − IN-B −−−− High Low Low High − IN-C −−−− Low High High Low − IN-D −−−− Low High Low High
Preliminary Data Sheet P15080EJ1V0DS00 5 µµµµPG183GR TYPICAL CHARACTERISTICS (T A = +25°°°°C) –4.70 dB
0.95 GHz
–5.16 dB
1.5 GHz
–6.28 dB
2.15 GHz
+10 –10 START 0.5 GHz STOP 2.5 GHz Frequency f (GHz) INSERTION LOSS vs. FREQUENCY log MAG. 2 dB/div. Insertion Loss LINS (dB) –35.84 dB –31.91 dB –29.17 dB +100 –100 START 0.5 GHz STOP 2.5 GHz Frequency f (GHz) ISOLATION vs. FREQUENCY log MAG. 20 dB/div. Isolation ISL (dB)
Preliminary Data Sheet P15080EJ1V0DS006 µµµµPG183GR –23.85 dB –14.79 dB –10.38 dB +50 –50 START 0.5 GHz STOP 2.5 GHz Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY log MAG. 10 dB/div. Input Return Loss RLin (dB) –18.61 dB –23.35 dB –17.77 dB +50 –50 START 0.5 GHz STOP 2.5 GHz Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY log MAG. 10 dB/div. Output Return Loss RLout (dB)
Preliminary Data Sheet P15080EJ1V0DS00 7 µµµµPG183GR PACKAGE DIMENSIONS 16-PIN HTSSOP (Unit: mm) (1.5) 0.9 –0.2 0.20 –0.10 (0.4) (2.7) (0.5) (1.8) (0.1) (2.5)5.2 –0.2 5.5 –0.3 6.4 –0.3
Preliminary Data Sheet P15080EJ1V0DS008 µµµµPG183GR RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 240°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR40-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet P15080EJ1V0DS00 9 µµµµPG183GR [MEMO]
Preliminary Data Sheet P15080EJ1V0DS0010 µµµµPG183GR [MEMO]
Preliminary Data Sheet P15080EJ1V0DS00 11 µµµµPG183GR [MEMO]
µµµµPG183GR CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. M8E 00. 4 The information in this document is current as of October, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).