UPG181GR NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. GaAs INTEGRATED CIRCUIT µµµµPG181GR GaAs MMIC DBS Twin IF Switch Document No. P14268EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) Printed in Japan DATA SHEET 1999© The mark shows major revised points.

DESCRIPTION

The µPG181GR is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required. It offers two intermediate frequency amplifier channels that can independently select 1 of 2 IF inputs. It is loused in a very small 16-pin plastic HTSSOP package available on tape-and-reel and easy to install and contributes to miniaturizing the systems.

FEATURES

  • Two Independent IF Channels
  • Integral Switching to Channel Input to Either Channel Output
  • Insertion Loss Per Channel : 5.0 dB TYP. (Z O = 50 Ω )
  • Frequency Range : 950 MHz to 2 150 MHz
  • Channel to Channel Isolation : 33 dB TYP.
  • Small 16-pin HTSSOP Package ORDERING INFORMATION (PLAN) Part Number Package Supplying Form µPG181GR-E1 16-pin Plastic HTSSOP Carrier tape width 12 mm. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG181GR) Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs MES-FET.

Data Sheet P14268EJ2V0DS002 µµµµPG181GR ABSOLUTE MAXIMUM RATINGS (T A = +25 °°°°C) Parameter Symbol Ratings Unit Control Voltage 1, 2, 3, 4 V CONT1, 2, 3, 4 −6 to +6 Note 1 V Total Power Dissipation P tot 2 Note2 W Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −65 to +150 °C Notes 1. | VCONT(H) − VCONT(L) | ≤ 6.0 V 2. Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TC = +85 °C PIN CONNECTION AND INTERNAL BLOCK DIAGRAM (TOP VIEW) Pin No. Connection Pin No. Connection Pin No. Connection Pin No. Connection 1I N 25 V CONT4 9O U T 1 1 3 V CONT1

2 GND 6 GND 10 GND 14 GND

3 GND 7 GND 11 GND 15 GND

4V CONT3 8O U T 2 1 2 V CONT2 16 IN1 16 15 14 13 12 11 10 9 12 34 56 78

Data Sheet P14268EJ2V0DS00 3 µµµµPG181GR RECOMMENDED OPERATING CONDITIONS (T A = +25 °°°°C) Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (High) VCONT(H) +4.5 +5 +5.5 V Control Voltage (Low) V CONT(L) −0.5 0 +0.5 V ELECTRICAL CHARACTERISTICS (T A = +25 °°°°C, unless otherwise specified: VCONT1 to VCONT4 = 0/ +5 V, ZO = 50 ΩΩΩΩ , LL, LR, RL, RR Each Port) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss L INS f = 0.95 GHz to 2.15 GHz − 5.0 7.0 dB Insertion Loss Flatness ΔLINS | LINS (0.95 GHz) − LINS (1.7 GHz) | − 0.5 1.2 dB Insertion Loss Flatness ΔLINS | LINS (0.95 GHz) − LINS (2.15 GHz) | − 0.8 1.5 dB Channel Isolation ISL f = 0.95 GHz to 1.7 GHz 30 33 − dB Channel Isolation ISL f = 1.7 GHz to 2.15 GHz 25 30 − dB Output Return Loss RL out f = 0.95 GHz to 2.15 GHz 13 16 − dB Control Current I CONT VCONT = +5 V/0 V, RF OFF −− 200 µA

Data Sheet P14268EJ2V0DS004 µµµµPG181GR EVALUATION CIRCUIT VCONT1 to VCONT4 = 0/ +5 V, ZO = 50 ΩΩΩΩ , DC Blocking Capacitor = 51 pF VCONT1 VCONT2 VCONT3 VCONT4 C = 51 pF C = 51 pF C = 51 pF C = 51 pF ZO = 50 Ω ZO = 50 Ω ZO = 50 Ω ZO = 50 Ω IN1 (L) IN2 (R) OUT1 OUT2 1 000 pF 1 000 pF 1 000 pF 1 000 pF CHANNEL SELECT TRUTH TABLE Output Control Pin OUT1 OUT2 On Channel VCONT1 VCONT2 VCONT3 VCONT4 LL IN1 − OUT1 IN1 − OUT2 Low High High Low LR IN1 − OUT1 IN2 − OUT2 Low High Low High RL IN2 − OUT1 IN1 − OUT2 High Low High Low RR IN2 − OUT1 IN2 − OUT2 High Low Low High

Data Sheet P14268EJ2V0DS00 5 µµµµPG181GR TYPICAL CHARACTERISTICS (T A = +25 °°°°C) 2 3 –4.49 dB

0.95 GHz

–4.93 dB

1.7 GHz

–5.31 dB

2.15 GHz

–10 –20 START 0.050 000 000 GHz STOP 5.050 000 000 GHz Frequency f (GHz) INSERTION LOSS vs. FREQUENCY log MAG 2 dB/div. Insertion Loss LINS (dB) 2 1: –54.70 dB –46.12 dB –40.84 dB –50 –100 START 0.050 000 000 GHz STOP 5.050 000 000 GHz Frequency f (GHz) ISOLATION vs. FREQUENCY log MAG 10 dB/div. Isolation ISL (dB)

Data Sheet P14268EJ2V0DS006 µµµµPG181GR –17.37 dB –15.07 dB –13.41 dB –25 –50 START 0.050 000 000 GHz STOP 5.050 000 000 GHz Ferquency f (GHz) INPUT RETURN LOSS vs. FREQUENCY log MAG 5 dB/div. Input Return Loss RLin (dB) 1 1: –32.13 dB –19.73 dB –19.68 dB –25 –50 START 0.050 000 000 GHz STOP 5.050 000 000 GHz Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY log MAG 5 dB/div. Output Return Loss RLout (dB) 2 3

Data Sheet P14268EJ2V0DS00 7 µµµµPG181GR PACKAGE DIMENSIONS

16 PIN HTSSOP (Unit: mm)

(1.5) 5.2 ±0.2 0.9 ±0.2 5.5 ±0.3 0.20 ±0.106.4 ±0.3 (Bottom View) (0.4)(2.7) (0.5) (1.8) (0.1) (2.5)

Data Sheet P14268EJ2V0DS008 µµµµPG181GR RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200 °C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P14268EJ2V0DS00 9 µµµµPG181GR [MEMO]

Data Sheet P14268EJ2V0DS0010 µµµµPG181GR [MEMO]

Data Sheet P14268EJ2V0DS00 11 µµµµPG181GR [MEMO]

µµµµPG181GR CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.

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