UPG158TB NEC | Alldatasheet
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. GaAs INTEGRATED CIRCUIT µµµµPG158TB L, S- BAND SPDT SWITCH Document No. P14267EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) Printed in Japan DATA SHEET 1999© The mark shows major revised points.
DESCRIPTION
The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
- Low Insertion Loss: LINS = 0.3 dB TYP. @VCONT = +3.0 V/0 V, f = 1 GHz LINS = 0.4 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz LINS = 0.5 dB TYP. @VCONT = +3.0 V/0 V, f = 2.5 GHz
- High isolation: ISL = 27 dB TYP. @VCONT = +3.0 V/0 V, f = 0.5 to 2 GHz
- Small 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)
APPLICATIONS
- L, S-band digital cellular or cordless telephone
- PCS, WLAN, WLL and Bluetooth applications
ORDERING INFORMATION
Part Number Marking Package Supplying Form µPG158TB-E3 G1M 6-pin super minimold Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perforation side. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG158TB) Caution The IC must be handled with care to prevent static discharge because its circuit is composed of GaAs MES FET.
Data Sheet P14267EJ2V0DS002 µµµµPG158TB ABSOLUTE MAXIMUM RATINGS (T A = +25 °°°°C) Parameter Symbol Ratings Unit Control Voltage 1, 2 V CONT1, 2 −6.0 to +6.0 Note V Input Power P in +28 dBm Total Power Dissipation P tot 0.15 W Operating Temperature T A −45 to +85 °C Storage Temperature T stg −45 to +150 °C Note Condition 2.5 ≤ | VCONT1 − VCONT2 | ≤ 6.0 V Remarks 1. Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C 2. Operation in excess of any one of these parameters may result in permanent damage. PIN CONNECTIONS Pin No. Connection Pin No. Connection 1O U T 14V CONT2 2G N D5 I N 3O U T 26V CONT1 RECOMMENDED OPERATING CONDITIONS (T A = +25 °°°°C) Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (High) V CONT +2.5 +3.0 +5.3 V Control Voltage (Low) V CONT −0.2 0 +0.2 V 3 4 2 5 1 6 (Top View) 4 3 5 2 6 1 (Bottom View)
Data Sheet P14267EJ2V0DS00 3 µµµµPG158TB
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25 °C, VCONT1 = 3 V, VCONT2 = 0 V or VCONT1 = 0 V, VCONT2 = 3 V, Off chip DC blocking capacitors value; 51 pF) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit f = 0.5 to 1.0 GHz − 0.3 0.55 f = 2.0 GHz − 0.4 0.65 Insertion Loss L INS f = 2.5 GHz − 0.5 Note1 dB f = 0.5 to 2.0 GHz 22 27 −Isolation ISL f = 2.5 GHz − 23 Note1 dB Input Return Loss RL in f = 0.5 to 2.0 GHz 13 19 − dB Output Return Loss RL out f = 0.5 to 2.0 GHz 13 19 − dB Input Power at 0.1 dB Compression Point Note2 Pin(0.1 dB) f = 1.0 GHz, VCONT = 3 V/0 V − 23.0 − dBm Input Power at 1 dB Compression Point Note2 Pin(1 dB) f = 1.0 GHz, VCONT = 3 V/0 V 22.0 26.5 − dBm Switching Speed t sw − 50 200 ns Control Current I CONT VCONT = 3 V/0 V − 0.5 10 µA Notes1. Characteristic for reference at 2.0 to 2.5 GHz 2. Pin(0.1 dB) or Pin(1 dB) is measured the input power level when the insertion loss increases more 0.1 dB or 1 dB than that of linear range. All other characteristics are measured in linear range. Cautions 1. When the µµµµPG158TB is used it is necessary to use DC blocking capacitors for No. 1 (OUT1), No.3 (OUT2) and No.5 (IN). The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, band width, switching speed and the condition with actual board of your system. The range of recommended DC blocking capacitor value is less than 100 pF. 2. The distance between IC’s GND pin and ground pattern of substrate should be as shorter as possible to avoid parasitic parameters.
Data Sheet P14267EJ2V0DS004 µµµµPG158TB TYPICAL CHARACTERISTICS TEST CONDITIONS: VCONT = 3 V/0 V, Pin = 0 dBm, TA = +25 °C CH1 50 Ω S11 log MAG 10 dB/ REF 0 dB –10 –20 –30 –40 Input Return Loss RLin (dB) START 0.300 000 000 GHz OUT2 OUT1 IN STOP 3.300 000 000 GHz Frequency f (GHz) –23.433 dB
1 GHz
–30.102 dB
1.5 GHz
–25.504 dB
2 GHz
–16.018 dB
2.5 GHz
CH1 S 21 log MAG 10 dB/ REF 0 dB –10 –20 –30 –40 Isolation ISL (dB) START 0.300 000 000 GHz STOP 3.300 000 000 GHz Frequency f (GHz) 2 3 –28.047 dB –28.565 dB –25.835 dB –22.507 dB IN-OUT1 ISOLATION vs. FREQUENCYIN-OUT1 INPUT RETURN LOSS vs. FREQUENCY CH1 S 21 log MAG 1 dB/ REF 0 dB Insertion Loss LINS (dB) START 0.300 000 000 GHz STOP 3.300 000 000 GHz Frequency f (GHz) 2 3 4 –0.574 dB –0.662 dB –0.795 dB –1.111 dB CH1 S 22 log MAG 10 dB/ REF 0 dB –10 –20 –30 –40 Output Return Loss RLout (dB) START 0.300 000 000 GHz STOP 3.300 000 000 GHz Frequency f (GHz) 2 3 –22.502 dB –28.139 dB –25.867 dB –15.601 dB IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCYIN-OUT1 INSERTION LOSS vs. FREQUENCY MARKER 1 Caution This data is including loss of the test fixture.
Data Sheet P14267EJ2V0DS00 5 µµµµPG158TB TEST CIRCUIT TA= +25 °C, VCONT1 = +3 V, VCONT2 = 0 V or VCONT1 = 0 V, VCONT2 = +3 V, f = 2 GHz Off chip DC blocking capacitors value: C0 = 51 pF, C1 = 1000 pF (Bypass), Using NEC standard evaluation board 1 2 3 6 5 4 OUT1 OUT2 C0C0 C1 C1 IN V CONT2VCONT1 EVALUATION BOARD OUT2OUT1 VCONT1 VCONT2IN
Data Sheet P14267EJ2V0DS006 µµµµPG158TB TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE VCONT1 VCONT2 VCONT(H) IN VCONT(L) VCONT(H) VCONT(L) OUT1 OUT2 IN OUT1 OUT2 IN OUT1 OUT2 IN OUT1 OUT2 PACKAGE DIMENSIONS
6 PIN SUPER MINIMOLD (UNIT: mm)
0 to 0.1 0.15 0.7 0.9 –0.1 0.65 0.65 1.3 2.0 –0.2 0.1 MIN. 0.2 +0.1 –0 +0.1–0 2.1 –0.1 1.25 –0.1
Data Sheet P14267EJ2V0DS00 7 µµµµPG158TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering method and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200 °C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per pin row) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
µµµµPG158TB CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
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