UPG153TB-E3

UPG153TB NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. GaAs INTEGRATED CIRCUIT µµµµPG153TB L-BAND SPDT SWITCH Document No. P13632EJ2V0DS00 (2nd edition) Date Published September 1999 N CP(K) Printed in Japan DATA SHEET 1998, 1999©The mark shows major revised points.

DESCRIPTION

The µPG153TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system.

FEATURES

• Low Insertion Loss : LINS = 0.7 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz
• High Linearity Switching: Pin (1 dB) = +33.0 dBm TYP. @VCONT = +3.0 V/0 V, f = 2 GHz
• Small 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)

APPLICATIONS

• L, S-band digital cellular or cordless telephone
• PCS, WLAN, and WLL applications

ORDERING INFORMATION

Part Number Marking Package Supplying Form µPG153TB-E3 G1J 6-pin super minimold Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perforation side. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG153TB) ABSOLUTE MAXIMUM RATINGS (T A = +25°C) Parameter Symbol Ratings Unit Control Voltage 1, 2 V CONT1, 2 –6.0 to +6.0 Note V Input Power P in +33 dBm Total Power Dissipation P tot 0.15 W Operating Temperature T A –45 to +85 °C Storage Temperature T stg –55 to +150 °C Note Condition 2.5 ≤ | VCONT1 – VCONT2 | ≤ 6.0 V Remarks 1. Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85°C 2. Operation in excess of any one of these parameters may result in permanent damage. Caution The IC must be handled with care to prevent static discharge because its circuit is composed of GaAs MES FET.

Data Sheet P13632EJ2V0DS002 µµµµPG153TB PIN CONNECTIONS Pin No. Connection Pin No. Connection 1O U T 14V CONT2 2G N D5 I N 3O U T 26V CONT1 RECOMMENDED OPERATING CONDITIONS (T A = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (Low) V CONT –0.2 0 +0.2 V Control Voltage (High) V CONT +2.5 +3.0 +5.3 V

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA = +25°C, VCONT1 = 3 V, VCONT2 = 0 V or VCONT1 = 0 V, VCONT2 = 3 V, ZO = 50 Ω , Off chip DC blocking capacitors value; 51 pF) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit f = 100 M to 1.0 GHz − 0.50 0.65 f = 2.0 GHz − 0.70 0.90 Insertion Loss L INS f = 2.5 GHz − 0.90 Note 1 dB f = 100 M to 2.0 GHz 10 13 − f = 1.0 GHz 15 18.5 − Isolation ISL f = 2.5 GHz − 10 Note 1 dB Input Return Loss RL in f = 100 M to 2.0 GHz 11 15 − dB Output Return Loss RL out f = 100 M to 2.0 GHz 11 15 − dB Input Power at 0.1 dB Compression Point Note 2 Pin (0.1 dB) f = 2.0 GHz − 29 − dBm Input Power at 1 dB Compression Point Note 2 Pin (1 dB) f = 2.0 GHz 31 33 − dBm Switching Speed t sw − 30 − ns Control Current I CONT VCONT = 3 V/0 V − 20 50 µA Notes 1. Characteristic for reference at f = 2.0 to 2.5 GHz 2. Pin (0.1 dB) or Pin (1 dB) is measured the input power level when the insertion loss increases more 0.1 dB or 1 dB than that of linear range. All other characteristics are measured in linear range. Cautions 1. When the µµµµPG153TB is used, it is necessary to use DC blocking capacitors for No. 1 (OUT1), No. 3 (OUT2) and No. 5 (IN). The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, band width, switching speed and the condition with actual board of your system. The range of recommended DC blocking capacitor value is less than 100 pF. 2. The distance between IC’s GND pin and ground pattern of substrate should be as shorter as possible to avoid parasitic parameters. 3 4 2 5 1 6 4 3 5 2 6 1 G1J (Top View) (Bottom View)

Data Sheet P13632EJ2V0DS00 3 µµµµPG153TB TYPICAL CHARACTERISTICS (ON) TEST CONDITIONS: VCONT = 3 V/0 V, Pin = 0 dBm, TA = +25 °C –10 Input Return Loss RLin (dB) –20 –30 –40 START 0.300 000 000 GHz CH1 S 11 10 dB/REF 0 dB Frequency f (GHz) IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY STOP 3.300 000 000 GHz Isolation ISL (dB) START 0.300 000 000 GHz CH1 S 12 log MAGlog MAG 10 dB/REF 0 dB Frequency f (GHz) IN-OUT1 ISOLATION vs. FREQUENCY STOP 3.300 000 000 GHz 1 32 Output Return Loss RLout (dB) START 0.300 000 000 GHz CH1 S 22 log MAG 10 dB/REF 0 dB Frequency f (GHz) IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY STOP 3.300 000 000 GHz Insertion Loss LINS (dB) START 0.300 000 000 GHz CH1 S 21 log MAG 1 dB/REF 0 dB Frequency f (GHz) IN-OUT1 INSERTION LOSS vs. FREQUENCY STOP 3.300 000 000 GHz 1: –24.057 dB

1 GHz

2: –37.231 dB

1.5 GHz

3: –25.963 dB

2 GHz

4: –19.332 dB

2.5 GHz

1: –0.764 dB 2: –0.957 dB 3: –1.215 dB 4: –1.516 dB –10 –20 –30 –40 MARKER 1 –10 –20 –30 –40 1: –18.937 dB 2: –15.032 dB 3: –12.119 dB 4: –10.675 dB 1: –22.622 dB 2: –28.228 dB 3: –27.318 dB 4: –18.235 dB 50 Ω Caution This data is including loss of the test fixture.

Data Sheet P13632EJ2V0DS004 µµµµPG153TB TYPICAL CHARACTERISTICS (OFF) TEST CONDITIONS: VCONT = 3 V/3 V, Pin = 0 dBm, TA = +25 °C –10 Input Return Loss RLin (dB) –20 –30 –40 START 0.300 000 000 GHz CH1 S 11 log MAG 10 dB/REF 0 dB Frequency f (GHz) IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY STOP 3.300 000 000 GHz 1: –10.653 dB 2: –11.354 dB 3: –11.745 dB 4: –11.111 dB –10 Output Return Loss RLout (dB) –20 –30 –40 START 0.300 000 000 GHz CH1 S 22 log MAG 10 dB/REF 0 dB Frequency f (GHz) IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY STOP 3.300 000 000 GHz –10 Insertion Loss LINS (dB) –20 –30 –40 START 0.300 000 000 GHz CH1 S 21 log MAG 10 dB/REF 0 dB Frequency f (GHz) IN-OUT1 INSERTION LOSS vs. FREQUENCY STOP 3.300 000 000 GHz 32 4 2 4 32 4 1: –12.642 dB 2: –12.038 dB 3: –11.728 dB 4: –12.291 dB 1: –4.066 dB 2: –4.072 dB 3: –4.130 dB 4: –4.382 dB 50 Ω Caution This data is including loss of the test fixture.

Data Sheet P13632EJ2V0DS00 5 µµµµPG153TB TEST CIRCUIT TA = +25°C, VCONT1 = +3 V, VCONT2 = 0 V or VCONT1 = 0 V, VCONT2 = +3 V, f = 2 GHz, ZO = 50 Ω Off chip DC blocking capacitors value: C0 = 51 pF, C1 = 1 000 pF (Bypass), using NEC standard evaluation board 456 321 G1J VCONT2INVCONT1 C0C0 OUT1 OUT2 EVALUATION BOARD OUT1 VCONT1 OUT2 V CONT2 IN

Data Sheet P13632EJ2V0DS006 µµµµPG153TB TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE VCONT1 VCONT1(H) VCONT(L) VCONT(H) IN OUT1 OUT2 Note IN OUT1 OUT2 VCONT2 VCONT(L) IN OUT1 OUT2 IN OUT1 OUT2 Note Note In case of VCONT1 = VCONT2 = High or VCONT1 = VCONT2 = Low, (that is same control voltage for both pins), input signal of IN (Pin 5) is output from OUT1 (Pin 1) and OUT2 (Pin 3). PACKAGE DIMENSIONS

6 PIN MINIMOLD (Unit: mm)

0 to 0.1 0.15 0.7 0.9 –0.1 0.65 0.65 1.3 2.0 –0.2 0.1 MIN. 0.2+0.1–0 +0.1–0 2.1 –0.1 1.25 –0.1

Data Sheet P13632EJ2V0DS00 7 µµµµPG153TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering method and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per pin row) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating).

µµµµPG153TB Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.

• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
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