UPG103B NEC | Alldatasheet

Document overview

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Technical content

µµµµµPG103B µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers. This device is most suitable for the microwave communication system and the measurement equipment.

FEATURES

  • Ultra wide band : f = 50 MHz to 3 GHz
  • Input/output impedance matched to 50 Ω
  • Hermetic sealed ceramic package assures high reliability

ORDERING INFORMATION

µPG103B T-31, 8 PIN CERAMIC ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Drain Voltage V DD +8 V Gate Voltage V GG –8 V Input Voltage V in –3 to +0.6 V Input Power P in +15 dBm Total Power Dissipation* P tot 1.5 W Operating Case Temperature Topt –65 to +125 ˚C Storage Temperature T stg –65 to +175 ˚C * TC ≤ 125 ˚C RECOMMENDED OPERATING CONDITIONS (T A = 25 ˚C) Drain Voltage V DD +5.0±0.5 V Gate Voltage V GG –5.0±0.5 V Operating Case Temperature Topt –50 to +80 ˚C Document No. P11342EJ1V0DS00 (1st edition) Date Published March 1996 P Printed in Japan WIDE-BAND AMPLIFIER

µµµµµPG103B ELECTRICAL CHARACTERISTICS (T A = 25 ˚C, VDD = +5V, VGG = –5V) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Current I DD 40 55 80 mA RF OFF Gate Current I GG 12 m A Power Gain G p 12 dB f = 0.05 to 2 GHz Power Gain G p 10 dB f = 2 to 3 GHz Gain Flatness G p ±1.5 ±2.0 dB f = 0.05 to 2 GHz Gain Flatness G p ±2.0 ±3.0 dB f = 0.05 to 3 GHz Noise Figure NF 4.0 4.5 dB f = 0.05 to 2 GHz Noise Figure NF 4.5 5.0 dB f = 2 to 3 GHz Input Return Loss RL in 6 10 dB f = 0.05 to 1 GHz Input Return Loss RL in 10 14 dB f = 1 to 2 GHz Input Return Loss RL in 6 10 dB f = 2 to 3 GHz Output Return Loss RL out 10 16 dB Isolation I SOL 30 40 dB f = 0.05 to 3 GHz Output Power at 1 dB Gain Compression Point TYPICAL PERFORMANCE CURVES Po (1dB) +7 +9 dBm D.C. POWER DERATING CURVE 2.0 1.5 1.0 0.5 0 50 100 125 150 200 T C - Case Temperature - °C PT - Total Power Dissipation - W

µµµµµPG103B OUTPUT POWER vs. INPUT POWER VDD = +5 V VGG = –5 V f = 1 GHz

2 GHz

3 GHz

P i - Input Power - dBm –10 0–20 +10 ISOLATION vs. FREQUENCY VDD = +5 V VGG = –5 V f - Frequency - MHz Po - Output Power - dBm ISOL - Isolation - dB 20 50 100 500 1000 5000 INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY VDD = +5 V VGG = –5 V f - Frequency - MHz RL - Return Loss - dB 20 50 100 500 1000 5000200 200 in out POWER GAIN AND NOISE FIGURE vs. FREQUENCY VDD = +5 V VGG = –5 V f - Frequency - MHz G p - Power Gain - dB 20 50 100 500 1000 5000200 NF - Noise Figure - dB G P NF

µµµµµPG103B TEST CIRCUIT EQUIVALENT CIRCUIT VDD 1000 pF IN 100 pF* 15 100 pF* OUT 2, 4, 6, 8 VGG 1000 pF * Chip capacitor VDD C1 L3 C2 RL1 RL2 RL2 L2 C4C3 RF1 R1 R2 OUT IN VGG

µµµµµPG103B OUTLINE DIMENSIONS (Unit : mm) 1.27±0.11.27±0.1 4–0.6 4–0.4 432 678 3.8±0.2 10.6 MAX. 10.6 MAX. 1.7 MAX. 0.2 +0.05 –0.02 PACKAGE OUTLINE PIN CONNECTIONS: 1. INPUT 2. GND 3. V GG 4. GND 5. OUTPUT 6. GND 7. V DD 8. GND

µµµµµPG103B RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535EJ7V0IF00). µPG103B Soldering process Soldering conditions Symbol Infrared ray reflow Peak package’s surface temperature: 230 ˚C or below, Reflow time: 10 seconds or below (210 ˚C or higher), Number of reflow process: 1, Exposure limit*: None Partial heating method Terminal temperature: 260 ˚C or below, Flow time: 10 seconds or below, Exposure limit*: None * Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 ˚C and relative humidity at 65 % or less. Note Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION This IC must be handled with great care to prevent static discharge because its circuitry is composed of GaAs MES FET. Caution The Grate Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the Japanese law concerned. Keep the Japanese law concerned and so on, especially in case of removal.

µµµµµPG103B [MEMO]

µµµµµPD103B No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11