UPG100P NEC | Alldatasheet

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PPPPPG100P, PPPPPG101P WIDE BAND AMPLIFIER CHIPS 1992© Document No. P12402EJ2V0DS00 (2nd edition) (Previous No. IC-3144) Date Published February 1997 N Printed in Japan DATA SHEET

DESCRIPTION

PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the IF stage of microwave communication system and the measurement equipment.

FEATURES

  • Wide band : f = 50 MHz to 3 GHz

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) PPG100P PPG101P Drain Voltage V DD +8 +10 V Gate Voltage V GG ð8 ð8V Input Voltage V in ð3 to +0.6 ð5 to +0.6 V Input Power P in +15 +15 dBm Total Power Dissipation P tot 1.5 1.5 W Operating Temperature T opr ð65 to +125 ð65 to +125 °C Storage Temperature T stg ð65 to +175 ð65 to +175 °C *1 Mounted with AuSn hard solder *2 The temperature of base material baside the chip

PPPPPG100P , PPPPPG101P ELECTRICAL CHARACTERISTICS (T A = 25 °C) PPG100P (VDD = +5 V, VGG = ð5 V) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Current I DD 30 45 60 mA RF OFF Gate Current I GG 0.7 1.5 mA Power Gain Gp 14 16 dB f = 0.05 to 3 GHz Gain Flatness 'Gp r1.5 dB Noise Figure NF 2.7 3.5 dB Input Return Loss RL in 71 0 d B Output Return Loss RL out 71 0 d B Isolation I SOL 30 40 dB Output Power at 1 dB Gain Compression Point PO(1 dB) +3 +6 dBm PPG101P (VDD = +8 V, VGG = ð5 V) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Current I DD 70 100 140 mA RF OFF Gate Current I GG 1.0 3.0 mA Power Gain Gp 12 14 dB f = 0.05 to 3 GHz Gain Flatness 'Gp r1.5 dB Noise Figure NF 5 7 dB Input Return Loss RL in 68 d B Output Return Loss RL out 68 d B Isolation I SOL 30 40 dB Output Power at 1 dB Gain Compression Point PO(1 dB) +16 +18 dBm *3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1.

PPPPPG100P , PPPPPG101P Fig. 1 8 Pin Ceramic Package 34 2 1.27–0.11.27–0.1 4–0.6 3.8–0.2 4–0.4 10.6 MAX. 1.7 MAX. 0.2 +0.05 –0.02

PPPPPG100P , PPPPPG101P TYPICAL CHARACTERISTICS PPG100P (VDD = +5 V, VGG = ð5 V) 10 20 50 100 200 500 1000 2000 5000 POWER GAIN AND NOISE FIGURE vs. FREQUENCY f - Frequency - MHz G p - Power Gain - dB NF – Noise Figure – dB TA = –25 °C TA = +25 °C TA = +75 °C G p NF 10 20 50 100 200 500 1000 2000 5000 INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY f - Frequency - MHz RL - Return Loss - dB 10 20 50 100 200 500 1000 50002000 ISOLATION vs. FREQUENCY f - Frequency - MHz ISOL - Isolation - dB –10 –20 OUTPUT POWER vs. INPUT POWER Pi - Input Power - dBm PO - Output Power - dBm –10 0 +10 RL out RL in f = 1 GHz f = 2 GHz f = 3 GHz

PPPPPG100P , PPPPPG101P PPG101P (VDD = +8 V, VGG = ð5 V) 10 20 50 100 200 500 1000 2000 5000 POWER GAIN AND NOISE FIGURE vs. FREQUENCY f - Frequency - MHz G p - Power Gain - dB NF - Noise Figure - dB NF G p 10 20 50 100 200 500 1000 2000 5000 INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY f - Frequency - MHz RL - Return Loss - dB RL out RL in 10 20 50 100 200 500 1000 2000 5000 ISOLATION vs. FREQUENCY f - Frequency - MHz ISOL - Isolation - dB –10 OUTPUT POWER vs. INPUT POWER Pi - Input Power - dBm PO - Output Power - dBm 01 0 TA = –25 °C TA = +25 °C TA = +75 °C f = 1 GHz f = 2 GHz f = 3 GHz *4 These characteristics are measured for device mounted in the standard package shown in Fig. 1.

PPPPPG100P , PPPPPG101P CHIP DIMENSIONS (Unit : mm) PPG100P 8910 23 4 1.3 1: IN 2: GND 3: GND 4: V GG 5: GND 6: GND 7: OUT 8: GND 9: V DD 10: GND 1.0 Bonding Pad Size: 100 m × 100 mµµ PPG101P 8910 23 4 1.3 1: IN 2: GND 3: GND 4: V GG 5: GND 6: GND 7: OUT 8: GND 9: V DD 10: GND 1.0 Bonding Pad Size: 100 m ∞ 100 mµµ

PPPPPG100P , PPPPPG101P RECOMMENDED CHIP ASSEMBLY CONDITIONS Die Attachment Atmosphere : N 2 gas Temperature : 320 r5 °C AuSn Preform : 0.5 u 0.5 u 0.05 t (mm), 2 pcs. * The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Base Material : CuW, Cu, KV * Other material should not be used. Epoxy Die Attach is not recommended. Bonding Machine : TCB * USB is not recommended Wire : 30 Pm diameter Au wire Temperature : 260 r5 °C Strength : 31 r3 g Atmosphere : N 2 gas QUALITY ASSURANCE (Refer to GET-30116) 1. 100 % Tests 1-1 100 % DC and RF Probe 1-2 Visual Inspection MIL-STD-883/Method 2010 Condition B 2. Tests on Sampling Basis 2-1 Bond Pull Tests (In case of recommended chip handling) MIL-STD-883 Method 2011 5 samples/wafer and 20 points tested Accept 0/Reject 1 2-2 Tests in Standard Package Test the electrical characteristics of chips assembled into the standard package used for PPG100B and PPG101B. 5 samples/wafer tested DC and RF measurement Accept 1/Reject 2 3. WARRANTEE NEC has a responsibility of quality assurance for the products within 180 days after delivered to customers where these are handled properly and stored in the desicater with the flow of dry N 2 gas. 4. CAUTION 4-1 Take great care to prevent static electricity. 4-2 Be sure that Die Attach is performed in N2 atmosphere.

PPPPPG100P , PPPPPG101P No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5