UPG100B NEC | Alldatasheet

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Technical content

FEATURES

  • ULTRA WIDE BAND: 50 MHz to 3 GHz
  • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz
  • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
  • HERMETIC SEALED PACKAGE ASSURES HIGH RELIABILITY
  • WIDE OPERATING TEMPERATURE RANGE POWER GAIN AND NOISE FIGURE vs. FREQUENCY Frequency, f (MHz) Power Gain, GP (dB) 10 20 50 100 200 500 1000 5000 GP NF VDD = +5 V, VGG = -5 V TA = -25˚C TA = +25˚C TA = +75˚C Noise Figure, NF (dB) PART NUMBER UPG100B, UPG100P PACKAGE OUTLINE B08, CHIP SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX IDD Drain Bias Current (RF off) mA 30 45 60 IGG Gate Bias Current (RF off) mA 0.7 1.5 G P Power Gain dB 14 16 ΔG L Flatness Gain dB ±1.5 NF Noise Figure dB 2.7 3.5 P1dB Output Power at 1 dB gain compression point dBm +3 +6 RL IN Input Return Loss dB 7 10 RLOUT Output Return Loss dB 7 10 ISOL Isolation dB 30 40 R TH (CH-C) Thermal Resistance (Channel to Case) °C/W 33 ELECTRICAL CHARACTERISTICS (TA = 25°C, VDD = +5V, VGG = -5 V, f = 0.05 to 3 GHz, Zs = ZL = 50 Ω )

DESCRIPTION

The UPG100 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. This device is suitable for low noise IF gain stages in microwave commu- nication and measurement equipment. California Eastern Laboratories

UPG100B, UPG100P SYMBOLS PARAMETERS UNITS RATINGS VDD Drain Voltage V +8 VGG Gate Voltage V -8 VIN Input Voltage V -3 to +0.6 PIN Input Power dBm +15 PT Total Power Dissipation2 W 1.5 Top Operating Temperature °C -65 to +125 TSTG Storage Temperature °C -65 to +175 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) TYPICAL PERFORMANCE CURVES (TA = 25°C) RL OUT RL IN VDD = +5V VGG = -5V0 10 20 50 100 200 500 1000 5000 Frequency, f (MHz) Return Loss, RL (dB) 10 20 50 100 200 500 1000 5000 VDD = + 5 V VGG = - 5 V Frequency, f (MHz) f = 1 GHz f = 2 GHz f = 3 GHz VDD = +5v VGG = -5V +10 -10 -20 -10 0 Input Power, PIN (dBm) Case Temperature, TC (C°) 50 100 150 200 2.0 1.5 1.0 0.5 Total Power Dissipation, PT (W) Output Power, POUT (dBm) Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. 2. T CASE (TC) ≤ 125°C ISOLATION vs. FREQUENCY Isolation, ISOL (dB) RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX VDD Drain Voltage V 4.5 5.0 5.5 VGG Gate Voltage V -5.5 -5.0 -4.5 PIN Input Power dBm 10 TOP Operating Temperature °C -50 25 +80 OUTPUT POWER vs. INPUT POWER D. C. POWER DERATING CURVE INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY

3rd Order Intermodulation, IM3(dBm) TYPICAL PERFORMANCE CURVES (TA = 25°C) 3RD ORDER INTERMODULATION and OUTPUT POWER vs. INPUT POWER Output Power, POUT (dBm) Input Power, PIN (dBm) UPG100B V DD = 5.0 V VGG = -5.0 V Frequency S 11 S21 S12 S22 kS 21 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPG100B, UPG100P C 1 L 1 VDD C 2 R L1 R L2R F1 IN R 1 R 2 R 3 C 3 L2 C 4 R 4 R 5 R 6 OUT R F2 VGG EQUIVALENT CIRCUIT -10 -20 -20 -10 0

2.2 GHz

P1dB = 7.3 dBm

923 MHz

-20 -40 -60 Δf = 5 MHz IDD = 42 mA VDD = +5 V VGG = -5 V P1dB = 8.6 dBm -30 10 TYPICAL SCATTERING PARAMETERS (TA = 25°C)

1000 pF** 100 pF* 100 pF*IN OUT 1 5 2, 4, 6, 8 VGG 1000 pF * Chip Capacitor **Recommended when cascading UPG100 with NEC's UPG100, 101, 103B's. OUTLINE DIMENSIONS (Units in mm) UPG 100B 1.27±0.1 1.27±0.1

10.6 MAX

3.8±0.2 4 3 2 6 7 8 3.8±0.2

1.7 MAX

0.2+0.05 -0.02 PACKAGE OUTLINE B08 1.0 mm 1.3 mm IN GND VDD GND OUT GNDGND GND VGG LEAD CONNECTIONS: 1. INPUT 5. OUTPUT 2. GND 6. GND 3. V GG 7. VDD 4. GND 8. GND RECOMMENDED CHIP ASSEMBLY CONDITIONS DIE ATTACHMENT Atmosphere: N2 gas Temperature: 320± 5°C AuSn Preform: 0.5 x 0.5 x 0.05 t (mm), 1 piece The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Epoxy Die Attach is not recommended. Base Material: CuW, Cu, Kovar (Other material should not be used) BONDING Machine: Thermo-compression bonding. Ultrasonic bonding is not recommended. Wire: 30 µm diameter Au wire, 10 wires Temperature: 260 ± 5°C Strength: 31 ± 3g Atmosphere: N2 gas It is critical that GND points be connected to the ground with the shortest possible wire. Notes: Bonding Pad Size: 100 µm Square Distance between Bonding Pad Outer Edge and Die Edge: 70 µm Typical Chip Thickness: 140± 10 µm UPG100P (CHIP) UPG100B, UPG100P EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -10/97DATA SUBJECT TO CHANGE WITHOUT NOTICE