UPFS120P MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • POWERMITE 3 Surface Mount Package SURFACE MOUNT P – CHANNEL MOSKEY 
  • MOSFET with Schottky Rectifier for reverse voltage blocking
  • Single 3 leaded device replaces 2 individual components
  • Integral Heat Sink / Locking Tabs
  • Supplied in 16mm Tape and Reel – 6000 units/reel
  • Superior Low Thermal and Electrical capability Mechanical Characteristics
  • Footprint Area of 16.51 mm2
  • Case: Molded Epoxy
  • Meets UL94VO at 1/8 inch
  • Weight: 72 milligrams
  • Lead and Mounting Temperatures: 260°C max for 10 seconds

Description

The MOSKEY combines a MOSFET with a Schottky Recti- fier to provide reverse blocking capability in a single three leaded package. This device is well suited for applications such as battery chargers and switching where the intrinsic source-drain diode is an undesirable feature. Absolute Maximum Ratings at 25°C RATING SYMBOL VALUE UNIT Cathode-to-Source Voltage VKSS +/- 20 Vdc Gate-to-Source Voltage VGS +/- 10 Vdc Cathode Current: Continuous @ TA=25°C IK 1.0 Adc Single Pulsed IKM 6.0 Apk Total Power Dissipation PD (1) 1.9 Watts Storage Temperature T stg -55 to 150°C °C Operating Temperature T op -55 to 150°C °C Thermal Characteristics Thermal Resistance: Junction to Tab Rjtab 20 °C/Watt (1)Junction-to-ambient Rja (1) 65 °C/Watt (2)Junction-to-ambient Rja (2) 150 °C/Watt (1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x1” square 2 ounce copper pattern. (2) Mounted on 0.06 thick FR4 board, using recommended footprint. PRELIMINARY

Electrical Characteristics at 25°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVKSS Cathode-Source Breakdown Voltage VGS= 0V; IK = 250uA 20 V IKSSF Zero Gate Voltage Cathode Current: Forward VKS= -16V, VGS = 0V 1 uA IKSSR Zero Gate Voltage Cathode Current:Reverse VKS= +16V, VGS = 0V 1 mA IGSS Gate-Body Leakage Current VGS= +/- 8V, VKS = 0V 100 nA ON CHARACTERISTICS (pulsed 500us max, duty cycle < 2%) VGS(TH) Gate Threshold Voltage VKS > VGS; IK = 250uA 1 1.9 3 V DELTA VGS(TH)/ TJ Gate Threshold Voltage Temp Coefficient IK = 250uA, Reference to 25°C 3.5 mV/°C VKS (ON) Static Cathode-Source On Voltage VGS = 4.5 V; IK = 1A 750 mV VKS (ON) Static Cathode-Source On Voltage VGS = 4.5 ; IK = 0.5A 550 mV IK(ON) On State Cathode Current VGS = 4.5 V; VKS = 5V 3 A Gfs Forward Transconductance VDS = 5V; IK = 0.5A 3 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VKS = 15 V; VGS = 0V, F = 1MHz 165 pF Coss Output Capacitance VKS = 15 V; VGS = 0V, F = 1MHz 60 pF Crss Reverse Transfer Capacitance VKS = 15 V; VGS = 0V, F = 1MHz 25 pF SWITCHING CHARACTERISTICS Td(ON) Turn On Delay Time VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω 8 20 ns Tr Turn On Rise Time VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω 9 20 ns Td(OFF) Turn Off Delay time VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω 14 30 ns Tf Turn Off Fall time VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω 2 10 ns Qg Total Gate Charge VDS = 15V, IK = 1A, VGS = 10V 3.5 5 nC Qgs Gate-Source Charge VDS = 15V, IK = 1A, VGS = 10V 0.6 nC Qgd Gate-Cathode Charge VDS = 15V, IK = 1A, VGS = 10V 0.8 nC PRELIMINARY