UPF1N100 MICROSEMI | Alldatasheet

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Technical content

FeaturesFeaturesFeaturesFeatures

  • Rugged POWERMITE 3  Surface Mount Package
  • Low On-State Resistance
  • Avalanche and Surge Rated
  • High Frequency Switching
  • Ultra Low Leakage current
  • UIS rated
  • Available with Lot Acceptance Testing

Description

PARAMETER SYMBOL VALUE UNIT Drain-to-Source Voltage VDSS 1000 Volts Gate- to -Source Voltage VGS +/- 20 Volts Continuous Drain Current @ TC = 25°°°°C ID1 1.0 Amps Continuous Drain Current @ TC=100°°°°C ID2 0.27 Amps Avalanche Current IAR 1.0 Amps Repetitive Avalanche Energy EAR 3.5 mJ Single Pulse Avalanche Energy EAS 120 mJ Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125 °°°°C Steady-state Thermal Resistance, Junction-to-Tab RθθθθJ-TAB 2.5 °°°°C/Watt Static Electrical Characteristics SYMBOL CHARACTERISTICS / TEST CONDITIONS MIN TYP MAX UNIT BV DSS Drain to Source Breakdown Voltage (VGS=0V, ID=0.25mA) 1000 Volts VGS(TH)2 Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=37°°°°C ) 3.4 Volts VGS(TH)1 Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=25°°°°C ) 2 3.5 4.5 Volts R DS(ON)1 Drain to Source ON-State Resistance (VGS=10V, ID=ID 1 , TJ=25°°°°C ) 12.5 13.5 Ohms R DS(ON)2 Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=37°°°°C) 12.5 Ohms R DS(ON)3 Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=25°°°°C) 11.5 Ohms R DS(ON)4 Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=60°°°°C) 15.0 Ohms R DS(ON)5 Drain to Source ON-State Resistance (VGS=7V, ID=ID 1 , TJ=125°°°°C ) 25.5 Ohms IDSS1 Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ= 25°°°°C ) 25 uA IDSS2 Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ=125 °°°°C ) 250 uA IGSS1 Gate to Source Leakage Current (VGS= ±±±±20V, VDS=0V, TJ = 25°°°°C ) ±±±±100 nA IGSS2 Gate to Source Leakage Current (VGS= ±±±±20V, VDS=0V, TJ = 37°°°°C ) 10.0 nA IGSS3 Gate to Source Leakage Current (VGS= ±±±±20V, VDS=0V, TJ=125°°°°C ) 25 uA

580 Pleasant Street

Watertown, MA 02472 Phone:(617) 926-0404 F A X : (617) 924-1235 SURFACE MOUNT N – CHANNEL MOSFET This device is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package.

Dynamic Electrical Characteristics SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0 V VDS = 25 V f = 1MHZ 290 375 pF pF pF Qg Qgs Qgd Total Gate Charge Gate to Source Charge Gate to Drain Charge V GS = 10 V VDS = 0.5 VDSS IC = 20 mA 1.0 nC nC nC td (on) Turn-ON Delay Time 6.3 ns t r Rise Time 5.9 ns td Turn-OFF Delay Time 315 ns t f Fall Time Resistive Switching (25°°°°C) VGS = 10 V, VDS = 0.5 BVDSS ID = 20 mA Rg = 1.6 ΩΩΩΩ 2.6 us td (on) Turn-ON Delay Time 6.3 ns t r Rise Time 5.8 ns td (off) Turn-OFF Delay Time 76 ns t f Fall Time Resistive Switching (25°°°°C) VGS = 10 V, VDS = 0.5 BVDSS ID = 100 mA Rg = 1.6 ΩΩΩΩ 470 ns VSD Diode Forward Voltage VGS = 0 V, IS = 1 A, TJ = 37°°°°C 0.825 1.0 V t rr Reverse Recovery Time I S = 1 A, dIs/dt = 100 A/us 121 300 ns Qrr Reverse Recovery Charge I S = 1 A, dIs/dt = 100 A/us 0.415 0.8 uC MECHANICAL SPECIFICATIONS