UPC8128TB-E3

UPC8128TB RENESAS | Alldatasheet

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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUITS µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES Document No. P12549EJ3V0DS00 (3rd edition) Date Published February 2001 N CP(K) Printed in Japan DATA SHEET © 1997, 2001 The mark shows major revised points.

DESCRIPTION

The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 Ω wideband matched IC. These low current amplifiers operate on 3.0 V. These ICs are manufactured using NEC’s 20 GHz f T NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES

Supply voltage : VCC = 2.4 to 3.3 V Low current consumption : µPC8128TB ; I CC = 2.8 mA TYP. @VCC = 3.0 V µPC8151TB ; I CC = 4.2 mA TYP. @VCC = 3.0 V µPC8152TB ; I CC = 5.6 mA TYP. @VCC = 3.0 V High efficiency : µPC8128TB ; P O(1 dB) = −4.0 dBm TYP. @f = 1 GHz µPC8151TB ; P O(1 dB) = +2.5 dBm TYP. @f = 1 GHz µPC8152TB ; P O(1 dB) = −4.5 dBm TYP. @f = 1 GHz Power gain : µPC8128TB, 8151TB ; GP = 12.5 dB TYP. @f = 1 GHz µPC8152TB ; G P = 23 dB TYP. @f = 1 GHz Excellent isolation : µPC8128TB ; ISL = 39 dB TYP. @f = 1 GHz : µPC8151TB ; ISL = 38 dB TYP. @f = 1 GHz : µPC8152TB ; ISL = 40 dB TYP. @f = 1 GHz Operating frequency : 100 to 1 900 MHz (Output port LC matching) High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) Light weight : 7 mg (Standard value) APPLICATION Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones

µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC8128TB-E3 C2P µPC8151TB-E3 C2U µPC8152TB-E3 6-pin super minimold C2V

Embossed tape 8 mm wide
1, 2, 3 pins face the perforation side of the tape
Qty 3 kpcs/reel Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: µPC8128TB, µPC8151TB, µPC8152TB PIN CONNECTIONS Pin No. Pin Name

1 INPUT

(Top View) (Bottom View) Marking is an example of PC8128TBµ

Data Sheet P12549EJ3V0DS 3 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 ΩΩ ΩΩ)

1.0 GHz output port

1.66 GHz output port

1.9 GHz output port

2.4 GHz output port

Part No. ICC (mA) GP (dB) ISL (dB) PO(1 dB) (dBm) GP (dB) ISL (dB) PO(1 dB) (dBm) GP (dB) ISL (dB) PO(1 dB) (dBm) GP (dB) ISL (dB) PO(1 dB) (dBm) Marking Remarks Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE EXAMPLE OF DIGITAL CELLULER TELEPHONE RX SW TX ÷N PLL PLL I Q I Q DEMOD. 90°PA φ These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation.

µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT − 0.90 1.06 0.80 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connec- tion over a wide band. This pin must be coupled to signal source with capacitor for DC cut. GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be con- nected together with wide ground pattern to decrease impedance defference.

4 OUTPUT voltage

− Signal output pin. This pin is de- signed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1005 chip in-ductor can be chosen. 6V CC 2.4 to 3.3 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its inpedance. 23 5 PC8152TB 2 5 3 PC8128TB, PC8151TBµµ µ Note Pin voltage is measured at VCC = 3.0 V. Above: µPC8128TB, Center: µPC8151TB, Below: µPC8152TB

Data Sheet P12549EJ3V0DS 5 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 4, Pin 6 3.6 V Circuit Current ICC TA = +25°C 15 mA Power Dissipation PD Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin TA = +25 °C +5 dBm RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remark Supply Voltage VCC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Frequency fopt 0.1 − 1.9 GHz Matched output port with external LC

µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 ΩΩ ΩΩ, at LC matched frequency) µPC8128TB µPC8151TB µPC8152TB Parameter Symbol Conditions Unit Power Gain GP f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 9.5 12.5 14.5 9.5 12.5 14.5 16.5 14.5 19.5 17.5 21.5 19.5 dB Isolation ISL f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz dB Gain 1 dB Compression Output Power P O(1 dB) f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz −7.5 −8.5 −8.5 −4.0 −4.0 −4.0 −1.0 −2.5 −3.0 +2.5 +1.5 +0.5 −7.5 −11.5 −11.5 −4.5 −8.5 −8.5 dBm Saturated Output Power Note (Pin = −6 dBm) PO(sat) f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz −2.5 −5.5 −7.0 +0.5 −2.5 −3.0 dB Noise Figure NF f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 6.0 6.0 6.0 7.5 7.5 7.5 6.0 6.0 6.0 7.5 7.5 7.5 3.5 4.0 4.5 5.0 5.5 6.0 dB Input Return Loss (without matching circuit) RL in f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 2.5 5.5 8.5 7.5 8.5 11.5 10.5 11.5 dB Note Saturated output power is specified only in µPC8152TB which has flat saturated region. STANDARD CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 ΩΩ ΩΩ, at LC matched frequency) Reference Value Parameter Symbol Conditions µPC8128TB µPC8151TB µPC8152TB Unit Output Return Loss (with external matching circuit) RL out f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 7.5 dB 3rd Order Intermodulation Distortion IM 3 f1 = 1.000 GHz, f2 = 1.001 GHz, PO(each) = −20 dBm f1 = 1.660 GHz, f2 = 1.661 GHz, PO(each) = −20 dBm f1 = 1.900 GHz, f2 = 1.901 GHz, PO(each) = −20 dBm −50 −46 −46 −62 −56 −54 −51 −43 −42 dBc

Data Sheet P12549EJ3V0DS 7 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB TEST CIRCUIT IN OUT 50 Ω 2,3,5 150 Ω C1 C2 VCC Output port matching CIRCUIT C6C7

µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD µµ µµPC8128TB/µµ µµPC8151TB OUT IN PC8128/ 51/52TB Top View Mounting direction connector connector (Marking is an example for PC8128TB)µ µ C2P C1 COMPONENT LIST 1.0 GHz output port matching 1.66 GHz output port matching 1.9 GHz output port matching C1, C3 to C6 1 000 pF 1 000 pF 1 000 pF C2 1.0 pF 0.75 pF 0.75 pF L1 8.2 nH 3.3 nH 2.2 nH

Data Sheet P12549EJ3V0DS 9 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB µµ µµPC8152TB C2V Top View Mounting direction OUT IN PC8128/ 51/52TB µ connector connector COMPONENT LIST 1.0 GHz output port matching 1.66 GHz output port matching 1.9 GHz output port matching C1, C3 to C7 1 000 pF 1 000 pF 1 000 pF C2 1.5 pF 1.0 pF 1.5 pF L1 8.2 nH 1.8 nH 1.2 nH Notes 1. 42 × 35 × 0.4 mm double-sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes

Data Sheet P12549EJ3V0DS10 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB EXAMPLE OF APPLICATION CIRCUIT (µµ µµPC8128TB, µµ µµPC8151TB) In improving RLin of µPC8128TB and µPC8151TB at 1.0 GHz, L2 should be attached. IN OUT 50 Ω 2,3,5 150 Ω C1 L2 C2 VCC Output port maching CIRCUIT In improving RLin of µPC8128TB and µPC8151TB at 1.66 GHz to 1.9 GHz, C’ should be attached. IN OUT 50 Ω 2,3,5 150 Ω C1 VCC Output port matching CIRCUIT

Data Sheet P12549EJ3V0DS 11 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) – µPC8128TB – 01234 Circuit Current ICC (mA) Operating Ambient Temperature TA (°C)Supply Voltage VCC (V) –60 –40 –20 +20 +40 +60 +80 +1000 CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE No signal VCC = 3.0 V Circuit Current ICC (mA)

Data Sheet P12549EJ3V0DS12 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB –

1.0 GHz output port matching

S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 45.664 Ω –69.156 Ω MARKER 1

1.0 GHz

START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 30.865 Ω 11.494 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS 13 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – –40 –30 –20 –10 +10 +20 –50 0.1 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY –40 –30 –20 –10 +10 +20 –50 0.1 0.3 1.0 3.0 –60 –50 –40 –30 –70 0.1 0.3 1.0 3.0 Isolation ISL (dB) –60 –50 –40 –30 –70 0.1 0.3 1.0 3.0 –15 –10 –20 0.1 0.3 1.0 3.0 Input Return Loss RLin (dB) –15 –10 –20 0.1 0.3 1.0 3.0 VCC = 3.0 V VCC = 3.0 V VCC = 3.0 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V TA = +85°C TA = +25°C TA = –40°C VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V TA = +85°C TA = +25°C TA = –40°C VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V TA = +85°C TA = +25°C TA = –40°C ISOLATION vs. FREQUENCY ISOLATION vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Frequency f (GHz) Frequency f (GHz) Frequency f (GHz) Input Return Loss RLin (dB) Isolation ISL (dB) Power Gain GP (dB) Power Gain GP (dB)

Data Sheet P12549EJ3V0DS14 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – OUTPUT RETURN LOSS vs. FREQUENCY VCC = 3.0 V VCC = 3.0 V –20 –10 +10 –30 0.1 0.3 1.0 3.0 Output Return Loss RLout (dB) Frequency f (GHz) Frequency f (GHz) VCC = 3.3 V VCC = 3.0 V VCC = 3.3 V VCC = 3.0 V TA = +85°C TA = +25°C TA = –40°C TA = +85°C TA = –40°C VCC = 2.4 V VCC = 2.4 V –20 –10 +10 –30 0.30.1 1.0 3.0 –20 –25 –10 –15 +10 –30 Output Power Pout (dBm) Input Power Pin (dBm) Input Power Pin (dBm) –60 –70 –40 –50 –30 –20 –10 +20 +10 –80 –40 IM3 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –50 + 5 Input Power of Each Tone Pin(each) (dBm) Output Power of Each Tone PO(each) (dBm) –20 –25 –10 –15 +10 –30 TA = +25°C f1 = 1 000 MHz f2 = 1 001 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Return Loss RLout (dB)Output Power Pout (dBm) PO(each)

Data Sheet P12549EJ3V0DS 15 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – 7.0 5.0 4.5 4.0 6.5 6.0 5.5 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) NOISE FIGURE vs. SUPPLY VOLTAGE

Data Sheet P12549EJ3V0DS16 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB –

1.66 GHz output port matching

S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 27.846 Ω –43.406 Ω MARKER 1

1.66 GHz

START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 46.598 Ω –9.8574 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS 17 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – POWER GAIN vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY –40 –30 –20 –10 +20 +10 –60 –50 0.1 0.3 1.0 3.0 Power Gain GP (dB) Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY –60 –50 –40 –30 –70 0.30.1 1.0 3.0 Isolation ISL (dB) –60 –70 –40 –50 –30 –20 –10 +20 +10 –80 –40 IM3 Input Power of Each Tone Pin(each) (dBm) –20 –25 –10 –15 0 +10 –30 Output Return Loss RLout (dB) VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 3.0 V f1 = 1 660 MHz f2 = 1 661 MHz OUTPUT POWER vs. INPUT POWER –20 –10 –15 +10 –30 –25 Output Power Pout (dBm) Input Power Pin (dBm) –15 –10 –20 Input Return Loss RLin (dB) 0.1 0.3 1.0 3.0 VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V 0.1 0.3 1.0 3.0 VCC = 2.4 V VCC = 3.3 VVCC = 3.0 V OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE Frequency f (GHz) Frequency f (GHz) Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) PO(each)

Data Sheet P12549EJ3V0DS18 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – Output Power of Each Tone P O(each) (dBm) 6.5 6.0 7.0 5.5 5.0 4.5 4.0 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) NOISE FIGURE vs. SUPPLY VOLTAGE f1 = 1 660 MHz f2 = 1 661 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc)

Data Sheet P12549EJ3V0DS 19 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB –

1.9 GHz output port matching

S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 24.725 Ω –34.01 Ω MARKER 1

1.9 GHz

START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 74.719 Ω –22.016 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS20 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – –40 –30 –20 –10 +20 +10 –60 –50 0.1 0.3 1.0 3.0 –60 –50 –40 –30 –70 0.30.1 1.0 3.0 –60 –70 –40 –50 –30 –20 –10 +20 +10 –80 –40 IM3 –20 –25 –10 –15 0 +10 –30 –20 –10 –15 +15 +10 –25 –15 –10 –20 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 VVCC = 3.0 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V POWER GAIN vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY Isolation ISL (dB) Input Power of Each Tone Pin(each) (dBm) Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) Input Return Loss RLin (dB) OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE Frequency f (GHz) Frequency f (GHz) Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) PO(each)

Data Sheet P12549EJ3V0DS 21 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8128TB – 6.5 6.0 7.0 5.5 5.0 4.5 4.0 2.0 2.5 3.0 3.5 f1 = 1 900 MHz f2 = 1 901 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V Output Power of Each Tone PO(each) (dBm) Noise Figure NF (dB) Supply Voltage VCC (V) NOISE FIGURE vs. SUPPLY VOLTAGE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc)

Data Sheet P12549EJ3V0DS22 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB S-PARAMETERS (TA = +25°° °°C, VCC = Vout = 3.0 V) – µPC8128TB – S11–Frequency 1.0 G2.0 G 3.0 G 0.1 G S22–Frequency 1.0 G 2.0 G 3.0 G 0.1 G

Data Sheet P12549EJ3V0DS 23 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB TYPICAL S-PARAMETER VALUES (TA = +25°C) µPC8128TB VCC = Vout = 3.0 V, ICC = 2.8 mA FREQUENCY S11 S21 S12 S22

Data Sheet P12549EJ3V0DS24 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – 01234 Supply Voltage VCC (V) –60 –40 –20 +20 +40 +60 +80 +1000 Circuit Current ICC (mA) Operating Ambient Temperature TA (°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE No signal VCC = 3.0 V Circuit Current ICC (mA)

Data Sheet P12549EJ3V0DS 25 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 52.156 Ω –69.48 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 32.893 Ω 16.221 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS26 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – –40 –30 –20 –10 +10 +20 –50 0.1 0.3 1.0 3.0 Power Gain GP (dB) Frequency f (GHz) Frequency f (GHz) POWER GAIN vs. FREQUENCY –40 –30 –20 –10 +10 +20 –50 0.1 0.3 1.0 3.0 –60 –50 –40 –30 –70 0.1 0.3 1.0 3.0 Isolation ISL (dB) –60 –50 –40 –30 –70 0.1 0.3 1.0 3.0 –15 –10 –20 0.1 0.3 1.0 3.0 Input Return Loss RLin (dB) –15 –10 –20 0.1 0.3 1.0 3.0 VCC = 3.0 V VCC = 3.0 V VCC = 3.0 V VCC = 3.0 V VCC = 2.4 V TA = +25°C TA = +85°C TA = +25°C TA = –40°C VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V TA = –40°C TA = –40°C TA = +25°C TA = +85°CVCC = 3.3 V TA = +85°C POWER GAIN vs. FREQUENCY Power Gain GP (dB) ISOLATION vs. FREQUENCY ISOLATION vs. FREQUENCY Frequency f (GHz) Frequency f (GHz) Isolation ISL (dB) Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB)

Data Sheet P12549EJ3V0DS 27 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – OUTPUT RETURN LOSS vs. FREQUENCY VCC = 3.0 V –20 –10 +10 –30 0.1 0.3 1.0 3.0 Output Return Loss RLout (dB) Output Return Loss RLout (dB) Frequency f (GHz) Frequency f (GHz) –20 –10 +10 –30 0.30.1 1.0 3.0 –20 –25 –10 –15 +10 –30 Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 –70 –40 –50 –30 –20 –10 +10 –80 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) –40 IM3 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –50 + 5 Input Power of Each Tone Pin(each) (dBm) –20 –25 –10 –15 +10 –30 Input Power Pin (dBm) –20 –15 –10 –50+ 5 Output Power of Each Tone PO(each) (dBm) f1 = 1 000 MHz f2 = 1 001 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V VCC = 3.0 V TA = +85°C TA = +25°C TA = –40°C VCC = 3.3 V VCC = 2.4 V OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm)3rd Order Intermodulation Distortion IM3 (dBc)PO(each)

Data Sheet P12549EJ3V0DS28 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – 7.0 5.0 4.5 6.5 7.5 6.0 5.5 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) NOISE FIGURE vs. SUPPLY VOLTAGE

Data Sheet P12549EJ3V0DS 29 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 26.748 Ω –46.359 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 49.086 Ω –23.154 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS30 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – POWER GAIN vs. FREQUENCY –40 –30 –20 –10 +20 +10 –60 –50 0.1 0.3 1.0 3.0 Power Gain GP (dB) ISOLATION vs. FREQUENCY –60 –50 –40 –20 –30 –70 0.30.1 1.0 3.0 Isolation ISL (dB) –20 –25 –10 –15 0 +10 –30 Output Return Loss RLout (dB) –15 –10 –20 Input Return Loss RLin (dB) 0.1 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 0.1 0.3 1.0 3.0 VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY –60 –70 –40 –50 –30 –20 –10 +10 –80 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power of Each Tone Pin(each) (dBm) –25 –10 –15 –20 +10 –30 Output Power Pout (dBm) Input Power Pin (dBm) VCC = 3.0 V f1 = 1 660 MHz f2 = 1 661 MHz VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V IM3 OUTPUT POWER vs. INPUT POWER OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE Frequency f (GHz) Frequency f (GHz) PO(each)

Data Sheet P12549EJ3V0DS 31 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – –20 –15 –10 –50+ 5 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO(each) (dBm) 6.5 7.5 6.0 7.0 5.5 5.0 4.5 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE NOISE FIGURE vs. SUPPLY VOLTAGE VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V f1 = 1 660 MHz f2 = 1 661 MHz

Data Sheet P12549EJ3V0DS32 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 24.301 Ω –37.246 Ω START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 64.633 Ω –35.777 Ω START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS 33 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – POWER GAIN vs. FREQUENCY –40 –30 –20 –10 +20 +10 –60 –50 0.1 0.3 1.0 3.0 Power Gain GP (dB) ISOLATION vs. FREQUENCY –60 –50 –40 –20 –30 –70 0.30.1 1.0 3.0 Isolation ISL (dB) –60 –70 –40 –50 –30 –20 –10 +10 –80 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power of Each Tone Pin(each) (dBm) –20 –25 –10 –15 0 +10 –30 Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE –25 –10 –15 –20 +10 –30 Output Power Pout (dBm) Input Power Pin (dBm) –15 –10 –20 Input Return Loss RLin (dB) 0.1 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 0.1 0.3 1.0 3.0 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 2.4 V IM3 VCC = 3.0 V VCC = 3.0 V VCC = 3.3 V VCC = 3.3 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Frequency f (GHz) PO(each)

Data Sheet P12549EJ3V0DS34 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8151TB – 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO(each) (dBm) 6.5 6.0 7.0 7.5 5.5 5.0 4.5 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE NOISE FIGURE vs. SUPPLY VOLTAGE f1 = 1 900 MHz f2 = 1 901 MHz VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V

Data Sheet P12549EJ3V0DS 35 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB S-PARAMETERS (TA = +25°° °°C, VCC = Vout = 3.0 V) – µPC8151TB – S11–Frequency 1.0 G2.0 G 3.0 G 0.1 G S22–Frequency 1.0 G 2.0 G 3.0 G 0.1 G

Data Sheet P12549EJ3V0DS36 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB TYPICAL S-PARAMETER VALUES (TA = +25°C) µPC8151TB VCC = Vout = 3.0 V, ICC = 4.2 mA FREQUENCY S11 S21 S12 S22

Data Sheet P12549EJ3V0DS 37 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – 0123 4 Circuit Current ICC (mA) Supply Voltage VCC (V) –60 –40 –20 +20 +40 +60 +80 +1000 Operating Ambient Temperature TA (°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE No signal VCC = 3.0 V Circuit Current ICC (mA)

Data Sheet P12549EJ3V0DS38 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 51.59 Ω –20.508 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 75.816 Ω –12.941 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS 39 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – –30 –20 –10 +10 +20 +30 –40 0.1 0.3 1.0 3.0 Power Gain GP (dB) Frequency f (GHz) Frequency f (GHz) POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY –30 –20 –10 +10 +20 +30 –40 0.1 0.3 1.0 3.0 –60 –50 –40 –30 –70 0.1 0.3 1.0 3.0 Isolation ISL (dB) ISOLATION vs. FREQUENCY ISOLATION vs. FREQUENCY –60 –50 –40 –30 –70 0.1 0.3 1.0 3.0 –20 –25 –15 –10 –30 0.1 0.3 1.0 3.0 Input Return Loss RLin (dB) INPUT RETURN LOSS vs. FREQUENCY –25 –20 –10 –15 –30 0.1 0.3 1.0 3.0 VCC = 3.0 V VCC = 3.0 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V TA = +85°C TA = +25°C TA = –40°C TA = +85°C VCC = 3.3 V VCC = 3.0 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V TA = +85°C TA = +25°C TA = –40°C TA = –40°C TA = +25°C Power Gain GP (dB)Isolation ISL (dB) Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Frequency f (GHz) Input Return Loss RLin (dB)

Data Sheet P12549EJ3V0DS40 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY VCC = 3.0 V –20 –10 +10 –30 0.1 0.3 1.0 3.0 Output Return Loss RLout (dB) Frequency f (GHz) Frequency f (GHz) –20 –10 +10 –30 0.30.1 1.0 3.0 –20 –10 –15 –25 Output Power Pout (dBm) Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 –70 –40 –50 –30 –20 –10 +20 +10 –80 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) –40 IM3 Input Power of Each Tone Pin(each) (dBm) –20 –25 –10 –15 Output Power of Each Tone PO(each) (dBm) VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V TA = –40°C TA = +25°C TA = +85°C TA = +85°C TA = +25°C TA = –40°C VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 2.4 V Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm)3rd Order Intermodulation Distortion IM3 (dBc) PO(each)

Data Sheet P12549EJ3V0DS 41 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – 5.5 3.5 3.0 2.5 5.0 4.5 4.0 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) NOISE FIGURE vs. SUPPLY VOLTAGE

Data Sheet P12549EJ3V0DS42 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 98.301 Ω –25.836 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 22.714 Ω 10.238 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS 43 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – POWER GAIN vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY –40 –30 –20 –10 +20 +30 +10 –50 0.1 0.3 1.0 3.0 Power Gain GP (dB) Frequency f (GHz) Frequency f (GHz) –60 –50 –40 –30 –70 0.30.1 1.0 3.0 Isolation ISL (dB) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE –60 –70 –40 –50 –30 –20 –10 +20 +10 –80 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power of Each Tone Pin(each) (dBm) OUTPUT RETURN LOSS vs. FREQUENCY –20 –10 0 +10 –30 Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER –25 –10 –15 –20 Output Power Pout (dBm) Input Power Pin (dBm) –40 –30 –20 –10 –50 Input Return Loss RLin (dB) VCC = 3.0 V f1 = 1 660 MHz f2 = 1 661 MHz IM3 VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 3.0 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 3.3 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V ISOLATION vs. FREQUENCY Frequency f (GHz) Frequency f (GHz) PO(each)

Data Sheet P12549EJ3V0DS44 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO(each) (dBm) 5.0 4.5 5.5 4.0 3.5 3.0 2.5 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE NOISE FIGURE vs. SUPPLY VOLTAGE VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V f1 = 1 660 MHz f2 = 1 661 MHz

Data Sheet P12549EJ3V0DS 45 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – S-PARAMETERS (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V S11 REF 1.0 Units 1 200.0 mUnits/ 85.828 Ω 11.969 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz S22 REF 1.0 Units 1 200.0 mUnits/ 62.398 Ω 55.551 Ω MARKER 1 START 0.100000000 GHz STOP 3.100000000 GHz

Data Sheet P12549EJ3V0DS46 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – POWER GAIN vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY –40 –30 –20 –10 +20 +30 +10 –50 0.1 0.3 1.0 3.0 Power Gain GP (dB) ISOLATION vs. FREQUENCY –60 –50 –40 –20 –10 –30 –70 0.30.1 1.0 3.0 Isolation ISL (dB) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE –60 –70 –40 –50 –30 –20 –10 +20 +10 –80 Output Power of Each Tone Po(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power of Each Tone Pin(each) (dBm) OUTPUT RETURN LOSS vs. FREQUENCY –20 –10 0 +10 –30 Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER –25 –10 –15 –20 –30 Output Power Pout (dBm) Input Power Pin (dBm) –40 –30 –20 –10 –50 Input Return Loss RLin (dB) Frequency f (GHz)Frequency f (GHz) IM3 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz VCC = 2.4 V VCC = 3.3 V VCC = 3.0 V VCC = 3.0 V VCC = 2.4 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V VCC = 3.3 V Frequency f (GHz)Frequency f (GHz) PO(each)

Data Sheet P12549EJ3V0DS 47 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB – µPC8152TB – 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO(each) (dBm) 5.0 4.5 5.5 4.0 3.5 3.0 2.5 2.0 2.5 3.0 3.5 Noise Figure NF (dB) Supply Voltage VCC (V) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE NOISE FIGURE vs. SUPPLY VOLTAGE VCC = 3.3 V VCC = 3.0 V VCC = 2.4 V f1 = 1 900 MHz f2 = 1 901 MHz Remark The graphs indicate nominal characteristics.

Data Sheet P12549EJ3V0DS48 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB S-PARAMETERS (TA = +25°° °°C, VCC = Vout = 3.0 V) – µPC8152TB – S11–Frequency 1.0 G 2.0 G 3.0 G0.1 G S22–Frequency 1.0 G2.0 G 3.0 G 0.1 G

Data Sheet P12549EJ3V0DS 49 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB TYPICAL S-PARAMETER VALUES (TA = +25°C) µPC8152TB VCC = Vout = 3.0 V, ICC = 5.6 mA FREQUENCY S11 S21 S12 S22

Data Sheet P12549EJ3V0DS50 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 2.0±0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1±0.1 1.25±0.1 0.1 MIN.

Data Sheet P12549EJ3V0DS 51 µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to V CC line. (4) The inductor (L) should be attached between output and V CC pins. The L and series capacitor (C2) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260° C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300 °C or below Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

µµ µµPC8128TB, µµ µµPC8151TB, µµ µµPC8152TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. M8E 00. 4 The information in this document is current as of February, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).

Summary

BIPOLAR ANALOG INTEGRATED CIRCUITS 2001

Description