UPC8128TA-E3

UPC8128TA NEC | Alldatasheet

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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUITS PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES Document No. P14637EJ1V0DS00 (1st edition) Date Published April 2000 N CP(K) Printed in Japan PRELIMINARY DATA SHEET 2000©

DESCRIPTION

The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current amplifiers operate on 3.0 V. These ICs are manufactured using NEC’s 20 GHz f T NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES

• Low current consumption : PPC8128TA ; I CC = 2.8 mA TYP. @ VCC = 3.0 V PPC8151TA ; I CC = 4.2 mA TYP. @ VCC = 3.0 V PPC8152TA ; I CC = 5.6 mA TYP. @ VCC = 3.0 V
• Supply voltage : V CC = 2.4 to 3.3 V
• High efficiency : PPC8128TA ; P O (1 dB) = ð4.0 dBm TYP. @ f = 1 GHz PPC8151TA ; P O (1 dB) = +2.5 dBm TYP. @ f = 1 GHz PPC8152TA ; P O (1 dB) = ð4.5 dBm TYP. @ f = 1 GHz
• Power gain variation : PPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz PPC8152TA ; G P = 23.0 dB TYP. @ f = 1 GHz
• Operating frequency : 100 to 1 900 MHz (Output port LC matching)
• Excellent isolation : PPC8128TA ; ISL = 39 dB TYP. @ f = 1 GHz : PPC8151TA ; ISL = 38 dB TYP. @ f = 1 GHz : PPC8152TA ; ISL = 40 dB TYP. @ f = 1 GHz APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones

Preliminary Data Sheet P14637EJ1V0DS002 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA

ORDERING INFORMATION

Part Number Package Marking Feature Supplying Form PPC8128TA-E3 C2P 2.8 mA Low I CC PPC8151TA-E3 C2U 4 mA High P O PPC8152TA-E3 6-pin minimold C2V 5 mA High G P Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: PPC8128TA, PPC8151TA, PPC8152TA) PIN CONNECTIONS Pin No. Pin Name

1 INPUT

(Top View) Marking is an example of PC8128TAµ (Bottom View)

Preliminary Data Sheet P14637EJ1V0DS00 3 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA PRODUCT LINE-UP (TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 ::::) Parameter I CC 1.00 GHz output port matching frequency

1.66 GHz output port

1.90 GHz output port

Part No. (mA) G P (dB) ISL (dB) PO (1 dB) (dB) G P (dB) ISL (dB) PO (1 dB) (dB) G P (dB) ISL (dB) PO (1 dB) (dB) PPC8128TB 6-pin super minimold PPC8151TB 6-pin super minimold PPC8152TB 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE Location examples in digital cellular RX Low Noise Tr. SW TX ÷N PLL PLL I Q I Q DEMOD. 90°PA φ These ICs can be added to your system around ▲ parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. Marking

Preliminary Data Sheet P14637EJ1V0DS004 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT ð 0.9 1.06 0.80 Signal input pin. A internal matching circuit, configured with resistors, enables 50 : connec- tion over a wide band. This pin must be coupled to signal source with capacitor for DC cut. GND 0 ð Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be con- nected together with wide ground pattern to decrease impedance defference.

4 OUTPUT voltage

ð Signal output pin. This pin is de- signed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1005 chip in-ductor can be chosen. 6V CC 2.4 to 3.3 ð Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its inpedance. 23 5 PC8152TA 2 5 3 PC8128TA, PC8151TAµµ µ Note Pin voltage is measured at VCC = 3.0 V. Above: PPC8128TA, Center: PPC8151TA, Below: PPC8152TA

Preliminary Data Sheet P14637EJ1V0DS00 5 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25 °C, Pin 4, Pin 6 3.6 V Total Circuit Current I CC TA = +25 °C 15 mA Total Power Dissipation P D Mounted on double sided copper clad 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C) 280 mW Operating Ambient Temperature TA ð40 to +85 °C Storage Temperature T stg ð55 to +150 °C Input Power P in TA = +25 °C +5 dBm RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage V CC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA ð40 +25 +85 °C Operating Frequency f 0.1 ð 1.9 GHz Matched output port with external LC

Preliminary Data Sheet P14637EJ1V0DS006 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 ::::, at LC matched frequency) PPC8128TA PPC8151TA PPC8152TA Parameter Symbol Test Unit Power Gain G P f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 9.5 12.5 14.5 9.5 12.5 14.5 16.5 14.5 19.5 17.5 21.5 19.5 dB Isolation ISL f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz ð ð ð ð ð ð ð ð ð dB Gain 1 dB Compression Output Power P O (1 dB) f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz ð7.5 ð8.5 ð8.5 ð4.0 ð4.0 ð4.0 ð ð ð ð1.0 ð2.5 ð3.0 +2.5 +1.5 +0.5 ð ð ð ð7.5 ð11.5 ð11.5 ð4.5 ð8.5 ð8.5 ð ð ð dBm Saturated Output Power Note (Pin = ð6 dBm) PO (sat) f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz ð ð ð ð ð ð ð ð ð ð ð ð ð ð ð ð ð ð ð2.5 ð5.5 ð6.0 +0.5 ð2.5 ð3.0 ð ð ð dBm Noise Figure NF f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz ð ð ð 6.0 6.0 6.0 7.5 7.5 7.5 ð ð ð 6.0 6.0 6.0 7.5 7.5 7.5 ð ð ð 3.5 4.0 4.5 5.0 5.5 6.0 dB Input Return Loss (Without matching circuit) RL in f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 2.5 5.5 ð ð ð ð ð ð 8.5 7.5 8.5 11.5 10.5 11.5 ð ð ð dB Note Saturated output power is specified only in PPC8152TA which has flat saturated region. STANDARD CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 ::::, at LC matched frequency) Reference Value Parameter Symbol Conditions PPC8128TA PPC8151TA PPC8152TA Unit Output Return Loss (With external matching circuit) RL out f = 1.00 GHz f = 1.66 GHz f = 1.90 GHz 7.5 dB 3rd Order Intermodulation Distortion õ32õHDFKô ðëíG%Pô IM3 f1 = 1.000 GHz, f2 = 1.001 GHz f1 = 1.660 GHz, f2 = 1.661 GHz f1 = 1.900 GHz, f2 = 1.901 GHz ð50 ð46 ð46 ð62 ð56 ð54 ð51 ð43 ð42 dBc

Preliminary Data Sheet P14637EJ1V0DS00 7 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA TEST CIRCUIT IN OUT 50 Ω 2,3,5 150 Ω C 1 C 2 C 3 VCC C 4 Output port matching circuit C 5 C 6C 7

Preliminary Data Sheet P14637EJ1V0DS008 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD PPPPPC8128TA/ PPPPPC8151TA OUT IN PC8128/ 51/52TA Top View Mounting direction connector connector (Marking is an example for PC8128TA)µ µ C2P C1 COMPONENT LIST 1.00 GHz output port matching 1.66 GHz output port matching 1.90 GHz output port matching C1, C3 to C6 1 000 pF 1 000 pF 1 000 pF C2 1.0 pF 0.75 pF 0.75 pF L1 8.2 nH 3.3 nH 2.7 nH

Preliminary Data Sheet P14637EJ1V0DS00 9 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA PPPPPC8152TA C2V Top View Mounting direction OUT IN PC8128/ 51/52TA µ connector connector COMPONENT LIST 1.00 GHz output port matching 1.66 GHz output port matching 1.90 GHz output port matching C1, C3 to C7 1 000 pF 1 000 pF 1 000 pF C2 1.5 pF 1.0 pF 1.5 pF L1 8.2 nH 2.7 nH 1.8 nH NOTES ( PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA in common) 1. 42 u 35 u 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes

Preliminary Data Sheet P14637EJ1V0DS0010 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA EXAMPLE OF APPLICATION CIRCUIT (PPPPPC8128TA, PPPPPC8151TA) In improving RLin of PPC8128TA and PPC8151TA at 1.0 GHz, L2 should be attached. IN OUT 50 Ω 2,3,5 150 Ω C 1 L2 C 2 C 3 VCC Output port maching circuit In improving RLin of PPC8128TA and PPC8151TA at 1.66 to 1.9 GHz, C’ should be attached. IN OUT 50 Ω 2,3,5 150 Ω C 1 C 2 C 3 VCC Output port matching circuit

Preliminary Data Sheet P14637EJ1V0DS00 11 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA PACKAGE DIMENSIONS

6 PIN MINIMOLD (UNIT: mm)

0.13–0.10.3 +0.1 –0.05 0.8 1.1 +0.2 –0.1 0 to 0.1 123 65 4 1.9 2.9–0.2 0.950.95 1.5 +0.2 –0.1 2.8 +0.2 –0.3

Preliminary Data Sheet P14637EJ1V0DS0012 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C2) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200 °C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E) .

Preliminary Data Sheet P14637EJ1V0DS00 13 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA [MEMO]

Preliminary Data Sheet P14637EJ1V0DS0014 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA [MEMO]

Preliminary Data Sheet P14637EJ1V0DS00 15 PPPPPC8128TA, PPPPPC8151TA, PPPPPC8152TA [MEMO]

PPPPPC8128TA , PPPPPC8151TA , PPPPPC8152TA ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

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• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
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