UPC8119T RENESAS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 52

Technical content

Datasheet sections

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

  1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing th e information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products ar e classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: Computers; office equipmen t; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti- crime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics pr oducts described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesa s Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesa s Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority- owned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8119T, µPC8120T The mark  shows major revised points.  NEC Compound Semiconductor Devices 1996, 2003 Document No. PU10413EJ01V0DS (1st edition) (Previous No. P11027EJ2V0DS00) Date Published October 2003 CP(K) Printed in Japan

DESCRIPTION

The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.92 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wit h system design. 3 V supply voltage and mini mold package contribute to make system lower voltage, decreased space and fewer components. The µPC8119T and µPC8120T are manufactured using our 20 GHz fT NESAT III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion / migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

  • Recommended operating frequency : f = 100 MHz to 1.92 GHz  Supply voltage : V CC = 2.7 to 3.3 V  Low current consumption : I CC = 11 mA TYP. @ VCC = 3.0 V  Gain control voltage : V AGC = 0.6 to 2.4 V (recommended)  Two types of gain control : µPC8119T ; VAGC up vs. Gain down (Forward control)  : µPC8120T ; VAGC up vs. Gain up (Reverse control)  AGC control can be constructed by external control circuit  High-density surface mounti ng : 6-pin minimold package

APPLICATIONS

 1.9 GHz cordless telephone (PHS base-station and so on)  800 MHz to 900 MHz or 1.5 GHz Digital cellular telephone (PDC 800 MHz, PDC 1.5 GHz and so on)

ORDERING INFORMATION

Part Number Package Marking Supplying Form V AGC up vs. Gain µPC8119T-E3 6-pin minimold C2M down µPC8120T-E3 C2N

  • Embossed tape 8 mm wide
  • 1, 2, 3 pins face to perforation side of the tape
  • Qty 3 kpcs/reel up Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8119T, µPC8120T

Data Sheet PU10413EJ01V0DS 2 µPC8119T,µPC8120T PIN CONNECTIONS Pin No. Pin Name

1 INPUT

2 GND

3 GND

4 OUTPUT

5 V CC

(Top View) C2M (Bottom View) Marking is an example for µPC8119T 6 V AGC SYSTEM APPLICATION EXAMPLE EXAMPLE OF PHS ÷N PLL DEMOD. SW Phase Shifter PLL Low Noise Tr. RX TX PC8119T or PC8120T µ µ PA I Q I Q 90˚ To know the associated product, please refer to each latest data sheet.

Data Sheet PU10413EJ01V0DS 4 µPC8119T,µPC8120T 1. PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Inte rnal Equivalent Circuit 1 IN – 1.2 RF input pin. This pin should be coupled with capacitor (example: 1 000 pF) for DC cut. This pin can be input from 50 Ω impedance signal source without matching circuit. GND 0 – Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible.

4 OUT Voltage as same

– RF output pin. This pin is designed as open collector of high impedance. This pin must be externally equipped with matching circuits. Bias circuit Control circuit 5 V CC 2.7 to 3.3 – Supply voltage pin. This pin must be externally equipped with low pass filter (example: π type) in order to suppress leakage from input pin. This pin also must be equipped with bypass capacitor (example: 1 000 pF) to minimize ground impedance. 6 V AGC 0 to 3.3 – Gain control pin. The relation between product number and control performance is shown below; Please insert feed back capacitor between V CC pin. Control circuit Note Pin voltage is measured at V CC = 3.0 V Part No. V AGC up vs. Gain µPC8119T down µPC8120T up

Data Sheet PU10413EJ01V0DS 5 µPC8119T,µPC8120T 2. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC T A = +25°C, Pin 4 and 5 3.6 V Total Circuit Current I CC 30 mA Gain Control Voltage V AGC T A = +25°C 3.6 V Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Power Dissipation P D T A = +85°C Note 280 mW Input Power P in +10 dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB 3. RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage V CC 2.7 3.0 3.3 V Same voltage should be applied to 4 and 5 pins. Gain Control Voltage V AGC 0.6 − 2.4 V I AGC ≤ 0.1 mA Note 1 Input Power P in − − −10 dBm Padj ≤ −60 dBc @ ∆f = ±600 kHz Note 2 Operating Ambient Temperature T A −40 +25 +85 °C Operating Frequency f 100 − 1 920 MHz With external output-matching Gain Control Current I AGC 0.5 − − mA V AGC ≤ 3.3 V Notes 1. Adjacent Channel Power Leakage (P adj) wave form condition: f = 950 MHz or 1 440 MHz, π/4QPSK modulation signal, data rate = 42 kbps, rolloff ratio = 0.5, PN9 bits (pseudo random pattern) 2. Adjacent Channel Power Leakage (P adj) wave form condition: f = 1 900 MHz, π/4QPSK modulation signal, data rate = 384 kbps, rolloff ratio = 0.5, PN9 bits (pseudo random pattern)

Data Sheet PU10413EJ01V0DS 6 µPC8119T,µPC8120T 4. ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 3.0 V, Zs = ZL = 50 Ω, External matched output port) µPC8119T µPC8120T Parameter Symbol Test Conditions Unit Circuit Current I CC No signal, I CC = IVCC + Iout 7.5 11 15 7.5 11 15 mA Maximum Power Gain G PMAX f = 950 MHz, P in = −30 dBm f = 1 440 MHz, Pin = −30 dBm 12.5 10.5 10.5 13.5 15.5 16.5 dB Gain Control Range Note GCR f = 950 MHz, P in = −30 dBm f = 1 440 MHz, Pin = −30 dBm − dB Noise Figure NF f = 950 MHz, G PMAX f = 1 440 MHz, GPMAX 8.5 7.5 11.5 10.5 9.0 7.5 10.5 dB Isolation ISL f = 950 MHz, G PMAX f = 1 440 MHz, GPMAX dB Input Return Loss RL in f = 950 MHz, G PMAX f = 1 440 MHz, GPMAX dB Gain 1 dB Compression Output Power P O (1 dB) f = 950 MHz, G PMAX f = 1 440 MHz, GPMAX +1.0 +0.5 +3.5 dBm Note Gain Control Range (GCR) specification: GCR = GPMAX − GPMIN (dB) Conditions µPC8119T: GPMAX @ VAGC = 0 V, GPMIN @ VAGC = VCC µPC8120T: GPMAX @ VAGC = VCC, GPMIN @ VAGC = 0 V Remark Measured on Test circuit 1 and 2 5. STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, VCC = Vout = 3.0 V, Zs = ZL = 50 Ω, External matched output port) Reference Value Parameter Sym bol Test Conditions µPC8119T µPC8120T Unit Maximum Power Gain G PMAX f = 1 900 MHz, P in = −30 dBm 12.5 13 dB Gain Control Range Note GCR f = 1 900 MHz, P in = −30 dBm 22 22 dB Noise Figure NF f = 1 900 MHz, G PMAX 7.2 7.3 dB Gain 1 dB Compression Output Power P O (1 dB) f = 1 900 MHz, G PMAX +3.0 +2.5 dBm Note Gain Control Range (GCR) specification: GCR = GPMAX − GPMIN (dB) Conditions µPC8119T: GPMAX @ VAGC = 0 V, GPMIN @ VAGC = VCC µPC8120T: GPMAX @ VAGC = VCC, GPMIN @ VAGC = 0 V Remark Measured on Test circuit 3

Data Sheet PU10413EJ01V0DS 7 µPC8119T,µPC8120T 6. TEST CIRCUIT 6. 1 f = 950 MHz, Both Products in Common 6. 1. 1 Test circuit 1 VAGC IN 1 000 pF 1 pF 1 000 pF 1 000 pF 1 000 pF VCC 1 000 pF 1 000 pF C5C3 OUT L1 5 nH Strip line Output matching circuit VCC line low pass filter 2, 3 6. 1. 2 Illustration of the test circuit 1 assembled on evaluation board VAGC IN VCC OUT C6C4 C7L1 C5C3 TYPE1 OUT IN VAGC PC8119/20Tµ 6. 1. 3 Component list Form Symbol Value C1, C3 to C7 1 000 pF Chip capacitor C2 1 pF Note 1 Chip inductor L1 5 nH (10 nH × 2 pcs parallel ) Note 2 Jumper wire L2 5 nH Notes 1. 1 pF : Murata Mfg. Co., Ltd. GR40CK010C 2. 10 nH : Murata Mfg. Co., Ltd. LQP31A10NG04

Data Sheet PU10413EJ01V0DS 8 µPC8119T,µPC8120T 6. 2 f = 1 440 MHz, Both Products in Common 6. 2. 1 Test circuit 2 VAGC IN 1 000 pF 1 pF 1 000 pF 1 000 pF 1 000 pF VCC 1 000 pF 1 000 pF C5C3 OUT L1 2 nH Strip line Output matching circuit VCC line low pass filter 2, 3 6. 2. 2 Illustration of the test circuit 2 assembled on evaluation board TYPE2 VAGC VCC OUT IN PC8119/20Tµ OUT VAGC GND VCC IN This puttern is cut. (Monitor of VCC pin) 6. 2. 3 Component list Form Symbol Value C1, C3 to C7 1 000 pF Chip capacitor C2 1 pF Note 1 Chip inductor L1 2 nH (4.7 nH + 6.8 nH × 2 pcs parallel ) Note 2 Printed on board L2 5 nH Notes 1. 1 pF : Murata Mfg. Co., Ltd. GR40CK010C 6.8 nH : Murata Mfg. Co., Ltd. LQP31A6N8J04

Data Sheet PU10413EJ01V0DS 9 µPC8119T,µPC8120T 6. 3 f = 1 900 MHz, Both Products in Common 6. 3. 1 Test circuit 3 VAGC IN 1 000 pF 1 000 pF 1 000 pF 1 000 pF VCC 1 000 pF 1 000 pF C5C3 1 000 pF 2 to 2.5 pF OUT L1 100 nH Strip line Output matching circuit VCC line low pass filter 2, 3 6. 3. 2 Illustration of the test circuit 3 assembled on evaluation board VAGC GND IN VCC OUT C2 C8 C6C4 C7L1 C5C3 TYPE1 OUT IN VAGC PC8119/20Tµ 6. 3. 3 Component list Form Symbol Value C1 to C7 1 000 pF Chip capacitor C8 2 to 2.5 pF Note 1 Chip inductor L1 100 nH Note 2 Jumper wire L2 5 nH Note 100 nH : Murata Mfg. Co., Ltd. LQP31A100NG04

Data Sheet PU10413EJ01V0DS 10 µPC8119T,µPC8120T Caution Test circuit or print pattern in th is sheet is for testing IC characteristics. In the case of actual system application, external circuits including print pattern and matching circuit constant of output port should be designed in accordance with IC’s S parameters and environmental components. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Remark For the usage and application of µPC8119T and µPC8120T, please refer to the application note (Document No. P12763E).

Data Sheet PU10413EJ01V0DS 11 µPC8119T,µPC8120T 7. TYPICAL CHARACTERISTICS (T A = +25°C, unless otherwise specified) 7. 1 µPC8119T No signals VCC = Vout OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. Circuit Current ICC (mA) Operating Ambient Temperature TA (˚C) 0–50 –25 0 25 50 75 100 No signals VCC = Vout 3.0 V 2.7 V VCC = 3.3 V vs. GAIN CONTROL VOLTAGE OUTPUT CURRENT, CIRCUIT CURRENT Circuit Current ICC (mA) Output Current Iout (mA) Gain Control Voltage VAGC (V) VCC = 3.3 V 3.0 V 2.7 V VCC = 3.3 V 3.0 V 2.7 V No signals VCC = Vout ICC Iout 0 1234 Supply Voltage V CC (V) Circuit Current ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signals VCC = Vout 150 125 100 Gain Control Voltage V AGC (V) GAIN CONTROL VOLTAGE GAIN CONTROL CURRENT vs. Gain Control Current IAGC ( A)µ VCC = 2.7 V 3.0 V 3.3 V START 100.000 000 MHz STOP 3 100.000 000 MHz S11–FREQUENCY VCC = Vout = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm : 900 MHz 52.545 Ω – 39.801 Ω : 1 500 MHz 33.402 Ω – 32.457 Ω : 1 900 MHz 27.989 Ω – 24.408 Ω 3 1 START 100.000 000 MHz STOP 3 100.000 000 MHz S22–FREQUENCY VCC = Vout = 3.0 V, VAGC = 0 V (GPMAX) : 900 MHz 36.039 Ω – 190.09 Ω : 1 500 MHz 39.668 Ω – 125.84 Ω : 1 900 MHz 34.668 Ω – 106.88 Ω Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 12 µPC8119T,µPC8120T 7. 1. 1 Output port matching at f = 950 MHz −µPC8119T− VCC = 2.7 V 3.0 V 3.3 V 950.000 000 MHz S22–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –15.889 dB +25˚C +85˚C TA = –40˚C 950.000 000 MHz S22–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –15.858 dB START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = Vout = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm S11–FREQUENCY 1; 39.367 Ω –52.375 Ω 3.1987 pF 950.000 000 MHz MARKER 1

950 MHz

START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = Vout = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm S22–FREQUENCY 1; 59.756 Ω –11.957 Ω 14.011 pF 950.000 000 MHz MARKER 1 950.000 000 MHz S11–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.1221 dB 3.3 V VCC = 2.7 V 3.0 V +85˚C +25˚C TA = –40˚C 950.000 000 MHz S11–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –5.8713 dB Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 13 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8119T− 950.000 000 MHz S12–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –31.911 dB 1 VCC = 3.3 V 3.0 V 2.7 V 950.000 000 MHz S21–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 6 dB 1: 12.738 dB VCC = 3.3 V 3.0 V 2.7 V 950.000 000 MHz S12–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –32.053 dB

1 TA = –40˚C

+25˚C +85˚C 950.000 000 MHz S21–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 6 dB 1: 12.854 dB TA = –40˚C +25˚C +85˚C Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 14 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8119T− 3.0 to 2.4 V 0 to 0.7 V VAGC = 1.4 V 950.000 000 MHz S22–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –15.219 dB POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –50 –40 –30 –20 –10 TA = +75˚C +25˚C –25˚C +25˚C –25˚C +75˚C 950.000 000 MHz S11–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –5.7199 dB VAGC = 3.0 to 2.0 V 1.8 V 1.6 V 1.4 V 1.2 V 1.0 V 0 to 0.7 V 950.000 000 MHz S21–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 5 dB/ REF 0 dB 1: 12.926 dB 2.0 V VAGC = 2.1 V 1.2 V 1.4 V 1.6 V 1.7 V 1.8 V 1.9 V 0 V 0.9 V 1.0 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –50 –40 –30 –20 –10 VCC = 3.3 V 3.0 V 2.7 V 950.000 000 MHz S12–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –32.063 dB

1 VAGC = 0 V

3.0 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 15 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8119T− f = 950 MHz VAGC = 0 V –15 –10 –20 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.3 V 3.0 V 2.7 V f = 950 MHz VCC = 3.0 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.60 V 1.85 V 2.00 V 2.15 V f = 950 MHz VCC = 3.3 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.6 V 1.9 V 2.05 V 2.2 V 3.3 V f = 950 MHz VCC = 2.7 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.55 V 1.8 V 1.95 V 2.1 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 16 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8119T− VCC = 3.0 V VAGC = 0 V (GPMAX) f1 = 950 MHz f2 = 951 MHz 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 1.6 V (GP ≈ 0 dB) f1 = 950 MHz f2 = 951 MHz 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 1.85 V (GP ≈ –10 dB) f1 = 950 MHz f2 = 951 MHz 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 2.0 V (GP ≈ –20 dB) f1 = 950 MHz f2 = 951 MHz 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 2.15 V (GP ≈ –30 dB) f1 = 950 MHz f2 = 951 MHz 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 2.3 V (GP ≈ –40 dB) f1 = 950 MHz f2 = 951 MHz 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 17 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8119T− VCC = 3.3 V VAGC = 0 V (GPMAX) f1 = 950 MHz f2 = 951 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 VCC = 2.7 V VAGC = 0 V (GPMAX) f1 = 950 MHz f2 = 951 MHz Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER –60 –50 –40 –30 –20 –10 –70 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 f = 950 MHz VAGC = 0 V (GPMAX)–30 –20 –70 –60 –50 –40 –80 Input Power Pin (dBm) Adjacent Channel Power Leakage Padj (dBc) vs. INPUT POWER ADJACENT CHANNEL POWER LEAKAGE VCC = 2.7 V ±50 kHz

3.0 V ±50 kHz

3.3 V ±50 kHz

2.7 V ±100 kHz

3.0 V ±100 kHz

3.3 V ±100 kHz

f = 950 MHz V CC = 3.0 V–50 –45 –70 –65 –60 –55 –75 Gain Control Voltage VAGC (V) Adjacent Channel Power Leakage Padj (dBc) vs. GAIN CONTROL VOLTAGE ADJACENT CHANNEL POWER LEAKAGE Pin = –17.4 dBm ±50 kHz –19.4 dBm ±50 kHz –17.4 dBm ±100 kHz –19.4 dBm ±100 kHz Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 18 µPC8119T,µPC8120T 7. 1. 2 Output port matching at f = 1 440 MHz −µPC8119T− 1 440.000 000 MHzMARKER 1

1.44 GHz

S22–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –17.51 dB VCC = 3.3 V 3.0 V 2.7 V 1 440.000 000 MHzMARKER 1 S11–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.1588 dB 3.0 V 3.3 V VCC = 2.7 V 1 440.000 000 MHzMARKER 1 S11–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.2593 dB +25˚C –40˚C TA = +85˚C START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm S11–FREQUENCY 1; 36.172 Ω –45.977 Ω 2.4039 pF 1 440.000 000 MHz MARKER 1 START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm S22–FREQUENCY 1; 48.932 Ω –13.582 Ω 8.1375 pF 1 440.000 000 MHz MARKER 1 1 440.000 000 MHzMARKER 1 S22–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –16.978 dB TA = +85˚C +25˚C –40˚C Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 19 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8119T− 1 440.000 000 MHz S21–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 6 dB 1: 13.355 dB MARKER 1 VCC = 3.3 V 3.0 V 2.7 V 1 440.000 000 MHz S12–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –36.039 dB –10 –50 –40 –30 –20 MARKER 1 TA = +85˚C +25˚C –40˚C 1 440.000 000 MHz S12–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –35.55 dB –10 –50 –40 –30 –20 MARKER 1 VCC = 3.3 V 3.0 V 2.7 V 1 440.000 000 MHz S21–FREQUENCY VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 6 dB 1: –13.23 dB MARKER 1 +25˚C +85˚C Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 20 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8119T− POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –50 –40 –30 –20 –10 VCC = 3.3 V 3.0 V 2.7 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –50 –40 –30 –20 –10 TA = +75˚C –25˚C +25˚C +75˚C –25˚C +25˚C 1 440.000 000 MHz S22–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –17.471 dB 2.0 to 3.0 V 0 to 0.7 V VAGC = 1.3 V 1.8 V 1 440.000 000 MHz S21–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 5 dB/ REF 0 dB 1: 13.362 dB 2.1 V VAGC = 2.2 V 0 to 0.6 V 0.9 V 1.0 V 1.2 V 1.4 V 1.6 V 1.8 V 1.9 V 2.0 V 1 440.000 000 MHz S12–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –35.661 dB VAGC = 0 V 3.0 V1 1 440.000 000 MHz S11–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.1536 dB VAGC = 3.0 to 2.0 V 1.8 V 1.6 V 1.4 V 1.2 V 1.0 V 0 to 0.7 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 21 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8119T− f = 1 440 MHz VAGC = 0 V –15 –10 –20 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.3 V 3.0 V 2.7 V f = 1 440 MHz VCC = 3.0 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.6 V 1.85 V 2.0 V 2.75 V 3.0 V f = 1 440 MHz VCC = 3.3 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 2.05 V 2.2 V 3.3 V VAGC = 0 V 1.7 V 1.9 V f = 1 440 MHz VCC = 2.7 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.6 V 1.8 V 1.95 V 2.1 V 2.7 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 22 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8119T− VCC = 3.0 V VAGC = 0 V (GPMAX) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.65 V (GP ≈ 0 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.85 V (GP ≈ –10 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 VCC = 3.0 V VAGC = 2.0 V (GP ≈ –20 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 VCC = 3.0 V VAGC = 2.2 V (GP ≈ –30 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 23 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8119T− VCC = 3.3 V VAGC = 0 V (GPMAX) f1 = 1440 MHz f2 = 1441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 VCC = 2.7 V VAGC = 0 V (GPMAX) f1 = 1 440 MHz f2 = 1 441 MHz Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER –60 –50 –40 –30 –20 –10 –70 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 f = 1 440 MHz VAGC = 0 V (GPMAX)–30 –20 –70 –60 –50 –40 –80 Input Power Pin (dBm) Adjacent Channel Power Leakage Padj (dBc) vs. INPUT POWER ADJACENT CHANNEL POWER LEAKAGE VCC = 2.7 V ±50 kHz f = 1 440 MHz V CC = 3.0 V–50 –45 –70 –65 –60 –55 –75 Gain Control Voltage VAGC (V) Adjacent Channel Power Leakage Padj (dBc) vs. GAIN CONTROL VOLTAGE ADJACENT CHANNEL POWER LEAKAGE Pin = –17.4 dBm ±50 kHz –19.4 dBm ±50 kHz –17.4 dBm ±100 kHz –19.4 dBm ±100 kHz Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 24 µPC8119T,µPC8120T 7. 1. 3 Output port matching at f = 1 900 MHz −µPC8119T− START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm S11–FREQUENCY 1; 25.644 Ω –28.377 Ω 2.9519 pF 1 900.000 000 MHz MARKER 1

1.9 GHz

START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 0 V (GPMAX), Pin = –30 dBm S22–FREQUENCY 1; 43.631 Ω 8.0605 Ω 675.2 pH 1 900.000 000 MHz MARKER 1 1 900.000 000 MHz S11–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.8063 dB 3.3 V VCC = 2.7 V 3.0 V 1 900.000 000 MHz S21–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 7 dB 1: 12.887 dB VCC = 3.3 V 3.0 V 2.7 V 1 900.000 000 MHz S22–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –20.108 dB 1 VCC = 3.3 V 3.0 V 2.7 V 1 900.000 000 MHz S12–FREQUENCY VAGC = 0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –37.473 dB VCC = 3.3 V 3.0 V 2.7 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 25 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8119T− POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –10 3.0 V 2.7 V VCC = 3.3 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –10 TA = +75˚C –25˚C +25˚C +75˚C +25˚C –25˚C MARKER 1 S21–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 5 dB/ REF –10 dB 1: 13.038 dB 1.0 V 1.4 V 1.7 V 2.0 V 3.0 V VAGC = 0 V MARKER 1 S12–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF –25 dB 1: –38.732 dB 0 V VAGC = 3.0 V MARKER 1 S22–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 10 dB 1: –18.194 dB VAGC = 1.4 V 3.0 V 1.8 V 0 V MARKER 1 S11–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF –10 dB 1: –6.025 dB VAGC = 3.0 V 1.6 V 1.4 V 0 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 26 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8119T− f = 1 900 MHz VAGC = 0 V –15 –10 –20 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.3 V 3.0 V 2.7 V f = 1 900 MHz V CC = 3.3 V5 –40 –30 –35 –20 –25 –10 –15 –45 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.4 V 1.7 V 1.85 V 2.0 V 3.3 V f = 1 900 MHz V CC = 2.7 V5 –40 –30 –35 –20 –25 –10 –15 –45 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.4 V 1.6 V 1.75 V 1.9 V 2.7 V f = 1 900 MHz V CC = 3.0 V5 –40 –30 –35 –20 –25 –10 –15 –45 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 0 V 1.4 V 1.65 V 1.8 V 2.0 V 3.0 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 27 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8119T− VCC = 3.0 V VAGC = 0 V (GPMAX) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.8 V (GP ≈ –5 dB) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.7 V (GP ≈ –10 dB) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 3.0 V VAGC = 3.0 V (GPMIN) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 3.3 V VAGC = 0 V (GPMAX) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 2.7 V VAGC = 0 V (GPMAX) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 28 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8119T− f = 1 900 MHz VAGC = 0 V (GPMAX)–30 –20 –70 –60 –50 –40 –80 Input Power Pin (dBm) Adjacent Channel Power Leakage Padj (dBc) vs. INPUT POWER ADJACENT CHANNEL POWER LEAKAGE VCC = 2.7 V ±600 kHz

3.0 V ±600 kHz

3.3 V ±600 kHz

f = 1 900 MHz V CC = 3.0 V–50 –45 –70 –65 –60 –55 –75 Gain Control Voltage VAGC (V) Adjacent Channel Power Leakage Padj (dBc) vs. GAIN CONTROL VOLTAGE ADJACENT CHANNEL POWER LEAKAGE –12 dBm ±600 kHz –15 dBm ±600 kHz Pin = –10 dBm ±600 kHz∆ Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 29 µPC8119T,µPC8120T 7. 2 µPC8120T No signals 0 1234 Supply Voltage V CC (V) Circuit Current ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No signals 200 125 150 175 100 Gain Control Voltage VAGC (V) GAIN CONTROL VOLTAGE GAIN CONTROL CURRENT vs. Gain Control Current IAGC ( A)µ VCC = 2.7 V 3.0 V 3.3 V OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. Circuit Current ICC (mA) Operating Ambient Temperature TA (˚C) 0–40 –20 0 20 40 60 80 100 No signals 3.0 V 2.7 V VCC = 3.3 V vs. GAIN CONTROL VOLTAGE OUTPUT CURRENT, CIRCUIT CURRENT Circuit Current ICC (mA) Output Current Iout (mA) Gain Control Voltage VAGC (V) No signals VCC = 3.3 V 3.0 V 2.7 V VCC = 3.3 V 3.0 V 2.7 V ICC Iout START 100.000 000 MHz STOP 3 100.000 000 MHz S11–FREQUENCY VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm : 950 MHz 49.6 Ω – 43.49 Ω : 1 440 MHz 32.908 Ω – 34.803 Ω : 1 900 MHz 26.389 Ω – 24.797 Ω 3 1 START 100.000 000 MHz STOP 3 100.000 000 MHz S22–FREQUENCY VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm : 950 MHz 33.758 Ω – 173.11 Ω : 1 440 MHz 35.742 Ω – 123.63 Ω : 1 900 MHz 34.758 Ω – 105.66 Ω Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 30 µPC8119T,µPC8120T 7. 2. 1 Output port matching at f = 950 MHz −µPC8120T− START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm S11–FREQUENCY 1; 42.344 Ω –55.41 Ω 3.0235 pF 950.000 000 MHz MARKER 1 START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm S22–FREQUENCY 1; 50.91 Ω –5.9805 Ω 28.013 pF 950.000 000 MHz MARKER 1 950.000 000 MHz S11–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –5.6328 dB 3.3 V VCC = 2.7 V 3.0 V1 950.000 000 MHz S11–FREQUENCY VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –5.7196 dB TA = +85˚C +25˚C –40˚C 950.000 000 MHz S22–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –19.447 dB VCC = 3.0 V 2.7 V 3.3 V 950.000 000 MHz S22–FREQUENCY VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –18.205 dB TA = +85˚C +25˚C –40˚C Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 31 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8120T− 950.000 000 MHz S21–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 7 dB 1: 12.768 dB VCC = 3.3 V 3.0 V 2.7 V 950.000 000 MHz S21–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 7 dB 1: –12.78 dB TA = –40˚C +25˚C +85˚C 950.000 000 MHz S12–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –31.551 dB VCC = 3.3 V 3.0 V 2.7 V 950.000 000 MHz S12–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –31.543 dB TA = –40˚C +25˚C +85˚C Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 32 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8120T− 950.000 000 MHz S11–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –5.6855 dB VAGC = 0 to 1.2 V 1.4 V 1.6 V 1.8 V 2.2 to 3.0 V 950.000 000 MHz S21–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 5 dB/ REF 0 dB 1: 12.776 dB 1.1 V 1.0 V VAGC = 0.9 V 1.8 V 1.7 V 1.6 V 1.5 V 1.4 V 1.3 V 1.2 V 3.0 V 2.0 V 1.9 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –40 –30 –20 –10 VCC = 2.7 V 3.0 V 3.3 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –40 –30 –20 –10 TA = –25˚C +25˚C +75˚C +75˚C +25˚C –25˚C 950.000 000 MHz S12–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –31.081 dB VAGC = 3.0 V 0 V 950.000 000 MHz S22–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –19.041 dB 1.2 V 2.3 to 3.0 V 0 to 0.9 V VAGC = 1.6 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 33 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8120T− f = 950 MHz VAGC = 3.0 V –15 –10 –20 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.3 V 3.0 V 2.7 V f = 950 MHz VCC = 3.0 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 3.0 V 1.5 V 1.3 V 0 V 1.0 V 1.15 V f = 950 MHz VCC = 3.3 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 3.3 V 1.7 V 1.5 V 1.35 V 1.2 V 0 V f = 950 MHz VCC = 2.7 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 2.7 V 1.3 V 1.1 V 0.95 V 0.8 V 0 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 34 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8120T− VCC = 3.0 V VAGC = 1.3 V (GP ≈ –10 dB) f1 = 950 MHz f2 = 951 MHz 2f1–f2 (949 MHz) 2f2–f1 (952 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 1.15 V (GP ≈ –20 dB) f1 = 950 MHz f2 = 951 MHz 2f1–f2 (949 MHz) 2f2–f1 (952 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 1.0 V (GP ≈ –30 dB) f1 = 950 MHz f2 = 951 MHz 2f1–f2 (949 MHz) 2f2–f1 (952 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 0 V (GP ≈ –38 dB) f1 = 950 MHz f2 = 951 MHz 2f1–f2 (949 MHz) 2f2–f1 (952 MHz) Pout IM3 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER VCC = 3.0 V VAGC = 3.0 V (GPMAX) f1 = 950 MHz f2 = 951 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.5 V (GP ≈ 0 dB) f1 = 950 MHz f2 = 951 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (949 MHz) 2f2–f1 (952 MHz) Pout IM3 Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 35 µPC8119T,µPC8120T Output port matching at f = 950 MHz −µPC8120T− VCC = 3.3 V VAGC = 3.3 V (GPMAX) f1 = 950 MHz f2 = 951 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 VCC = 2.7 V VAGC = 2.7 V (GPMAX) f1 = 950 MHz f2 = 951 MHz Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER –60 –50 –40 –30 –20 –10 –70 2f2–f1 (952 MHz) 2f1–f2 (949 MHz) Pout IM3 f = 950 MHz VAGC = VCC (GPMAX)–30 –20 –70 –60 –50 –40 –80 Input Power Pin (dBm) Adjacent Channel Power Leakage Padj (dBc) vs. INPUT POWER ADJACENT CHANNEL POWER LEAKAGE VCC = 2.7 V ±50 kHz f = 950 MHz VCC = 3.0 V–50 –45 –70 –65 –60 –55 –75 Gain Control Voltage VAGC (V) Adjacent Channel Power Leakage Padj (dBc) vs. GAIN CONTROL VOLTAGE ADJACENT CHANNEL POWER LEAKAGE Pin = –17.4 dBm ±50 kHz –19.4 dBm ±50 kHz –17.4 dBm ±100 kHz –19.4 dBm ±100 kHz Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 36 µPC8119T,µPC8120T 7. 2. 2 Output port matching at f = 1 440 MHz −µPC8120T− 1 440.000 000 MHz1.44 GHz S11–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.064 dB 3.3 V 3.0 V VCC = 2.7 V 1 440.000 000 MHz S11–FREQUENCY VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.0673 dB +25˚C –40˚C TA = +85˚C 1 440.000 000 MHz S22–FREQUENCY VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –22.951 dB TA = +85˚C +25˚C –40˚C START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm S11–FREQUENCY 1; 36.68 Ω –50.342 Ω 2.2582 pF 1 440.000 000 MHz MARKER 1 START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm S22–FREQUENCY 1; 48.615 Ω –5.4863 Ω 20.145 pF 1 440.000 000 MHz MARKER 1 1 440.000 000 MHzMARKER 1 S22–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –24.057 dB VCC = 3.3 V 3.0 V 2.7 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 37 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8120T− 1 440.000 000 MHz S21–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 7 dB 1: 12.974 dB MARKER 1 VCC = 3.3 V 3.0 V 2.7 V 1 440.000 000 MHz S12–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –35.238 dB –10 –50 –40 –30 –20 TA = +85˚C +25˚C –40˚C1 1 440.000 000 MHz S12–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –35.378 dB –10 –50 –40 –30 –20 MARKER 1 VCC = 3.3 V 3.0 V 2.7 V 1 440.000 000 MHz S21–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 7 dB 1: 13.025 dB MARKER 1 +25˚C +85˚C Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 38 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8120T− POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –30 –20 –10 VCC = 2.7 V 3.0 V 3.3 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –30 –20 –10 TA = –25˚C +25˚C +75˚C +75˚C +25˚C –25˚C 1 440.000 000 MHz S21–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 5 dB/ REF 0 dB 1: –12.908 dB 1.0 V 0.9 V VAGC = 0 V 3.0 V 2.0 V 1.9 V 1.8 V 1.7 V 1.6 V 1.5 V 1.4 V 1.3 V 1.2 V 1.1 V 1 440.000 000 MHz S11–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –6.1639 dB VAGC = 0 to 1.2 V 1.4 V 1.6 V 1.8 V 2.2 to 3.0 V MARKER 1 1 440.000 000 MHz S12–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –34.801 dB VAGC = 3.0 V 0 V MARKER 1 1 440.000 000 MHz S22–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –23.731 dB MARKER 1 1.35 V 0 to 0.9 V 2.3 to 3.0 V VAGC = 1.6 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 39 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8120T− f = 1 440 MHz VAGC = 3.0 V –15 –10 –20 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.3 V 3.0 V 2.7 V f = 1 440 MHz VCC = 3.0 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 3.0 V 1.5 V 1.3 V 1.15 V 0.95 V 0 V f = 1 440 MHz VCC = 3.3 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 1.3 V 1.1 V 0 V VAGC = 3.3 V 1.65 V 1.45 V f = 1 440 MHz VCC = 2.7 V0 –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 2.7 V 1.3 V 1.1 V 0.95 V 0.75 V 0 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 40 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8120T− VCC = 3.0 V VAGC = 3.0 V (GPMAX) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 439 MHz) 2f2–f1 (1 442 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.5 V (GP ≈ 0 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 439 MHz) 2f2–f1 (1 442 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.3 V (GP ≈ –10 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 439 MHz) 2f2–f1 (1 442 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.15 V (GP ≈ –20 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 439 MHz) 2f2–f1 (1 442 MHz) Pout IM3 VCC = 3.0 V VAGC = 0 V (GP ≈ –30 dB) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER Pout IM32f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 41 µPC8119T,µPC8120T Output port matching at f = 1 440 MHz −µPC8120T− VCC = 3.3 V VAGC = 3.3 V (GPMAX) f1 = 1 440 MHz f2 = 1 441 MHz –60 –50 –40 –30 –20 –10 –70 Input Power P in (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 VCC = 2.7 V VAGC = 2.7 V (GPMAX) f1 = 1 440 MHz f2 = 1 441 MHz Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER –60 –50 –40 –30 –20 –10 –70 2f2–f1 (1 442 MHz) 2f1–f2 (1 439 MHz) Pout IM3 f = 1 440 MHz VAGC = VCC (GPMAX) –30 –20 –10 –70 –60 –50 –40 –80 Input Power Pin (dBm) Adjacent Channel Power Leakage Padj (dBc) vs. INPUT POWER ADJACENT CHANNEL POWER LEAKAGE VCC = 2.7 V ±50 kHz f = 1 440 MHz V CC = 3.0 V–50 –45 –70 –65 –60 –55 –75 Gain Control Voltage VAGC (V) Adjacent Channel Power Leakage Padj (dBc) vs. GAIN CONTROL VOLTAGE ADJACENT CHANNEL POWER LEAKAGE Pin = –17.4 dBm ±50 kHz –19.4 dBm ±50 kHz –17.4 dBm ±100 kHz∆ –19.4 dBm ±100 kHz∆ Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 42 µPC8119T,µPC8120T 7. 2. 3 Output port matching at f = 1 900 MHz −µPC8120T− S11–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz 1 900.000 000 MHz S11 log MAG 5 dB/ REF 0 dB 1: –5.5512 dB 2.7 V VCC = 3.3 V 3.0 V MARKER 1 1 900.000 000 MHz S22–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF 0 dB 1: –24.124 dB VCC = 2.7 V 3.0 V 3.3 V MARKER 1 1 900.000 000 MHz S12–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF 0 dB 1: –37.895 dB VCC = 3.3 V 3.0 V 2.7 V MARKER 1 START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm S11–FREQUENCY 1; 24.991 Ω –27.029 Ω 3.0991 pF 1 900.000 000 MHz MARKER 1 START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V, VAGC = 3.0 V (GPMAX), Pin = –30 dBm S22–FREQUENCY 1; 52.643 Ω 16.369 Ω 1.3712 nH 1 900.000 000 MHz MARKER 1 1 900.000 000 MHz S21–FREQUENCY VAGC = 3.0 V (GPMAX), Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 1 dB/ REF 7 dB 1: 12.505 dB VCC = 3.3 V 3.0 V 2.7 V MARKER 1 Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 43 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8120T− POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –10 VCC = 2.7 V 3.0 V 3.3 V POWER GAIN vs. GAIN CONTROL VOLTAGEPower Gain GP (dB) Gain Control Voltage VAGC (V) –10 TA = –25˚C +25˚C +75˚C MARKER 1 S21–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S21 log MAG 5 dB/ REF –10 dB 1: 13.389 dB 2.0 V 1.7 V 1.4 V 1.0 V 0 V VAGC = 3.0 V MARKER 1 S12–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 –40 –50 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF –25 dB 1: –37.828 dB 3.0 V VAGC = 0 V MARKER 1 S22–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S22 log MAG 5 dB/ REF –10 dB 1: –21.073 dB VAGC = 1.6 V 3.0 V 1.25 V 0 V MARKER 1 S11–FREQUENCY DEPENDENCE OF V AGC VCC = 3.0 V, Pin = –30 dBm –10 –20 –30 START 100.000 000 MHz STOP 3 100.000 000 MHz S11 log MAG 5 dB/ REF –10 dB 1: –5.75 dB VAGC = 0 V 1.4 V 1.6 V 3.0 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 44 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8120T− f = 1 900 MHz VAGC = 3.0 V –15 –10 –20 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.3 V 3.0 V 2.7 V f = 1 900 MHz V CC = 3.0 V5 –40 –30 –35 –20 –25 –10 –15 –45 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VAGC = 3.0 V 1.65 V 1.5 V 1.4 V 1.3 V 0 V f = 1 900 MHz V CC = 3.3 V5 –40 –30 –35 –20 –25 –10 –15 –45 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 1.65 V 1.55 V 1.48 V 0 V VAGC = 3.3 V 1.9 V f = 1 900 MHz V CC = 2.7 V5 –40 –30 –35 –20 –25 –10 –15 –45 Input Power Pin (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 1.3 V 1.2 V 1.13 V 0 V VAGC = 2.7 V 1.5 V Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 45 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8120T− VCC = 3.0 V VAGC = 3.0 V (GPMAX) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.4 V (GP ≈ –5 dB) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 899.7 MHz) 2f2–f1 (1 900.6 MHz) Pout IM3 VCC = 3.0 V VAGC = 1.3 V (GP ≈ –10 dB) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 899.7 MHz) 2f2–f1 (1 900.6 MHz) Pout IM3 VCC = 3.0 V VAGC = 0 V (GPMIN) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f1–f2 (1 899.7 MHz) 2f2–f1 (1 900.6 MHz) Pout IM3 VCC = 3.3 V VAGC = 3.3 V (GPMAX) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 VCC = 2.7 V VAGC = 2.7 V (GPMAX) f1 = 1 900.0 MHz f2 = 1 900.3 MHz –60 –50 –40 –30 –20 –10 –70 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 2f2–f1 (1 900.6 MHz) 2f1–f2 (1 899.7 MHz) Pout IM3 Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 46 µPC8119T,µPC8120T Output port matching at f = 1 900 MHz −µPC8120T− f = 1 900 MHz VAGC = VCC (GPMAX)–30 –20 –70 –60 –50 –40 –80 Input Power Pin (dBm) Adjacent Channel Power Leakage Padj (dBc) vs. INPUT POWER ADJACENT CHANNEL POWER LEAKAGE VCC = 2.7 V ±600 kHz f = 1 900 MHz V CC = 3.0 V–50 –45 –70 –65 –60 –55 –75 Gain Control Voltage VAGC (V) Adjacent Channel Power Leakage Padj (dBc) vs. GAIN CONTROL VOLTAGE ADJACENT CHANNEL POWER LEAKAGE –12 dBm ±600 kHz∆ –15 dBm ±600 kHz∆ Pin = –10 dBm ±600 kHz∆ Remark The graphs indicate nominal characteristics.

Data Sheet PU10413EJ01V0DS 47 µPC8119T,µPC8120T 8. PACKAGE DIMENSIONS 6-PIN MINIMOLD (UNIT: mm) 2.9±0.2 0.950.95 1.9 0.3 +0.1 –0.05 2.8+0.2 –0.3 1.5+0.2 –0.1 0.8 0.13±0.1 1.1+0.2 –0.1 0 to 0.1 0.2 MIN.

Data Sheet PU10413EJ01V0DS 48 µPC8119T,µPC8120T 9. NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to mi nimize ground impedance (to pr event undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) Keep the track length of the gr ound pins as short as possible. (4) A low pass filter must be attached to V CC line. (5) A matching circuit must be externally attached to output port. 10. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating).

Data Sheet PU10413EJ01V0DS 49 µPC8119T,µPC8120T M8E 00. 4 - 0110 The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product be fore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0307 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPC8119T,µPC8120T