UPC8112TB-E3

UPC8112TB RENESAS | Alldatasheet

Document overview

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Technical content

Datasheet sections

• 12.1 Without Signals
• 12.2 IF 100 MHz Matching (f
• 12.4 IF 240 MHz Matching
• 13.1 Calibrated on pin of DUT
• 13.2 IF Output Matching

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE © 1997, 2000 Document No. P12808EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Printed in Japan DATA SHEET The mark shows major revised points.

DESCRIPTION

The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB and µPC2758TB feature low impedance output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8112TB is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference) IM3 = –88 dBm@P RFin = –38 dBm, 1.9 GHz (reference)
• Similar conversion gain to µPC2757 and lower noise figure than µPC2758
• Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference) RFLO = –55 dB@fRFin = 1.9 GHz (reference)
• High linearity : P O(sat) = –2.5 dBm TYP.@fRFin = 900 MHz PO(sat) = –3 dBm TYP.@fRFin = 1.9 GHz
• Low current consumption : ICC = 8.5 mA TYP.
• Supply voltage : V CC = 2.7 to 3.3 V
• High-density surface mounting : 6-pin super minimold package

APPLICATIONS

• 1.5 to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
• 800 to 900 MHz cellular telephone (PDC800M and so on) ORDER INFORMATION Part Number Package Markings Supplying Form µPC8112TB-E3 6-pin super minimold C2K Embossed tape 8 mm wide. Pin 1, 2, 3 face the tape perforation side. Qty 3kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order: µPC8112TB). Caution Electro-static sensitive devices

Data Sheet P12808EJ3V0DS00 3 PPPPPC8112TB 1. PIN CONNECTIONS 2. PRODUCT LINE-UP (TA = +25°C, VCC = VPS = 3.0 V, ZS = ZL = 50 ::::) Items No RF ICC (mA)

900 MHz

SSB · NF (dB)

1.5 GHz

SSB · NF (dB)

1.9 GHz

SSB · NF (dB) (dB) (dB) (dB) (dBm) (dBm) (dBm) PPC2757T 5.6 10 10 13 15 15 13 ð14 ð14 ð12 PPC2757TB PPC2758T 11 9 10 13 19 18 17 ð13 ð12 ð11 PPC2758TB PPC8112T 8.5 9 11 11 15 13 13 ð10 ð9 ð7 PPC8112TB Items 900 MHz PO(sat) (dBm) PO(sat) (dBm) PO(sat) (dBm) (dB) (dB) (dB) IF Output Configuration Package PPC2757T ð3 ðð 8 – – – Emitter follower 6-pin minimold PPC2757TB 6-pin super minimold PPC2758T +1 ðð 4 – – – 6-pin minimold PPC2758TB 6-pin super minimold PPC8112T ð2.5 ð3 ð3 ð80 ð57 ð55 Open collector 6-pin minimold PPC8112TB 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Cautions 1. The PPPPPC2757 and PPPPPC2758’s IIP3 are calculated with ''''IM3 = 3 which is the same IM 3 inclination as PPPPPC8112. On the other hand, OIP3 of Standard characterisitcs in page 7 is cross point IP. 2. This document is to be specified for PPPPPC8112TB. The other part number mentioned in this document should be referred to the data sheet of each part number. Pin No. Pin Name

1 RFinput

3 LOinput

6 IFoutput

(Top View) (Bottom View) C2K

Data Sheet P12808EJ3V0DS004 µµµµPC8112TB 3. INTERNAL BLOCK DIAGRAM RFinput IFoutput LOinput 4. SYSTEM APPLICATION EXAMPLE Digital cordless phone I Q DEMOD. I Q ÷N PLL PLL 90˚ VCO PA TX SW RX Low noise Tr. PC8112TBµ φ

Data Sheet P12808EJ3V0DS00 5 µµµµPC8112TB 5. PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit 1 RFinput − 1.2 RF input pin of mixer. This mixer is designed as double balanced type. This pin should be externally coupled to front stage with DC cut capacitor. 2G N D G N D − Ground pin. This pin must be connected to the system ground. Form the ground pattern as wide as possible and the truck length as short as possible to minimize ground impedance. 5V CC 2.7 to 3.3 − Supply voltage pin. This pin should be connected with bypass capacitor (example: 1 000 pf) to minimize ground impedance.

6 IFoutput as same as

− IF output pin. This output is configured with open collector of high impedance. This pin should be externally equipped with matching circuit of inductor should be selected as small resistance and high frequency use. 3 LOinput − 1.4 Input pin of local amplifier. This amplifier is designed as differen- tial type. This pin should be externally coupled to local signal source with DC cut capacitor. Recommendable input level is −15 to 0 dBm. 4P S V CC or GND − Power save control pin. This pin can control ON/OFF operation with bias as follows; Bias: V Operation ≥ 2.5 ONVPS 0 to 0.5 OFF From LO To mixer

Data Sheet P12808EJ3V0DS006 µµµµPC8112TB 6. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25°C, 5 pin and 6 pin 3.6 V Total Circuit Current I CC TA = +25°C 77.7 mA Total Power Dissipation P D Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C 7. RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage V CC 2.7 3.0 3.3 V 5 pin and 6 pin should be applied to same voltage. Operating Ambient Temperature T A −40 +25 +85 °C LO Input Power P LOin −15 −10 0 dBm Zs = 50 Ω RF Input Frequency f RFin 0.8 1.9 2.0 GHz IF Output Frequency f IFout 100 250 300 MHz With external matching 8. ELECTRICAL CHARACTERISTICS (Unl ess otherwise specified, TA = ++++25°°°°C, VCC = VPS = VIFout = 3.0 V, PLOin = −−−−10 dBm, ZS = ZL = 50 ΩΩΩΩ ) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No input signal 4.9 8.5 11.7 mA Circuit Current at Power Save Mode ICC(PS) VCC = 3.0 V, VPS = 0.5 V −− 0.1 µA Conversion Gain CG f RFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.9 GHz, fLOin = 1.66 GHz 11.5 9.5 17.5 15.5 dB SSB Noise Figure SSB •NF f RFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.9 GHz, fLOin = 1.66 GHz 9.0 11.2 13.2 dB Saturated Output Power Po (sat) fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.9 GHz, fLOin = 1.66 GHz (PRFin = −10 dBm each) −6.5 −2.5 dBm

Data Sheet P12808EJ3V0DS00 7 µµµµPC8112TB 9. STANDARD CHARACTERISTICS FOR REFERENCE (TA = ++++25°°°°C, VCC = VPS = VIFout = 3.0 V, PLOin = −−−−10 dBm, ZS = ZL = 50 ΩΩΩΩ ) Parameter Symbol Test Conditions Reference Unit Conversion Gain CG f RFin = 1.5 GHz, fLOin = 1.6 GHz 13 dB SSB Noise Figure SSB •NF f RFin = 1.5 GHz, fLOin = 1.6 GHz 11 dB LO Leakage at RF pin LO RF fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz −45 −46 −45 dB RF Leakage at LO pin RF LO fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz −80 −57 −55 dB LO Leakage at IF pin LO if fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz −32 −33 −30 dB 3rd Order Distortion Input Intercept Point Note IIP3 fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz −10 dBm Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve. IIP3 = (Δ IM3 × Pin + CG − IM3) ÷ (Δ IM3 − 1) (dBm) [Δ IM3: IM3 curve inclination in linear range] µPC8112’s Δ IM3 is closer to 3 (theoretical inclination) than µPC2757 and µPC2758 of conventional ICs. 10. TEST CIRCUIT 1 000 pF 50 Ω C 1 150 Ω (Top View) LOinput GND RFinput PS VCC IFoutput POWER SAVE 3 V C 6 50 Ω 1 000 pF C 2 C 4, C 5 Spectrum Analyzer Signal Generator Signal Generator

Data Sheet P12808EJ3V0DS008 µµµµPC8112TB 11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD LO input RF input PS bias Voltage supply IF output Short Chip Short Chip = 1 000 pF GND C 2 C 1 VCC PS C 4 C 5 C 6 C 3 Component Number IF 100 MHz Matching IF 240 MHz Matching Remarks C 1 to C5 1 000 pF 1 000 pF CHIP C C 6 5 pF 2 pF CHIP C L1 330 nH 84 nH CHIP L EVALUATION BOARD CHARACTERS AND NOTE (1) 35 µm thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) {: Through holes (5) To mount C6, pattern should be cut. Caution Test circuit or print pattern in this sheet is for testing IC characteristics. They are not an application circuit or recommended system circuit. In the case of actual system application, external circuits including print pattern and matching circuit constant of output port should be designed in accordance with IC’s S-parameters and environmental components. Remark External circuits of the IC can be referred to following application notes.

• USAGE AND APPLICATION CHARACTERISTICS OF µPC2757, µPC2758, AND µPC8112, 3-V POWER SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION (Document No. P11997E)

Data Sheet P12808EJ3V0DS00 9 µµµµPC8112TB 12. TYPICAL CHARACTERISTICS (TA = +25°°°°C, unless otherwise specified, measured on test circuits)

12.1 Without Signals

Circuit Current ICC (mA)Circuit Current ICC (mA) Circuit Current ICC (mA) 10 2 3 4 Supply Voltage VCC (V) 10 2 3 4 PS Pin Applied Voltage VPS (V) 10 2 3 4 Supply Voltage VCC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGECIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. PS PIN APPLIED VOLTAGE VCC = VPS = VIFout VCC = VPS = VIFout VCC = VIFout TA = +85°C TA = +25°C TA = –40°C VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V

Data Sheet P12808EJ3V0DS0010 µµµµPC8112TB

12.2 IF 100 MHz Matching (fRFin = 900 MHz)

–10 –15 –20 –25 –30IF Output Power PIFout (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER vs. RF INPUT POWER –35 –10 –15 –20 –25 –30IF Output Power PIFout (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER vs. RF INPUT POWER –35 –10 –20 –30 –40 IF Output Power of Each Tone PIFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER OF EACH TONE, IM3 vs. RF INPUT POWER –50 –60 –70 Conversion Gain CG (dB) LO Input Power PLOin (dBm) CONVERSION GAIN vs. LO INPUT POWER –10 100 VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V Pout IM3 fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V fRFin = 900 MHz PRFin = –40 dBm fLOin = 1 000 MHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V fRFin1 = 900 MHz fRFin2 = 905 MHz fLOin = 1 000 MHz PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V fIFout = 100 MHz

Data Sheet P12808EJ3V0DS00 11 µµµµPC8112TB Conversion Gain CG (dB) 2.52 3 3.5 Supply Voltage VCC (V) CONVERSION GAIN vs. SUPPLY VOLTAGE fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V SSB Noise Figure SSB•NF (dB) –30–40 –20 –10 LO Input Power PLOin (dBm) SSB NOISE FIGURE vs. LO INPUT POWER fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V Conversion Gain CG (dB) 500 100 150 IF Output Frequency fIFout (MHz) CONVERSION GAIN vs. IF OUTPUT FREQUENCY –25 500 fRFin = 900 MHz PRFin = –40 dBm PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V –10 –15 –20 250200 300 350 400 450

Data Sheet P12808EJ3V0DS0012 µµµµPC8112TB 12.3 IF 100 MHz Matching (fRFin = 1.5 GHz) –10 –15 –20 –25IF Output Power PIFout (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER vs. RF INPUT POWER –30 fRFin = 1.5 GHz fLOin = 1.6 GHz PLOin = –10 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V –10 –15 –20 –25IF Output Power PIFout (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER vs. RF INPUT POWER –30 VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V fRFin = 1.5 GHz fLOin = 1.6 GHz PLOin = –10 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V –10 –20 –30 –40 –50 IF Output Power of Each Tone PIFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) –40 –30 –20 –10 RF Input Power PRFin (dBm) IF OUTPUT POWER OF EACH TONE, IM3 vs. RF OUTPUT POWER –60 –70 –80 Pout IM3 fRFin1 = 1.5 GHz fRFin2 = 1.505 GHz fLOin = 1.6 GHz PLOin = –10 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V–90 –10Conversion Gain CG (dB) LO Input Power PLOin (dBm) CONVERSION GAIN vs. LO INPUT POWER –15 100 fRFin = 1.5 GHz fLOin = 1.6 GHz PRFin = –40 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V

Data Sheet P12808EJ3V0DS00 13 µµµµPC8112TB Conversion Gain CG (dB) 2.52 3 3.5 Supply Voltage VCC (V) CONVERSION GAIN vs. SUPPLY VOLTAGE fRFin = 1.5 GHz fLOin = 1.6 GHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V SSB Noise Figure SSB•NF (dB) –30–40 –20 –10 LO Input Power PLOin (dBm) SSB NOISE FIGURE vs. LO INPUT POWER fRFin = 1.5 GHz fLOin = 1.6 GHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V

Data Sheet P12808EJ3V0DS0014 µµµµPC8112TB

12.4 IF 240 MHz Matching

–10 –15 –20 –25 –30IF Output Power PIFout (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER vs. RF INPUT POWER –35 –10 –15 –20 –25 –30IF Output Power PIFout (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER vs. RF INPUT POWER –35 VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V fRFin = 1.9 GHz fLOin = 1.66 GHz PLOin = –10 dBm fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V fRFin = 1.9 GHz fLOin = 1.66 GHz PLOin = –10 dBm fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V–40 TA = –40°C TA = +25°C TA = +85°C –40 –10 –20 –30 –40 IF Output Power of Each Tone PIFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) RF Input Power PRFin (dBm) IF OUTPUT POWER OF EACH TONE, IM3 vs. RF INPUT POWER –50 –60 –70 –10Conversion Gain CG (dB) LO Input Power PLOin (dBm) CONVERSION GAIN vs. LO INPUT POWER –15 100 Pout IM3 fRFin = 1.9 GHz PRFin = –40 dBm fLOin = 1.66 GHz fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V fRFin1 = 1.9 GHz fRFin2 = 1.905 GHz fLOin = 1.66 GHz PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V fIFout = 240 MHz

Data Sheet P12808EJ3V0DS00 15 µµµµPC8112TB Conversion Gain CG (dB) 2.52 3 3.5 Supply Voltage VCC (V) CONVERSION GAIN vs. SUPPLY VOLTAGE fRFin = 1.9 GHz PRFin = –40 dBm fLOin = 1.66 GHz PLOin = –10 dBm fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V SSB Noise Figure SSB•NF (dB) –30–40 –20 –10 LO Input Power PLOin (dBm) SSB NOISE FIGURE vs. LO INPUT POWER fRFin = 1.9 GHz fLOin = 1.66 GHz fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V Conversion Gain CG (dB) 0 100 IF Output Frequency fIFout (MHz) CONVERSION GAIN vs. IF OUTPUT FREQUENCY 600 fRFin = 1.9 GHz PRFin = –40 dBm PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V –10 –15 –20 200 300 400 500 SSB Noise Figure SSB•NF (dB) –20–40 0 20 Operating Ambient Temperature TA (°C) SSB NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE 100 fRFin = 1.9 GHz fLOin = 1.66 GHz PLOin = –10 dBm VCC = VPS = VIFout = 3.0 V 40 60 80 Remark The graphs indicate nominal characteristics.

Data Sheet P12808EJ3V0DS0016 µµµµPC8112TB 13. S-PARAMETERS

13.1 Calibrated on pin of DUT

Z

1.0 Units

200.0 mUnits/ 62.711 Ω –224.07 Ω MARKER 1

500.0 MHz

0.050000000 GHz

3.000000000 GHz

VCC = VPS = 3.0V 1:500 MHz 62.711 Ω -j224.07 Ω 2:900 MHz 48.977 Ω -j219.18 Ω 3:1 500 MHz 40.641 Ω -j129.94 Ω 4:1 900 MHz 37.422 Ω -j101.51 Ω 5:2 500 MHz 34.801 Ω -j74.141 Ω S11 REF hp Z 200.0 mUnits/ 76.656 Ω –421.67 Ω MARKER 1 VCC = 3.0V VPS = GND 1:500 MHz 76.656 Ω -j421.67 Ω 2:900 MHz 53.102 Ω -j234.55 Ω 3:1 500 MHz 44.844 Ω -j140.82 Ω 4:1 900 MHz 40.898 Ω -j109.73 Ω 5:2 500 MHz 38.063 Ω -j80.547 Ω S11 REF hp Z 200.0 mUnits/ 169.11 Ω –429.98 Ω MARKER 1 VCC = VPS = 3.0V 1:500 MHz 169.11 Ω -j429.98 Ω 2:900 MHz 91.875 Ω -j263.7 Ω 3:1 500 MHz 60.781 Ω -j162.56 Ω 4:1 900 MHz 56.789 Ω -j125.66 Ω 5:2 500 MHz 49.652 Ω -j97.602 Ω S11 REF hp Z 200.0 mUnits/ 135.53 Ω –575.06 Ω MARKER 1 VCC = 3.0V VPS = GND 1:500 MHz 135.53 Ω -j575.06 Ω 2:900 MHz 78.266 Ω -j337.66 Ω 3:1 500 MHz 55.883 Ω -j201.43 Ω 4:1 900 MHz 52.734 Ω -j159.63 Ω 5:2 500 MHz 44.262 Ω -j122.66 Ω S22 REF hp Z 200.0 mUnits/ 201.00 Ω –1.7173 kΩ MARKER 1

100.0 MHz

VCC = VPS = 3.0V 1:100 MHz 201.88 Ω -j1.7173 kΩ 2:240 MHz 92.094 Ω -j715.72 Ω S22 REF hp Z 200.0 mUnits/ 056.56 Ω –1.7468 kΩ MARKER 1 VCC = 3.0V VPS = GND 1:100 MHz 56.56 Ω -j1.7468 kΩ 2:240 MHz 85.5 Ω -j722.22 Ω

Data Sheet P12808EJ3V0DS00 17 µµµµPC8112TB 13.2 IF Output Matching (VCC = VPS = VIFout = 3.0 V) −−−−on Test Circuit−−−− (This S11 is monitored at IF connector on test circuit fixture) IF 100 MHz MATCHING IF 240 MHz MATCHING 100.000 000 MHzhp S11 1 U FS 1 : 50.277 Ω –22.559 Ω 70.552 pF MARKER 1

100 MHz

START 50.000 000 MHz STOP 3 000.000 000 MHz 240.000 000 MHzhp S11 1 U FS 1 : 31.052 Ω –84.961 mΩ 7.8053 nF MARKER 1

240 MHz

START 50.000 000 MHz STOP 3 000.000 000 MHz 102.366 002 MHzhp S11 log MAG. 10 dB/ REF 0 dB 1 : –27.655 dB MARKER 1

102.366002 MHz

START 90.000 000 MHz STOP 110.000 000 MHz 241.770 000 MHzhp S11 log MAG. 10 dB/ REF 0 dB 1 : –13.556 dB MARKER 1

241.770000 MHz

START 230.000 000 MHz STOP 250.000 000 MHz The data in this page are to make clear the test condition of impedance matched to next stage, not specify the recommended condition. The S11 smith charts of the test fixture setting IC are normalized to ZO = 50 Ω , because the IC's load is the measurement equipment of 50 Ω impedance. In your use, the output return loss value can be helpful information to adjust your circuit matching to next stage.

Data Sheet P12808EJ3V0DS0018 µµµµPC8112TB 14. PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9–0.1 0.7 0 to 0.1 0.15+0.1 –0.05 2.0–0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1–0.1 1.25–0.1 0.1 MIN.

Data Sheet P12808EJ3V0DS00 19 µµµµPC8112TB 15. NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). Keep the track length of the ground pins as short as possible. (3) The bypass capacitor (example: 1 000 pF) should be attached to the VCC pin. (4) The matching circuit should be externally attached to the IF output pin. (5) The DC cut capacitor must be each attached to the input and output pins. 16. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Condition Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

µµµµPC8112TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. M8E 00. 4 The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).