UPC8187TB RENESAS | Alldatasheet

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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµ µµPC8187TB SILICON MMIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER Document No. P15106EJ2V0DS00 (2nd edition) Date Published January 2001 N CP(K) Printed in Japan DATA SHEET © 2000, 2001 The mark shows major revised points.

DESCRIPTION

The µPC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional µPC8163TB. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.

FEATURES

  • High output frequency : f RFout = 0.8 to 2.5 GHz
  • High-density surface mounting : 6-pin super minimold package
  • Supply voltage : V CC = 2.7 to 3.3 V
  • Higher IP 3 : OIP3 = +10 dBm @ fRFout = 1.9 GHz APPLICATION
  • TDMA, PCS, CDMA etc.

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC8187TB-E3 6-pin super minimold C3G • Embossed tape 8 mm wide.

  • Pin 1, 2, 3 face the tape perforation side.
  • Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8187TB)

Data Sheet P15106EJ2V0DS 3 µµ µµPC8187TB 1. PIN CONNECTIONS 2. SERIES PRODUCTS (TA = +25°C, VCC = VPS = VRFout = 3.0 V, ZS = ZL = 50 ΩΩ ΩΩ ) CG (dB) Part Number ICC (mA) fRFout (GHz) @RF 0.9 GHzNote @RF 1.9 GHz @RF 2.4 GHz µPC8187TB 15 0.8 to 2.5 11 11 10 µPC8106TB 9 0.4 to 2.0 9 7 − µPC8109TB 5 0.4 to.2.0 6 4 − µPC8163TB 16.5 0.8 to 2.0 9 5.5 − PO(sat) (dBm) OIP3 (dBm) Part Number µPC8187TB +4 +2.5 +1 +10 +10 +8.5 Note fRFout = 0.83 GHz @ µPC8163TB and µPC8187TB Remark Typical performance. Please refer to 8. ELECTRICAL CHARACTERISTICS in detail. To know the associated product, please refer to each latest data sheet. 3. BLOCK DIAGRAM LOinput GND IFinput GND VCC RFoutput (Top View) C3G (Top View) (Bottom View) Pin No. Pin Name

1 IFinput

3 LOinput

6 RFoutput

µµ µµPC8187TB 4. SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM) SW PA PLL ÷N PLL I QDEMOD. I Q 90˚ TX RX VCO Phase shifter µ PC8187TB Low Noise Tr.

Data Sheet P15106EJ2V0DS 5 µµ µµPC8187TB 5. PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V)Note Function and Explanation Equivalent Circuit 1 IFinput − 1.2 This pin is IF input to double bal- anced mixer (DBM). The input is designed as high impedance. The circuit contributes to sup- press spurious signal. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. For above reason, double bal- anced mixer is adopted. GND GND − GND pin. Ground pattern on the board should be formed as wide as possible. Track Length should be kept as short as possible to minimize ground impedance. 3 LOinput − 2.1 Local input pin. Recommendable input level is −10 to 0 dBm. 5V CC 2.7 to 3.3 − Supply voltage pin.

6 RFoutput Same

V CC through external inductor − This pin is RF output from DBM. This pin is designed as open collector. Due to the high imped- ance output, this pin should be externally equipped with LC matching circuit to next stage. Note Each pin voltage is measured at VCC = VRFout = 2.8 V.

µµ µµPC8187TB 6. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Rating Unit Supply Voltage VCC TA = +25°C 3.6 V Power Dissipation PD Mounted on double-side copperclad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Maximum Input Power Pin +10 dBm 7. RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage VCC 2.7 2.8 3.3 V The same voltage should be applied to pin 5 and 6 Operating Ambient Temperature T A −40 +25 +85 °C Local Input Power PLOin −10 −50 d B m Z S = 50 Ω (without matching) RF Output Frequency fRFout 0.8 − 2.5 GHz With external matching circuit IF Input Frequency fIFin 50 − 400 MHz 8. ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VRFout = 2.8 V, fIFin = 150 MHz, PLOin = −− −−5 dBm) Parameter Symbol Test ConditionsNote MIN. TYP. MAX. Unit Circuit Current ICC No signal 11 15 19 mA CG1 f RFout = 0.83 GHz, PIFin = −20 dBm 8 11 14 dB CG2 f RFout = 1.9 GHz, PIFin = −20 dBm 8 11 14 dB Conversion Gain CG3 f RFout = 2.4 GHz, PIFin = −20 dBm 7 10 13 dB PO(sat)1f RFout = 0.83 GHz, PIFin = 0 dBm +1.5 +4 − dBm PO(sat)2f RFout = 1.9 GHz, PIFin = 0 dBm 0 +2.5 − dBm Saturated Output Power PO(sat)3f RFout = 2.4 GHz, PIFin = 0 dBm −1.5 +1 − dBm Note fRFout < fLOin @ fRFout = 0.83 GHz fLOin < fRFout @ fRFout = 1.9 GHz/2.4 GHz

Data Sheet P15106EJ2V0DS 7 µµ µµPC8187TB 9. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = VRFout = 2.8 V, PLOin = −− −−5 dBm) Parameter Symbol Test ConditionsNote Value Unit OIP31f RFout = 0.83 GHz +10 dBm OIP32f RFout = 1.9 GHz +10 dBm Output 3rd Order Distortion Intercept Point OIP33f RFout = 2.4 GHz fIFin1 = 150 MHz fIFin2 = 151 MHz +8.5 dBm IIP31f RFout = 0.83 GHz −1.0 dBm IIP32f RFout = 1.9 GHz −1.0 dBm Input 3rd Order Distortion Intercept Point IIP 33f RFout = 2.4 GHz fIFin1 = 150 MHz fIFin2 = 151 MHz −1.5 dBm SSB•NF1 f RFout = 0.83 GHz 11 dB SSB•NF2 f RFout = 1.9 GHz 12 dB SSB Noise Figure SSB•NF3 f RFout = 2.4 GHz fIFin = 150 MHz 12.5 dB Note fRFout < fLOin @ fRFout = 0.83 GHz fLOin < fRFout @ fRFout = 1.9 GHz/2.4 GHz

µµ µµPC8187TB 10. TEST CIRCUITS 10.1 TEST CIRCUIT 1 (fRFout = 0.83 GHz) Spectrum Analyzer Strip Line Signal Generator Signal Generator 1 000 pF 100 pF 50 Ω 50 Ω 50 Ω 4 pF 100 pF C 4 C 1 C 2 C 5 C 6 C 7 C 3 2.2 nH L 1 000 pF 1 000 pF VCC 10 pF IFinput GND LOinput RFoutput VCC GND 1 000 pF EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD C 1 C 2 L C 7 C 6 C 3 VCC RFout IFin uPC8187TB Loin C 5 C 4 COMPONENT LIST Form Symbol Value C1, C5, C7 1 000 pF C2, C4 100 pF C6 10 pF Chip capacitor C3 4 pF Chip inductor L 2.2 nHNote (∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad (∗2) Ground pattern on rear of the board (∗3) Solder plated patterns (∗4) : Through holes (∗5) : Join patterns with electrical tape Note 2.2 nH: LL1608-FH2N25 (TOKO Co., Ltd.)

Data Sheet P15106EJ2V0DS 9 µµ µµPC8187TB 10.2 TEST CIRCUIT 2 (fRFout = 1.9 GHz) Spectrum Analyzer Strip Line Signal Generator Signal Generator 1 000 pF 100 pF 50 Ω 50 Ω 50 Ω 470 nH 100 pF 3 pF LC 3 C 6 C 7 C 8 C 1 C 2 C 4C 5 0.5 pF 1 000 pF 1 000 pF VCC 10 pF IFinput GND LOinput RFoutput VCC GND 1 000 pF EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD C 1 C 2 C 3 C 4C 5 C 8 C 7 L VCC RFout IFin uPC8187TB Loin C 6 COMPONENT LIST Form Symbol Value C1, C6, C8 1 000 pF C2, C3 100 pF C7 10 pF C4 3 pF Chip capacitor C5 0.5 pF Chip inductor L 470 nHNote (∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad (∗2) Ground pattern on rear of the board (∗3) Solder plated patterns (∗4) : Through holes Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)

Data Sheet P15106EJ2V0DS10 µµ µµPC8187TB 10.3 TEST CIRCUIT 3 (fRFout = 2.4 GHz) Spectrum Analyzer Strip Line Signal Generator Signal Generator 1 000 pF 100 pF 50 Ω 50 Ω 50 Ω 470 nH 100 pF C 5 C 4 C 3 C 6 C 7 C 8 C 1 C 2 1 pF0.75 pF L 1 000 pF 1 000 pF VCC 10 pF IFinput GND LOinput RFoutput VCC GND 1 000 pF EXAMPLE OF TEST CIRCUIT 3 ASSEMBLED ON EVALUATION BOARD C 1 C 2 C 5 C 3 C 4 C 8 C 7 L VCC RFout IFin uPC8187TB Loin C 6 COMPONENT LIST Form Symbol Value C1, C6, C8 1 000 pF C2, C5 100 pF C7 10 pF C3 1 pF Chip capacitor C4 0.75 pF Chip inductor L 470 nHNote (∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad (∗2) Ground pattern on rear of the board (∗3) Solder plated patterns (∗4) : Through holes Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)

Data Sheet P15106EJ2V0DS 11 µµ µµPC8187TB Caution The test circuits and board pattern on data sheet are for performance evaluation use only (They are not recommended circuits). In the case of actual design-in, matching circuit should be de- termined using S-parameter of desired frequency in accordance to actual mounting pattern.

Data Sheet P15106EJ2V0DS12 µµ µµPC8187TB 11. TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°° °°C, VCC = VRFout) CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE No signals No signals 20 20 VCC = 3.3 V VCC = 3.0 V VCC = 2.8 V TA = +25°C TA = –40°C TA = +85°C VCC = 2.7 V Circuit Current ICC (mA) Supply Voltage VCC (V) Circuit Current ICC (mA) Operating Ambient Temperature TA (°C)

Data Sheet P15106EJ2V0DS 13 µµ µµPC8187TB 11.1 fRFout = 0.83 GHz –15 –10 –15 –10 VCC = 2.7 to 3.3 V VCC = 2.7 to 2.8 V VCC = 3.0 to 3.3 V TA = +25°C TA = +25°C TA = +85°C TA = –40°C TA = +85°C TA = –40°C fIFin = 150 MHz fLOin = 980 MHz PLOin = –5 dBm VCC = 2.8 V fIFin = 150 MHz fLOin = 980 MHz PLOin = –5 dBm TA = +25°C fIFin = 150 MHz fLOin = 980 MHz PIFin = –20 dBm TA = +25°C fIFin = 150 MHz fLOin = 980 MHz PIFin = –20 dBm VCC = 2.8 V CONVERSION GAIN vs. LOCAL INPUT POWER Conversion Gain CG (dB) Local Input Power PLOin (dBm) RF OUTPUT POWER vs. IF INPUT POWER RF Output Power PRFout (dBm) IF Input Power PIFin (dBm) CONVERSION GAIN vs. LOCAL INPUT POWER Conversion Gain CG (dB) Local Input Power PLOin (dBm) RF OUTPUT POWER vs. IF INPUT POWER RF Output Power PRFout (dBm) IF Input Power PIFin (dBm)

Data Sheet P15106EJ2V0DS14 µµ µµPC8187TB TA = +25°C VCC = 2.7 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm TA = +25°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm TA = +25°C VCC = 3.0 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm TA = +25°C VCC = 3.3 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm)

Data Sheet P15106EJ2V0DS 15 µµ µµPC8187TB –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = –40°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm TA = +25°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm TA = +85°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 980 MHz PLOin = –5 dBm RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm)

Data Sheet P15106EJ2V0DS16 µµ µµPC8187TB –60 –50 –40 –30 –20 –10 –45 –40 –600 –90 –80 –70 –60 –50 –60 –50 –40 –30 –20 0–10100 200 300 400 600500 500 1 000 1 500 2 000 2 500 3 000 –20 –30 –40 –50 –60 –70 –80–60 –50 –40 –30 –20 –10 0500 1 000 1 500 2 000 2 500 3 000 –35 –30 –25 –20 –15 –10 –50 –40 –30 –20 –10 –40 –30 –20 fIFin = 150 MHz VCC = 2.7 to 3.3 V fLOin = 980 MHz VCC = 2.7 to 3.3 V fLOin = 980 MHz VCC = 2.7 to 3.3 V PIFin = –20 dBm VCC = 2.8 V PLOin = –5 dBm VCC = 2.8 V PLOin = –5 dBm VCC = 2.8 V –80 –70 –60 –50 –40 –30 –20 LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY Local Leakage at RF Pin LOrf (dBm) Local Input Frequency fLOin (MHz) Local Leakage at RF Pin LOrf (dBm) Local Input Power PLOin (dBm) Local Leakage at IF Pin LOif (dBm) Local Input Frequency fLOin (MHz) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT POWER Local Leakage at IF Pin LOif (dBm) Local Input Power PLOin (dBm) IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY IF Leakage at RF Pin IFrf (dBm) IF Input Frequency fIFin (MHz) IF LEAKAGE AT RF PIN vs. IF INPUT POWER IF Leakage at RF Pin IFrf (dBm) IF Input Power PIFin (dBm) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT POWER

Data Sheet P15106EJ2V0DS 17 µµ µµPC8187TB 11.2 fRFout = 1.9 GHz –30 –20 –10 0 10 –30 –20 –10 0 10–30 –20 –10 0 10 –30 –20 –10 0 10 –30 –20 –10 –30–10 –10 –20 –10 TA = –40°C TA = +25°C VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V VCC = 2.8 V TA = –40°C VCC = 3.0 VVCC = 3.3 V VCC = 2.7 V VCC = 2.8 V TA = +25°CTA = +85°C TA = +85°C fIFin = 150 MHz fLOin = 1 750 MHz PLOin = –5 dBm VCC = 2.8 V fIFin = 150 MHz fLOin = 1 750 MHz PLOin = –5 dBm TA = +25°C fIFin = 150 MHz fLOin = 1 750 MHz PIFin = –20 dBm VCC = 2.8 V fIFin = 150 MHz fLOin = 1 750 MHz PIFin = –20 dBm TA = +25°C CONVERSION GAIN vs. LOCAL INPUT POWER Conversion Gain CG (dB) Local Input Power PLOin (dBm) RF OUTPUT POWER vs. IF INPUT POWER CONVERSION GAIN vs. LOCAL INPUT POWER RF OUTPUT POWER vs. IF INPUT POWER RF Output Power PRFout (dBm) IF Input Power PIFin (dBm) Conversion Gain CG (dB) Local Input Power PLOin (dBm) RF Output Power PRFout (dBm) IF Input Power PIFin (dBm)

Data Sheet P15106EJ2V0DS18 µµ µµPC8187TB –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 2.7 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm TA = +25°C VCC = 3.0 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm TA = +25°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm TA = +25°C VCC = 3.3 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER

Data Sheet P15106EJ2V0DS 19 µµ µµPC8187TB –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +85°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = –40°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 1 750 MHz PLOin = –5 dBm RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER

Data Sheet P15106EJ2V0DS20 µµ µµPC8187TB PLOin = –5 dBm VCC = 2.8 V PLOin = –5 dBm VCC = 2.8 V PIFin = –20 dBm VCC = 2.8 V fLOin = 1 750 MHz fLOin = 1 750 MHz VCC = 2.7 to 3.3 V fIFin = 150 MHz VCC = 2.7 to 3.3 V –40 –30 –20 –10 0 –70 –60 –50 –40 –30 –20 –10 –90 –80 –70 –60 –50 –40 –30 –20 –800 500 1 000 1 500 2 000 2 500 3 000 0 100 200 300 400 500 600 500 1 000 1 500 2 000 2 500 3 000 –60 –50 –40 –30 –20 –10 –10 –15 –20 –25 –30 –35 –40 –45 –50 –10 –15 –20 –25 –30 –70 –60 –50 –40 –30 –20 VCC = 3.0 V VCC = 3.3 V VCC = 2.7 to 2.8 V LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY Local Leakage at RF Pin LOrf (dBm) Local Leakage at RF Pin LOrf (dBm) Local Input Frequency fLOin (MHz) LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT POWER Local Input Power PLOin (dBm) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY Local Leakage at IF Pin LOif (dBm) Local Leakage at IF Pin LOif (dBm) Local Input Frequency fLOin (MHz) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT POWER Local Input Power PLOin (dBm) IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY IF Leakage at RF Pin IFrf (dBm) IF Input Frequency fIFin (MHz) IF Leakage at RF Pin IFrf (dBm) IF Input Power PIFin (dBm) IF LEAKAGE AT RF PIN vs. IF INPUT POWER

Data Sheet P15106EJ2V0DS 21 µµ µµPC8187TB 11.3 fRFout = 2.4 GHz fIFin = 150 MHz fLOin = 2 250 MHz PIFin = –20 dBm TA = +25°C fIFin = 150 MHz fLOin = 2 250 MHz PIFin = –20 dBm VCC = 2.8 V fIFin = 150 MHz fLOin = 2 250 MHz PLOin = –5 dBm TA = +25°C fIFin = 150 MHz fLOin = 2 250 MHz PLOin = –5 dBm VCC = 2.8 V –30 –20 –10 0 10–30 –20 –10 0 10 –30 –20 –10 0 10–30 –20 –10 0 10 –30 –20 –10 –30–10 –10 –20 –10 VCC = 2.7 V VCC = 2.8 V VCC = 3.0 VVCC = 3.3 VVCC = 3.3 V VCC = 3.0 V VCC = 2.8 V VCC = 2.7 V TA = +85°C TA = –40°C TA = +25°CTA = +85°C TA = –40°C TA = +25°C Conversion Gain CG (dB) Local Input Power PLOin (dBm) RF Output Power PRFout (dBm) IF Input Power PIFin (dBm) Conversion Gain CG (dB) Local Input Power PLOin (dBm) RF Output Power PRFout (dBm) IF Input Power PIFin (dBm) CONVERSION GAIN vs. LOCAL INPUT POWER RF OUTPUT POWER vs. IF INPUT POWER CONVERSION GAIN vs. LOCAL INPUT POWER RF OUTPUT POWER vs. IF INPUT POWER

Data Sheet P15106EJ2V0DS22 µµ µµPC8187TB –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 3.3 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 3.0 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 2.7 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER

Data Sheet P15106EJ2V0DS 23 µµ µµPC8187TB –30 –20 –10 0 10–80 –70 –60 –50 –40 –30 –20 –10 TA = +25°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm –30 –20 –10 0 10 –30 –20 –10 0 10 –80 –80 –70 –60 –40 –30 –20 –10 –70 –60 –50 –40 –30 –20 –10 TA = –40°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm TA = +85°C VCC = 2.8 V fIFin1 = 150 MHz fIFin2 = 151 MHz fLOin = 2 250 MHz PLOin = –5 dBm –50 RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER RF OUTPUT POWER OF EACH TONE, IM 3 vs. IF INPUT POWER

Data Sheet P15106EJ2V0DS24 µµ µµPC8187TB PLOin = –5 dBm VCC = 2.8 V PLOin = –5 dBm VCC = 2.8 V PIFin = –20 dBm VCC = 2.8 V fLOin = 2 250 MHz VCC = 2.7 to 3.3 V fLOin = 2 250 MHz fIFin = 150 MHz VCC = 2.7 to 3.3 V VCC = 2.7 to 2.8 V VCC = 3.0 V VCC = 3.3 V 0 500 1 000 1 500 2 000 2 500 3 000–60 –50 –40 –30 –20 –10 –80 –70 –60 –50 –40 –30 –20 –10 0 500 1 000 1 500 2 000 2 500 3 000–50 –45 –40 –35 –30 –25 –20 –15 –10 –80 –70 –60 –50 –40 –30 –20 0 100 200 300 400 500 600–30 –25 –20 –15 –10 –60 –50 –40 –30 –20 –10 Local Leakage at RF Pin LOrf (dBm) Local Input Frequency fLOin (MHz) LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT POWER Local Input Power PLOin (dBm) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY Local Leakage at IF Pin LOif (dBm) Local Leakage at RF Pin LOrf (dBm)Local Leakage at IF Pin LOif (dBm) Local Input Frequency fLOin (MHz) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT POWER Local Input Power PLOin (dBm) IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY IF Leakage at RF Pin IFrf (dBm) IF Input Frequency fIFin (MHz) IF LEAKAGE AT RF PIN vs. IF INPUT POWER IF Leakage at RF Pin IFrf (dBm) IF Input Power PIFin (dBm) LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY

Data Sheet P15106EJ2V0DS 25 µµ µµPC8187TB 12. S-PARAMETERS FOR EACH PORT (VCC = VRFout = 2.8 V) (The parameters are monitored at DUT pins) LO port S11 REF Z

1.0 Units

200.0 mUnits/ 22.762 Ω –104.25 Ω START STOP

0.100000000 GHz

3.100000000 GHz

1.0 GHz

1.75 GHz

2.25 GHz

Z 200.0 mUnits/ 518.97 Ω –321.09 Ω START STOP

1.000000000 GHz

150.0 MHz

RF port (without matching) S22 REF Z 200.0 mUnits/ 51.172 Ω –252.0 Ω START STOP

850.0 MHz

1.9 GHz

2.4 GHz

Data Sheet P15106EJ2V0DS26 µµ µµPC8187TB 13. S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VRFout = 2.8 V) −− −− ON EVALUATION BOARD −− −− (S22 data are monitored at RF connector on board)

0.83 GHz (matched in test circuit 1)

Z 200.0 mUnits/ 62.424 Ω –9.7871 Ω START STOP

0.330000000 GHz

1.330000000 GHz

C D S22 REF 0.0 dB 10.0 dB –24.939 dB START STOP

1.400000000 GHz

2.400000000 GHz

C D MARKER 1

830.0 MHz

1.9 GHz (matched in test circuit 2)

Z 200.0 mUnits/ 51.719 Ω 5.6523 Ω START STOP C D MARKER 1 S REF 0.0 dB 10.0 dB –17.772 dB START STOP C D MARKER 1

Data Sheet P15106EJ2V0DS 27 µµ µµPC8187TB

2.4 GHz (matched in test circuit 3)

Z 200.0 mUnits/ 41.41 Ω –3.2695 Ω START STOP

1.900000000 GHz

2.900000000 GHz

C D MARKER 1 REF 0.0 dB 10.0 dB –20.203 dB START STOP C D MARKER 1

Data Sheet P15106EJ2V0DS28 µµ µµPC8187TB 14. PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 2.0±0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1±0.1 1.25±0.1 0.1 MIN.

Data Sheet P15106EJ2V0DS 29 µµ µµPC8187TB 15. NOTE ON CORRECT USE (1) Observe precautions for handling because of electrostatic sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Connect a bypass capacitor to the V CC pin. (4) Connect a matching circuit to the RF output pin. (5) The DC cut capacitor must be each attached to the input and output pins. 16. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and condi- tions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: NoneNote VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Count: 1, Exposure limit: NoneNote WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P15106EJ2V0DS30 µµ µµPC8187TB [MEMO]

Data Sheet P15106EJ2V0DS 31 µµ µµPC8187TB [MEMO]

µµ µµPC8187TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES M8E 00. 4 The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).