UPC8106TB NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUITS µµµµPC8106TB, µµµµPC8109TB SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES Document No. P12770EJ2V0DS00 (2nd edition) Date Published April 1999 N CP(K) Printed in Japan DATA SHEET 1997, 1999©

DESCRIPTION

The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESAT TM III silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

  • Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz
  • Supply voltage : V CC = 2.7 to 5.5 V
  • High-density surface mounting : 6-pin super minimold package
  • Low current consumption : I CC = 9 mA TYP. @ µPC8106TB ICC = 5 mA TYP. @ µPC8109TB
  • Minimized carrier leakage : Due to double balanced mixer
  • Built-in power save function APPLICATION
  • Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)

ORDERING INFORMATION

Part Number Markings Product Type Package Supplying Form µPC8106TB-E3 C2D High IP 3 µPC8109TB-E3 C2G Low current consumption 6-pin super minimold Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perforation side. QTY 3 kp/Reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8106TB, µPC8109TB) Caution Electro-static sensitive devices

Data Sheet P12770EJ2V0DS002 µµµµPC8106TB, µµµµPC8109TB PIN CONNECTIONS Pin No. Pin Name

1 IFinput

3 LOinput

6 RFoutput

SERIES PRODUCTS (T A = +25 °°°°C, VCC = VPS = VRFout = 3.0 V, ZL = ZS = 50 ΩΩΩΩ ) TYPE PRODUCT NAME V CC (V) ICC (mA) CG1 (dB) CG2 (dB) PO(sat)1 (dBm) PO(sat)2 (dBm) OIP31 (dBm) OIP32 (dBm) High IP3 µPC8106TB 2.7 to 5.5 9 9 7 −2 −4 +5.5 +2.0 Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTER- ISTICS for the test conditions. BLOCK DIAGRAM (FOR THE µµµµPC8106TB AND µµµµPC8109TB) LO input IF input RF output PS VCCGND (Top view) (Top view) Marking is an example of PC8106TB. (Bottom view) C 2 D µ

Data Sheet P12770EJ2V0DS00 3 µµµµPC8106TB, µµµµPC8109TB SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS) PHS, DECT TX ÷N PLL RX PA I Q SW DEMO. Q I Phase shifter 90° PC8106TBµ VCO PLL Analog cellular telephone TX ÷N PLL RX PA SW DEMO. PC8109TBµ PLL MOD. FM VCO

Data Sheet P12770EJ2V0DS004 µµµµPC8106TB, µµµµPC8109TB PIN FUNCTIONS (FOR THE µµµµPC8106TB AND µµµµPC8109TB) Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Explanation Equivalent Circuit 1 IFinput − 1.3 This pin is IF input to double balanced mixer (DBM). The input is designed as high impedance. The circuit contri- butes to suppress spurious signal. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. For above reason, double balanced mixer is adopted. 2G N D 0 − GND pin. Ground pattern on the board should be formed as wide as possible. Track Length should be kept as short as possible to minimize ground impedance. 3 LOinput − 2.4 Local input pin. Recommendable input level is −10 to 0 dBm. 5V CC 2.7 to 5.5 − Supply voltage pin.

6 RFoutput Same bias

− This pin is RF output from DBM. This pin is designed as open collector. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. 4P S V CC /GND − Power save control pin. Bias controls operation as follows. VCC GND Note Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V. Pin bias Control VCC Operation GND Power Save

Data Sheet P12770EJ2V0DS00 5 µµµµPC8106TB, µµµµPC8109TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Rating Unit Supply Votage V CC TA = +25 °C, Pin 5 and 6 6.0 V PS pin Input Voltage V PS TA = +25 °C 6.0 V Power Dissipation of Package PD Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85 °C 200 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature T stg −55 to +150 °C Maximum Input Power P in +10 dBm RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Note Supply Voltage V CC 2.7 3.0 5.5 V The same voltage should be supplied to pin 5 and 6 Operating Ambient Temperature TA −40 +25 +85 °C Local Input Level P LOin −10 −50 d B m Z S = 50 Ω (without matching) RF Output Frequency f RFout 0.4 − 2.0 GHz With external matching circuit IF Input Frequency f IFin 100 − 400 MHz

ELECTRICAL CHARACTERISTICS

(TA = +25 °C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −−−−5 dBm, and VPS ≥≥≥≥ 2.7 V unless otherwise specified) µPC8106TB µPC8109TB Parameter Symbol Conditions Unit Circuit Current I CC No signal 4.5 9 13.5 2.5 5 8.0 mA Circuit Current in Power- save Mode ICC (PS) V PS = 0 V −− 10 −− 10 µA Conversion Gain 1 CG1 f RFout = 0.9 GHz, PIFin = −30 dBm 6 9 12 3 6 9 dB Conversion Gain 2 CG2 f RFout = 1.9 GHz, PIFin = −30 dBm 4 7 10 1 4 7 dB Maximum RF Output Power 1 PO(sat)1f RFout = 0.9 GHz, PIFin = 0 dBm −4 −2 −− 7.5 −5.5 − dBm Maximum RF Output Power 2 PO(sat)2f RFout = 1.9 GHz, PIFin = 0 dBm −6.5 −4 −− 10 −7.5 − dBm

Data Sheet P12770EJ2V0DS006 µµµµPC8106TB, µµµµPC8109TB OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25 °C, VCC = VRFout = 3.0 V, PLOin = −−−−5 dBm, and VPS ≥≥≥≥ 2.7 V unless otherwise mentioned) Reference Value Parameter Symbol Conditions µPC8106TB µPC8109TB Unit OIP31f IFin1 = 240.0 MHz f RFout = 0.9 GHz +5.5 +1.5 dBmOutput Third-Order Distortion Intercept Point OIP32f IFin2 = 240.4 MHz f RFout = 1.9 GHz +2.0 −1.0 Third-Order Intermodulation Distortion 1 IM31f RFout = 0.9 GHz −31 −29 dBc Third-Order Intermodulation Distortion 2 IM32 fIFint = 240.0 MHz fIFin2 = 240.4 MHz PIFin = −20 dBm fRFout = 1.9 GHz −30 −28 dBc SSB Noise Figure SSBNF f RFout = 0.9 GHz, fIFin = 240 MHz 8.5 8.5 dB Rise time T PS(rise) VPS : GND → VCC 2.0 2.0 µsPower Save Response Time Fall time T PS(fall) VPS : VCC → GND 2.0 2.0 µs APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSE ONLY (TA = +25 °C, VCC = VPS = VRFout = 3.0 V, fIFin = 130 MHz, fLOin = 1630 MHz, PLOin = −−−−5 dBm) Reference Value Parameter Symbol Conditions µPC8106TB Unit Conversion Gain CG f RFout = 1.5 GHz, with application circuit example 7d B Maximum RF Output Power P O(sat) fRFout = 1.5 GHz, with application circuit example −3.5 dBm

Data Sheet P12770EJ2V0DS00 7 µµµµPC8106TB, µµµµPC8109TB TEST CIRCUIT 1 (RF = 900 MHz, for the µµµµPC8106TB and µµµµPC8109TB) C 1 100 pF1 C 2 100 pF Spectrum Analyzer 1 000 pF 1 pF C 5C 6 C 4 1 000 pF 6.8 nH VCC RFoutput PS IFinput GND LOinput 50 Ω PLoin = –5 dBm RF = 900 MHz, matched VCC *C 3 Signal Generator 50 Ω Signal Generator 50 Ω 10 000 pF L * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD IFIN PC8106TB LO IN P/S 1 000 pF C 6 C 3 6.8 nH µ 1 pF C 5 1 000 pF 100 pF C 1 C 4 10 000 pF 100 pF C 2 RF Connector → 1 000 pF L RF OUT

Data Sheet P12770EJ2V0DS008 µµµµPC8106TB, µµµµPC8109TB COMPONENT LIST Form Symbol Value C 1, C2 100 pF C 3, C6 1 000 pF Chip capacitor C 5 1 pF Through capacitor C 4 10 000 pF Chip inductor L 6.8 nH Note Note 6.8 nH: Murata Mfg. Co., Ltd. LQP31A6N8J04 Notes on the board 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes 5. C 6 is for RF short on the board pattern

Data Sheet P12770EJ2V0DS00 9 µµµµPC8106TB, µµµµPC8109TB TEST CIRCUIT 2 (RF = 1.9 GHz, for the µµµµPC8106TB and µµµµPC8109TB) C 1 100 pF1 C 2 100 pF 1 000 pF C 5 C 6 10 000 pF C 4 C 3 1 000 pF 100 nH VCC RFoutput PS IFinput GND LOinput PLoin = –5 dBm 2.5 pF RF = 1.9 GHz, matched Strip line VCC Spectrum Analyzer 50 Ω Signal Generator 50 Ω Signal Generator 50 Ω L * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD IFIN PC8106TB LO IN P/S C 6 C 3 µ C 5 1 000 pF 1 000 pF 100 pF C 1 C 4 10 000 pF 100 pF C 2 RF Connector → 1 000 pF 0.5 pF2 pF RF OUT 100 nH

Data Sheet P12770EJ2V0DS0010 µµµµPC8106TB, µµµµPC8109TB COMPONENT LIST Form Symbol Value C 1, C2 100 pF C 3, C6 1 000 pF Chip capacitor C 5 2.5 pF (2.0 pF, 0.5 pF parallel) Through capacitor C 4 10 000 pF Chip inductor L 100 nH Note Note 100 nH: Murata Mfg. Co., Ltd. LQN1AR10J(K)04 Notes on the board 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes

Data Sheet P12770EJ2V0DS00 11 µµµµPC8106TB, µµµµPC8109TB APPLICATION CIRCUIT EXAMPLE (RF = 1.5 GHz, for the µµµµPC8106TB and µµµµPC8109TB) C 1 100 pF1 C 2 100 pF 6 p F C 5 C 6 10 000 pF C 4 C 3 1 000 pF 150 nH VCC RFoutput PS IFinput GND LOinput PLoin = –5 dBm 3.5 pF RF = 1.5 GHz, matched 2.7 nH VCC Spectrum Analyzer 50 Ω Signal Generator 50 Ω Signal Generator 50 Ω * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD IFIN PC8106TB LO IN P/S C 6 C 3 µ C 5 1 000 pF 6 pF 100 pF C 1 C 4 10 000 pF 100 pF C 2 RF Connector → 1 000 pF 0.5 pF3 pF RF OUT 150 nH 2.7 nH

Data Sheet P12770EJ2V0DS0012 µµµµPC8106TB, µµµµPC8109TB COMPONENT LIST Form Symbol Value C 1, C2 100 pF C 3 1 000 pF C 5 3.5 pF (3.0 pF, 0.5 pF parallel) Chip capacitor C 6 6 pF Through capacitor C 4 10 000 pF L1 150 nH Note 1 Chip inductor L2 2.7 nH Note 2 Notes 1. 150 nH: TOKO Co., Ltd. LL2012-FR15 2. 2.7 nH : TOKO Co., Ltd. LL2012-F2N7S Notes on the board 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes NOTICE The test circuits and board pattern on data sheet are for performance evaluation use only. (They are not recommended circuits.) In the case of actual design-in, matching circuit should be determined using S parameter of desired frequency in accordance to actual mounting pattern. For external circuits of the ICs, following Application Note is also available. µPC8106, µPC8109 Application Note (Document No. P13683E)

Data Sheet P12770EJ2V0DS00 13 µµµµPC8106TB, µµµµPC8109TB TYPICAL CHARACTERISTICS (T A = +25°C, VCC = VRFout) with TEST CIRCUIT 1 or 2, according to the operating frequency, unless otherwise specified CIRCUIT CURRENT vs. SUPPLY VOLTAGE ( PC8106TB)µ 24 316 58 7 Supply Voltage VCC (V) No signal VCC = VPS Circuit Current ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE ( PC8109TB)µ 24 316 58 7 Supply Voltage VCC (V) No signal VCC = VPS Circuit Current ICC (mA) VCC = 5.5 V VCC = 3.0 V CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE ( PC8106TB)µ 3215 46 PS Pin Input Voltage VPS (V) Circuit Current ICC (mA) VCC = 5.5 V VCC = 3.0 V CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE ( PC8109TB)µ 3215 46 PS Pin Input Voltage VPS (V) Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ( PC8106TB)µ –600 0–20–40 4020 100 8060 Operating Ambient Temperature TA (˚C) Circuit Current ICC (mA) No signal VCC = VPS = 3.0 V CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ( PC8109TB)µ –600 0–20–40 4020 100 8060 Operating Ambient Temperature TA (˚C) Circuit Current ICC (mA) No signal VCC = VPS = 3.0 V

Data Sheet P12770EJ2V0DS0014 µµµµPC8106TB, µµµµPC8109TB S-PARAMETERS FOR EACH PORT (V CC = VPS = VRFout = 3.0 V) – µµµµPC8106TB, µµµµPC8109TB in common – (THE parameters are monitored at DUT pins.) 2 12 MARKER 1

1.15 GHz

1.65 GHz

900 MHz

1.9 GHz

240 MHz

START 0.4 GHz START 0.4 GHzSTOP 1.9 GHz STOP 1.9 GHz START 0.1 GHz STOP 0.4 GHz S11 Z REF 1.0 Units 2 200.0 mUnits/ 21.201 Ω –53.748 Ω hp S22 Z REF 1.0 Units 2 200.0 mUnits/ 26.961 Ω –87.312 Ω hp S11 Z REF 1.0 Units 1 200.0 mUnits/ 194.16 Ω –579.53 Ω hp

Data Sheet P12770EJ2V0DS00 15 µµµµPC8106TB, µµµµPC8109TB S-PARAMETERS FOR MATCHED RF OUTPUT (V CC = VPS = VRFout = 3.0 V) – with TEST CIRCUITS 1 and 2 (µµµµPC8106TB, µµµµPC8109TB in common) – (S22 data are monitored at RF connector on board.) 1 1 START 100 MHz START 100 MHzSTOP 3 000 MHz STOP 3 000 MHz

900 MHz (LC-matched) in test circuit 1

REF 0.0 dB 1 10.0 dB/ –19.567 dB hp START 100 MHz STOP 3 000 MHz START 100 MHz STOP 3 000 MHz MARKER 1

1.9 GHz (matched) in test circuit 2

REF 0.0 dB 1 10.0 dB/ –15.213 dB hp 1 1 S22 REF 1.0 Units 1 200.0 mUnits/ 36.59 Ω 2.9355 Ω hp S22 REF 1.0 Units 1 200.0 mUnits/ 58.191 Ω –4.1191 Ω hp

Data Sheet P12770EJ2V0DS0016 µµµµPC8106TB, µµµµPC8109TB S-PARAMETERS FOR MATCHED RF OUTPUT (V CC = VPS = VRFout = 3.0 V) – with application circuit example – (S22 data are monitored at RF connector on board.) START 1.0 GHz STOP 2.0 GHz

1.5 GHz (matched) in application circuit example

REF 0.0 dB 1 10.0 dB/ –20.901 dB hp START 1.0 GHz STOP 2.0 GHz MARKER 1

1.5 GHz

C D C D S22 Z REF 1.0 Units 1 200.0 mUnits/ 59.086 Ω –3.873 Ω hp

Data Sheet P12770EJ2V0DS00 17 µµµµPC8106TB, µµµµPC8109TB CONVERSION GAIN vs. SUPPLY VOLTAGE ( PC8106TB)µ 34 5 6 Supply Voltage VCC (V) VCC = VPS Conversion Gain CG (dB) CONVERSION GAIN vs. SUPPLY VOLTAGE ( PC8109TB)µ 34 5 6 Supply Voltage VCC (V) VCC = VPS Conversion Gain CG (dB) CONVERSION GAIN vs. LOCAL INPUT LEVEL ( PC8106TB)µ –250 –5 0 5 10 15–20 –15 –10 Local Input Level PLOin (dBm) Conversion Gain CG (dB) fRFout = 900 MHz fRFout = 1.9 GHz fRFout = 900 MHz fRFout = 1.9 GHz fRFout = 900 MHz fLOin = 1140 MHz VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT LEVEL ( PC8106TB) µ –25–10 –5 0 5 10 15–20 –15 –10 Local Input Level PLOin (dBm) Conversion Gain CG (dB) fRFout = 1.9 GHz fLOin = 1.66 GHz VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT LEVEL ( PC8109TB) µ –25–10 –5 0 5 10 15–20 –15 –10 Local Input Level PLOin (dBm) Conversion Gain CG (dB) fRFout = 1.9 GHz fLOin = 1.66 GHz VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT LEVEL ( PC8109TB) µ –250 –5 0 5 10 15–20 –15 –10 Local Input Level PLOin (dBm) Conversion Gain CG (dB) fRFout = 900 MHz fLOin = 1140 MHz VCC = VPS = 3.0 V

Data Sheet P12770EJ2V0DS0018 µµµµPC8106TB, µµµµPC8109TB RF OUTPUT LEVEL AND IM 3 vs. IF INPUT LEVEL ( PC8106TB)µ –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 RF OUTPUT LEVEL AND IM 3 vs. IF INPUT LEVEL ( PC8109TB)µ –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 IF Input Level PIFin (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 RF OUTPUT LEVEL AND IM 3 vs. IF INPUT LEVEL ( PC8109TB)µ –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 IF Input Level PIFin (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 IF Input Level PIFin (dBm) RF OUTPUT LEVEL AND IM 3 vs. IF INPUT LEVEL ( PC8106TB)µ –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 IF Input Level PIFin (dBm) RF OUTPUT LEVEL AND IM 3 vs. IF INPUT LEVEL ( PC8109TB)µ –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 100 IF Input Level PIFin (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 RF OUTPUT LEVEL AND IM 3 vs. IF INPUT LEVEL ( PC8106TB)µ –80 –70 –60 –50 –40 –30 –10 –20 –40 –20–30 –10 100 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 IF Input Level PIFin (dBm)

Data Sheet P12770EJ2V0DS00 19 µµµµPC8106TB, µµµµPC8109TB LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY ( PC8106TB)µ 0–50 –40 –30 –20 –10 1.5 2 2.5 3 3.50.5 1 Local Input Frequency fLOin (GHZ) Local Leakage at IF Pin LOif (dBm) fRFout = 1.9 GHz PLOin = –5 dBm VCC = VPS = 3.0 V IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY ( PC8106TB) µ 0–50 –40 –30 –20 –10 300 400 500 600100 200 IF Input Frequency fIFin (MHZ) IF Leakage at RF Pin IFrf (dBm) fRFout = 1.9 GHz fLOin = 1.66 GHz PLOin = –5 dBm fIFin = –30 dBm VCC = VPS = 3.0 V LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY ( PC8106TB) µ 0–50 –40 –30 –20 –10 1.5 2 2.5 3 3.50.5 1 Local Input Frequency fLOin (GHZ) Local Leakage at RF Pin LOrf (dBm) fRFout = 1.9 GHz PLOin = –5 dBm VCC = VPS = 3.0 V

Data Sheet P12770EJ2V0DS0020 µµµµPC8106TB, µµµµPC8109TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 1.25 –0.1 2.1 –0.1 0.65 0.65 1.3 2.0 –0.2 0.1 MIN. 0.7 0.9 –0.1 0 to 0.1 0.2 +0.1 –0 0.15 +0.1

Data Sheet P12770EJ2V0DS00 21 µµµµPC8106TB, µµµµPC8109TB NOTES ON CORRECT USE (1) Observe precutions for handling because of electrostatic sensitive devices. (2) Form a ground pattern wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor to the V CC pin. (5) Connect a matching circuit to the RF output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P12770EJ2V0DS0022 µµµµPC8106TB, µµµµPC8109TB [MEMO]

Data Sheet P12770EJ2V0DS00 23 µµµµPC8106TB, µµµµPC8109TB [MEMO]

µµµµPC8106TB, µµµµPC8109TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

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