UPC8106TB RENESAS | Alldatasheet

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Technical content

Datasheet sections

  • 11.1 Test Circuit
  • 11.2 Test Circuit
  • 11.3 Application Circuit Example
  • 13.1 S-parameters for Each Port −−−− µµµµPC8106TB, µµµµPC8109TB in common −−−−
  • 13.2 S-parameters for Matched RF Output −−−− with test circuits 1 and 2 −−−−
  • 13.3 S-parameters for Matched RF Output −−−− with application circuit example −−−−

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUITS µµµµPC8106TB, µµµµPC8109TB SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES Document No. P12770EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Printed in Japan DATA SHEET The mark shows major revised points. 1997, 2000©

DESCRIPTION

The µPC8106TB and µPC8109TB are silicon monolithic integrated circuits designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESAT TM III silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

  • Recommended operating frequency : fRFout = 0.4 to 2.0 GHz, fIFin = 100 to 400 MHz
  • Supply voltage : V CC = 2.7 to 5.5 V
  • High-density surface mounting : 6-pin super minimold package
  • Low current consumption : I CC = 9 mA TYP. @ µPC8106TB ICC = 5 mA TYP. @ µPC8109TB
  • Minimized carrier leakage : Due to double balanced mixer
  • Built-in power save function APPLICATION
  • Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)

ORDERING INFORMATION

Part Number Package Marking Supplying Form Product Type µPC8106TB-E3 C2D High IP 3 µPC8109TB-E3 6-pin super minimold C2G Embossed tape 8 mm wide. Pin 1, 2, 3 face the tape perforation side. Qty 3 kpcs/reel. Low current consumption Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order: µPC8106TB, µPC8109TB). Caution Electro-static sensitive devices

Data Sheet P12770EJ3V0DS00 3 µµµµPC8106TB, µµµµPC8109TB 1. PIN CONNECTIONS µPC8106TB, µPC8109TB in common Pin No. Pin Name

1 IFinput

3 LOinput

6 RFoutput

  1. PRODUCT LINE-UP (TA = +25°°°°C, VCC = VPS = VRFout = 3.0 V, ZS = ZL = 50 ΩΩΩΩ ) CG (dB) Part Number ICC (mA) fRFout (GHz) @RF 0.9 GHz Note @RF 1.9 GHz @RF 2.4 GHz µPC8106TB 9 0.4 to 2.0 9 7 − µPC8109TB 5 0.4 to.2.0 6 4 − µPC8163TB 16.5 0.8 to 2.0 9 5.5 − µPC8187TB 15 0.8 to 2.5 11 11 10 PO(sat) (dBm) OIP 3 (dBm) Part Number @RF 0.9 GHz Note @RF 1.9 GHz @RF 2.4 GHz @RF 0.9 GHz Note @RF 1.9 GHz @RF 2.4 GHz µPC8187TB +4 +2.5 +1 +10 +10 +8.5 Note fRFout = 0.83 GHz @ µPC8163TB and µPC8187TB Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. To know the associated product, please refer to each latest data sheet. 3. INTERNAL BLOCK DIAGRAM (for the µµµµPC8106TB and µµµµPC8109TB) LOinput IFinput RFoutput PS VCCGND (Top view) (Top View) (Bottom View) Example marking is for PC8106TBµ C2D

Data Sheet P12770EJ3V0DS004 µµµµPC8106TB, µµµµPC8109TB 4. SYSTEM APPLICATION EXAMPLE (schematics of IC location in the system) WIRELESS TRANSCEIVER TX ÷N PLL RX PA I Q SW DEMOD. Q I Phase shifter 90° PC8106TB, PC8109TB µµ VCO PLL

Data Sheet P12770EJ3V0DS00 5 µµµµPC8106TB, µµµµPC8109TB 5. PIN EXPLANATION (for the µµµµPC8106TB and µµµµPC8109TB) Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Explanation Equivalent Circuit 1 IFinput − 1.3 This pin is IF input to double balanced mixer (DBM). The input is designed as high impedance. The circuit contri- butes to suppress spurious signal. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. For above reason, double balanced mixer is adopted. 2G N D G N D − GND pin. Ground pattern on the board should be formed as wide as possible. Track Length should be kept as short as possible to minimize ground impedance. 3 LOinput − 2.4 Local input pin. Recommendable input level is −10 to 0 dBm. 5V CC 2.7 to 5.5 − Supply voltage pin.

6 RFoutput Same bias

− This pin is RF output from DBM. This pin is designed as open collector. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. 4P S V CC or GND − Power save control pin. Bias controls operation as follows. VCC GND Note Each pin voltage is measured at VCC = VPS = VRFout = 3.0 V. Pin bias Control VCC Operation GND Power Save

Data Sheet P12770EJ3V0DS006 µµµµPC8106TB, µµµµPC8109TB 6. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Rating Unit Supply Votage V CC TA = +25°C, Pin 5 and 6 6.0 V PS pin Input Voltage V PS TA = +25°C 6.0 V Package Power Dissipation P D Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature T stg −55 to +150 °C Maximum Input Power P in +10 dBm 7. RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage V CC 2.7 3.0 5.5 V The same voltage should be supplied to pin 5 and 6 Operating Ambient Temperature TA −40 +25 +85 °C Local Input Power P LOin −10 −50 d B m Z S = 50 Ω (without matching) RF Output Frequency f RFout 0.4 − 2.0 GHz With external matching circuit IF Input Frequency f IFin 100 − 400 MHz 8. ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −−−−5 dBm, and VPS ≥≥≥≥ 2.7 V unless otherwise specified) µPC8106TB µPC8109TB Parameter Symbol Conditions Unit Circuit Current I CC No input signal 4.5 9 13.5 2.5 5 8.0 mA Circuit Current in Power- save Mode ICC(PS) VPS = 0 V −− 10 −− 10 µA Conversion Gain 1 CG1 f RFout = 0.9 GHz, PIFin = −30 dBm 6 9 12 3 6 9 dB Conversion Gain 2 CG2 f RFout = 1.9 GHz, PIFin = −30 dBm 4 7 10 1 4 7 dB Saturated Output Power 1 P O(sat)1f RFout = 0.9 GHz, PIFin = 0 dBm −4 −2 −− 7.5 −5.5 − dBm Saturated Output Power 2 P O(sat)2f RFout = 1.9 GHz, PIFin = 0 dBm −6.5 −4 −− 10 −7.5 − dBm

Data Sheet P12770EJ3V0DS00 7 µµµµPC8106TB, µµµµPC8109TB 9. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = VRFout = 3.0 V, PLOin = −−−−5 dBm, and VPS ≥≥≥≥ 2.7 V unless otherwise mentioned) Reference Value Parameter Symbol Conditions µPC8106TB µPC8109TB Unit OIP31f IFin1 = 240.0 MHz f RFout = 0.9 GHz +5.5 +1.5 dBm3rd Order Distortion Output Intercept Point OIP32f IFin2 = 240.4 MHz f RFout = 1.9 GHz +2.0 −1.0 3rd Order Intermodulation Distortion 1 IM31f RFout = 0.9 GHz −31 −29 dBc 3rd Order Intermodulation Distortion 2 IM32 fIFin1 = 240.0 MHz fIFin2 = 240.4 MHz PIFin = −20 dBm fRFout = 1.9 GHz −30 −28 dBc SSB Noise Figure SSB • NF f RFout = 0.9 GHz, fIFin = 240 MHz 8.5 8.5 dB Rise time T PS(rise) VPS : GND → VCC 2.0 2.0 µsPower Save Response Time Fall time T PS(fall) VPS : VCC → GND 2.0 2.0 µs 10. APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = VPS = VRFout = 3.0 V, fIFin = 130 MHz, fLOin = 1 630 MHz, PLOin = −−−−5 dBm) Reference Value Parameter Symbol Conditions µPC8106TB Unit Conversion Gain CG f RFout = 1.5 GHz, with application circuit example 7d B Saturated Output Power P O(sat) fRFout = 1.5 GHz, with application circuit example −3.5 dBm

Data Sheet P12770EJ3V0DS008 µµµµPC8106TB, µµµµPC8109TB 11. TEST CIRCUIT

11.1 Test Circuit 1 (fRFout = 900 MHz, for the µµµµPC8106TB and µµµµPC8109TB)

6.8 nH VCC RFoutput PS IFinput GND LOinput 50 Ω PLoin = –5 dBm RF = 900 MHz, matched VCC *C 3 Signal Generator 50 Ω Signal Generator 50 Ω 10 000 pF L * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD IFIN PC8106TB LO IN PS 1 000 pF C 6 C 3 6.8 nH µ 1 pF C 5 1 000 pF 100 pF C 1 C 4 10 000 pF 100 pF C 2 RF Connector → 1 000 pF L RF OUT

Data Sheet P12770EJ3V0DS00 9 µµµµPC8106TB, µµµµPC8109TB COMPONENT LIST Form Symbol Value C 1, C2 100 pF C 3, C6 1 000 pF Chip capacitor C 5 1 pF Through capacitor C 4 10 000 pF Chip inductor L 6.8 nH Note Note 6.8 nH: Murata Mfg. Co., Ltd. LQP31A6N8J04 EVALUATION BOARD CHARACTERS (1) Double-sided copper clad 35 × 42 × 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) : Through holes (5) C6 is for RF short on the board pattern

Data Sheet P12770EJ3V0DS0010 µµµµPC8106TB, µµµµPC8109TB 11.2 Test Circuit 2 (fRFout = 1.9 GHz, for the µµµµPC8106TB and µµµµPC8109TB) C 1 100 pF1 C 2 100 pF 1 000 pF C 5 C 6 10 000 pF C 4 C 3 1 000 pF 100 nH VCC RFoutput PS IFinput GND LOinput PLoin = –5 dBm 2.5 pF RF = 1.9 GHz, matched Strip line VCC Spectrum Analyzer 50 Ω Signal Generator 50 Ω Signal Generator 50 Ω L * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD IFIN PC8106TB LO IN PS C 6 C 3 µ C 5 1 000 pF 1 000 pF 100 pF C 1 C 4 10 000 pF 100 pF C 2 RF Connector → 1 000 pF 0.5 pF2 pF RF OUT 100 nH

Data Sheet P12770EJ3V0DS00 11 µµµµPC8106TB, µµµµPC8109TB COMPONENT LIST Form Symbol Value C 1, C2 100 pF C 3, C6 1 000 pF Chip capacitor C 5 2.5 pF (2.0 pF, 0.5 pF parallel) Through capacitor C 4 10 000 pF Chip inductor L 100 nH Note Note 100 nH: Murata Mfg. Co., Ltd. LQN1AR10J(K)04 EVALUATION BOAD CHARACTERS (1) Double-sided copper clad 35 × 42 × 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) : Through holes

Data Sheet P12770EJ3V0DS0012 µµµµPC8106TB, µµµµPC8109TB 11.3 Application Circuit Example (fRFout = 1.5 GHz, for the µµµµPC8106TB and µµµµPC8109TB) C 1 100 pF1 C 2 100 pF 6 p F C 5 C 6 10 000 pF C 4 C 3 1 000 pF 150 nH VCC RFoutput PS IFinput GND LOinput PLoin = –5 dBm 3.5 pF RF = 1.5 GHz, matched 2.7 nH VCC Spectrum Analyzer 50 Ω Signal Generator 50 Ω Signal Generator 50 Ω * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD IFIN PC8106TB LO IN PS C 6 C 3 µ C 5 1 000 pF 6 pF 100 pF C 1 C 4 10 000 pF 100 pF C 2 RF Connector → 1 000 pF 0.5 pF3 pF RF OUT 150 nH 2.7 nH

Data Sheet P12770EJ3V0DS00 13 µµµµPC8106TB, µµµµPC8109TB COMPONENT LIST Form Symbol Value C 1, C2 100 pF C 3 1 000 pF C 5 3.5 pF (3.0 pF, 0.5 pF parallel) Chip capacitor C 6 6 pF Through capacitor C 4 10 000 pF L1 150 nH Note 1 Chip inductor L2 2.7 nH Note 2 Notes 1. 150 nH: TOKO Co., Ltd. LL2012-FR15 2. 2.7 nH : TOKO Co., Ltd. LL2012-F2N7S EVALUATION BOARD CHARACTERS (1) Double-sided copper clad 35 × 42 × 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) : Through holes Caution The test circuits and board pattern on data sheet are for performance evaluation use only. (They are not recommended circuits.) In the case of actual design-in, matching circuit should be determined using S parameter of desired frequency in accordance to actual mounting pattern. For external circuits of the ICs, following Application Note is also available. µPC8106, µPC8109, µPC8163 Application Note (Document No. P13683E)

Data Sheet P12770EJ3V0DS0014 µµµµPC8106TB, µµµµPC8109TB 12. TYPICAL CHARACTERISTICS (TA = +25°C, VCC = VRFout, with test circuit 1 or 2, according to the operating frequency, unless otherwise specified) 12.1 µµµµPC8106TB CIRCUIT CURRENT vs. SUPPLY VOLTAGE 24 316 58 7 Supply Voltage VCC (V) No input signal VCC = VPS Circuit Current ICC (mA) VCC = 5.5 V VCC = 3.0 V CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE 3215 46 PS Pin Input Voltage VPS (V) Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE –600 0–20–40 4020 100 8060 Operating Ambient Temperature TA (˚C) Circuit Current ICC (mA) No input signal VCC = VPS = 3.0 V CONVERSION GAIN vs. SUPPLY VOLTAGE 34 5 6 Supply Voltage VCC (V) VCC = VPS Conversion Gain CG (dB) fRFout = 900 MHz fRFout = 1.9 GHz CONVERSION GAIN vs. LOCAL INPUT POWER –250 –5 0 5 10 15–20 –15 –10 Local Input Power PLOin (dBm) Conversion Gain CG (dB) fRFout = 900 MHz fLOin = 1 140 MHz VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT POWER –25–10 –5 0 5 10 15–20 –15 –10 Local Input Power PLOin (dBm) Conversion Gain CG (dB) fRFout = 1.9 GHz fLOin = 1.66 GHz VCC = VPS = 3.0 V

Data Sheet P12770EJ3V0DS00 15 µµµµPC8106TB, µµµµPC8109TB RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1 440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1 660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 IF Input Power PIFin (dBm) RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER –80 –70 –60 –50 –40 –30 –10 –20 –40 –20–30 –10 100 RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1 630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 IF Input Power PIFin (dBm) LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY 0–50 –40 –30 –20 –10 1.5 2 2.5 3 3.50.5 1 Local Input Frequency fLOin (GHz) Local Leakage at IF Pin LOif (dBm) fRFout = 1.9 GHz PLOin = –5 dBm VCC = VPS = 3.0 V LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY 0–50 –40 –30 –20 –10 1.5 2 2.5 3 3.50.5 1 Local Input Frequency fLOin (GHz) Local Leakage at RF Pin LOrf (dBm) fRFout = 1.9 GHz PLOin = –5 dBm VCC = VPS = 3.0 V IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY 0–50 –40 –30 –20 –10 300 400 500 600100 200 IF Input Frequency fIFin (MHz) IF Leakage at RF Pin IFrf (dBm) fRFout = 1.9 GHz fLOin = 1.66 GHz PLOin = –5 dBm fIFin = –30 dBm VCC = VPS = 3.0 V

Data Sheet P12770EJ3V0DS0016 µµµµPC8106TB, µµµµPC8109TB 12.2 µµµµPC8109TB CIRCUIT CURRENT vs. SUPPLY VOLTAGE 24 316 58 7 Supply Voltage VCC (V) No input signal VCC = VPS Circuit Current ICC (mA) VCC = 5.5 V VCC = 3.0 V CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE 3215 46 PS Pin Input Voltage VPS (V) Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE –600 0–20–40 4020 100 8060 Operating Ambient Temperature TA (˚C) Circuit Current ICC (mA) No input signal VCC = VPS = 3.0 V CONVERSION GAIN vs. SUPPLY VOLTAGE 34 5 6 Supply Voltage VCC (V) VCC = VPS Conversion Gain CG (dB) fRFout = 900 MHz fRFout = 1.9 GHz CONVERSION GAIN vs. LOCAL INPUT POWER –250 –5 0 5 10 15–20 –15 –10 Local Input Power PLOin (dBm) Conversion Gain CG (dB) fRFout = 900 MHz fLOin = 1 140 MHz VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT POWER –25–10 –5 0 5 10 15–20 –15 –10 Local Input Power PLOin (dBm) Conversion Gain CG (dB) fRFout = 1.9 GHz fLOin = 1.66 GHz VCC = VPS = 3.0 V

Data Sheet P12770EJ3V0DS00 17 µµµµPC8106TB, µµµµPC8109TB RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1 440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 10 0 IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1 660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 RF OUTPUT POWER OF EACH TONE, IM3 vs. IF INPUT POWER –40–80 –70 –60 –50 –40 –30 –10 –20 –20–30 –10 100 IF Input Power PIFin (dBm) RF Output Power of Each Tone PRFout(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1 630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V Pout IM3 Remark The graphs indicate nominal characteristics.

Data Sheet P12770EJ3V0DS0018 µµµµPC8106TB, µµµµPC8109TB 13. S-PARAMETERS 13.1 S-parameters for Each Port (VCC = VPS = VRFout = 3.0 V) – µµµµPC8106TB, µµµµPC8109TB in common – (the parameters are monitored at DUT pins.) 2 12 MARKER 1

1.15 GHz

1.65 GHz

900 MHz

1.9 GHz

240 MHz

START 0.4 GHz START 0.4 GHzSTOP 1.9 GHz STOP 1.9 GHz START 0.1 GHz STOP 0.4 GHz S11 Z REF 1.0 Units 2 200.0 mUnits/ 21.201 Ω –53.748 Ω hp S22 Z REF 1.0 Units 2 200.0 mUnits/ 26.961 Ω –87.312 Ω hp S11 Z REF 1.0 Units 1 200.0 mUnits/ 194.16 Ω –579.53 Ω hp

Data Sheet P12770EJ3V0DS00 19 µµµµPC8106TB, µµµµPC8109TB 13.2 S-parameters for Matched RF Output (VCC = VPS = VRFout = 3.0 V) – with test circuits 1 and 2 (µµµµPC8106TB, µµµµPC8109TB in common) – (S22 data are monitored at RF connector on board.) 1 1 START 100 MHz START 100 MHzSTOP 3 000 MHz STOP 3 000 MHz

900 MHz (LC-matched) in test circuit 1

REF 0.0 dB 1 10.0 dB/ –19.567 dB hp START 100 MHz STOP 3 000 MHz START 100 MHz STOP 3 000 MHz MARKER 1

1.9 GHz (matched) in test circuit 2

REF 0.0 dB 1 10.0 dB/ –15.213 dB hp 1 1 S22 REF 1.0 Units 1 200.0 mUnits/ 36.59 Ω 2.9355 Ω hp S22 REF 1.0 Units 1 200.0 mUnits/ 58.191 Ω –4.1191 Ω hp

Data Sheet P12770EJ3V0DS0020 µµµµPC8106TB, µµµµPC8109TB 13.3 S-parameters for Matched RF Output (VCC = VPS = VRFout = 3.0 V) – with application circuit example – (S22 data are monitored at RF connector on board.) START 1.0 GHz STOP 2.0 GHz

1.5 GHz (matched) in application circuit example

REF 0.0 dB 1 10.0 dB/ –20.901 dB hp START 1.0 GHz STOP 2.0 GHz MARKER 1

1.5 GHz

C D C D S22 Z REF 1.0 Units 1 200.0 mUnits/ 59.086 Ω –3.873 Ω hp

Data Sheet P12770EJ3V0DS00 21 µµµµPC8106TB, µµµµPC8109TB 14. PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9–0.1 0.7 0 to 0.1 2.0–0.2 1.3 0.650.65 0.2+0.1 –0.050.15+0.1 –0.05 2.1–0.1 1.25–0.1 0.1 MIN.

Data Sheet P12770EJ3V0DS0022 µµµµPC8106TB, µµµµPC8109TB 15. NOTE ON CORRECT USE (1) Observe precutions for handling because of electrostatic sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor to the V CC pin. (5) Connect a matching circuit to the RF output pin. 16. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P12770EJ3V0DS00 23 µµµµPC8106TB, µµµµPC8109TB [MEMO]

µµµµPC8106TB, µµµµPC8109TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. M8E 00. 4 The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).