UPC8103

UPC8103T NEC | Alldatasheet

Document overview

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Technical content

DESCRIPTION

µPC8103T and µPC8108T are silicon monolithic integrated circuits designed as mixer-oscillator series for pager system. Due to 1 V supply voltage, these ICs are suitable for low voltage pager system. These ICs are packaged in 6 pin mini mold suitable for high-density surface mounting. These ICs are manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials contributes excellent DC, AC perform- ance. Thus, these ICs are utilized as 1 V voltage ICs.

FEATURES

• 1 V supply voltage: V CC = 1.0 V to 2.0 V
• Low current consumption µPC8103T: l CC = 1.0 mA TYP. @ VCC = 1.0 V µPC8108T: l CC = 1.5 mA TYP. @ VCC = 1.0 V
• Wide band operation µPC8103T: f RF = 150 MHz to 330 MHz µPC8108T: f RF = 150 MHz to 930 MHz
• High-density surface mounting: 6 pin mini mold

ORDERING INFORMATION

PART NUMBER PACKAGE SUPPLYING FORM µPC8103T-E3 6pin mini mold Embossed tape 8 mm wide, Pin 1, 2, 3 face to perforation side of µPC8108T-E3 tape. QTY 3 kp/Reel Note To order evaluation samples, please contact your local NEC sales office. (Order number: µPC8103T, µPC8108T) PIN CONNECTION Caution Electro-static sensitive devices BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8103T, µPC8108T MIXER + OSCILLATOR IC FOR PAGER SYSTEM Document No. IC-3450 (O.D. No. IC-8980) Date Published July 1995 P Printed in Japan (Top View) (Bottom View) Markings PC8103T: C2C PC8108T: C2F µ µ 1 : RF INPUT 2 : GND 3 : OSC EMITTER 4 : OSC BASE 5 : V CC 6 : IF OUTPUT C2C © 1995 DATA SHEET

µPC8103T, µPC8108T INTERNAL BOLOCK DIAGRAM (IN COMMON) BIAS SYSTEM APPLICATION EXAMPLE AS PAGER PC8102T µ BPF PC8103T µ BPF IF

150 MHz to 330 MHz

µ BPF IF

450 MHz to 930 MHz

This system application example schematically presents the chip set product line-up only, and does not imply a detail application circuit (In the case of application circuit example for µPC8103T and µPC8108T, please refer to page 21). For details on the related devices, refer to the latest data sheet of each device. Note Resonator must be externally equipped with 3 and 4 pins. (Refer to pin explanations)

µPC8103T, µPC8108T PIN EXPLANATION ( µPC8103T, µPC8108T IN COMMON) PIN NO. PIN NAME RF input GND OSC Emitter OSC Base VCC IF Output SUPPLY VOLTAGE (V) 1.0 to 2.0 Same bias as VCC through external inductor (L) PIN VOLTAGE (V) 0.77 0.19 0.95 FUNCTION AND APPLICATION RF input for mixer. This port is low impedance. This ground pin must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. Track length should be kept as short as possible. Emitter, base pins of internal transistor for oscillator. These pins should be exter- nally equipped with resonator circuit of X’tal or LC. Supply voltage pin. Connect bypass capacitor (eg 1 000 pF) to minimize ground impedance. IF output pin from mixer. This pin is designed as open collector and should be equipped with inductor (L) because of high impedance port. EQUIVALENT CIRCUIT Note Each PIN VOLTAGE is measured with V CC = 1.0 V.

PC8103T, PC8108T Unless otherwise specified, both product in common. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT CONDITIONS Supply Voltage VCC 4.0 V TA = +25 °C, Pin 5 and 6 Power Dissipation PD 280 mW Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass PWB at T A = +85 °C Operating Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C IF Output Voltage Peak Level VIFout MAX. 5V TA = +25 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE Supply Voltage VCC 1.0 1.05 2.0 V Pin 5 and 6 Operating Temperature TA −25 +25 +75 °C Possible to oscillate RF Frequency fRF 150 330 MHz µPD8103T RF Frequency fRF 150 930 MHz µPD8108T ELECTRICAL CHARACTERISTICS (TA = +25 ˚C, VCC = 1.0 V, Z S = 50 Ω , ZL = 2 k Ω , fIF = 20 MHz, PLoin = −21 dBm externally, Upper local Note) PARAMETER SYMBOL µPC8103T µPC8108T UNIT CONDITIONS Conversion Gain 1 CG1 13 16 19 17.5 20.5 23.5 dB fRFin = 150 MHz, TEST CIRCUIT 1 Conversion Gain 2 CG2 12.5 15.5 18.5 17 20 23 dB fRFin = 280 MHz, TEST CIRCUIT 1 Conversion Gain 3 CG3 12.5 15.5 18.5 17 20 23 dB fRFin = 330 MHz, TEST CIRCUIT 1 Conversion Gain 4 CG4 – – – 16 19 22 dB fRFin = 450 MHz, TEST CIRCUIT 1 Conversion Gain 5 CG5 – – – 12 15 18 dB fRFin = 930 MHz, TEST CIRCUIT 1 Note Upper local means ‘f IF = f Loin – fRFin’. µ µ

µPC8103T, µPC8108T STANDARD CHARACTERISTICS FOR REFERENCE (T A = +25 ˚C, VCC = 1.0 V, Z S = ZL = 50 Ω , fIF = 20 MHz, P Loin externally, Upper local) PARAMETER SYMBOL µPC8103T µPC8108T UNIT CONDITIONSPLoin =P Loin =P Loin =P Loin = –21 dBm –10 dBm –21 dBm –10 dBm Noise Figure 1 NF1 13 9 13 8.5 dB f RFin = 150 MHz, TEST CIRCUIT 2 Noise Figure 2 NF2 11.5 8 12 7 dB f RFin = 280 MHz, TEST CIRCUIT 2 Noise Figure 3 NF3 12 9 13 8 dB f RFin = 330 MHz, TEST CIRCUIT 2 Noise Figure 4 NF4 – – 13.5 8 dB f RFin = 450 MHz, TEST CIRCUIT 2 Noise Figure 5 NF5 – – 18 11.5 dB f RFin = 930 MHz, TEST CIRCUIT 2 Note Upper local means ‘fIF = fLoin – fRFin’.

µPC8103T, µPC8108T TEST CIRCUIT 1 RS = 50 Ω , RL = 2 k Ω (CG MEASUREMENT) 1 000 pF NC 1 000 pF 1 000 pF 3 300 pF 1 000 pF VCC 2 kΩ * 1 000 pF 50 Ω C2C 150 H µ 50 Ω 50 Ω R L Signal Generator (Lo) Supplement: (50 Ω means impedance of measurement equipment) Signal Generator (RF) Spectrum Analyser * Note On 50 Ω measurement, this high inpedance IFout needs the calculatiuon as follows CG (dB) = Measured value +20 log 10 TEST CIRCUIT 2 RS = R L = 50 Ω (NF MEASUREMENT) 1 000 pF NC 1 000 pF 3 300 pF 1 000 pF VCC 1 000 pF C2C

20 MHz

µ Signal Generator (Lo) 50 Ω L 150 H 1 000 pF 50 Ω NF meter NOISE SOURCE 50 Ω 2 k Ω 50 Ω

µPC8103T, µPC8108T ILLUSTRATION OF TEST CIRCUITS ASSEMBLED ON EVALUATION BOARD EX-LO IF OUT BA DC RF IN A’B’ C’D’ IN OUT R L PC8103T 8108T SURFACE (IC mounted pattern) Backside (Ground pattern) µ Note (*1) 35 × 42 × 0.4 mm double sided copper clad polyimide board (*2) Solder plated pattern (*3) Surface vs. backside : A - A’, B - B’, C - C’, D - D’ (*4) should be removed. (*5) In the care of NF measurement, remove R and short. (*6) : Through holes

µPC8103T, µPC8108T CHARACTERISTIC CURVES (Unless otherwise specified with TEST CIRCUIT 1 or 2) — µPC8103T — CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Circuit Current ICC (mA) No signal CIRCUIT CURRENT vs. OPERATING TEMPERATURE Operating temperature TA (˚C) –40 100 Circuit Current ICC (mA) –20 VCC = 1.0 V VCC = 1.5 V VCC = 2.0 V RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local VCC = 0.9 V VCC = 1.0 V VCC = 1.5 V VCC = 2.0 V RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local VCC = 0.9 V VCC = 1.0 V VCC = 1.5 V VCC = 2.0 V No signal VCC = 0.9 V

µPC8103T, µPC8108T — µPC8103T — RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 1.0 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C TA =+85 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 1.0 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 0.9 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C TA = +25 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 0.9 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C TA = +25 ˚C

µPC8103T, µPC8108T — µPC8103T — RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 2.0 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C TA = +25 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 2.0 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = +85 ˚C TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 1.5 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C TA = +25 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) VCC = 1.5 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C TA = +25 ˚C

µPC8103T, µPC8108T — µPC8103T — Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 0.9 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 150 MHz Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 450 MHz fRFin = 280 MHz Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.5 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 280 MHz fRFin = 900 MHz fRFin = 150 MHz Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 2.0 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 280 MHz fRFin = 900 MHz fRFin = 450 MHz fRFin = 280 MHz fRFin = 900 MHz fRFin = 150 MHz fRFin = 450 MHz fRFin = 900 MHz fRFin = 150 MHz fRFin = 450 MHz

µPC8103T, µPC8108T — µPC8103T — Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V PRFin = –35 dBm fRFin = 150 MHz fLoin = 170 MHz –25 TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V PRFin = –35 dBm fRFin = 280 MHz fLoin = 300 MHz –25 TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C RF FREQUENCY vs. NOISE FIGURE RF input frequency fRFin (GHz) 0.1 0.3 0.5 Noise Figure NF (dB) PLoin = –21 dBm fIF = 20 MHz Upper local VCC = 1.0 V VCC = 1.5 V RF FREQUENCY vs. NOISE FIGURE 0.1 0.3 0.5 PLoin = –10 dBm fIF = 20 MHz Upper local VCC = 1.0 V VCC = 1.5 V RF input frequency fRFin (GHz) Noise Figure NF (dB) TA = –40 ˚C

µPC8103T, µPC8108T — µPC8103T — RF input level vs. IF output level and IM3 RF input level PRFin (dBm) –50 –30 –20 –10 IF output level of each tone PIF (dBm) 3rd order intermodelation distortion level IM3 (dBm) +10 –10 –20 –30 –40 –50 –60 –40 IM3 IFout VCC = 1.0 V fLoin = 170 MHz PLoin = –21 dBm fRFin (des) = 150.0 MHz fRFin (undes) = 150.5 MHz TEST CIRCUIT 1 RF input level vs. IF output level and IM3 –50 –30 –20 –10 +10 –10 –20 –30 –40 –50 –60 –40 IM3 IFout VCC = 1.0 V fLoin = 300 MHz PLoin = –21 dBm fRFin (des) = 280.0 MHz fRFin (undes) = 280.5 MHz TEST CIRCUIT 1 RF input level PRFin (dBm) IF output level of each tone PIF (dBm) 3rd order intermodelation distortion level IM3 (dBm)

µPC8103T, µPC8108T — µPC8108T — CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Circuit Current ICC (mA) No sigual CIRCUIT CURRENT vs. OPERATING TEMPERATURE Operating Temperature TA (˚C) –40 –20 100 Circuit Current ICC (mA) VCC = 1.0 V VCC = 1.5 V VCC = 2.0 V RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local VCC = 0.9 V VCC = 1.0 V VCC = 1.5 V VCC = 2.0 V RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 Conversion Gain CG (dB) PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local VCC = 0.9 V VCC = 1.0 V VCC = 1.5 V VCC = 2.0 V No sigual VCC = 0.9 V

µPC8103T, µPC8108T — µPC8108T — RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 1 Conversion Gain CG (dB)VCC = 1.0 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C TA = +85 ˚C RF FREQUENCY vs. CONVERSION GAIN 0.1 0.3 0.5 1 VCC = 1.0 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚CTA = –20 ˚C TA = +25 ˚C TA = +85 ˚C RF FREQUENCY vs. CONVERSION GAIN 0.1 0.3 0.5 1 VCC = 0.9 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C TA = +85 ˚C RF FREQUENCY vs. CONVERSION GAIN 0.1 0.3 0.5 1 VCC = 0.9 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C TA = +85 ˚C RF input frequency fRFin (GHz) Conversion Gain CG (dB) RF input frequency fRFin (GHz) Conversion Gain CG (dB) RF input frequency fRFin (GHz) Conversion Gain CG (dB)

µPC8103T, µPC8108T — µPC8108T — RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 1 Conversion Gain CG (dB)VCC = 1.5 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C TA = +85 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 1 Conversion Gain CG (dB)VCC = 1.5 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚CTA = +85 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 1 Conversion Gain CG (dB)VCC = 2.0 V PLoin = –10 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚CTA = +85 ˚C RF FREQUENCY vs. CONVERSION GAIN RF input frequency fRFin (GHz) 0.1 0.3 0.5 1 Conversion Gain CG (dB)VCC = 2.0 V PLoin = –21 dBm PRFin = –35 dBm fIF = 20 MHz Upper local TA = –40 ˚C TA = –20 ˚C TA = +25 ˚C TA = +85 ˚C

µPC8103T, µPC8108T — µPC8108T — Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 0.9 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 450 MHz fRFin = 150 MHz Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 450 MHz fRFin = 150 MHz fRFin = 280 MHz Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.5 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 450 MHz fRFin = 150 MHz fRFin = 280 MHz Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 2.0 V PRFin = –35 dBm fIF = 20 MHz Upper local –25 fRFin = 450 MHz fRFin = 150 MHz fRFin = 280 MHz fRFin = 900 MHz fRFin = 280 MHz fRFin = 900 MHz fRFin = 900 MHz fRFin = 900 MHz

µPC8103T, µPC8108T — µPC8108T — Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V fRFin = 280 MHz PRFin = –35 dBm fLoin = 170 MHz –25 TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V fRFin = 150 MHz PRFin = –35 dBm fLoin = 170 MHz –25 TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V fRFin = 450 MHz PRFin = –35 dBm fLoin = 470 MHz –25 TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C Local input level vs. CONVERSION GAIN Local input level PLoin (dBm) –30 –20 –15 –10 Conversion Gain CG (dB) VCC = 1.0 V fRFin = 900 MHz PRFin = –35 dBm fLoin = 920 MHz –25 TA = +25 ˚C TA = +85 ˚C TA = –20 ˚C TA = –40 ˚C

µPC8103T, µPC8108T — µPC8108T — RF FREQUENCY vs. NOISE FIGURE RF input frequency fRFin (GHz) 0.1 0.3 0.5 Noise Figure NF (dB) PLoin = –21 dBm fIF = 20 MHz Upper local VCC = 1.5 V VCC = 1.0 V RF FREQUENCY vs. NOISE FIGURE 0.1 0.3 0.5 PLoin = –10 dBm fIF = 20 MHz Upper local VCC = 1.5 V VCC = 1.5 V VCC = 1.0 V VCC = 1.0 V RF input level vs. IF output level and IM3 RF input level PRFin (dBm) –50 –30 –20 –10 IF output level of each tone PIF (dBm) 3rd order intermodulation distortion IM3 (dBm) +10 –10 –20 –30 –40 –50 –60 –40 IM3 VCC = 1.0 V fLoin = 170 MHz PLoin = –21 dBm fRFin (des) = 150.000 MHz fRFin (undes) = 150.025 MHz TEST CIRCUIT 1 IFout RF input level vs. IF output level and IM3 –50 –30 –20 –10 +10 –10 –20 –30 –40 –50 –60 –40 IM3 VCC = 1.0 V fLoin = 300 MHz PLoin = –21 dBm fRFin (des) = 280.000 MHz fRFin (undes) = 280.025 MHz TEST CIRCUIT 1 IFout RF input frequency fRFin (GHz) Noise Figure NF (dB) RF input level PRFin (dBm) IF output level of each tone PIF (dBm) 3rd order intermodulation distortion IM3 (dBm)

µPC8103T, µPC8108T — µPC8108T — RF input level vs. IF output level and IM3 –50 –30 –20 –10 +10 –10 –20 –30 –40 –50 –60 –40 IM3 VCC = 1.0 V fLoin = 950 MHz PLoin = –21 dBm fRFin (des) = 930.000 MHz fRFin (undes) = 930.025 MHz TEST CIRCUIT 1 IFout RF input level vs. IF output level and IM3 RF input level PRFin (dBm) –50 –30 –20 –10 IF output level of each tone PIF (dBm) 3rd order intermodulation distortion IM3 (dBm) +10 –10 –20 –30 –40 –50 –60 –40 IM3 VCC = 1.0 V fLoin = 470 MHz PLoin = –21 dBm fRFin (des) = 450.000 MHz fRFin (undes) = 450.025 MHz TEST CIRCUIT 1 IFout RF input level PRFin (dBm) IF output level of each tone PIF (dBm) 3rd order intermodulation distortion IM3 (dBm)

µPC8103T, µPC8108T Application circuit example (In the case of µPC8103T) 1 000 pF VCC (1.05 V) C2C RF IN (173.94 MHz, –40 dBm) Low impedance 4.3 kΩ 56 nH 11 pF C3 16 pF 8 pF 150 nH (68+82 nH) L2+L3 L4 C7 1 000 pF

150 H C6 1 000 pF

4.3 kΩ

152.2400 MHz

(Overtone Xtal) High impedance IF OUT

21.7 MHz

(KSS 21.7-7A) X'tal BPF µ ILLUSTRATION OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD (EX-LO) IF OUT BA DC RF IN A’B’ C’D’ IN OUT L2 L3 X'tal BPF PC8103T 8108T SURFACE BACKSIDE C3L1 µ Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated pattern (*3) Surface vs. Backside : A - A’, B - B’, C - C’, D - D’ (*4) : Through holes The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

µPC8103T, µPC8108T — With application circuit ( µPC8103T) — RF input level vs. IF output level RF input level PRFin (dBm) –50 –40 –30 –20 IF Output level PIF (dBm) –10 –20 –30 –40 –10 This measurement needs the calculation as same as TEST CIRCUIT 1. Spectrum of Overtone Oscillation (without RF signal)

100 MHz

0.0 dBm ATTEN 10 dB MKR 152.0 MHz –32.30 dBm MARKER

152.0 MHz

–32.30 dBm CENTER VBW 1 kHz SPAN 200 MHz SWP 1.00 sec 2 × ref. (desired OSC freq.) 1 000 pF Spectrum Analyzer (@ No RF signal) ref.

µPC8103T, µPC8108T

6 PIN MINI MOLD PACKAGE DIMENSIONS (Unit : mm)

0.95 0.95 1.9 2.9±0.2 1.1+0.2 –0.1 0.8 0 to 0.1 0.13±0.10.3+0.1 –0.05 2.8+0.2 –0.31.5+0.2 –0.1

µPC8103T, µPC8108T NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (eg 1 000 pF) to the Vcc pin. (5) Insert the inductor (eg L = 150 µH) between 5 and 6 pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC8103T, µPC8108T Note It is the storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 % RH. Caution The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (IEI-1207) Soldering conditions Package peak temperature: 235 ˚C, Hour: within 30 s. (more than 210 ˚C), Time: 2 time, Limited days: no. Note Package peak temperature: 215 ˚C, Hour: within 40 s. (more than 200 ˚C), Time: 2 time, Limited days: no. Note Soldering tub temperature: less than 260 ˚C, Hour: within 10 s. Time: 1 time, Limited days: no. Note Pin area temperature: less than 300 ˚C, Hour: within 10 s. Limited days: no. Note Recommended condition symbol IR35-00-2 VP15-00-2 WS60-00-1 Soldering process Infrared ray reflow VPS Wave soldering Pin part heating

µPC8103T, µPC8108T [MEMO]

µPC8103T, µPC8108T [MEMO] NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11