UPC8102

UPC8102T NEC | Alldatasheet

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Technical content

© 1996 DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8102T

DESCRIPTION

µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufactured using NEC’s 20 GHz fT NESAT TM III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials contribute excellent DC, AC performance. Thus, this process is utilized for 1 V voltage IC.

FEATURES

• 1 V supply voltage: VCC = 0.9 V to 2.0 V
• Low noise figure: 2.3 dBTYP. @ fin = 150 MHz (with external matching circuit to optimize NF)
• Low current consumption: ICC = 0.5 mATYP. @ V CC = 1.0 V
• Gain available frequency: fRF = 150 MHz to 330 MHz (with external matching circuit)
• High-density surface mounting: 6 pin mini mold

ORDERING INFORMATION

PART NUMBER PACKAGE MARKING SUPPLYING FORM µPC8102T-E3 6 pin mini mold C2B Embossed tape 8 mm wide. Pin 1, 2, 3 face to perforation side of tape. QTY 3 kp/Reel * For evaluation sample order, please contact your local NEC sales office. (Order number: µPC8102T). PIN CONNECTIONS (Top View) (Bottom View) 1: INPUT 2: GND 3: OUTPUT 4: V CC 5: C1 6: C2 C2B Caution Electro-static sensitive devices RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM Document No. P11501EJ2V0DS00 (Previous No. ID-3534) Date Published May 1996 P Printed in Japan

µPC8102T INTERNAL BLOCK DIAGRAM SYSTEM APPLICATION EXAMPLE AS PAGER

150 MHz to 330 MHz

µ µ

µPC8102T PIN EXPLANATION SUPPLY PIN VOLTAGEPIN NO. NAME VOLTAGE (V) FUNCTION AND APPLICATION EQUIVALENT CIRCUIT (V) 1 INPUT — 0.75 RF signal input pin. This pin should be externally equipped with matching circuit in accord- ance with desired frequency.

2 GND 0 — This ground pin must be

connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. Track length should be kept as short as possible. 3 OUTPUT — Amplified signal output pin. This pin should be externally equipped with matching circuit in accordance with desired frequency. 4V CC 0.9 to 2.0 — Supply voltage pin. Connect bypass capacitor (eg 1000 pF) to minimize ground impedance. 5 C1 — 0.88 Ground with capacitance pin (eg 1000 pF). 6 C2 — 0.85 AC ground pin for output Note Pin voltage values are described at VCC = 1 V. C2 pin voltage must be applied through external matching inductor 26 54

µPC8102T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL CONDITION RATINGS UNIT Supply Voltage V CC TA = +25 ˚C 2.2 V Power Dissipation P D Mounted on 50 × 50 × 1.6 mm double copper 280 mW clad epoxy glass PWB at TA = +85 ˚C Operating Temperature T opt –40 to +85 ˚C Storage Temperature T stg –55 to +150 ˚C RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage V CC 0.9 1.0 2.0 V Operating Temperature T opt –40 +25 +85 ˚C Operating Frequency f opt 150 330 MHz Electric characteristic (TA = +25 ˚C, VCC = 1.0 V, ZS = ZL = 50 ΩΩΩΩΩ ) PARAMETER SYMBOL TEST CONDITIONS µPC8102T UNIT MIN. TYP. MAX. Circuit Current I CC No input signal, TEST CIRCUIT 1 0.30 0.5 0.65 mA Power Gain G P f = 280 MHz, TEST CIRCUIT 3 10.0 13.5 16.5 dB Output 3rd order OIP 3 f1 = 150.000 MHz, f2 = 150.025 MHz — –5 — dBm intercept point TEST CIRCUIT 2 Note External matching circuits should be attached to input and output pins. Standared characteristics for reference (Sample: ICC = 0.55 mA, Condition: TA = +25 ˚C, VCC = 1.0 V) PARAMETER SYMBOL CONDITIONS Reference value UNIT matched with 50 Ω Power Gain 1 G P 1 f = 150 MHz, TEST CIRCUIT 2 20.6 dB Noise Figure 1 NF1 3.6 dB Power Gain 2 G P 2 f = 280 MHz, TEST CIRCUIT 3 14.7 dB Noise Figure 2 NF2 4.0 dB Power Gain 3 G P 3 f = 330 MHz, TEST CIRCUIT 5 14.5 dB Noise Figure 3 NF3 4.1 dB matched to optimize NF Power Gain 4 G P 4 f = 150 MHz, TEST CIRCUIT 2 19.4 dB Noise Figure 4 NF4 2.3 dB Power Gain 5 G P 5 f = 280 MHz, TEST CIRCUIT 4 14.0 dB Noise Figure 5 NF5 2.9 dB Power Gain 6 G P 6 f = 330 MHz, TEST CIRCUIT 6 11.6 dB Noise Figure 6 NF6 3.1 dB

µPC8102T TEST CIRCUIT 1 123 654 IN GND OUT C2 C1 V CC A

µPC8102T TEST CIRCUIT 2 (150 MHz) <Matched with 50 ΩΩΩΩΩ or matched to optimize NF> 7.5 pF (Note) 47 kΩ 1 000 pF 84 nH pF 1 000 pF 1 000 pF 1 000 pF 10 pF68 nH 7.5 pF (Note) IN 213 564 GND OUT VCCC1C2 Note Matching can be adjusted with trimmer condenser. ILLUSTRATION OF THE TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD C2B OUT IN 7.5 pF 7.5 pF 68 nH 1 000 pF 10 pF 1 000 pF1 000 pF 1 000 pF 84 nH 1 000 pF10 pF 47kΩ Mounting direction VCC Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Back side: GND pattern (*3) Solder plated on pattern (*4) : Through holes

µPC8102T TEST CIRCUIT 3 (280 MHz) <Matched with 50 ΩΩΩΩΩ > 2 pF 47 kΩ 1 000 pF 23 nH 10 pF 1 000 pF 1 000 pF 1 000 pF2 pF 23 nH 0.5 pF IN 213 564 GND OUT VCCC1C2 0.5 pF 5 pF ILLUSTRATION OF THE TEST CIRCUIT 3 ASSEMBLED ON EVALUATION BOARD C2B 1 000 pF Mounting direction 1 000 pF VCC OUT IN PC8102/07 TYPE2 µ OUT IN 2 pF 5 pF 23 nH 1 000 pF 0.5 pF 2 pF 23 nH 10 pF 47 kΩ 1 000 pF 0.5 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) : Through holes

µPC8102T TEST CIRCUIT 4 (280 MHz) <Matched to optimize NF> 2 pF 47 kΩ 1 000 pF 23 nH 10 pF 1 000 pF 1 000 pF 1 000 pF2 pF 27 nH IN 213 564 GND OUT VCCC1C2 10 pF ILLUSTRATION OF THE TEST CIRCUIT 4 ASSEMBLED ON EVALUATION BOARD C2B 1 000 pF Mounting direction 1 000 pF VCC OUT IN PC8102/07 TYPE2 µ OUT IN 2 pF 10 pF 27 nH 1 000 pF 0.5 pF 2 pF 23 nH 10 pF 47 kΩ 1 000 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) : Through holes

µPC8102T TEST CIRCUIT 5 (330 MHz) <Matched with 50 ΩΩΩΩΩ > 1.5 pF 47 kΩ 1 000 pF 23 nH 5 pF 1 000 pF 1 000 pF 1 000 pF 17 nH 6 pF IN 213 564 GND OUT VCCC1C2 3 pF ILLUSTRATION ON THE TEST CIRCUIT 5 ASSEMBLED ON EVALUATION BOARD C2B 1 000 pF Mounting direction 1 000 pF VCC OUT IN PC8102/07 TYPE2 µ OUT IN 1.5 pF 17 nH 1 000 pF 3 pF 23 nH 5 pF 47 kΩ 1 000 pF 6 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) : Through holes

µPC8102T TEST CIRCUIT 6 (330 MHz) <Matched to optimize NF> 2 pF 47 kΩ 1 000 pF 23 nH 6 pF 1 000 pF 1 000 pF 1 000 pF 23 nH 10 pF IN 213 564 GND OUT VCCC1C2 3 pF ILLUSTRATION ON THE TEST CIRCUIT 6 ASSEMBLED ON EVALUATION BOARD C2B 1 000 pF Mounting direction 1 000 pF VCC OUT IN PC8102/07 TYPE2 µ OUT IN 2 pF 23 nH 1 000 pF 3 pF 23 nH 6 pF 47 kΩ 1 000 pF 10 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) : Through holes

µPC8102T CHARACTERISTICS (T A = +25 ˚C unless otherwise specified) – TEST CIRCUIT 1 – TA = +85˚C TA = –40˚C CIRCUIT CURRENT vs. SUPPLY VOLTAGE VCC - SUPPLY VOLTAGE - V ICC - CURCUIT CURRENT - mA TA = +25˚C – TEST CIRCUIT 2 (matched with 50 ΩΩΩΩΩ ) – CH1 S 22 1 U FS 1: 47.934 Ω 0.7613 Ω 826.93 pH 150.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz CH1 O 21 log MAG 10 dB/ REF 0 dB 1: 20.543 dB CENTER 150.000 000 MHz SPAN 200.000 000 MHz CH1 S 12 log MAG 10 dB/ REF 0 dB 1: –41.406 dB CH1 S 11 1 U FS 1: 54.377 Ω –5.166 Ω 205.30 nH 150.000 000 MHz 150 MHz V CC = 1.0 V , ICC = 0.55 mA NF = 3.55 dB MARKER 1

150 MHz

150.000 000 MHz 150.000 000 MHz

µPC8102T – TEST CIRCUIT 2 (matched to optimize NF) – CH1 S 22 1 U FS 1: 53.445 Ω – 1.0137Ω 1.0467 nF 150.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz CH1 S21 log MAG 10 dB/ REF 0 dB 1: 19.418 dB CENTER 150.000 000 MHz SPAN 200.000 000 MHz CH1 S 12 log MAG 10 dB/ REF 0 dB 1: –43.251 dB CH1 S 11 1 U FS 1: 76.062 Ω 73.316 Ω 77.791 nH 150.000 000 MHz 150 MHz V CC = 1.0 V , ICC = 0.55 mA NF = 2.25 dB 150.000 000 MHz 150.000 000 MHz

µPC8102T – TEST CIRCUIT 3 (matched with 50 ΩΩΩΩΩ ) – De1 CH1 S 22 1 U FS 1: 51.172 Ω 4.5469 Ω 2.5845 nH 280.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 11 1 U FS 1: 84.699 Ω –2.8789 Ω 197.44 pF 280.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 21 log MAG 10 dB/ REF 0 dB 1: 14.748 dB CENTER 260.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 12 log MAG 10 dB/ REF 0 dB 1: –32.145 dB 280 MHz V CC = 1.0 V , ICC = 0.55 mA NF = 4.0 dB 260.000 000 MHz 280.000 000 MHz

µPC8102T – TEST CIRCUIT 4 (matched to optimize NF) – De1 CH1 S 22 1 U FS 1: 56.415 Ω –6.4043 Ω 67.633 pF 280.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 11 1 U FS 1: 81.02 Ω 75.09 Ω 42.682 nH 280.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 21 log MAG 10 dB/ REF 0 dB 1: 14.087 dB CENTER 280.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 12 log MAG 10 dB/ REF 0 dB 1: –33.561 dB 280 MHz VCC = 1.0 V , ICC = 0.55 mA NF = 2.93 dB 280.000 000 MHz TA = 25 ˚C 280.000 000 MHz

µPC8102T – TEST CIRCUIT 5 (matched with 50 ΩΩΩΩΩ ) – De1 CH1 S 22 1 U FS 1: 60.922 Ω – 91.797Ω 5.2539 nF 330.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 11 1 U FS 1: 57.111 Ω 11.426 Ω 5.5105 nH 330.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 21 log MAG 10 dB/ REF 0 dB 1: 14.479 dB CENTER 330.000 000 MHz SPAN 200.000 000 MHz CH1 S 12 log MAG 10 dB/ REF 0 dB 1: –30.38 dB 330 MHz VCC = 1.0 V , ICC = 0.55 mA NF = 4.1 dB 330.000 000 MHz 330.000 000 MHz

µPC8102T – TEST CIRCUIT 6 (matched to optimize NF) – De1 CH1 S 22 1 U FS 1: 47.793 Ω –6.7441 Ω 71.512 pF 330.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 11 1 U FS 1: 157.77 Ω –17.273 Ω 27.921 pF 330.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 21 log MAG 10 dB/ REF 0 dB 1: 11.58 dB CENTER 330.000 000 MHz SPAN 200.000 000 MHz De1 CH1 S 12 log MAG 10 dB/ REF 0 dB 1: –30.649 dB 330 MHz V CC = 1.00 V , ICC = 0.55 mA NF = 3.14 dB 330.000 000 MHz 330.000 000 MHz

µPC8102T – TEST CIRCUIT 2 – IM3 –10 +10 –80 –70 –60 –50 –40 –30 –20 IM 3 AND OUTPUT LEVEL vs. INPUT LEVEL (150 MHz) INPUT LEVEL Pin [dBm] Output level Pout [dBm] POUT 3rd order intermodulation distortion IM3 (dBm)

µPC8102T

6 PIN MINI MOLD PACKAGE DIMENSIONS (Unit: mm)

0.95 0.95 1.9 2.9 ±0.2 1.5 –0.1 +0.2 2.8 –0.3 +0.2 0.3 –0.05 +0.1 1.1 –0.1 +0.2 0.8 0 to 0.1 0.13 ±0.1 123 654

µPC8102T NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) The bypass capacitor (eg 1 000 pF) should be attached to the V CC pin. (5) The matching circuit must be each attached to input and output pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC8102T Soldering process Soldering conditions Recommended condition symbol Infrared ray reflow Package peak temperature: 235 ˚C, IR35-00-3 Hour: within 30 s. (more than 210 ˚C), Time: 3 time, Limited days: no.* Hour: within 40 s. (more than 200 ˚C), Time: 3 time, Limited days: no.* Wave Soldering Soldering tub temperature: less than 260 ˚C, Hour: within 10 s. WS60-00-1 Time: 1 time, Limited days: no.* Pin part heating Pin area temperature: less than 300 ˚C, Hour: within 3 s/pin. Limited days: no.* * It is the storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 % RH. Note The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICON- DUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535EJ7V0IF00) .

µPC8102T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11