UPC4572 RENESAS | Alldatasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC4572 LOW SUPPLY VOLTAGE, ULTRA LOW-NOISE, HIGH SPEED, WIDE BAND, LOW IB DUAL OPERATIONAL AMPLIFIER DATA SHEET Document No. G15972EJ6V0DS00 (6th edition) Date Published December 2007 NS Printed in Japan 1986 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The μ PC4572 is a dual wide band, ultra low noise operational amplifier designed for low supply voltage operation of +4 V to +14 V single supply and ±2 V to ±7 V split supplies. Using high hFE PNP transistors for the input circuit, Input bias current and input equivalent noise are better than conventional wide band operational amplifier. The μ PC4572 is an excellent choice for preamplifiers and acti ve filters in audio, instrumentation, and communication circuit.

FEATURES

  • Ultra low noise: e n = 4.0 nV/ Hz
  • Low input bias current: 100 nA
  • High slew rate: 6 V/ μs
  • Low supply voltage: ±2 V to ±7 V (Split) +4 V to +14 V (Single)
  • Internal frequency compensation

ORDERING INFORMATION

μ PC4572C μ PC4572C(5) 8-pin plastic DIP (7.62 mm (300) ) 8-pin plastic DIP (7.62 mm (300) ) μ PC4572G2 μ PC4572G2(5) 8-pin plastic SOP (5.72 mm (225) ) 8-pin plastic SOP (5.72 mm (225) ) EQUIVALENT CIRCUIT (1/2 Circuit) II IN R3 R4 Q15 Q11 Q12 Q10 Q14 Q16 Q17 R10 R11 OUT Q13 PIN CONFIGURATION (Top View) OUT1 I1I N1I V V OUT2 I I μPC4572C, 4572C(5), 4572G2, 4572G2(5) <R> <R>

Data Sheet G15972EJ6V0DS 2 μ PC4572 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Ratings Unit Voltage between V+ and V− Note1 V+ − V− −0.3 to +15 V Differential Input Voltage V ID ±10 V Input Voltage Note2 VI V− − 0.3 to V+ + 0.3 V Output Voltage Note3 VO V− − 0.3 to V+ + 0.3 V Power Dissipation C Package Note4 350 mW PT 440 mW Output Short Circuit Duration Note6 ts 10 sec Operating Ambient Temperature T A −20 to +80 °C Storage Temperature T stg −55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input wit hout damage or destruction. Ev en during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage, which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is −5.0 mW/°C when ambient temperature is higher than 55°C. 5. Thermal derating factor is −4.4 mW/°C when ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (Split) V ± ±2 ±5 ±7 V Supply Voltage (V− = GND) V+ +4 +5/ +12 +14 V Output Current I O ±10 mA Capacitive Load (AV = +1) C L 100 pF <R>

Data Sheet G15972EJ6V0DS 3 μ PC4572 μ PC4572C, μ PC4572G2 ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage V IO R S ≤ 50 Ω ±0.3 ±5 mV Input Offset Current Note7 IIO ±10 ±100 nA Input Bias Current Note7 IB 100 400 nA Large Signal Voltage Gain A V R L ≥ 2 kΩ , VO = ±2 V 10000 100000 Supply Current Note8 ICC I O = 0 A 4.5 7 mA Common Mode Rejection Ratio CMR 70 90 dB Supply Voltage Rejection Ratio SVR 70 85 dB RL ≥ 10 kΩ ±3.3 ±3.7 Output Voltage Swing V om RL ≥ 2 kΩ ±3.0 ± 3.5 V Common Mode Input Voltage Range V ICM ±3.5 ±4 V Output Short Circuit Current I O short RL = 0 ±15 ±20 mA Slew Rate SR A V = +1, RL ≥ 2 kΩ 3.5 6 V/ μs Gain Band Width Product GBW f O = 100 kHz 10 16 MHz Unity Gain Frequency f unity open loop 9 MHz Phase Margin φunity open loop 60 degree Total Harmonic Distortion THD V O = 1 V r.m.s., f = 20 Hz to 20 kHz (Fig.1) 0.002 % RIAA (Fig.2) 0.8 Input Equivalent Noise Voltage V n FLAT+JIS A, RS = 100 Ω (Fig.3) 0.5 0.65 μVr.m.s. fO = 10 Hz 4.5 Input Equivalent Noise Voltage Density e n fO = 1 kHz 4.0 nV/ Hz Input Equivalent Noise Current Density i n f O = 1 kHz 0.7 pA/ Hz Channel Separation f = 20 Hz to 20 kHz 120 dB Average VIO Temperature Drift ΔVIO/ ΔT ±2 μV/°C ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V, V− = GND) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage V IO R S ≤ 50 Ω ±0.3 ±5 mV Input Offset Current Note7 IIO ±10 ±100 nA Input Bias Current Note7 IB 100 400 nA Large Signal Voltage Gain A V R L ≥ 2 kΩ 8000 80000 Supply Current Note8 ICC I O = 0 A 4 6 mA Common Mode Rejection Ratio CMR 60 75 dB Supply Voltage Rejection Ratio SVR 60 70 dB Output Voltage (High) V OH R L ≥ 2 kΩ (RL to 1/2 V+) 3.2 3.5 V Output Voltage (Low) V OL R L ≥ 2 kΩ (RL to 1/2 V+) 1.3 1.6 V Common Mode Input Voltage Range V ICM 1.5 3.5 V Slew Rate SR A V = +1 4 V/ μs Gain Band Width Product GBW 12 MHz Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 8. This current flows irrespective of the existence of use. <R>

Data Sheet G15972EJ6V0DS 4 μ PC4572 μ PC4572C(5), μ PC4572G2(5) ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage V IO R S ≤ 50 Ω ±0.3 ±1.5 mV Input Offset Current Note7 IIO ±10 ±50 nA Input Bias Current Note7 IB 100 200 nA Large Signal Voltage Gain A V R L ≥ 2 kΩ, VO = ±2 V 30000 100000 Supply Current Note8 ICC I O = 0 A 4.5 5.5 mA Common Mode Rejection Ratio CMR 75 90 dB Supply Voltage Rejection Ratio SVR 70 85 dB RL ≥ 10 kΩ ±3.45 ±3.7 Output Voltage Swing V om V Common Mode Input Voltage Range V ICM +3.8 −3.7 ±4 V Output Short Circuit Current I O short RL = 0 ±15 ±20 mA Slew Rate SR A V = +1, RL ≥ 2 kΩ 3.5 6 V/ μs Gain Band Width Product GBW f O = 100 kHz 10 16 MHz Unity Gain Frequency f unity open loop 9 MHz Phase Margin φunity open loop 60 degree Total Harmonic Distortion THD V O = 1 V r.m.s., f = 20 Hz to 20 kHz (Figure1) 0.002 % RIAA (Figure2) 0.8 Input Equivalent Noise Voltage V n FLAT+JIS A, RS = 100 Ω (Figure3) 0.5 0.65 μVr.m.s. fO = 10 Hz 4.5 Input Equivalent Noise Voltage Density e n fO = 1 kHz 4.0 nV/ Hz Input Equivalent Noise Current Density i n f O = 1 kHz 0.7 pA/ Hz Channel Separation f = 20 Hz to 20 kHz 120 dB Average VIO Temperature Drift ΔVIO/ ΔT ±2 μV/°C ELECTRICAL CHARACTERISTICS (TA = 25°C, V+ = +5 V, V− = GND) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage V IO R S ≤ 50 Ω ±0.3 ±1.5 mV Input Offset Current Note7 IIO ±10 ±50 nA Input Bias Current Note7 IB 100 200 nA Large Signal Voltage Gain A V R L ≥ 2 kΩ , 40000 80000 Supply Current Note8 ICC I O = 0 A 4 5 mA Common Mode Rejection Ratio CMR 65 75 dB Supply Voltage Rejection Ratio SVR 60 70 dB Output Voltage (High) V OH R L ≥ 2 kΩ (RL to 1/2 V+) 3.4 3.5 V Output Voltage (Low) V OL R L ≥ 2 kΩ (RL to 1/2 V+) 1.3 1.45 V Common Mode Input Voltage Range V ICM 1.2 3.8 V Slew Rate SR A V = +1 4 V/ μs Gain Band Width Product GBW 12 MHz Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 8. This current flows irrespective of the existence of use. <R>

Data Sheet G15972EJ6V0DS 5 μ PC4572 MEASUREMENT CIRCUITS VO = 1 Vr.m.s. + 2 kΩ Fig. 1 Total Harmonic Distortion Measurement Circuit 330 kΩ30 kΩ 2.2 kΩ 56 kΩ 610 Ω VO = (36.5 dB + 40 dB) × Vn 100 kΩ 8200 pF 2400 pF VO 76.5 dBVn = LPF (fO = 30 kHz)33 F 47 F 1.5 F 40 dB Amp. μ μ μ Fig. 2 Noise Measurement Circuit (RIAA) 10 kΩ 100 Ω VO = 40 dB × Vn JIS A RS = 100 Ω VO 40 dBVn = Fig. 3 Flat Noize Measurement Circuit (FLAT + JIS A)

Data Sheet G15972EJ6V0DS 6 μ PC4572 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) 600 500 400 300 200 100 0 2 04 06 08 0 1 0 0 POWER DISSIPATION PT - Total Power Dissipation - mW TA - Operating Ambient Temperature - °C PC4572G2 PC4572C μ μ 200°C/W 227°C/W 100 120 0 1 10 1 k 100 k 1 M 10 M 100 10 k OPEN LOOP FREQUENCY RESPONSE AV - Open Loop Voltage Gain - dB f - Frequency - Hz V± = ±5 V 1.5 0.5 0.5 −1.5 −2 00 2 04 06 08 0 = ±5 VV± VIO - Input Offset Voltage - mV INPUT OFFSET VOLTAGE TA - Operating Ambient Temperature - °C each 5 samples data 200 180 160 140 120 100 −20 0 20 40 60 80 = ±5 VV± IB - Input Bias Current - nA INPUT BIAS CURRENT TA - Operating Ambient Temperature - °C 100 1 k 10 k 100 k 1 M LARGE SIGNAL FREQUENCY RESPONSE Vom - Output Voltage Swing - Vp-p f - Frequency - Hz 10 M RL = 10 kΩ 00 10 20 30 40 OUTPUT CURRENT LIMIT VO+, IO SOURCE VO−, IO SINK V O ± - Output Voltage - V IO - Output Current - mA 0 20 SUPPLY CURRENT ICC - Supply Current - mA TA - Operating Ambient Temperature - °C −20 04 0 6 0 8 0 V± = ±5 V SUPPLY CURRENT ICC - Supply Current - mA V± - Supply Voltage - V ±5 ±10 <R>

Data Sheet G15972EJ6V0DS 7 μ PC4572 COMMON MODE INPUT VOLTAGE RANGE VICM - Common Mode Input Voltage Range - V V± - Supply Voltage - V −10 ±5 ±10 VO - Output Voltage - V −2.5 2.5 VOLTAGE FOLLOWER PULSE RESPONSE 86420 t - Time - sμ V± = ±5 V AV = +1 RL = 2 kΩ 100 Vn - Input Equivalent Noise Voltage - Vr.m.s. μ INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A) RS - Source Resistance - Ω 100 k100 1 k 10 k 0.1 V± = ±5 V en -Input Equivalent Noise Voltage Density - nV/ Hz INPUT EQUIVALENT NOISE VOLTAGE DENSITY f - Frequency - Hz 10 100 k 100 1 k 10 k RS = 100 Ω V± = ±5 V THD - Total Harmonic Distortion - % TOTAL HARMONIC DISTORTION f - Frequency - Hz 0.1 0.01 0.001 0.0001 10 100 k 100 1 k 10 k V± = ±5 V VO = 3 Vr.m.s. AV = +1 RL = 2 kΩ

Data Sheet G15972EJ6V0DS 8 μ PC4572 PACKAGE DRAWINGS (Unit: mm) ITEM MILLIMETERSNOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. P8C-100-300B,C-2 N 0.25 P 0.9 MIN. R0 ∼15° A 10.16 MAX. B 1.27 MAX. F 1.4 MIN. G 3.2 ±0.3 J 5.08 MAX. K 7.62 (T.P.) C 2.54 (T.P.) D 0.50 ±0.10 H 0.51 MIN. I 4.31 MAX. L 6.4 M 0.25 +0.10 −0.05 2. ltem "K" to center of leads when formed parallel. M A RM PI J H G F DN C B 8-PIN PLASTIC DIP (7.62mm(300)) L K <R>

Data Sheet G15972EJ6V0DS 9 μ PC4572 ITEM B C I 8-PIN PLASTIC SOP (5.72 mm (225)) D E F G H J P MILLIMETERS 1.27 (T.P.) 0.78 MAX. 4.4 ±0.15 0.1 ±0.1 0.42 1.59 ±0.21 6.5 ±0.3 1.49 +0.08 −0.07 1.1 ±0.2 3°+7° −3° NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. A 5.2 +0.17 −0.20 K L M N 0.6 ±0.2 0.17 0.12 0.10 +0.08 −0.07 S8GM-50-225B-6 1 4 S M C detail of lead end A M SN F G B E D P H I J K L

Data Sheet G15972EJ6V0DS 10 μ PC4572 RECOMMENDED SOLDERING CONDITIONS The μ PC4572 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Type of Surface Mount Device μ PC4572G2, 4572G2(5): 8-pin plastic SOP (5.72 mm (225) ) Process Conditions Symbol Infrared Ray Reflow Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. IR30-00-1 Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. VP15-00-1 Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). WS60-00-1 Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device μ PC4572C, 4572C(5): 8-pin plastic DIP (7.62 mm (300) ) Process Conditions Wave Soldering (only to leads) Solder temperature: 260°C or below, Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNT MANUAL http:// www.necel.com/pkg/en/mount/index.html NEC SEMICONDUCTOR DEVICE RELIABILITY/ QUALITY CONTROL SYSTEM- STANDARD LINEAR IC IEI-1212 <R> <R>

μ PC4572 The information in this document is current as of December, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate suffic ient safety me asures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":