UPC4250 RENESAS | Alldatasheet
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© 1992 BIPOLAR ANALOG INTEGRATED CIRCUIT µµ µµPC4250 PROGRAMMABLE OPERATIONAL AMPLIFIER DATA SHEET Document No. G15640EJ3V0DS00 (3rd edition) (Previous No. IC-1976) Date Published June 2001 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark # shows major revised points.
DESCRIPTION
The µPC4250 is a highly versatile monolithic operational amplifier. The quiescent power dissipation, input offset and bias current, slew rate and gain-bandwidth products are determined by a single external programming resistor. Since the µPC4250 is in effect different op amps for each externally programmed set current, it is possible to use a single stock item for a variety of circuit function in a system.
FEATURES
- Wide supply voltage range: ±1 V to ±18 V
- Programmable electrical characteristics Power consumption, slew rate, etc.
- Internal frequency compensation
- Offset voltage null capability
- Output short circuit protection
ORDERING INFORMATION
µPC4250C 8-pin plastic DIP (7.62 mm (300)) µPC4250G2 8-pin plastic SOP (5.72 mm (225)) EQUIVALENT CIRCUIT PIN CONFIGURATION (Top View) 8OFFSET NULL II IN V − OFFSET NULL OUT V ISET PC4250C,4250G2µ 140 Ω 5 kΩ 6 kΩ 5 kΩ 2.5 kΩ 10 kΩ 10 kΩ 100 Ω 100 Ω 100 Ω 140 Ω 70 Ω 10 kΩ5 kΩ 5 kΩ Q Q R V SET 1 2 Q 2I N Q R 11 6 13Q R16 Q OUTPUT Q Q QQ R R OFFSET NULL OFFSET NULL R 8 9 R Q R R R 1 Q Q Q R R Q R I I Q Q R Q R
µµ µµPC4250 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Ratings Unit Voltage between V+ and V– Note 1 Differential Input Voltage VID ±30 V Input VoltageNote 2 VI V––0.3 to V+ +0.3 V Output VoltageNote 3 VO V––0.3 to V+ +0.3 V ISET Current ISET 150 µA C Package Note 4 350 mWPower Dissipation PT 440 mW Output Short Circuit DurationNote 6 Indefinite sec Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55°C. 5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V± ±1 ±16 V ISET Current ISET 0.1 50 µA
Data Sheet G15640EJ3V0DS 3 µµ µµPC4250 TYPICAL CONNECTIONS V RSET ISET V V RSET ISET I SET RSET ISET V RSET V V − − V 0.5 ISET V V RSET 4 8 100 k OFFSET VOLTAGE NULL CIRCUIT Remark ISET is indispensable to operate.
µµ µµPC4250 ELECTRICAL CHARACTERISTICS (TA = 25°C, V±± ±± = ±± ±±15 V) ISET = 1 µAI SET = 10 µAParameter Symbol Conditions MIN. MAX. MIN. MAX. Unit RS ≤ 100 kΩ± 5 ±6Input Offset Voltage VIO mV Input Offset Current Note 7 IIO ±6 ±20 nA 10 75Input Bias Current Note 7 IB V± = ±1.5 V 10 75 nA VO = ±10 V, RL = 100 kΩ 60000Large Signal Voltage Gain Av VO = ±10 V, RL = 10 kΩ 60000 IO = 0 A 11 100Supply Current ICC V± = ±1.5 V, IO = 0 A 8 90 µA IO = 0 A 330 3000Power Dissipation Pd V± = ±1.5 V, IO = 0 A 24 270 µW Common Mode Rejection Ratio CMR R S ≤ 10 kΩ 70 70 dB Supply Voltage Rejection Ratio SVR R S ≤ 10 kΩ 74 74 dB RL = 100 kΩ± 12Output Voltage Swing Vom V RL = 10 kΩ± 12Output Voltage Swing Vom V ±13.5 ±13.5Common Mode Input Voltage Range V ICM V Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. TYPICAL APPLICATION 3.3 M VO 330 k RSET 12 M VIN 300 k x10 Amplifier (500 nW) 1.0 V− 1.0 V+
Data Sheet G15640EJ3V0DS 5 µµ µµPC4250 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) INPUT OFFSET CURRENT 02 04 06 08 0 IIO - Input Offset Current - nA TA - Operating Ambient Temperature - C°
1 A ≤ 10 Aµµ ≤ ISET
1.5 V V 15 V≤ ±≤
−20 −10 −15 600 500 400 300 200 100 0 20 40 60 80 100 PT - Total Power Dissipation - mW TA - Operating Ambient Temperature - C° PC4250Cµ PC4250G2 µ C/W°200 C/W°227 POWER DISSIPATION INPUT OFFSET VOLTAGE (unnull) 10 100 ISET - A VIO -Input Offset Voltage - mV 1.00.1 µ 0.8 VIO - Input Offset Voltage - mV 0.4 02 04 06 08 0 ±V = 1.5 V 0.8 − 0.4 20− ±V = 15 V ISET = 10 Aµ INPUT OFFSET VOLTAGE (unnull) TA - Operating Ambient Temperature - C° INPUT BIAS CURRENT V = 1.5 V V = 15 V 1000 100 0.1 0.1 1 10 100 IB - Input Bias Current - nA ISET - µ A INPUT BIAS CURRENT IB - Input Bias Current - nA 6040200−20 −10 TA - Operating Ambient Temperature - C° ±V = 15 V ±V = 1.5 V ±V = 15 V ±V = 1.5 V ISET = 10 Aµ ISET = 1 Aµ
µµ µµPC4250 100 02 04 06 0 8 0 ICC - Supply Current - A µ ±V = 1.5 V −20 TA - Operating Ambient Temperature - C° ISET = 1 Aµ ISET = 10 Aµ ±V = 15 V ±V = 15 V ±V = 1.5 V SUPPLY CURRENT 107 106 105 104 0.1 1.0 10 100 ISET - Aµ RL = 100 kΩ Av - Open Loop Voltage Gain OPEN LOOP VOLTAGE GAIN 1 M 100 k 10 k 1 k 0.1 1.0 10 100 GBW - Gain Bandwidth Product - Hz ISET - Aµ RL = 100 kΩ GAIN BANDWIDTH PRODUCT ±V = 1.5 V± ±V = 15 V± Vom - Output Voltage Swing - Vp-p 1 k 10 k 100 k 1 M Vom - Output Voltage Swing - Vp-p 2.4 1.8 1.2 0.6 ±V = 15 V RL - Load Resistance - Ω ISET = 10 Aµ ISET = 1 Aµ ISET = 1 Aµ ISET = 10 Aµ ±V = 1.5 V ±(V = 1.5 V) ±(V = 15 V) OUTPUT VOLTAGE SWING Vom - Output Voltage Swing - Vp-p V - Supply Voltage - V RL = 10 kΩ 0.1 0.1 1 10 100 ICC - Supply Current - A µ ISET - Aµ ±V = 15 V ±V = 1.5 V SUPPLY CURRENT
Data Sheet G15640EJ3V0DS 7 µµ µµPC4250 RSET - (to V -) 0.01 0.1 1 10 100 10 k 100 k 1 M 10 M 100 M ICC - Supply Current - Aµ ±V = 1.5 V± ±V = 15 V± RSET Ω 1.0 0.1 0.01 0.001 0.01 0.1 1.0 10 100 ISET - Aµ RL = 10 kΩ ±V = 1.5 V± ±V = 15 V± SLEW RATE SR - Slew Rate - V/ s µ 0.1 1.0 10 100 Phase Margin Degrees ISET - Aµ RL = 100 kΩ PHASE MARGIN ±V = 15 V± ±V = 1.5 V±
µµ µµPC4250 PACKAGE DRAWINGS (Unit : mm) ITEM MILLIMETERSNOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. P8C-100-300B,C-2 N 0.25 P 0.9 MIN. R0 ∼15° A 10.16 MAX. B 1.27 MAX. F 1.4 MIN. G 3.2± 0.3 J 5.08 MAX. K 7.62 (T.P.) C 2.54 (T.P.) D 0.50± 0.10 H 0.51 MIN. I 4.31 MAX. L 6.4 M 0.25 +0.10 −0.05 2. ltem "K" to center of leads when formed parallel. M A RM PI J H G F DN C B 8-PIN PLASTIC DIP (7.62mm(300)) L K
Data Sheet G15640EJ3V0DS 9 µµ µµPC4250 ITEM B C I 8-PIN PLASTIC SOP (5.72 mm (225)) D E F G H J P MILLIMETERS 1.27 (T.P.) 0.78 MAX. 4.4±0.15 0.1±0.1 0.42 1.59±0.21 6.5±0.3 1.49 +0.08 −0.07 1.1±0.2 3°+7° −3° NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. A 5.2 +0.17 −0.20 K L M N 0.6±0.2 0.17 0.12 0.10 +0.08 −0.07 S8GM-50-225B-6 1 4 S M C detail of lead end A M S N F G B E D P H I J K L
Data Sheet G15640EJ3V0DS10 µµ µµPC4250 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E). Type of Surface Mount Device µµ µµPC4250G2: 8-pin plastic SOP (5.72 mm (225)) Process Conditions Symbol Infrared Ray Reflow Peak temperature: 235°C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 3 time. IR35-00-3 Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 3 time. VP15-00-3 Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). WS60-00-1 Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µµ µµPC4250C: 8-pin plastic DIP (7.62 mm (300)) Process Conditions Wave Soldering (only to leads) Solder temperature: 260°C or below, Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.
Data Sheet G15640EJ3V0DS 11 µµ µµPC4250 [MEMO]
µµ µµPC4250 M8E 00. 4 The information in this document is current as of June, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).