UPC4092 NEC | Alldatasheet

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The information in this document is subject to change without notice. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC4092 J-FET INPUT LOW-OFFSET DUAL OPERATIONAL AMPLIFIER Document No. G13905EJ1V0DS00 (1st edition) Date Published December 1998 N CP(K) Printed in Japan DATA SHEET © 1998 The µPC4092 dual operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor (fT = 300 MHz) in the output stage solves the oscillation problem of current sinking with a large capacitive load. Zener-zap resistor trimming in the input stage produces excellent offset voltage and temperature drift characteristics.

FEATURES

  • Stable operation with 10000 pF capacitive load
  • Low input offset voltage ±3 mV (MAX.) µV/°C (TYP.) temperature drift
  • Very low input bias and offset currents
  • Low noise : en = 19 nV/ √Hz (TYP.)
  • Output short circuit protection
  • High input impedance ... J-FET Input Stage
  • Internal frequency compensation
  • High slew rate: 15 V/ µs (TYP.)

ORDERING INFORMATION

µPC4092C 8-pin plastic DIP (300 mil) µPC4092G2 8-pin plastic SOP (225 mil) EQUIVALENT CIRCUIT (1/2 Circuit) PIN CONFIGURATION (Top View) II IN Q 1 Q 2 Q 4 Q 5 Q 8 D 1 C 1 Q 10 V V OUT Q 9 Q 7 Q 6 Q 3 TRIMMED HIGH SPEED PNP PC4092C, 4092G2 V OUT 2 II2 IN2 II1 IN1 OUT 1 V − µ

µµµµPC4092 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Parameter Symbol Ratings Unit Voltage between V and V –Note 1 V – V –0.3 to +36 V Differential Input Voltage V ID ±30 V Input Voltage Note 2 VI V –0.3 to V +0.3 V Output Voltage Note 3 VO V –0.3 to V +0.3 V C Package Note 4 350 mWPower Dissipation Note 5 PT 440 mW Output Short Circuit Duration Note 6 Indefinite sec Operating Ambient Temperature T A –20 to +80 °C Storage Temperature T stg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V ± ±5 ±16 V Output Current I O ±10 mA Capacitive Load (AV = +1, Rf = 0 Ω )C L 10000 pF

µµµµPC4092 ELECTRICAL CHARACTERISTICS (T A = 25 °C, V±±±± = ±±±±15 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage V IO R S ≤ 50 Ω± 1 ±3m V Input Offset Current Note 7 IIO ±25 ±100 pA Input Bias Current Note 7 IB 50 200 pA Large Signal Voltage Gain A V R L ≥ 2 kΩ , VO = ±10 V 25000 200000 Supply Current I CC IO = 0 A, Both Amplifiers 5 6.8 mA Common Mode Rejection Ratio CMR 70 100 dB Supply Voltage Rejection Ratio SVR 70 100 dB R L ≥ 10 kΩ± 12 +14.0 –13.3 VOutput Voltage Swing V om R L ≥ 2 kΩ± 10 +13.5 –12.8 V Common Model Input Voltage Range V ICM ±11 +14 –12 V Slew Rate SR A V = 1 15 V/ µs Unity Gain Frequency f unity 4M H z Input Equivalent Noise Voltage Density en R S = 100 Ω , f = 1 kHz 19 nV/ √Hz Channel Separation 120 dB Input Offset Voltage V IO R S ≤ 50 Ω , TA = –20 to +70 °C ±5m V Average VIO Temperature Drift ΔVIO/ΔTT A = –20 to +70 °C ±7 µV/°C Input Offset Current Note 7 IIO TA = –20 to +70 °C ±2n A Input Bias Current Note 7 IB TA = –20 to +70 °C 7 nA Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the junction temperature close to the operating ambient temperature.

µµµµPC4092 TYPICAL PERFORMANCE CHARACTERISTICS (T A = 25 °C, TYP.) 600 500 400 300 200 100 0.01 0.1 1.0 100 100 120 100 1 k 10 k ±10 ±20100 k 1 M 10 M −40 −20 0 20 TA - Operating Ambient Temperature - °C INPUT OFFSET VOLTAGE INPUT BIAS CURRENT TA - Operating Ambient Temperature - °C40 60 80 −2 00 2 04 06 08 0 100 10 k 1 M1 k10 100 k 10 M40 60 80 100 R L = 10 kΩ R L = 10 kΩ PC4092G2 PC4092C TA - Operating Ambient Temperature - °C f - Frequency - Hz V ± - Supply Voltage - V LARGE SIGNAL FREQUENCY RESPONSE OUTPUT VOLTAGE SWING f - Frequency - Hz POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE PT - Total Power Dissipation - mWVom - Output Voltage Swing - Vp-p VIO - Input Offset Voltage - mV AV - Open Loop Voltage Gain - dBVom - Output Voltage Swing - Vp-p IB - Input Bias Current - nA V± = ±15 V R L = 2 kΩ V± = ±15 V V± = ±10 V V± = ±5 V µ µ 200 °C/W 227 °C/W

µµµµPC4092 VO - Output Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE 2 (RL = 2 kΩ , CL = 10000 pF) t - Time - sµ −10 20 40 60 VO - Output Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE 1 (RL = 2 kΩ , CL = 100 pF) t - Time - sµ −10 246 Voltage Density - nV/ Hz en - Input Equivalent Noise INPUT EQUIVALENT NOISE VOLTAGE DENSITY f - Frequency - Hz 100 1k 10k 100k ICC - Supply Current - mA SUPPLY CURRENT V± - Supply Voltage - V ±10 ±15 ±20 VO − - Output Voltage - V OUTPUT SINK CURRENT LIMITOUTPUT SOURCE CURRENT LIMIT IO SINK - Output Sink Current - mAIO SOURCE - Output Source Current - mA −10 −15 0 10 20 30 VO + - Output Voltage - V 01 0 2 0 3 0 +10 +15 V± = ±15 V R S = 100 Ω TA = 70 °C 25 °C −20 °C 25 °C −20 °C TA = 70 °C

µµµµPC4092 PACKAGE DRAWINGS 8PIN PLASTIC DIP (300 mil) ITEM MILLIMETERS INCHESNOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. P8C-100-300B,C-1 N 0.25 0.01 P 0.9 MIN. 0.035 MIN. R 0~15 ° 0~15 ° A 10.16 MAX. 0.400 MAX. B 1.27 MAX. 0.050 MAX. F 1.4 MIN. 0.055 MIN. J 5.08 MAX. 0.200 MAX. D 0.50 –0.10 0.020 +0.004 –0.005 H 0.51 MIN. 0.020 MIN. I 4.31 MAX. 0.170 MAX. L 6.4 0.252 M 0.25 0.010 +0.004 –0.003 +0.10 –0.05 2) ltem "K" to center of leads when formed parallel. M A RM PI J H G F DN C B L K

µµµµPC4092

8 PIN PLASTIC SOP (225 mil)

M C D F 1 4 M G E B P J K L NS detail of lead end ITEM MILLIMETERS A B C E F G H I J 5.2 1.27 (T.P.) 1.59±0.21 1.49 6.5±0.3 0.78 MAX. 0.12 1.1±0.2 4.4±0.15 M 0.1±0.1 N S8GM-50-225B-5 P3 °+7° D 0.42 +0.08 −0.07 K 0.17 +0.08 −0.07 L 0.6 ±0.2 0.10 −3° S H I A NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. +0.17 −0.20

µµµµPC4092 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E) . Type of Surface Mount Device µµµµPC4092G2: 8-pin plastic SOP (225 mil) Process Conditions Symbol Infrared Ray Reflow Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. IR30-00-1 Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. VP15-00-1 Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). WS60-00-1 Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µµµµPC4092C: 8-pin plastic DIP (300 mil) Process Conditions Wave Soldering (only to leads) Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.

µµµµPC4092 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E NEC IC PACKAGE MANUAL (CD-ROM) C13388E GUIDE TO QUALITY ASSURANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM IEI-1212 (STANDARD LINEAR IC)

µµµµPC4092 [MEMO]

µµµµPC4092 [MEMO]

µµµµPC4092 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5