UPC4061 RENESAS | Alldatasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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© 1987 BIPOLAR ANALOG INTEGRATED CIRCUIT µµ µµPC4061 J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER DATA SHEET Document No. G15038EJ3V0DS00 (3rd edition) (Previous No. IC-1990) Date Published August 2000 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark ★ shows major revised points.

DESCRIPTION

The µPC4061 is a J-FET input low-power operational amplifier featuring low supply voltage operation from ±2 V. Supply current is ten times smaller than µPC4081 type J-FET input op-amp. With very low input bias current characteristics, the µPC4061 is an excellent choice for hand-held measurement equipment and other low-power application circuits.

FEATURES

  • Low supply current: 220 µA (TYP.)
  • Very low input bias and offset currents
  • Offset voltage null capability
  • High input impedance...J-FET Input Stage
  • Low supply voltage operation
  • Output short circuit protection
  • Internal frequency compensation

ORDERING INFORMATION

µPC4061C 8-pin plastic DIP (7.62 mm (300)) µPC4061G2 8-pin plastic SOP (5.72 mm (225)) EQUIVALENT CIRCUIT R 1 R 4 R 9 Q 5 Q 9 Q 14 Q 15 Q 16 Q 11 Q 12 Q 10 R 5 R 7 R 8 Q 13 Q 7Q 4Q 3 R 2 R 3 R 6 Q 19 Q 20 R 10 Q 17 Q 18 OUT II IN OFFSET NULL OFFSET NULL V V Q 2Q 1 Q 6 Q 8 C 1 (7) (6) (2) (3) (5)(1) (4) PIN CONFIGURATION (Top View) PC4061C, 4061G2 NC V OUT OFFSET NULL OFFSET NULL I I IN V µ Remark NC : No Connection

Data Sheet G15038EJ3V0DS002 µµ µµPC4061 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Parameter Symbol Ratings Unit Voltage between V and V – Note 1 V – V –0.3 to +36 V Differential Input Voltage VID ±30 V Input Voltage Note 2 VI V –0.3 to V +0.3 V Output Voltage Note 3 VO V –0.3 to V +0.3 V C Package Note 4 350 mWPower Dissipation Note 5 PT 440 mW Output Short Circuit Duration Note 6 Indefinite sec Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V± ±2 ±16 V Output Source Current IO SOURCE 5m A Output Sink Current IO SINK 3.5 mA Capacitive Load (AV = +1, Rf = 0 Ω )C L 100 pF OFFSET VOLTAGE NULL CIRCUIT 100 kΩ VR 1 V Remark The OFFSET NULL pins should be left open or connected to V via a resistor as shown in the left figure. Don't connect to any lines other than V , otherwise mulfunction, degradation, or failure may occur.

Data Sheet G15038EJ3V0DS00 3 µµ µµPC4061 ELECTRICAL CHARACTERISTICS (T A = 25 °C, V±± ±± = ±± ±±15 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage VIO R S ≤ 50 Ω± 2 ±10 mV Input Offset Current Note 7 IIO ±5 ±50 pA Input Bias Current Note 7 IB 10 100 pA Large Signal Voltage Gain AV R L ≥ 10 kΩ , VO = ±10 V 3000 9000 Supply Current ICC IO = 0 A 220 250 µA Common Mode Rejection Ratio CMR 70 90 dB Supply Voltage Rejection Ratio SVR 70 90 dB Output Voltage Swing Vom R L ≥ 10 kΩ± 12 +14.0 –13.6 V Common Model Input Voltage Range V ICM ±12 +15 –13 V Slew Rate SR A V = 1 3 V/µs Unity Gain Frequency funity 1M H z Input Equivalent Noise Voltage Density en R S = 100 Ω , f = 1 kHz 30 nV/ √Hz Input Offset Voltage VIO R S ≤ 50 Ω , TA = –20 to +70 °C ±15m V Average VIO Temperature Drift ΔVIO/ΔTT A = –20 to +70 °C ±10 µV/°C Input Offset Current Note 7 IIO TA = –20 to +70 °C ±2n A Input Bias Current Note 7 IB TA = –20 to +70 °C 3.5 nA Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the junction temperature close to the operating ambient temperature.

Data Sheet G15038EJ3V0DS004 µµ µµPC4061 TYPICAL PERFORMANCE CHARACTERISTICS (T A = 25 °C, TYP.) 600 500 400 300 200 100 0.01 0.1 1.0 100 100 120 100 1 k 10 k ±10 ±20100 k 1 M 10 M −40 −20 0 20 TA - Operating Ambient Temperature - °C INPUT OFFSET VOLTAGE INPUT BIAS CURRENT TA - Operating Ambient Temperature - °C40 60 80 −2 00 2 04 06 08 0 100 10 k 1 M1 k10 100 k 10 M40 60 80 100 PC4061G2 PC4061C TA - Operating Ambient Temperature - °C f - Frequency - Hz V± - Supply Voltage - V LARGE SIGNAL FREQUENCY RESPONSE OUTPUT VOLTAGE SWING f - Frequency - Hz POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE PT - Total Power Dissipation - mWVom - Output Voltage Swing - Vp-p VIO - Input Offset Voltage - mV AV - Open Loop Voltage Gain - dBVom - Output Voltage Swing - Vp-p IB - Input Bias Current - nA V± = ±15 V R L = 10 kΩ µ µ 200 °C/W 227 °C/W V = ±15 V R L = 10 kΩ± V = ±10 V± V = ±5 V± R L = 10 kΩ

Data Sheet G15038EJ3V0DS00 5 µµ µµPC4061 VO - Output Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE t - Time - sµ 5 10 15 Voltage Density - nV/ Hz en - Input Equivalent Noise INPUT EQUIVALENT NOISE VOLTAGE DENSITY f - Frequency - Hz 100 1k 10k 100k ICC - Supply Current - A SUPPLY CURRENT V± - Supply Voltage - V ±50 100 150 200 250 ±10 ±15 ±20 VO − - Negative Output Voltage - V OUTPUT SINK CURRENT LIMITOUTPUT SOURCE CURRENT LIMIT IO SINK - Output Sink Current - mAIO SOURCE - Output Source Current - mA −10 −15 0 51 0 1 5 VO + - Positive Output Voltage - V 0 5 10 15 +10 +15 R S = 100 Ω V = ±15 V TA = 70°C 25°C TA = 70°C 25°C −20°C V = ±15 V −20°C µ V = ±15 V AV = +1 R L = 10 kΩ C L = 100 pF V± = ±15 V VI - Input Voltage - V/ ± ±

Data Sheet G15038EJ3V0DS006 µµ µµPC4061 PACKAGE DRAWINGS (Unit : mm) ITEM MILLIMETERSNOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. P8C-100-300B,C-2 N 0.25 P 0.9 MIN. R0 ∼15° A 10.16 MAX. B 1.27 MAX. F 1.4 MIN. G 3.2± 0.3 J 5.08 MAX. K 7.62 (T.P.) C 2.54 (T.P.) D 0.50± 0.10 H 0.51 MIN. I 4.31 MAX. L 6.4 M 0.25 +0.10 −0.05 2. ltem "K" to center of leads when formed parallel. M A RM PI J H G F DN C B 8-PIN PLASTIC DIP (7.62mm(300)) L K

Data Sheet G15038EJ3V0DS00 7 µµ µµPC4061 ITEM B C I 8-PIN PLASTIC SOP (5.72 mm (225)) D E F G H J P MILLIMETERS 1.27 (T.P.) 0.78 MAX. 4.4±0.15 0.1±0.1 0.42 1.59±0.21 6.5±0.3 1.49 +0.08 −0.07 1.1±0.2 3°+7° −3° NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. A 5.2 +0.17 −0.20 K L M N 0.6±0.2 0.17 0.12 0.10 +0.08 −0.07 S8GM-50-225B-6 1 4 S M C detail of lead end A M S N F G B E D P H I J K L

Data Sheet G15038EJ3V0DS008 µµ µµPC4061 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E) . Type of Surface Mount Device µµ µµPC4061G2: 8-pin plastic SOP (5.72 mm (225)) Process Conditions Symbol Infrared Ray Reflow Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. IR30-00-1 Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. VP15-00-1 Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). WS60-00-1 Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µµ µµPC4061C: 8-pin plastic DIP (7.62 mm (300)) Process Conditions Wave Soldering (only to leads) Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.

Data Sheet G15038EJ3V0DS00 9 µµ µµPC4061 [MEMO]

Data Sheet G15038EJ3V0DS0010 µµ µµPC4061 [MEMO]

Data Sheet G15038EJ3V0DS00 11 µµ µµPC4061 [MEMO]

µµ µµPC4061 M8E 00. 4 The information in this document is current as of August, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).