UPC3232TB-E3

UPC3232TB NEC | Alldatasheet

Document overview

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Technical content

2005, 2006

DESCRIPTION

The µPC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

FEATURES

• Low current : I CC = 26.0 mA TYP.  Medium output power : P O (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : P O (sat) = +12.0 dBm TYP. @ f = 2.2 GHz  High linearity : P O (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : P O (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz  Power gain : G P = 32.8 dB MIN. @ f = 1.0 GHz : G P = 33.5 dB MIN. @ f = 2.2 GHz  Gain flatness : ∆GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz  Noise figure : NF = 4 dB TYP. @ f = 1.0 GHz : NF = 4.1 dB TYP. @ f = 2.2 GHz  Supply voltage : V CC = 4.5 to 5.5 V  Port impedance : input/output 50 Ω

APPLICATIONS

 IF amplifiers in LNB for DBS converters etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form µPC3232TB-E3 µPC3232TB-E3-A 6-pin super minimold (Pb-Free) C3S • Embossed tape 8 mm wide

• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3232TB DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB

5 V, SILICON GERMANIUM MMIC

MEDIUM OUTPUT POWER AMPLIFIER Document No. PU10597EJ01V0DS (1st edition) Date Published May 2006 NS CP(K) Printed in Japan

Pin No. Pin Name

1 OUTPUT

2 GND

3 V CC

4 INPUT

5 GND

(Top View) C3S (Bottom View) (Top View)

6 GND

PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Part No. PO (sat) (dBm) GP (dB) NF (dB) ICC (mA) Package Marking µPC2708TB +10.0 15.0 6.5 26 6-pin super minimold C1D µPC2709TB +11.5 23.0 5.0 25 C1E µPC2710TB +13.5 33.0 3.5 22 C1F µPC2776TB +8.5 23.0 6.0 25 C2L µPC3223TB +12.0 23.0 4.5 19 C3J µPC3225TB +15.5 Note 32.5 Note 3.7 Note

24.5 C3M

µPC3226TB +13.0 25.0 5.3 15.5 C3N µPC3232TB +15.5 32.8 4.0 26 C3S Note µPC3225TB is f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Data Sheet PU10597EJ01V0DS 2 µPC3232TB

Parameter Symbol Conditions Ratings Unit Supply Voltage V CC T A = +25°C 6.0 V Total Circuit Current I CC T A = +25°C 45 mA Power Dissipation P D T A = +85°C Note 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in T A = +25°C 0 dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage V CC 4.5 5.0 5.5 V Operating Ambient Temperature T A −40 +25 +85 °C Data Sheet PU10597EJ01V0DS 3 µPC3232TB

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No input signal 20 26 32 mA Power Gain 1 G P1 f = 0.25 GHz, P in = −35 dBm 29 31.5 34 dB Power Gain 2 G P2 f = 1.0 GHz, P in = −35 dBm 30 32.8 35.5 Power Gain 3 G P3 f = 1.8 GHz, P in = −35 dBm 31 33.8 37 Power Gain 4 G P4 f = 2.2 GHz, P in = −35 dBm 30.5 33.5 36.5 Power Gain 5 G P5 f = 2.6 GHz, P in = −35 dBm 29 32.2 35.5 Power Gain 6 G P6 f = 3.0 GHz, P in = −35 dBm 27 30.7 34 Gain Flatness ∆GP f = 1.0 to 2.2 GHz, P in = −35 dBm − 1.0 − dB K factor 1 K1 f = 1.0 GHz, P in = −35 dBm − 1.3 − − K factor 2 K2 f = 2.2 GHz, P in = −35 dBm − 1.9 − − Saturated Output Power 1 P O (sat) 1 f = 1.0 GHz, P in = 0 dBm +13 +15.5 − dBm Saturated Output Power 2 P O (sat) 2 f = 2.2 GHz, P in = −5 dBm +9.5 +12 − Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz +8 +11 − dBm Gain 1 dB Compression Output Power 2 P O (1 dB) 2 f = 2.2 GHz +6 +8.5 − Noise Figure 1 NF1 f = 1.0 GHz − 4 4.8 dB Noise Figure 2 NF2 f = 2.2 GHz − 4.1 4.9 Isolation 1 ISL1 f = 1.0 GHz, P in = −35 dBm 36 41 − dB Isolation 2 ISL2 f = 2.2 GHz, P in = −35 dBm 38 45 − Input Return Loss 1 RL in1 f = 1.0 GHz, P in = −35 dBm 9.5 13 − dB Input Return Loss 2 RL in2 f = 2.2 GHz, P in = −35 dBm 10 14.5 − Output Return Loss 1 RL out1 f = 1.0 GHz, P in = −35 dBm 12 15.5 − dB Output Return Loss 2 RL out2 f = 2.2 GHz, P in = −35 dBm 12 15 − Input 3rd Order Distortion Intercept Point 1 IIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − −9 − dBm Input 3rd Order Distortion Intercept Point 2 IIP 32 f1 = 2 200 MHz, f2 = 2 201 MHz − −15.5 − Output 3rd Order Distortion Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − +23.5 − dBm Output 3rd Order Distortion Intercept Point 2 OIP 32 f1 = 2 200 MHz, f2 = 2 201 MHz − +18 − 2nd Order Intermodulation Distortion IM 2 f1 = 1 000 MHz, f2 = 1 001 MHz, Pout = −5 dBm/tone − 50 − dBc 2nd Harmonic 2f0 f0 = 1.0 GHz, P out = −15 dBm − 70 − dBc Data Sheet PU10597EJ01V0DS 4 µPC3232TB

2, 5, 6 33 pF OUT GND 1 000 pF 47 nH 68 nH 560 Ω l1 l2 Length of microstrip line : l1 = 2.25 mm l2 = 2.75 mm The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

R1 Chip Resistance 560 Ω L1 Chip Inductor 47 nH L2 Chip Inductor 68 nH C1 Chip Capacitor 100 pF C2 Chip Capacitor 33 pF C3, C4 Chip Capacitor 1 000 pF C5 Chip Capacitor 39 pF C6 Feed-through Capacitor 1 000 pF INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC, to output medium power. To suppl y current for output transistor, connect an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the out put transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor ma kes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable (Refer to the following page). CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the V CC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of V CC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connec ted to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwar ds, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet PU10597EJ01V0DS 5 µPC3232TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C6: Feed-through Capacitor L1 R1 2.75 mm2.25 mm Notes 1. 19 × 21.46 × 0.51 mm double sided copper clad RO4003C (Rogers) board. 2. Back side: GND pattern 3. Au plated on pattern : Through holes 5. L1, L2: FDK’s products COMPONENT LIST Value Size R1 560 Ω 1005 L1 47 nH 1005 L2 68 nH 1005 C1 100 pF 1608 C2 33 pF 1608 C3, C4 1 000 pF 1005 C5 39 pF 1608 C6 1 000 pF Feed-through Capacitor Data Sheet PU10597EJ01V0DS 6 µPC3232TB

TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified) 0 1 23456 +25˚C –40˚C TA = +85˚C No Input Signal –20 –40 –60 VCC = 4.5 to 5.5 V 1: –40.01 dB

0.25 GHz

2: –41.32 dB

1 GHz

3: –46.39 dB

2.2 GHz

4: –48.59 dB

2.6 GHz

Frequency f (GHz) ISOLATION vs. FREQUENCY Isolation ISL (dB) CIRCUIT CURRENT vs. SUPPLY VOLTAGECircuit Current ICC (mA) Supply Voltage VCC (V) –50 –25 0 25 50 75 100 No Input Signal CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Circuit Current ICC (mA) Operating Ambient Temperature TA (°C) –10 –20 5.5 V VCC = 4.5 V 5.0 V 1: –12.35 dB 2: –12.47 dB 3: –13.77 dB 4: –14.45 dB INPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) 42 3 Input Return Loss RLin (dB) –10 –20 4.5 V VCC = 5.5 V 5.0 V 1: –14.38 dB 2: –15.52 dB 3: –14.84 dB 4: –16.50 dB Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) 4.5 V VCC = 5.5 V 5.0 V 1: 31.56 dB 2: 32.71 dB 3: 33.37 dB 4: 32.14 dB Frequency f (GHz) POWER GAIN vs. FREQUENCY Power Gain GP (dB) 2 3 Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 7 µPC3232TB

–10 –15 –20 –10 –15 –20 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 4.5 V VCC = 5.5 Vf = 1.0 GHz TA = +85˚C +25˚C –40˚C f = 2.2 GHz 4.5 V VCC = 5.5 V 5.0 V VCC = 4.5 V 5.5 V 5.0 V 5.0 V NOISE FIGURE vs. FREQUENCY Frequency f (GHz) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY Frequency f (GHz) Noise Figure NF (dB) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 8 µPC3232TB

f1 = 1 000 MHz f2 = 1 001 MHz Pout IM3 Pout Pout IM2 Pout IM3 4.5 V VCC = 5.5 V 5.0 V 2f0 3f0 Pout 2f0 3f0 f1 = 2 200 MHz f2 = 2 201 MHz f1 = 1 000 MHz f2 = 1 001 MHz f = 1 000 MHz f1 = 1 000 MHz f2 = 1 001 MHz f = 2 200 MHz OUTPUT POWER, 2ND HARMONIC, 3RD HARMONIC vs. INPUT POWER OUTPUT POWER, 2ND HARMONIC, 3RD HARMONIC vs. INPUT POWER Output Power Pout (dBm) 2nd Harmonic 2f0 (dBc) 3rd Harmonic 3f0 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power Pin (dBm) OUTPUT POWER, IM2 vs. INPUT POWER Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) Input Power Pin (dBm) IM2 vs. INPUT POWER 2nd Order Intermodulation Distortion IM2 (dBc) Input Power Pin (dBm) Input Power Pin (dBm)Input Power Pin (dBm) Output Power Pout (dBm) 2nd Harmonic 2f0 (dBc) 3rd Harmonic 3f0 (dBc) –10 –20 –30 –40 –50 –60 –70 –10 –20 –30 –40 –50 –60 –70 –10 –20 –30 –40 –50 –60 –70 –80 –90 –10 –20 –30 –40 –50 –60 –70 –80 –90 –10 –20 –30 –40 –50 –60 –70 Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 9 µPC3232TB

S-PARAMETERS (TA = +25°C, VDD = VCC = 5.0 V, Pin = −35 dBm) S11−FREQUENCY 1 : 81.254 Ω –9.457 Ω 67.317 pF

250 MHz

2 : 46.533 Ω –23.434 Ω 3 : 35.576 Ω 10.355 Ω 4 : 45.572 Ω 17.93 Ω START : 100.000 000 MHz STOP : 3 100.000 000 MHz S22−FREQUENCY 1 : 44.955 Ω 17.123 Ω 10.901 nH 2 : 48.875 Ω –16.785 Ω 3 : 51.383 Ω 18.615 Ω 4 : 66.562 Ω 5.5 Ω START : 100.000 000 MHz STOP : 3 100.000 000 MHz Data Sheet PU10597EJ01V0DS 10 µPC3232TB

S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet PU10597EJ01V0DS 11 µPC3232TB

6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 2.0±0.2 1.3 0.650.65 1.25±0.1 2.1±0.1 0.1 MIN. Data Sheet PU10597EJ01V0DS 12 µPC3232TB

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperatur e (terminal temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating). Data Sheet PU10597EJ01V0DS 13 µPC3232TB

The information in this document is current as of May, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific": Data Sheet PU10597EJ01V0DS 14 µPC3232TB

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ For further information, please contact µPC3232TB