UPC3227TB

UPC3227TB NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

FEATURES

• Low current : I CC = 4.8 mA TYP. @ VCC = 5.0 V  Output power : P O (sat) = −1.0 dBm TYP. @ f = 1.0 GHz : P O (sat) = −3.5 dBm TYP. @ f = 2.2 GHz  High linearity : P O (1dB) = −6.5 dBm TYP. @ f = 1.0 GHz : P O (1dB) = −8.0 dBm TYP. @ f = 2.2 GHz  Power gain : G P = 22.0 dB TYP. @ f = 1.0 GHz : G P = 22.0 dB TYP. @ f = 2.2 GHz  Noise Figure : NF = 4.7 dB TYP. @ f = 1.0 GHz : NF = 4.6 dB TYP. @ f = 2.2 GHz  Supply voltage : V CC = 4.5 to 5.5 V  Port impedance : input/output 50 Ω

APPLICATIONS

 IF amplifiers in LNB for DBS converters etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form µPC3227TB-E3 µPC3227TB-E3-A 6-pin super minimold (Pb-Free) Note C3P Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Note With regards to terminal solder (the solder contai ns lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: µPC3227TB DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3227TB

5 V, SILICON GERMANIUM MMIC

Document No. PU10557EJ02V0DS (2nd edition) Date Published July 2005 CP(K) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2005

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name

1 INPUT

2 GND

3 GND

4 OUTPUT

5 GND

(Top View) C3P (Bottom View) (Top View)

6 V CC

PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC WIDEBAND AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = 5.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) PO (sat) (dBm) GP (dB) NF (dB) ICC (mA) Package Marking µPC2711TB 2.9 +1.0 13 5.0 12 6-pin super minimold C1G µPC2712TB 2.6 +3.0 20 4.5 12 C1H µPC3215TB Note 2.9 +3.5 20.5 2.3 14 C3H µPC3227TB 3.2 −1.0 22 4.7 4.8 C3P Note µPC3215TB is f = 1.5 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Data Sheet PU10557EJ02V0DS 2 µPC3227TB

Parameter Symbol Conditions Ratings Unit Supply Voltage V CC T A = +25°C 6.0 V Total Circuit Current I CC T A = +25°C 15 mA Power Dissipation P D T A = +85°C Note 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in T A = +25°C +10 dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage V CC 4.5 5.0 5.5 V Operating Ambient Temperature T A −40 +25 +85 °C Data Sheet PU10557EJ02V0DS 3 µPC3227TB

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No input signal 4.0 4.8 6.0 mA Power Gain 1 G P1 f = 0.1 GHz, P in = −40 dBm 20.5 22.5 24.5 dB Power Gain 2 G P2 f = 1.0 GHz, P in = −40 dBm 19.5 22.0 24.5 Power Gain 3 G P3 f = 1.8 GHz, P in = −40 dBm 19.0 22.0 25.0 Power Gain 4 G P4 f = 2.2 GHz, P in = −40 dBm 19.0 22.0 25.0 Power Gain 5 G P5 f = 2.6 GHz, P in = −40 dBm 19.0 22.0 25.0 Power Gain 6 G P6 f = 3.0 GHz, P in = −40 dBm 18.0 21.0 24.5 Saturated Output Power 1 P O (sat) 1 f = 1.0 GHz, P in = −12 dBm −3.5 −1.0 − dBm Saturated Output Power 2 P O (sat) 2 f = 2.2 GHz, P in = −12 dBm −6.0 −3.5 − Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz −9.0 −6.5 − dBm Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz −11.0 −8.0 − Noise Figure 1 NF1 f = 1.0 GHz − 4.7 5.5 dB Noise Figure 2 NF2 f = 2.2 GHz − 4.6 5.5 Isolation 1 ISL1 f = 1.0 GHz, P in = −40 dBm 35 40 − dB Isolation 2 ISL2 f = 2.2 GHz, P in = −40 dBm 35 43 − Input Return Loss 1 RL in1 f = 1.0 GHz, P in = −40 dBm 7.5 10.5 − dB Input Return Loss 2 RL in2 f = 2.2 GHz, P in = −40 dBm 7.5 10.5 − Output Return Loss 1 RL out1 f = 1.0 GHz, P in = −40 dBm 10.0 13.5 − dB Output Return Loss 2 RL out2 f = 2.2 GHz, P in = −40 dBm 7.5 9.5 − Input 3rd Order Distortion Intercept Point 1 IIP31 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −40 dBm − −18.0 − dBm Input 3rd Order Distortion Intercept Point 2 IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −40 dBm − −20.5 − Output 3rd Order Distortion Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −40 dBm − +4.0 − dBm Output 3rd Order Distortion Intercept Point 2 OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −40 dBm − +1.5 − 2nd Order Intermodulation Distortion IM 2 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −40 dBm − 30.5 − dBc K factor 1 K1 f = 1.0 GHz − 3.8 − − K factor 2 K2 f = 2.2 GHz − 3.9 − − Data Sheet PU10557EJ02V0DS 4 µPC3227TB

50 Ω 2, 3, 5 100 pF C2 50 Ω OUT 1 000 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

C1, C2 Chip Capacitor 100 pF C3 Chip Capacitor 1 000 pF C4 Feed-through Capacitor 1 000 pF CAPACITORS FOR VCC AND INPUT PINS Bypass capacitor for V CC pin is intended to minimize V CC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. Data Sheet PU10557EJ02V0DS 5 µPC3227TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN OUT VCC AMP-2 C1 C2 Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern : Through holes COMPONENT LIST Value C1, C2 100 pF C3, C4 1 000 pF Data Sheet PU10557EJ02V0DS 6 µPC3227TB

TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified) 01 3 24 5 6 –60 –40 0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 –20 20 60 80 100 0.1 0.3 0.5 4.0 –10 –20 –30 –40 –50 –60 2.01.0 0.1 0.3 0.5 4.0 –10 –15 –20 –25 –30 –10 –15 –20 –25 –30 2.01.0 +25°C –40°C TA = +85°C 5.0 V VCC = 5.5 V 4.5 V VCC = 4.5 V 5.5 V5.0 V VCC = 4.5 V 5.0 V 5.5 V VCC = 4.5 V 5.5 V5.0 V CIRCUIT CURRENT vs. SUPPLY VOLTAGECircuit Current ICC (mA) Supply Voltage VCC (V) No Input Signal No Input Signal CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Circuit Current ICC (mA) Operating Ambient Temperature TA (°C) POWER GAIN vs. FREQUENCY Frequency f (GHz) Power Gain GP (dB) ISOLATION vs. FREQUENCY Frequency f (GHz) Isolation ISL (dB) INPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Input Return Loss RLin (dB) OUTPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Output Return Loss RLout (dB) Remark The graphs indicate nominal characteristics. Data Sheet PU10557EJ02V0DS 7 µPC3227TB

–10 –15 –20 f = 1.0 GHz +5 –10 –15 –20 f = 2.2 GHz 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 1 000 3 0001 500500 2 5002 000 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 1 000 3 0001 500500 2 5002 000 VCC = 5.5 V 5.0 V 4.5 V VCC = 5.5 V 5.0 V 4.5 V VCC = 4.5 V 5.0 V5.5 V +25°C –40°C TA = +85°C OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) NOISE FIGURE vs. FREQUENCY Frequency f (MHz) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY Frequency f (MHz) Noise Figure NF (dB) Remark The graphs indicate nominal characteristics. Data Sheet PU10557EJ02V0DS 8 µPC3227TB

+10 –10 –20 –30 –40 –50 –60 –70 –80 f1 = 1 000 MHz f2 = 1 001 MHz IM3 Pout +10 –10 –20 –30 –40 –50 –60 –70 –80 f1 = 2 200 MHz f2 = 2 201 MHz IM3 Pout +10 –10 –20 –30 –40 –50 –60 –70 –80 IM2 Pout –50 OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power Pin (dBm) OUTPUT POWER, IM2 vs. INPUT POWER Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) Input Power Pin (dBm) IM2 vs. INPUT POWER 2nd Order Intermodulation Distortion IM2 (dBc) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10557EJ02V0DS 9 µPC3227TB

S-PARAMETERS (TA = +25°C, VCC = 5.0 V, Pin = −40 dBm) S11−FREQUENCY 1 : 1 000 MHz 91.02 Ω− 2.3789 Ω 2 : 2 200 MHz 82.914 Ω− 26.738 Ω START : 100.000 000 MHz STOP : 5 100.000 000 MHz S22−FREQUENCY 1 : 1 000 MHz 77.086 Ω 6.1797 Ω 2 : 2 200 MHz 92.535 Ω− 28.438 Ω START : 100.000 000 MHz STOP : 5 100.000 000 MHz Data Sheet PU10557EJ02V0DS 10 µPC3227TB

6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 2.0±0.2 1.3 0.650.65 1.25±0.1 2.1±0.1 0.1 MIN. Data Sheet PU10557EJ02V0DS 11 µPC3227TB

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperatur e (terminal temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating). Data Sheet PU10557EJ02V0DS 12 µPC3227TB

When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. M8E 00. 4 - 0110 The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product be fore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10557EJ02V0DS 13 µPC3227TB

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 For further information, please contact µPC3227TB