UPC3225TB

UPC3225TB NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

FEATURES

• Wideband response : f u = 2.8 GHz TYP. @ 3 dB bandwidth  Low current : I CC = 24.5 mA TYP.  Medium output power : P O (sat) = +15.5 dBm TYP. @ f = 0.95GHz : P O (sat) = +12.5 dBm TYP. @ f = 2.15 GHz  High linearity : P O (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz : P O (1dB) = +7.0 dBm TYP. @ f = 2.15 GHz  Power gain : G P = 32.5 dB TYP. @ f = 0.95 GHz : G P = 33.5 dB TYP. @ f = 2.15 GHz  Noise Figure : NF = 3.7 dB TYP. @ f = 0.95 GHz : NF = 3.7 dB TYP. @ f = 2.15 GHz  Supply voltage : V CC = 4.5 to 5.5 V  Port impedance : input/output 50 Ω

APPLICATIONS

 IF amplifiers in LNB for DBS converters etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form µPC3225TB-E3 µPC3225TB-E3-A 6-pin super minimold (Pb-Free) Note C3M Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Note With regards to terminal solder (the solder contai ns lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3225TB. DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3225TB

5 V, SILICON GERMANIUM MMIC

MEDIUM OUTPUT POWER AMPLIFIER Document No. PU10500EJ01V0DS (1st edition) Date Published December 2004 CP(K) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2004

Pin No. Pin Name

1 OUTPUT

2 GND

3 V CC

4 INPUT

5 GND

(Top View) (Bottom View)

6 GND

PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) PO (sat) (dBm) GP (dB) NF (dB) ICC (mA) Package Marking µPC2708TB 2.9 +10.0 15 6.5 26 6-pin super minimold C1D µPC2709TB 2.3 +11.5 23 5.0 25 C1E µPC2710TB 1.0 +13.5 33 3.5 22 C1F µPC2776TB 2.7 +8.5 23 6.0 25 C2L µPC3223TB 3.2 +12.0 23 4.5 19 C3J µPC3225TB 2.8 +15.5 Note 32.5 Note 3.7 Note

24.5 C3M

Note f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Data Sheet PU10500EJ01V0DS 2 µPC3225TB

No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications 4 INPUT − 0.98 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of h FE and resistance. This pin must be coupled to signal source with capacitor for DC cut.

1 OUTPUT Voltage

− Signal output pin. The inductor must be attached between V CC and output pins to supply current to the internal output transistors. 3 V CC 4.5 to 5.5 − Power supply pin. Which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. Note Pin voltage is measured at VCC = 5.0 V Data Sheet PU10500EJ01V0DS 3 µPC3225TB

Parameter Symbol Conditions Ratings Unit Supply Voltage V CC T A = +25°C, Pin 1 and 3 6 V Total Circuit Current I CC T A = +25°C 45 mA Power Dissipation P D T A = +85°C Note 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in T A = +25°C 0 dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage V CC The same voltage should be applied to pin 1 and 3. 4.5 5.0 5.5 V Operating Ambient Temperature T A −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No input signal 20.0 24.5 31.0 mA f = 0.95 GHz, Pin = －5.0 dBm +13.5 +15.5 − dBm Saturated Output Power P O (sat) f = 0.95 GHz +7.0 +9.0 − dBm Gain 1 dB Compression Output Power P O (1 dB) f = 0.95 GHz − 3.7 4.5 dB Noise Figure NF f = 2.15 GHz − 3.7 4.5 Upper Limit Operating Frequency f u 3 dB down below flat gain at f = 0.95 GHz − 2.8 − GHz f = 0.95 GHz, Pin = −35.0 dBm 36.0 41.0 − dB Isolation ISL f = 2.15 GHz, Pin = −35.0 dBm 36.0 45.0 − f = 0.95 GHz, Pin = −35.0 dBm 7.0 8.5 − dB Input Return Loss RL in f = 2.15 GHz, Pin = −35.0 dBm 8.0 11.0 − f = 0.95 GHz, Pin = −35.0 dBm 7.0 10.5 − dB Output Return Loss RL out f = 2.15 GHz, Pin = −35.0 dBm 9.5 13.0 − Gain Flatness ∆GP f = 0.95 to 2.15 GHz − 2.5 4.0 dB Data Sheet PU10500EJ01V0DS 4 µPC3225TB

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions Reference Value Unit f = 0.95 GHz 21.0 dBm Output intercept point OIP 3 f = 2.15 GHz 16.0 Data Sheet PU10500EJ01V0DS 5 µPC3225TB

50 ΩOUT GND GND GND IN V CC The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

C3 1 000 pF Murata GMR39CH C4 1 000 pF Murata GMR36B L1 15 nH Susumu TFL0816 INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 24.5 mA, to output medium power. To supply current for output transistor, connect an inductor between the V CC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the out put transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor ma kes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the V CC pin. Capacitors of 330 pF for the input pin and 100 pF for the output pin are recommendable as the coupling capacitors. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of V CC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connec ted to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. Data Sheet PU10500EJ01V0DS 6 µPC3225TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern : Through holes COMPONENT LIST Value C1 330 pF C2 100 pF C3, C4 1 000 pF L1 15 nH 4 5 3 2 1 Data Sheet PU10500EJ01V0DS 7 µPC3225TB C1 C2 C4 L1

TYPICAL CHARACTERISTICS (VCC = 5.0 V, TA = +25°C, unless otherwise specified) Circuit Current ICC (mA) Supply Voltage VCC (V) 01 3 VCC = 5.0 V TA = − 40°C +25°C +85°C 2 4567 Circuit Current ICC (mA) Operating Ambient Temperature TA (°C) − 60 − 40 0 26.0 25.5 25.5 24.5 24.5 23.5 23.0 22.5 VCC = 5.0 V − 20 20 60 80 100 40 0 1.0 2.0 4.0 3.0 Frequency f (GHz) Power Gain GP (dB) − 15 − 25 − 35 − 45 − 55 − 650 1.0 2.0 4.0 3.0 Isolation ISL (dB) Frequency f (GHz) VCC = 4.5 V 5.0 V 5.5 V VCC = 4.5 V 5.0 V 5.5 V CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY 0 1.0 2.0 4.0 3.0 VCC = 5.0 V POWER GAIN vs. FREQUENCY Frequency f (GHz) Power Gain GP (dB) TA = − 40°C +25°C +85°C − 15 − 25 − 35 − 45 − 55 − 650 1.0 2.0 4.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) VCC = 5.0 V TA = − 40°C +25°C +85°C Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 8 µPC3225TB

0 1.0 2.0 4.0 − 4 − 8 − 12 − 16 − 20 3.0 VCC = 5.0 V Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) TA = − 40°C +25°C +85°C f = 950 MHz VCC = 4.5 V 5.0 V 5.5 V f = 1 500 MHz VCC = 4.5 V 5.0 V 5.5 V Power Gain GP (dB) Input Power Pin (dBm) POWER GAIN vs. INPUT POWER Power Gain GP (dB) Input Power Pin (dBm) POWER GAIN vs. INPUT POWER − 4 − 8 − 12 − 16 − 20 − 240 1.0 2.0 4.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) VCC = 5.0 V TA = − 40°C +25°C +85°C 0 1.0 2.0 4.0 − 4 − 8 − 12 − 16 − 20 3.0 Frequency f (GHz) Input Return Loss RLin (dB) VCC = 4.5 V 5.0 V 5.5 V INPUT RETURN LOSS vs. FREQUENCY − 4 − 8 − 12 − 16 − 20 − 240 1.0 2.0 4.0 3.0 Output Return Loss RLout (dB) Frequency f (GHz) VCC = 4.5 V 5.0 V 5.5 V OUTPUT RETURN LOSS vs. FREQUENCY Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 9 µPC3225TB

f = 2 150 MHz VCC = 4.5 V 5.0 V 5.5 V POWER GAIN vs. FREQUENCY Power Gain GP (dB) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) − 45 − 35 − 25 − 5 − 6 − 12 − 15 VCC = 5.0 V f = 950 MHz 1 500 MHz 2 150 MHz − 2 − 4 − 6 − 8 f = 950 MHz VCC = 4.5 V 5.0 V 5.5 V OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) − 2 − 4 − 6 − 8 f = 1 500 MHz VCC = 4.5 V 5.0 V 5.5 V OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) − 40 − 30 − 25 − 5 − 2 − 4 − 6 − 8 − 20 f = 950 MHz TA = − 40°C +25°C +85°C − 35 − 15 − 10 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) − 40 − 30 − 25 − 5 − 2 − 4 − 6 − 8 − 20 f = 1 500 MHz TA = − 40°C +25°C +85°C − 35 − 15 − 10 Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 10 µPC3225TB

− 10 − 20 − 30 − 40 − 50 − 60 TA = − 40°C +25°C +85°C f = 950/951 MHz − 10 Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) − 10 − 20 − 30 − 40 − 50 − 60 VCC = 4.5 V 5.0 V 5.5 V f = 950/951 MHz − 10 Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) OUTPUT POWER (2 TONES) vs. INPUT POWER OUTPUT POWER (2 TONES) vs. INPUT POWER − 2 − 4 − 6 − 8 f = 2 150 MHz VCC = 4.5 V5.0 V 5.5 V OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) − 40 − 30 − 25 − 5 − 2 − 4 − 6 − 8 − 20 f = 2 150 MHz TA = − 40°C +25°C +85°C − 35 − 15 − 10 VCC = 5.0 V, f = 1 MHz f = 950/951 MHz : OIP 3 = 21.0 dBm f = 1 500/1 501 MHz : OIP3 = 18.2 dBm f = 2 150/2 151 MHz : OIP3 = 16.0 dBm ∆20 − 10 − 20 − 30 − 40 − 50 − 60 f = 950 MHz 1 500 MHz 2 150 MHz OUTPUT POWER (2 TONES) vs. INPUT POWER Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 11 µPC3225TB

− 10 − 20 − 30 − 40 − 50 − 60 VCC = 4.5 V 5.0 V 5.5 V f = 1 500/1 501 MHz − 10 Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) − 10 − 20 − 30 − 40 − 50 − 60 VCC = 4.5 V 5.0 V 5.5 V f = 2 150/2 151 MHz − 10 Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) − 10 − 20 − 30 − 40 − 50 − 60 TA = − 40°C +25°C +85°C f = 1 500/1 501 MHz − 10 Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) − 10 − 20 − 30 − 40 − 50 − 60 TA = − 40°C +25°C +85°C f = 2 150/2 151 MHz − 10 Output Power (2 tones) Pout/tone (dBm) Input Power Pin/tone (dBm) 5.0 4.8 4.6 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 0 1 000 3 0001 500500 VCC = 4.5 V 5.0 V 5.5 V 2 5002 000 NOISE FIGURE vs. FREQUENCY Frequency f (GHz) Noise Figure NF (dB) OUTPUT POWER (2 TONES) vs. INPUT POWER OUTPUT POWER (2 TONES) vs. INPUT POWER OUTPUT POWER (2 TONES) vs. INPUT POWER OUTPUT POWER (2 TONES) vs. INPUT POWER Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 12 µPC3225TB

S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V) S11−FREQUENCY 1 : 950 MHz 100.41 Ω− 31.537 Ω 5.3124 pF 2 : 1 600 MHz 58.686 Ω− 47.725 Ω 2.0843 pF 3 : 2 150 MHz 39.938 Ω− 24.401 Ω 3.0338 pF START : 100.000 000 MHz STOP : 3 000.000 000 MHz S22−FREQUENCY 1 : 950 MHz 60.637 Ω 32.730 Ω 5.4835 nH 2 : 1 600 MHz 70.195 Ω− 20.405 Ω 4.8754 pF 3 : 2 150 MHz 44.370 Ω− 14.407 Ω 5.1383 pF START : 100.000 000 MHz STOP : 3 000.000 000 MHz Data Sheet PU10500EJ01V0DS 13 µPC3225TB

6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 2.0±0.2 1.3 0.650.65 1.25±0.1 2.1±0.1 0.1 MIN. Data Sheet PU10500EJ01V0DS 14 µPC3225TB

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperatur e (terminal temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating). Data Sheet PU10500EJ01V0DS 15 µPC3225TB

M8E 00. 4 - 0110 The information in this document is current as of December, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10500EJ01V0DS 16 µPC3225TB

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPC3225TB