UPC3223TB

UPC3223TB NEC | Alldatasheet

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Technical content

DESCRIPTION

The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.

FEATURES

• Wideband response : fu = 3.2 GHz TYP. @ 3 dB bandwidth  Medium output power : PO (sat) = +12.0 dBm @ f = 1.0 GHz : P O (sat) = +9.0 dBm @ f = 2.2 GHz  High linearity : P O (1 dB) = +6.5 dBm @ f = 1.0 GHz : P O (1 dB) = +5.0 dBm @ f = 2.2 GHz  Power gain : G P = 23.0 dB TYP. @ f = 1.0 GHz : G P = 23.0 dB TYP. @ f = 2.2 GHz  Supply voltage : V CC = 4.5 to 5.5 V  Port impedance : input/output 50 Ω APPLICATION  IF amplifiers in DBS converters etc.

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC3223TB-E3 6-pin super minimold C3J • Embossed tape 8 mm wide

• 1, 2, 3 pins face the perforation side of tape
• Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC3223TB DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3223TB Document No. PU10491EJ01V0DS (1st edition) Date Published May 2004 CP(K) Printed in Japan  NEC Compound Semiconductor Devices 2004

5 V, SILICON MMIC

MEDIUM OUTPUT POWER AMPLIFIER

Pin No. Pin Name

1 INPUT

2 GND

3 GND

4 OUTPUT

5 GND

(Top View) (Bottom View)

6 V CC

PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω ) Part No. fu (GHz) PO(sat) (dBm) G P (dB) NF (dB) ICC (mA) Package Marking µPC2708TB 2.9 +10.0 15 6.5 26 6-pin super minimold C1D µPC2709TB 2.3 +11.5 23 5.0 25 C1E µPC2710TB 1.0 +13.5 33 3.5 22 C1F µPC2776TB 2.7 +8.5 23 6.0 25 C2L µPC3223TB 3.2 +12.0 23 4.5 19 C3J Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Data Sheet PU10491EJ01V0DS 2 µPC3223TB

No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications INPUT – 0.96 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuits is designed to cancel the deviations of h FE and resistance. This pin must be coupled to signal source with capacitor for DC cut.

4 OUTPUT Voltage as

– Signal output pin. The inductor must be attached between V CC and output pins to supply current to the internal output transistors. 6 V CC 4.5 to 5.5 – Power suplly pin. Witch biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. GND 0 – Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Note Pin Voltage is measured at VCC = 5.0 V Data Sheet PU10491EJ01V0DS 3 µPC3223TB

Parameter Symbol Conditions Ratings Unit Supply Voltage V CC T A = +25°C, Pin 4 and 6 6.0 V Total Circuit Current I CC T A = +25°C 40 mA Power Dissipation P D T A = +85°C Note 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in T A = +25°C +10 dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage V CC The same voltage should be applied to pin 4 and 6. 4.5 5.0 5.5 V Operating Ambient Temperature T A −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (T A = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω ) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No input signal 15.0 19.0 24.0 mA Power Gain G P f = 1.0 GHz, Pin = −30 dBm 20.5 23.0 25.5 dB f = 2.2 GHz, P in = −30 dBm 20.0 23.0 26.0 Saturated Output Power P O (sat) f = 1.0 GHz, Pin = −5 dBm +9.0 +12.0 − dBm f = 2.2 GHz, P in = −5 dBm +6.0 +9.0 − PO (1 dB) f = 1.0 GHz +4.5 +6.5 − dBm Gain 1 dB Compression Output Power f = 2.2 GHz +3.0 +5.0 − Noise Figure NF f = 1.0 GHz − 4.5 6.0 dB f = 2.2 GHz − 4.0 5.5 Upper Limit Operating Frequency f u 3 dB down below flat gain at f = 0.1 GHz 2.8 3.2 − GHz Isolation ISL f = 1.0 GHz, P in = −30 dBm 28.0 33.0 − dB f = 2.2 GHz, P in = −30 dBm 28.0 33.0 − Input Return Loss RL in f = 1.0 GHz, Pin = −30 dBm 9.0 12.0 − dB f = 2.2 GHz, P in = −30 dBm 12.0 17.5 − Output Return Loss RL out f = 1.0 GHz, Pin = −30 dBm 9.0 12.0 − dB f = 2.2 GHz, P in = −30 dBm 9.0 12.0 − Gain Flatness ∆G P f = 0.1 to 2.2 GHz − ±0.9 − dB Data Sheet PU10491EJ01V0DS 4 µPC3223TB

OTHER CHARACTERISTICS, FOR RE FERENCE PURPOSES ONLY (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω ) Parameter Symbol Test Conditions Reference Value Unit Output Intercept Point OIP 3 f = 1.0 GHz +17.8 dBm f = 2.2 GHz +14.8 Data Sheet PU10491EJ01V0DS 5 µPC3223TB

50 Ω 2, 3, 5 100 pF C 2 50 Ω OUT L 1 000 pF C 4 100 nH The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C 1, C2 Chip Capacitor 100 pF C 3 Chip Capacitor 1 000 pF C 4 Feed-through Capacitor 1 000 pF L Chip Inductor 100 nH INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE V CC , INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet PU10491EJ01V0DS 6 µPC3223TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN OUT C1 C2 L Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern : Through holes COMPONENT LIST Value C 1, C2 100 pF C 3, C4 1 000 pF L 100 nH Data Sheet PU10491EJ01V0DS 7 µPC3223TB

TYPICAL CHARACTERISTICS (T A = +25°C , unless otherwise specified) 0123456 0.1 1.1 2.1 5.1 − 10 − 20 − 30 − 40 − 50 − 10 − 20 − 30 − 40 No input signal − 60 − 40 − 20 0 +20 +40 +60 +80 + 100 VCC = 5.0 V VCC = 4.5 to 5.5 V VCC = 4.5 V TA = − 40˚C TA = +25˚C TA = +85˚C VCC = 5.0 V TA = +25˚C VCC = 5.5 V − 10 − 20 − 30 − 40 TA = +25˚C VCC = 5.5 V 3.1 4.1 VCC = 5.0 to 5.5 V VCC = 5.0 V VCC = 4.5 V TA = +25˚C VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V TA = +25˚C CIRCUIT CURRENT vs. SUPPLY VOLTAGECircuit Current ICC (mA) Supply Voltage VCC (V) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Circuit Current ICC (mA) Operating Ambient Temperature TA (°C) No input signal POWER GAIN vs. FREQUENCY Frequency f (GHz) Power Gain GP (dB) ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Output Return Loss RLout (dB) Remark The graphs indicate nominal characteristics. Data Sheet PU10491EJ01V0DS 8 µPC3223TB

0.1 1.1 2.1 5.1 TA = +85˚C TA = +25˚C VCC = 5.0 V TA = − 40˚C − 10 − 20 − 30 − 40 VCC = 5.0 V 3.1 4.1 TA = +85˚C TA = +25˚C TA = − 40˚C − 10 − 20 − 30 − 40 − 50 TA = − 40 to +85˚C VCC = 5.0 V − 10 − 20 − 30 − 40 VCC = 5.0 V TA = − 40 to +85˚C POWER GAIN vs. FREQUENCY Frequency f (GHz) Power Gain GP (dB) INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY Frequency f (GHz) Output Return Loss RLout (dB) Remark The graphs indicate nominal characteristics. Data Sheet PU10491EJ01V0DS 9 µPC3223TB

− 5 − 10 − 15 − 20 40 − 35 − 30 − 25 − 20 − 15 − 10 − 55 1 00 f = 1.0 GHz TA = +25˚C VCC = 4.5 V − 5 − 10 − 15 − 25 35 − 30 − 25 − 20 − 15 − 10 − 55 1 00 f = 2.2 GHz VCC = 5.0 V VCC = 5.0 VVCC = 5.5 V − 5 − 10 − 15 − 20 40 − 35 − 30 − 25 − 20 − 15 − 10 − 55 1 00 f = 1.0 GHz VCC = 5.0 V TA = − 40 to +85˚C TA = − 40 to +85˚C − 5 − 10 − 15 − 20 40 − 35 − 30 − 25 − 20 − 15 − 10 − 55 1 00 f = 2.2 GHz TA = +25˚C VCC = 4.5 V VCC = 5.0 VVCC = 5.5 V − 10 − 20 − 30 − 40 − 50 − 60 − 70 VCC = 5.5 V IM3 5.0 V VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V f1 = 1 000 MHz f2 = 1 001 MHz Pout − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 55 1 00 4.5 V − 10 − 20 − 30 − 40 − 50 − 60 − 70 VCC = 5.5 V IM3 5.0 V f1 = 2 200 MHz f2 = 2 201 MHz Pout 4.5 V − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 55 1 00 VCC = 4.5 to 5.5 V − 40 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) OUTPUT POWER (2 tones), IM3 vs. INPUT POWER 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power (2 tones) Pout (dBm) Input Power Pin (dBm) OUTPUT POWER (2 tones), IM3 vs. INPUT POWER Remark The graphs indicate nominal characteristics. Data Sheet PU10491EJ01V0DS 10 µPC3223TB

S-PARAMETERS (T A = +25°C, VCC = Vout = 5.0 V) S11−FREQUENCY

1.0 GHz

2.2 GHz

S22−FREQUENCY Data Sheet PU10491EJ01V0DS 11 µPC3223TB

6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 2.0±0.2 1.3 0.650.65 1.25±0.1 2.1±0.1 0.1 MIN. Data Sheet PU10491EJ01V0DS 12 µPC3223TB

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be each attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10491EJ01V0DS 13 µPC3223TB

M8E 00. 4 - 0110 The information in this document is current as of May, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10491EJ01V0DS 14 µPC3223TB

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0401 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPC3223TB