UPC3221GV

UPC3221GV RENESAS | Alldatasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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DESCRIPTION

The µPC3221GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem systems. This IC consists of gain control amplifier and video amplifier. The package is 8-pin SSOP suitable for surface mount. This IC is manufactured using our 10 GHz fT NESAT II AL silicon bipolar process. This process uses silicon nitride passivation film. This material can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Low distortion : IM3 = 56 dBc TYP. @ single-ended output, Vout = 0.7 Vp-p/tone  Low noise figure : NF = 4.2 dB TYP.  Wide AGC dynamic range : GCR = 50 dB TYP. @ input prescribe  On-chip video amplifier : V out = 1.0 Vp-p TYP. @ single-ended output  Supply voltage : V CC = 5.0 V TYP.  Packaged in 8-pin SSOP suitable for surface mounting APPLICATION  Digital CATV/Cable modem receivers

ORDERING INFORMATION

Part Number Package Supplying Form µPC3221GV-E1 8-pin plastic SSOP (4.45 mm (175)) • Embossed tape 8 mm wide

• Pin 1 indicates pull-out direction of tape
• Qty 1 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC3221GV DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3221GV Document No. PU10171EJ03V0DS (3rd edition) Date Published July 2004 CP(K) Printed in Japan The mark  shows major revised points.  NEC Compound Semiconductor Devices, Ltd. 2002, 2004

INTERNAL BLOCK DIAGRAM AND PIN CONNECTIONS VCC INPUT1 INPUT2 VAGC GND1 OUTPUT1 OUTPUT2 GND2 AGC AMP. Video AMP. AGC Control (Top View) PRODUCT LINE-UP OF 5 V AGC AMPLIFIER Part Number ICC (mA) G MAX (dB) G MIN (dB) GCR (dB) NF (dB) IM3 (dBc) Note Package µPC3217GV 23 53 0 53 6.5 50 8-pin SSOP (4.45 mm (175)) µPC3218GV 23 63 10 53 3.5 50 µPC3219GV 36.5 42.5 0 42.5 9.0 58 µPC3221GV 33 60 10 50 4.2 56 Note f1 = 44 MHz, f2 = 45 MHz, Vout = 0.7 Vp-p/tone, single-ended output Data Sheet PU10171EJ03V0DS 2 µPC3221GV

No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Application Internal Equivalent Circuit 1 V CC 4.5 to 5.5 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize ground impedance.  2 INPUT1 − 1.29 Signal input pins to AGC amplifier. This pin should be coupled with capacitor for DC cut. 3 INPUT2 − 1.29 AGC Control 2 35 4 V AGC 0 to V CC − Gain control pin. This pin’s bias govern the AGC output level. Minimum Gain at VAGC : 0 to 0.5 V Maximum Gain at VAGC : 3 to 3.5 V Recommended to use AGC voltage with externally resister (example: 1 kΩ ). AGC Amp. 5 GND2 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible.  6 OUTPUT2 − 2.28 Signal output pins of video amplifier. This pin should be coupled with capacitor for DC cut. 7 OUTPUT1 − 2.28 8 GND1 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All ground pins must be connected together with wide ground pattern to decrease impedance difference.  Note Pin voltage is measured at VCC = 5.0 V. Data Sheet PU10171EJ03V0DS 3 µPC3221GV

Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC T A = +25°C 6.0 V Gain Control Voltage Range VAGC T A = +25°C 0 to V CC V Power Dissipation PD T A = +85°C Note 250 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Supply Voltage VCC 4.5 5.0 5.5 V Operating Ambient Temperature T A V CC = 4.5 to 5.5 V −40 +25 +85 °C Gain Control Voltage Range VAGC 0 − 3.5 V Operating Frequency Range fBW 10 45 100 MHz Data Sheet PU10171EJ03V0DS 4 µPC3221GV

ELECTRICAL CHARACTERISTICS

(TA = +25°C, VCC = 5 V, f = 45 MHz, ZS = 50 Ω , ZL = 250 Ω , single-ended output) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Circuit Current ICC No input signal Note 1 26 33 41 mA AGC Pin Current IAGC No input signal, VAGC = 3.5 V Note 1 − 16 50 µA AGC Voltage High Level VAGC (H) @ Maximum gain Note 1 3.0 − 3.5 V AGC Voltage Low Level VAGC (L) @ Minimum gain Note 1 0 − 0.5 V RF Characteristics Maximum Voltage Gain G MAX V AGC = 3.0 V, Pin = −60 dBm Note 1 57 60 63 dB Middle Voltage Gain 1 G MID 1 V AGC = 2.2 V, Pin = −60 dBm Note 1 47.5 50.5 53.5 dB Middle Voltage Gain 2 G MID 2 V AGC = 1.2 V, Pin = −30 dBm Note 1 18 21 24 dB Minimum Voltage Gain G MIN V AGC = 0.5 V, Pin = −30 dBm Note 1 6 10 14 dB Gain Control Range (input prescribe) GCRin V AGC = 0.5 to 3.0 V Note 1 43 50 − dB Gain Control Range (output prescribe) GCRout V out = 1.0 Vp-p Note 1 36 40 − dB Gain Slope G slope Gain (@ V AGC = 2.2 V) − Gain (@ VAGC = 1.2 V) Note 1 26.5 29.5 32.5 dB/V Maximum Output Voltage Voclip V AGC = 3.0 V (@ Maximum gain) Note 1 2.0 2.8 − Vp-p Noise Figure NF V AGC = 3.0 V (@ Maximum gain) Note 3 − 4.2 5.7 dB 3rd Order Intermodulation Distortion 1 IM31 f 1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω , Pin = −30 dBm/tone, Vout = 0.7 Vp-p/tone (@ single-ended output) Note 1 43 47 − dBc 3rd Order Intermodulation Distortion 2 IM32 f 1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω , VAGC = 3.0 V (@ Maximum gain), Vout = 0.7 Vp-p/tone (@ single-ended output) Note 1 50 56 − dBc Gain Difference of OUTPUT1 and OUTPUT2 ∆G V AGC = 3.0 V, Pin = −60 dBm, ∆G = G (@ Pout1) − G (@ Pout2) Note 1, 2 −0.5 0 +0.5 dB Notes 1. By measurement circuit 1 2. By measurement circuit 2 3. By measurement circuit 3 Data Sheet PU10171EJ03V0DS 5 µPC3221GV

STANDARD CHARACTERISTICS (T A = +25°C, VCC = 5 V, ZS = 50 Ω ) Parameter Symbol Test Conditions Reference Value Unit Noise Figure 2 NF2 Gain reduction = −10 dBm Note 2 6.0 dB Noise Figure 3 NF3 Gain reduction = −20 dBm Note 2 9.5 dB Output Voltage Vout P in = −56 to −16 dBm Note 1 1.0 V p-p Input Impedance Zin V AGC = 0.5 V, f = 45 MHz Note 3 0.9 k − j1.4 k Ω Output Impedance Zout V AGC = 0.5 V, f = 45 MHz Note 3 9.0 + j1.9 Ω Input 3rd Order Distortion Intercept Point IIP3 V AGC = 0.5 V (@ Minimum gain), f1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω (@ single-ended output) Note 1 +2.5 dBm Notes 1. By measurement circuit 1 2. By measurement circuit 3 3. By measurement circuit 4 Data Sheet PU10171EJ03V0DS 6 µPC3221GV

50 Ω 50 Ω 200 Ω 1 kΩ VAGC VCC 1 Fµ 1 Fµ 200 Ω1 Fµ 1 Fµ 1 Fµ 1 Fµ AGC AMP. Video AMP. 50 Ω Signal Generator AGC Control Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type) MEASUREMENT CIRCUIT 2 Note 200 Ω 1 kΩ VAGC VCC 1 Fµ 1 Fµ 200 Ω1 Fµ 1 Fµ 1 Fµ 1 Fµ AGC AMP. Video AMP. 50 Ω Signal Generator 50 Ω Spectrum Analyzer 50 Ω AGC Control Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type) Data Sheet PU10171EJ03V0DS 7 µPC3221GV

50 Ω 50 Ω 200 Ω 1 kΩ VAGC VCC 1 Fµ 1 Fµ 200 Ω1 Fµ 1 Fµ 1 Fµ 1 Fµ AGC AMP. Video AMP. AGC Control Noise Source Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type) MEASUREMENT CIRCUIT 4 Network Analyzer 50 Ω50 Ω 50 Ω50 Ω 1 kΩ VAGC VCC 1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ AGC AMP. Video AMP. AGC Control The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10171EJ03V0DS 8 µPC3221GV

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD (MEASUREMENT CIRCUIT 1) 200 Ω 200 Ω 1kΩ 1 F VCC µ 1 Fµ PC3221GVµ VAGC 1 Fµ 1 Fµ Note 1 Fµ 1 Fµ Note Balun Transformer Remarks 1. Back side: GND pattern 2. Solder plated on pattern 3. : Through hole Data Sheet PU10171EJ03V0DS 9 µPC3221GV

TYPICAL CHARACTERISTICS (T A = +25°C , unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGECircuit Current ICC (mA) Supply Voltage V CC (V) 0123456 No input signal TA = –40˚C TA = +25˚C TA = +85˚C AGC PIN CURRENT vs. GAIN CONTROL VOLTAGE RANGE AGC Pin Current IAGC ( A) 100 Gain Control Voltage Range V AGC (V) No input signal TA = –40˚C 3.0 2.5 µ TA = +85˚C TA = +25˚C VOLTAGE GAIN vs. GAIN CONTROL VOLTAGE RANGE Voltage Gain (dB) Gain Control Voltage Range V AGC (V) VCC = 5.0 V f = 45 MHz TA = +85˚C TA = +25˚C TA = –40˚C VOLTAGE GAIN vs. GAIN CONTROL VOLTAGE RANGE Voltage Gain (dB) Gain Control Voltage Range V AGC (V) f = 45 MHz 3.0 2.5 VCC = 5.5 V VCC = 4.5 V VCC = 5.0 V AGC PIN CURRENT vs. GAIN CONTROL VOLTAGE RANGE AGC Pin Current IAGC ( A) 100 Gain Control Voltage Range V AGC (V) No input signal VCC = 4.5 V 3.0 2.5 µ VCC = 5.5 V VCC = 5.0 V –10 –20 –30 –40 –50 –60 VOLTAGE GAIN vs. FREQUENCY Voltage Gain (dB) 10 100 1 000 Frequency f (MHz) VCC = 5.5 V 5.0 V 4.5 V VAGC = 3.0 V (Pin = –60 dBm) VAGC = 1.6 V (Pin = –60 dBm) VAGC = 0.5 V (Pin = –30 dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10171EJ03V0DS 10 µPC3221GV

OUTPUT POWER vs. INPUT POWER Output Power Pout (50 Ω/250 Ω) (dB) –10 –15 –20 –25 –30 Input Power P in (dBm) f = 45 MHz VAGC = 3.0 V VCC = 5.5 V 5.0 V 4.5 V OUTPUT POWER vs. INPUT POWER Output Power Pout (50 Ω/250 Ω) (dB) –10 –15 –20 –25 –30 Input Power P in (dBm) f = 45 MHz VAGC = 1.6 V VCC = 5.5 V 5.0 V 4.5 V OUTPUT POWER vs. INPUT POWER Output Power Pout (50 Ω/250 Ω) (dB) –10 –15 –20 –25 –30 Input Power P in (dBm) f = 45 MHz VAGC = 0.5 V 4.5 V VCC = 5.5 V 5.0 V OUTPUT POWER vs. INPUT POWER Output Power Pout (50 Ω/250 Ω) (dB) –10 –15 –20 –25 –30 Input Power P in (dBm) VCC = 5.0 V f = 45 MHz VAGC = 1.6 V OUTPUT POWER vs. INPUT POWER Output Power Pout (50 Ω/250 Ω) (dB) –10 –15 –20 –25 –30 Input Power P in (dBm) VCC = 5.0 V f = 45 MHz VAGC = 3.0 V TA = +85˚C +25˚C –40˚C +25˚C –40˚C TA = +85˚C OUTPUT POWER vs. INPUT POWER Output Power Pout (50 Ω/250 Ω) (dB) –10 –15 –20 –25 –30 Input Power P in (dBm) VCC = 5.0 V f = 45 MHz VAGC = 0.5 V –40˚C TA = +85˚C +25˚C Remark The graphs indicate nominal characteristics. Data Sheet PU10171EJ03V0DS 11 µPC3221GV

NOISE FIGURE vs. GAIN CONTROL VOLTAGE RANGE Noise Figure NF (dB) Gain Control Voltage Range V AGC (V) VCC = 5.0 V f = 45 MHz NOISE FIGURE vs. GAIN CONTROL VOLTAGE RANGE Noise Figure NF (dB) Gain Control Voltage Range V AGC (V) f = 45 MHz VCC = 4.5 V 5.0 V 5.5 V NOISE FIGURE vs. GAIN REDUCTION Noise Figure NF (dB) Gain Reduction (dB) –40 –30 –20 0–10 VCC = 5.0 V 5.5 V VCC = 4.5 V NOISE FIGURE vs. GAIN REDUCTION Noise Figure NF (dB) Gain Reduction (dB) VCC = 5.0 V f = 45 MHz –40 –30 –20 0–10 TA = –40˚C +25˚C +85˚C TA = –40˚C +25˚C +85˚C –10 –20 –30 –40 –50 –60 –70 –80 Output Power Pout (50 Ω/250 Ω) (dB) Input Power Pin (dBm) OUTPUT POWER, IM 3 vs. INPUT POWER VAGC = 3.0 V freq1 = 44 MHz freq2 = 45 MHz IM3 Pout 3rd Order Intermodulation Distortion IM3 (dBc) –80 VCC = 4.5 V 5.0 V 5.5 V VCC = 5.5 V 5.0 V 4.5 V –10 –20 –30 –40 –50 –60 –70 –80 Input Power P in (dBm) OUTPUT POWER, IM 3 vs. INPUT POWER VAGC = 1.6 V freq1 = 44 MHz freq2 = 45 MHz IM3 Pout –50 VCC = 4.5 V 5.0 V 5.5 V VCC = 4.5 V 5.0 V 5.5 V f = 45 MHz Output Power Pout (50 Ω/250 Ω) (dB) 3rd Order Intermodulation Distortion IM3 (dBc) Remark The graphs indicate nominal characteristics. Data Sheet PU10171EJ03V0DS 12 µPC3221GV

in (dBm) IM3 vs. INPUT POWER Vout = 0.7 Vp-p/tone freq1 = 44 MHz freq2 = 45 MHz 3rd Order Intermodulation Distortion IM3 (dBc) –60 VCC = 5.5 V 5.0 V 4.5 V –10 –20 –30 –40 –50 –60 –70 –80 –90 –30 –20 –10 0 10 20 Input Power P in (dBm) OUTPUT POWER, IM 3 vs. INPUT POWER VAGC = 0.5 V freq1 = 44 MHz freq2 = 45 MHz IM3 Pout –40 VCC = 4.5 V 5.0 V VCC = 5.5 V 5.0 V 4.5 V 5.5 V –10 –20 –30 –40 –50 –60 –70 –80 Input Power P in (dBm) OUTPUT POWER, IM 3 vs. INPUT POWER VCC = 5.0 V VAGC = 3.0 V freq1 = 44 MHz freq2 = 45 MHz IM3 Pout –80 TA = –40˚C TA = +85˚C +25˚C –40˚C +85˚C +25˚C –10 –20 –30 –40 –50 –60 –70 –80 Input Power P in (dBm) OUTPUT POWER, IM 3 vs. INPUT POWER VCC = 5.0 V VAGC = 1.6 V freq1 = 44 MHz freq2 = 45 MHz IM3 Pout –50 TA = +85˚C +25˚C +85˚C +25˚C –40˚C –40˚C –10 –20 –30 –40 –50 –60 –70 –80 –90 –30 –20 –10 0 10 20 Input Power P in (dBm) OUTPUT POWER, IM 3 vs. INPUT POWER VCC = 5.0 V VAGC = 0.5 V freq1 = 44 MHz freq2 = 45 MHz IM3 Pout –40 TA = +85˚C +25˚C +85˚C +25˚C –40˚C –40˚C Input Power P in (dBm) IM3 vs. INPUT POWER VCC = 5.0 V Vout = 0.7 Vp-p/tone freq1 = 44 MHz freq2 = 45 MHz 3rd Order Intermodulation Distortion IM3 (dBc) –60 +25˚C –40˚C TA = +85˚C Output Power Pout (50 Ω/250 Ω) (dB) 3rd Order Intermodulation Distortion IM3 (dBc) Output Power Pout (50 Ω/250 Ω) (dB) 3rd Order Intermodulation Distortion IM3 (dBc) Output Power Pout (50 Ω/250 Ω) (dB) 3rd Order Intermodulation Distortion IM3 (dBc) Output Power Pout (50 Ω/250 Ω) (dB) 3rd Order Intermodulation Distortion IM3 (dBc) Remark The graphs indicate nominal characteristics. Data Sheet PU10171EJ03V0DS 13 µPC3221GV

S-PARAMETERS (T A = +25°C, VCC = VAGC = 5.0 V) S11−FREQUENCY 12 3 1 : 10 MHz 2.889 kΩ –1.059 kΩ 15.33 pF 2 : 45 MHz 864.1 Ω –1.402 kΩ 2.524 pF 3 : 100 MHz 235.0 Ω –806.9 Ω 1.973 pF S22−FREQUENCY 1 : 10 MHz 9.032 Ω 466.5 mΩ 7.335 nH 2 : 45 MHz 8.998 Ω 1.887 Ω 6.675 nH 3 : 100 MHz 7.266 Ω 6.750 Ω 10.74 nH Data Sheet PU10171EJ03V0DS 14 µPC3221GV

8-PIN PLASTIC SSOP (4.45 mm (175)) (UNIT: mm) 1.5±0.1 0.575 MAX. 0.10 M 1.8 MAX. 0.1±0.1 0.3+0.10 –0.05 detail of lead end 3˚+7˚ –3˚ 0.65 8 5 1 4 2.9±0.1 4.94±0.2 0.5±0.2 0.87±0.23.2±0.1 0.15+0.10 –0.05 0.15 Data Sheet PU10171EJ03V0DS 15 µPC3221GV

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Note Peak temperature (package surface temperature) : 215°C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Note Excluding lead-free products Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10171EJ03V0DS 16 µPC3221GV

M8E 00. 4 - 0110 The information in this document is current as of July, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10171EJ03V0DS 17 µPC3221GV

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPC3221GV