UPC3219GV-E1

UPC3219GV RENESAS | Alldatasheet

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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3219GV Document No. PU10511EJ01V0DS (1st edition) (Previous No. P15434EJ1V0DS00) Date Published August 2004 CP(K) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2001, 2004 The mark  shows major revised points.

DESCRIPTION

The µPC3219GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem systems. This IC consists of gain control amplifier and video amplifier. The package is 8-pin SSOP suitable for surface mount. This IC is manufactured using our 10 GHz f T NESAT II AL silicon bipolar process. This process uses silicon nitride passivation film. This material can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Low distortion : IM3 = 58 dBc TYP. @ single-ended output, Vout = 0.7 Vp-p/tone  Wide AGC dynamic range : GCR = 42.5 dB TYP.  On-chip video amplifier : V out = 1.0 Vp-p TYP. @ single-ended output  Supply voltage : V CC = 5.0 V TYP.  Packaged in 8-pin SSOP suitable for surface mounting APPLICATION  Digital CATV/Cable modem receivers

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC3219GV-E1 8-pin plastic SSOP (4.45 mm (175)) 3219 • Embossed tape 8 mm wide

• Pin 1 indicates pull-out direction of tape
• Qty 1 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC3219GV

Data Sheet PU10511EJ01V0DS 2 µPC3219GV INTERNAL BLOCK DIAGRAM AND PIN CONNECTIONS 4 AGC Cont. (Top View) GND1 OUTPUT1 OUTPUT2 GND2 VCC INPUT1 INPUT2 VAGC PRODUCT LINE-UP OF 5 V AGC AMPLIFIER Part Number ICC (mA) GMAX (dB) GMIN (dB) GCR (dB) NF (dB) IM3 (dBc) Note Package µPC3217GV 23 53 0 53 6.5 50 8-pin SSOP (4.45 mm (175)) µPC3218GV 23 63 10 53 3.5 50 µPC3219GV 36.5 42.5 0 42.5 9.0 58 Note f 1 = 44 MHz, f2 = 45 MHz, Vout = 0.7 Vp-p/tone, single-ended output

Data Sheet PU10511EJ01V0DS 3 µPC3219GV PIN EXPLANATIONS Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Application Internal Equivalent Circuit 1 V CC 4.5 to 5.5 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize ground impedance.  2 INPUT1 − 1.45 Signal input pins to AGC amplifier. This pin should be coupled with capacitor for DC cut. 3 INPUT2 − 1.45 AGC Control 4 V AGC 0 to V CC − Gain control pin. This pin’s bias govern the AGC output level. Minimum Gain at VAGC < 0.5 V Maximum Gain at VAGC > 4.5 V Recommended to use AGC voltage with externally resister (example:100 kΩ). AGC Amp. 5 GND2 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible.  6 OUTPUT2 − 2.2 Signal output pins of video amplifier. This pin should be coupled with capacitor for DC cut. 7 OUTPUT1 − 2.2 8 GND1 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All ground pins must be connected together with wide ground pattern to decrease impedance difference.  Note Pin voltage is measured at V CC = 5.0 V.

Data Sheet PU10511EJ01V0DS 4 µPC3219GV ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC T A = +25°C 6.0 V Power Dissipation PD T A = +85°C Note 250 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Supply Voltage VCC 4.5 5.0 5.5 V Operating Ambient Temperature T A V CC = 4.5 to 5.5 V −40 +25 +85 °C Gain Control Voltage Range VAGC 0 − VCC V Operating Frequency Range fBW 10 45 100 MHz

Data Sheet PU10511EJ01V0DS 5 µPC3219GV

ELECTRICAL CHARACTERISTICS

(TA = +25°C, VCC = 5 V, f = 45 MHz, ZS = 50 Ω, ZL = 250 Ω, single-ended output) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Circuit Current ICC No input signal Note 1 27.5 36.5 43.5 mA AGC Voltage High Level VAGC (H) @ Maximum gain Note 1 4.5 − VCC V AGC Voltage Low Level VAGC (L) @ Minimum gain Note 1 0 − 0.5 V RF Characteristics Maximum Voltage Gain GMAX V AGC = 4.5 V, Pin = −40 dBm Note 1 39 42.5 45 dB Minimum Voltage Gain GMIN V AGC = 0.5 V, Pin = −20 dBm Note 1 −4 0 4 dB Gain Control Range GCR V AGC = 0.5 to 4.5 V Note 1 35 42.5 − dB Output Voltage Vout P in = −38 to −13 dBm Note 1 − 1.0 − Vp-p Maximum Output Voltage Voclip V AGC = 4.5 V @ Maximum gain Note 1 2.5 3.4 − Vp-p Noise Figure NF V AGC = 4.5 V @ Maximum gain Note 2 − 9.0 10.5 dB Notes 1. By measurement circuit 1 2. By measurement circuit 2

Data Sheet PU10511EJ01V0DS 6 µPC3219GV STANDARD CHARACTERISTICS (TA = +25°C, VCC = 5 V, ZS = 50 Ω) Parameter Symbol Test Conditions Reference Value Unit Input Impedance Zin V AGC = 0.5 V, f = 45 MHz Note 1 1.2 k − j1.5 k Ω Output Impedance Zout V AGC = 0.5 V, f = 45 MHz Note 1 6.0 + j3.2 Ω 3rd Order Input Intercept Point IIP 3 V AGC = 0.5 V @Minimum gain, f1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω @single-ended output Note 2 −1 dBm 3rd Order Intermodulation Distortion 1 IM31 f 1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω, Pin = −37 to −20 dBm/tone, Vout = 1.0 VP-P/tone @single-ended output Note 2 52 dBc 3rd Order Intermodulation Distortion 2 IM 32 f 1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω, Pin = −40 to −23 dBm/tone, Vout = 0.7 VP-P/tone @single-ended output Note 2 58 dBc 3rd Order Intermodulation Distortion 3 IM 33 f 1 = 44 MHz, f2 = 45 MHz, ZL = 500 Ω, Pin = −37 to −20 dBm/tone, Vout = 2.0 VP-P/tone @differential output Note 3 52 dBc 3rd Order Intermodulation Distortion 4 IM 34 f 1 = 44 MHz, f2 = 45 MHz, ZL = 500 Ω, Pin = −40 to −23 dBm/tone, Vout = 1.4 VP-P/tone @differential output Note 3 58 dBc 2nd Order Intermodulation Distortion 1 IM 21 f 1 = 44 MHz, f2 = 45 MHz, ZL = 500 Ω, Pin = −37 to −22 dBm/tone, Vout = 2.0 VP-P/tone @differential output Note 3 45 dBc 2nd Order Intermodulation Distortion 2 IM 22 f 1 = 44 MHz, f2 = 45 MHz, ZL = 500 Ω, Pin = −40 to −23 dBm/tone, Vout = 1.4 VP-P/tone @differential output Note 3 47 dBc Notes 1. By measurement circuit 3 2. By measurement circuit 1 3. By measurement circuit 4

Data Sheet PU10511EJ01V0DS 7 µPC3219GV TYPICAL CHARACTERISTICS (TA = +25°C , unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 0 0123456 Supply Voltage V CC (V) Circuit Current ICC (mA) VOLTAGE GAIN vs. FREQUENCY −10 −20 −30 1 100 1 000 Frequency f (MHz) Voltage Gain GV (dB) VOLTAGE GAIN vs. AGC VOLTAGE −10 012345 AGC Voltage V AGC (V) Voltage Gain GV (dB) OUTPUT POWER vs. INPUT POWER −10 −20 −30 −40 −50 −60 −70 Input Power P in (dBm) Output Power Pout (50 Ω/250 Ω) (dBm)Note No input signal TA = −40°C TA = +25°C TA = +85°C VCC = 4.5 V VCC = 5 V VCC = 5.5 V Pin = −40 dBm ZL = 250 Ω measurement circuit 5 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V f = 45 MHz P in = −40 dBm ZL = 250 Ω measurement circuit 1 f = 45 MHz Z L = 250 Ω measurement circuit 1 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V VCC = 5 V f = 45 MHz Z L = 250 Ω measurement circuit 1 T A = −40°C TA = +25°C TA = +85°C VOLTAGE GAIN vs. AGC VOLTAGE −10 012345 AGC Voltage V AGC (V) Voltage Gain GV (dB) TA = −40°C TA = +25°C TA = +85°C VCC = 5 V f = 45 MHz Pin = −40 dBm ZL = 250 Ω measurement circuit 1 OUTPUT POWER vs. INPUT POWER −10 −20 −30 −40 −50 −60 −70 Input Power P in (dBm) Output Power Pout (50 Ω/250 Ω) (dBm)Note VAGC = 4.5 V VAGC = 2.5 V VAGC = 0.5 V VAGC = 2.5 V VAGC = 0.5 V VAGC = 4.5 V VAGC = 2.5 V VAGC = 0.5 V VAGC = 4.5 V Note Measurement value with spectrum analyzer. Remark The graphs indicate nominal characteristics.

Data Sheet PU10511EJ01V0DS 8 µPC3219GV NOISE FIGURE vs. AGC VOLTAGE 0 2 2.5 3 3.5 4 4.5 5 AGC Voltage V AGC (V) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY 0 20 40 60 80 100 Frequency f (MHz) Noise Figure NF (dB) 3RD ORDER INTERMODULATION DISTORTION −20 −40 −60 −80 −40 −30 −20 −10 0 10 Input Power P in/tone (dBm) 3RD ORDER INTERMODULATION DISTORTION −20 −40 −60 −80 Input Power P in/tone (dBm) Output Power Pout/tone (50 Ω/250 Ω) (dBm)Note Output Power Pout/tone (50 Ω/250 Ω) (dBm)Note 3RD ORDER INTERMODULATION DISTORTION −20 −40 −60 −80 Input Power P in/tone (dBm) Output Power Pout/tone (50 Ω/250 Ω) (dBm)Note VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V f = 45 MHz ZL = 250 Ω measurement circuit 2 f 1 = 44 MHz f2 = 45 MHz ZL = 250 Ω VAGC = 0.5 V measurement circuit 1 f1 = 44 MHz f2 = 45 MHz ZL = 250 Ω VAGC = 4.5 V measurement circuit 1 f1 = 44 MHz f2 = 45 MHz ZL = 250 Ω VAGC = 2.5 V measurement circuit 1 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V ZL = 250 Ω VAGC = 4.5 V measurement circuit 2 Note Measurement value with spectrum analyzer. Remark The graphs indicate nominal characteristics.

Data Sheet PU10511EJ01V0DS 9 µPC3219GV IM3, OUTPUT POWER, AGC VOLTAGE vs. INPUT POWER −10 −20 −30 −40 −50 −60 −70 Input Power P in/tone (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output Power Pout/tone (50 Ω/250 Ω) (dBm)Note AGC Voltage VAGC (V) Conditions f1 = 44 MHz f2 = 45 MHz ZL = 250 Ω Vout = 0.7 VP-P/tone Constant measurement circuit 1 IM2/IM3, DIFFERENTIAL OUTPUT POWER, AGC VOLTAGE vs. INPUT POWER −10 −20 −30 −40 −50 −60 −70 Input Power P in/tone (dBm) 2nd/3rd Order Intermodulation Distortion IM2/IM3 (dBc) Differential Output Power Pout (dBm)Note AGC Voltage VAGC (V) Conditions f1 = 44 MHz f2 = 45 MHz ZL = 250 Ω Vout = 1.4 VP-P/tone Constant measurement circuit 4 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V Pout VAGC IM3 Pout VAGC IM3 IM2 (89 MHz) IM2 (1 MHz) Note Measurement value with spectrum analyzer. Remark The graphs indicate nominal characteristics.

Data Sheet PU10511EJ01V0DS 10 µPC3219GV IM3, OUTPUT POWER, AGC VOLTAGE vs. INPUT POWER −10 −20 −30 −40 −50 −60 −70 Input Power P in/tone (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output Power Pout/tone (50 Ω/250 Ω) (dBm)Note AGC Voltage VAGC (V) Conditions f1 = 44 MHz f2 = 45 MHz ZL = 250 Ω Vout = 1.0 VP-P/tone Constant measurement circuit 1 IM2/IM3, DIFFERENTIAL OUTPUT POWER, AGC VOLTAGE vs. INPUT POWER −10 −20 −30 −40 −50 −60 −70 Input Power P in/tone (dBm) 2nd/3rd Order Intermodulation Distortion IM2/IM3 (dBc) Differential Output Power Pout (dBm)Note AGC Voltage VAGC (V) Conditions f1 = 44 MHz f2 = 45 MHz ZL = 250 Ω Vout = 2.0 VP-P/tone Constant measurement circuit 4 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V Pout VAGC IM3 Pout VAGC IM3 IM2 (89 MHz) IM2 (1 MHz) Note Measurement value with spectrum analyzer. Remark The graphs indicate nominal characteristics.

Data Sheet PU10511EJ01V0DS 11 µPC3219GV S-PARAMETERS (TA = +25°C, VCC = 5.0 V) S11−FREQUENCY Marker 1 45 MHz 1.229 k − j 1.522 kΩ START 0.100 000 MHz STOP 1000.000 000 MHz S 22−FREQUENCY Marker 1 45 MHz 6.035 + j 3.157 Ω START 0.100 000 MHz STOP 1000.000 000 MHz

Data Sheet PU10511EJ01V0DS 12 µPC3219GV MEASUREMENT CIRCUIT 1 1Signal Generator Note VAGC 10 kΩ 200 Ω 200 Ω Spectrum Analyzer 50 Ω 50 Ω 1 F 13 kΩ 50 Ω 5AGC Cont. V CC µ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type) MEASUREMENT CIRCUIT 2 1Note VAGC 10 kΩ 200 Ω 200 Ω 50 Ω 50 Ω Noise Figure Meter Noise Source 1 F 13 kΩ 5AGC Cont. V CC µ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type)

Data Sheet PU10511EJ01V0DS 13 µPC3219GV MEASUREMENT CIRCUIT 3 VAGC 10 kΩ50 Ω 50 Ω 50 Ω50 Ω Network Analyzer 1 F 13 kΩ 5AGC Cont. V CC µ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ MEASUREMENT CIRCUIT 4 1Signal Generator Note VAGC 10 kΩ 500 Ω Differential Probe Spectrum Analyzer (50 Ω) 1 F 13 kΩ 50 Ω 5AGC Cont. V CC µ 1 Fµ 1 Fµ 1 Fµ 1 Fµ 1 Fµ RL Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type)

Data Sheet PU10511EJ01V0DS 14 µPC3219GV MEASUREMENT CIRCUIT 5 1Note VAGC 10 kΩ 200 Ω 200 Ω 50 Ω 1 F 13 kΩ 5AGC Cont. V CC µ 1 Fµ

1 F µ

1 Fµ 1 Fµ 1 Fµ 50 Ω50 Ω Network Analyzer Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type) APPLICATION CIRCUIT EXAMPLE 1Signal Generator SAW Filter R L = 1 000 Ω VAGC 10 kΩ 1 F 13 kΩ 50 Ω 5AGC Cont. V CC µ 1 Fµ 1 Fµ 1 Fµ 1 Fµ

1 Fµ 500 Ω

Analyzer (50 Ω) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Data Sheet PU10511EJ01V0DS 15 µPC3219GV ILLUSTRATION OF THE EVALUATION BOARD FOR MEASUREMENT CIRCUIT 1 200 20010k 13k 1µ1 VCC µ 1Note µ VAGC PC3219GVµ Note Balun Transformer Remarks 1. Back side: GND pattern 2. Solder plated on pattern : Through holes 4. represents cutout 5. represents short-circuit strip

Data Sheet PU10511EJ01V0DS 16 µPC3219GV PACKAGE DIMENSIONS 8-PIN PLASTIC SSOP (4.45 mm (175)) (UNIT: mm) 1.5±0.1 0.575 MAX. 0.10 M 1.8 MAX. 0.1±0.1 0.3+0.10 –0.05 detail of lead end 3˚+7˚ –3˚ 0.65 8 5 1 4 2.9±0.1 4.94±0.2 0.5±0.2 0.87±0.23.2±0.1 0.15+0.10 –0.05 0.15

Data Sheet PU10511EJ01V0DS 17 µPC3219GV NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to mi nimize ground impedance (to pr event undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to V CC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Note Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Note Excluding lead-free products Caution Do not use different soldering met hods together (except for partial heating).

Data Sheet PU10511EJ01V0DS 18 µPC3219GV M8E 00. 4 - 0110 The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product be fore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPC3219GV