UPC2721 NEC | Alldatasheet
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Caution electro-static sensitive device The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC2721, µµµµPC2722 GENERAL PURPOSE L-BAND DOWN CONVERTER ICs Document No. P11102EJ4V0DS00 (4th edition) Date Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1996, 1999
DESCRIPTION
The µPC2721/2722 are Silicon monolithic ICs designed for L-band down converter. These ICs consist of double balanced mixer, local oscillator, local oscillation buffer amplifier, IF amplifier, and voltage regulator. The packages are 8 pin SOP or SSOP suitable for high-density surface mount.
FEATURES
- Wide band operation fRF = 0.9 to 2.0 GHz
- Two products in IF output variation are prepared µPC2721: Emitter follower output type = 50 Ω constant resistive impedance µPC2722: Open collector output type = High impedance output dependent on external inductance.
- Single-end push-pull IF amplifier suppresses fluctuation in output impedance.
- Supply voltage: 5 V
- Low current consumption ( µPC2721: ICC = 38 mA typ., µPC2722: ICC = 28 mA typ.)
- Packaged in 8 pin SOP or SSOP suitable for high-density mounting
ORDERING INFORMATION
PART NUMBER PACKAGE PACKAGE STYLE µPC2721GR-E1 µPC2722GR-E1 8 pin Plastic SOP (225 mil) Embossed tape 12 mm wide 2.5 k/REEL. Pin 1 indicates pull-out direction of tape. µPC2721GR-E2 µPC2722GR-E2 8 pin Plastic SOP (225 mil) Embossed tape 12 mm wide 2.5 k/REEL. Pin 1 indicates roll-in direction of tape. µPC2721GV-E1 µPC2722GV-E1 8 pin Plastic SSOP (175 mil) Embossed tape 8 mm wide 1 k/REEL. Pin 1 indicates pull-out direction of tape. For evaluation sample order, please contact your local NEC office. (Part number for sample order: µPC2721GR, µPC2722GR, µPC2721GV, µPC2722GV)
Data Sheet P11102EJ4V0DS002 µµµµPC2721, µµµµPC2722 INTERNAL BLOCK DIAGRAM PIN CONFIGURATION (Top View) 8765 1234 OSC OSC Buffer 1. OSC base (bypass) 2. OSC base (feedback) 3. OSC collector (coupling) 4. V CC 5. IF output 6. GND 7. RF input 2 (bypass) 8. RF input 1
Data Sheet P11102EJ4V0DS00 3 µµµµPC2721, µµµµPC2722 PIN No. SYMBOL PIN VOLT TYP.(V) Function and Explanation Equivalent circuit
1 OSC base
(bypass)
2.9 Internal oscillator consists in balance
amplifier. 2 pin and 3 pin should be externally equipped with tank resonator circuit in order to oscillate with feedback loop.
2 OSC base
(feedback) 2.9 3O S C collector (coupling) 5.0 4V CC 5.0 Supply voltage pin for the IC.
5 IF output µPC2721
2.9 In µPC2721, IF amplifier is designed as single-end push-pull amplifier. This pin is assigned for the emitter follower output with 50 Ω constant resistive impedance in wide band. µPC2721 µPC2722 5.0 In µPC2722, IF amplifier is designed as balance amplifier. This pin is assigned for the open collector output with high impedance dependent on external inductance. µPC2722 6 GND 0.0 GND pin for the IC.
7 RF input 2
(bypass) 2.4 7 pin and 8 pin are inputs for mixer designed as double balanced type. Either pin can be assigned for input and another for ground. 8 RF input 1 2.4 1 pin should be grounded through coupling capacitor to 0.5 pF. 3 pin is defined as open collector. This pin should be coupled through resistor or chock coil in order to adjust Q and be supplied voltage. In case of abnormal oscillation, adjust its Q lower to stabilize the operation. 3 1 VCC
Data Sheet P11102EJ4V0DS004 µµµµPC2721, µµµµPC2722 SYMBOL UNIT SYMBOL UNIT TEST CONDITIONSPARAMETER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT TEST CONDITION Supply Voltage V CC 6.0 V T A = 25 °C Power Dissipation P D 250 mW TA = 85 °C Note 1 Operating temperature range T A −40 to +85 °C Storage temperature range T stg −65 to +150 °C Note 1: Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass board. RECOMMENDED OPERATING RANGE PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage V CC 4.5 5.0 5.5 V Operating temperature range T A −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (V CC = 5.0 V, TA = +25 °C Note 2 µPC2721 µPC2722 MIN. TYP. MAX MIN. TYP. MAX Circuit Current I CC 29 38 45.5 19 28 37 mA no input signal Lower Input Frequency f RF 10 . 9 0 . 9 G H z f IF = 50 to 600 MHz (C2721) Upper Input Frequency f RF 22 . 0 2 . 0 G H z fIF = DC to 600 MHz (C2722) Conversion Gain 1 CG1 18 21 24 15 18 21 dB f RF = 900 MHz, fIF = 402.8 MHz Conversion Gain 2 CG2 18 21 24 15 18 21 dB f RF = 2.0 GHz, fIF = 402. 8 MHz Noise Figure 1 NF1 − 91 3 − 91 3 d B f RF = 900 MHz, fIF = 402.8 MHz Noise Figure 2 NF2 − 11 15 − 91 3 d B f RF = 2.0 GHz, fIF = 402.8 MHz Maximum output power 1 PO(SAT)1+ 2+ 7 − +2 +6 − dBm f RF = 900 MHz, fIF = 402.8 MHz Maximum output power 2 PO(SAT)2+ 2+ 7 − +2 +6 − dBm f RF = 2.0 GHz, fIF = 402.8 MHz Note 2: on test circuit STANDARD CHARACTERISTICS (FOR REFERENCE) (V CC = 5 V, TA = 25 °C Note 2 REFERENCE VALUES µPC2721 µPV2722 Conversion Gain 3 CG3 22 19 dB f RF = 900 MHz, fIF = 50 MHz Conversion Gain 4 CG4 22 19 dB f RF = 2.0 MHz, fIF = 50 MHz Conversion Gain 5 CG5 21 18 dB f RF = 900 MHz, fIF = 479.5 MHz Conversion Gain 6 CG6 21 18 dB f RF = 2.0 MHz, fIF = 479.5 MHz Conversion Gain 7 CG7 19.5 17 dB f RF = 900 MHz, fIF = 600 MHz Conversion Gain 8 CG8 19.5 17 dB f RF = 2.0 MHz, fIF = 600 MHz Third Intermodulation Distortion 1 IM31 38.0 42.0 dBc f RF = 900, 938 MHz, Pin = −30 dBm Third Intermodulation Distortion 2 IM32 38.0 42.0 dBc f RF = 2.0, 2.038 GHz, Pin = −30 dBm PARAMETER TEST CONDITIONSPARAMETER
Data Sheet P11102EJ4V0DS00 5 µµµµPC2721, µµµµPC2722 TYPICAL CHARACTERISTICS (T A = +25 °°°°C) 0 123456 ICC – Circuit Current – mA VCC – Supply Voltage – V No input signal PC2721 PC2722 CIRCUIT CURRENT vs. SUPPLY VOLTAGE +10 –10 –15 –20 –30–40 –20 –10 0 µ µ +10 +20 Pout – Output Power – dBm Pin – Input Power – dBm PC2721 PC2722 OUTPUT POWER vs. INPUT POWER fRF = 2.0 GHz fRF = 900 MHz fRF = 2.0 GHz fRF = 900 MHz VCC = 5 V fIF = 402 MHz On test circuit CG – Conversion Gain – dB NF – Noise Figure – dB fin – Input Frequency – GHz PC2721 PC2722 CONVERSION GAIN AND NOISE FIGURE vs. INPUT FREQUENCY 0 100 200 300 400 500 600 CG – Conversion Gain – dB fIF – IF Frequency – MHz CONVERSION GAIN vs. IF FREQUENCY fRF = 2.0 GHz fRF = 900 MHz VCC = 5 V POSC = 0 dBm PRF = –30 dBm On test circuit PC2721 PC2722 CG NF VCC = 5 V PRF = –30 dBm POSC = –5 dBm fIF = 402 MHz On test circuit PC2721 +10 –10 –20 –30 –40 –50 +10 –10 –20 –30 –40 –50 –60 Pout – Output Power – dBm Pin – Input Power – dBm –40 –30 –20 –10 0 Pin – Input Power – dBm IM3 AND OUTPUT POWER vs. INPUT POWER fRF1 = 900 MHz fRF2 = 938 MHz fOSC = 1.3 GHz fRF1 = 2.0 GHz fRF2 = 2.038 GHz fOSC = 2.4 GHz VCC = 5 V IM3 AND OUTPUT POWER vs. INPUT POWER PC2722µPC2721µ fRF1 = 900 MHz fRF2 = 938 MHz fOSC = 1.3 GHz fRF1 = 2.0 GHz fRF2 = 2.038 GHz fOSC = 2.4 GHz VCC = 5 V µ µ µ µ µ µ µ Pout – Output Power – dBm
Data Sheet P11102EJ4V0DS006 µµµµPC2721, µµµµPC2722 VTU – Tuning Voltage – V fOSC – Oscillation Frequency – GHz f OSC – Oscillation Frequency – GHz fOSC – Oscillation Frequency – GHz f OSC – Oscillation Frequency – GHz OSC-TUNING VOLTAGE vs. OSC FREQUENCY 1.4 V – Oscillation stop (start) Voltage – V LOWER V CC VOLTAGE IN OSC OPERATION vs. OSC FREQUENCY +6.0 +4.0 +2.0 –2.0 –4.0 –6.0 1.4 Fstb – Oscillation Frequency Stability – MHz +6.0 +4.0 +2.0 –2.0 –4.0 –6.0 Fstb – Oscillation Frequency Stability – MHz VCC = 4.5 V 1.0 VCC = 5 V fIF = 402 MHz PC2721 OSC FREQUENCY STABILITY vs. OSC FREQUENCY VCC = 5.5 V VCC = 4.5 V VCC = 5.5 V 1.4 PC2722 OSC FREQUENCY STABILITY vs. OSC FREQUENCY VCC = 5.5 V VCC = 4.5 V VCC = 5.5 V µ µ VCC = 4.5 V
Data Sheet P11102EJ4V0DS00 7 µµµµPC2721, µµµµPC2722 TEST CIRCUIT S.G 50 Ω S.G 50 Ω Spectrum analyzer 50 Ω 10 Ω100 pF 100 Ω 0.5 pF 100 pF 2 pF20 pF 1 000 pF pF 100 pF 5.0 V PC2721µ APPLICATION CIRCUIT FOR REFERENCE RF IN 47 kΩ 2 pF 47 Ω 0.5 pF 100 pF 2 pF20 pF 1 000 pF 20 pF100 pF 5.0 V PC27212 pF 270 ΩL2 1SV210 Note IF OUT L2: 0.3 mm 2.0 mm 10T L4: 0.4 mm, = 4 mm µ φ φ φ Note Our varactor diodes are discontinued. For varactor diode, contact other supplier. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet P11102EJ4V0DS008 µµµµPC2721, µµµµPC2722 TEST CIRCUIT S.G 50 Ω S.G 50 Ω Spectrum analyzer 50 Ω 10 Ω100 pF 100 Ω 0.5 pF 100 pF 2 pF20 pF 1 000 pF pF 100 pF 5.0 V PC2722 0.8 pF 1.5 pF 1.8 H L1: 0.4 mm 4.0 mm 3T µ µ φφ APPLICATION CIRCUIT FOR REFERENCE RF IN 47 kΩ 2 pF 47 Ω 0.5 pF 100 pF 2 pF20 pF 20 pF100 pF 5.0 V PC27222 pF 270 ΩL2 1SV210 Note L1: 0.4 mm 4.0 mm 3T L2: 0.3 mm 2.0 mm 10T L4: 0.4 mm, = 4 mm 1 000 pF IF OUT µ φ φ φ φ φ Note Our varactor diodes are discontinued. For varactor diode, contact other supplier. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet P11102EJ4V0DS00 9 µµµµPC2721, µµµµPC2722 PACKAGE DIMENSIONS
8 PIN PLASTIC SOP (225 mil) (UNIT: mm)
NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. 1 4 M detail of lead end 5.2 ± 0.2 1.49 0.85 MAX. 1.27 0.12 1.57 ± 0.2 0.1 ± 0.1 6.5 ± 0.3 0.6 ± 0.2 1.1 ± 0.2 0.10 4.4 ± 0.15 +7˚ –3˚ 0.17 +0.08 –0.070.42 +0.08 –0.07
Data Sheet P11102EJ4V0DS0010 µµµµPC2721, µµµµPC2722
8 PIN PLASTIC SSOP (175 mil) (UNIT: mm)
NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 1 4 M detail of lead end
3.00 MAX
0.575 MAX. 0.65 0.10
1.8 MAX
0.1 ± 0.1 4.94 ± 0.2 1.5 ± 0.1 0.5 ± 0.2 0.87 ± 0.2 0.15 3.2 ± 0.1 +7˚ –3˚ 0.15 +0.10 –0.050.3 +0.10 –0.05
Data Sheet P11102EJ4V0DS00 11 µµµµPC2721, µµµµPC2722 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales officers in case other soldering process is used or in case soldering is done under different conditions. For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). µµµµPC2721/22 Soldering process Soldering conditions Symbol Infrared ray reflow Peak package’s surface temperature: 235 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: 3, Exposure limit Note : None IR35-00-3 VPS Peak package’s surface temperature: 215 °C or below, Reflow time: 40 seconds or below (200 °C or higher), Number of reflow process: 3, Exposure limit Note : None VP15-00-3 Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or below, Number of flow process: 1, Exposure limit Note : None WS60-00-1 Partial heating method Terminal temperature: 300 °C or below, Flow time: 3 seconds or below, Exposure limitNote: None Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Caution Do not apply more than single process at once, except the “Partial heating method”.
µµµµPC2721 , µµµµPC2722 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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