UPC2715T NEC | Alldatasheet
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Caution: Electro-static sensitive devices BIPOLAR ANALOG INTEGRATED CIRCUIT PPPPPC2715T
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1993© Document No. P12432EJ2V0DS00 (2nd edition) (Previous No. IC-2952) Date Published March 1997 N Printed in Japan DATA SHEET
FEATURES
- Low power consumption : 15 mW (V CC = 3.4 V, ICC = 4.5 mA) TYP.
- High power gain : 19 dB TYP. @ f = 0.5 GHz
- Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
- Input and output matching : 50 :
- Super small package : 6 pin mini mold
ORDERING INFORMATION
PART NUMBER PACKAGE SUPPLYING FORM PPC2715T-E3 6 pin mini mold Embossed tape 12 mm wide. Pin 1, 2, 3 face to perforation side of the tape. EQUIVALENT CIRCUIT PIN CONNECTIONS OUT VCC GND IN (Top View) C 1 L (Bottom View) 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. V CC
ABSOLUTE MAXIMUM RATINGS (T A = +25 °C) Supply Voltage V CC 4.1 V Total Circuit Current I CC 7.5 mA Power Dissipation P D 280* mW Operating Temperature T opt ð40 to +85 °C Storage Temperature T stg ð55 to +150 °C Input Power P in 0 dBm * Mounted on 50 u 50 u 1.6 mm epoxy glass PWD (TA = +85 °C) RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage V CC 3.06 3.4 3.74 V ELECTRICAL CHARACTERISTICS (T A = +25 °C, VCC = 3.4 V, ZS = ZL = 50 ::::) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Circuit Current I CC 3.3 4.5 5.7 mA No Signal Power Gain G P 16 19 23 dB f = 0.5 GHz Maximum Output Level P O(sat) ð9 ð6 dBm f = 0.5 GHz, P in = ð10 dBm Noise Figure NF 4.5 6.0 dB f = 0.5 GHz Upper Limit Operating Frequency f U 0.9 1.2 GHz 3 dB down below flat gain f = 0.1 GHz Isolation ISL 28 33 dB f = 0.5 GHz Input Return Loss RL in 12 17 dB f = 0.5 GHz Output Return Loss RL out 5 8 dB f = 0.5 GHz Gain Flatness 'G P ±1.0 dB f = 0.1 to 0.6 GHz
50 Ω IN C 1 2, 3, 5 C 3 1 000 pF VCC C 2 1 000 pF 50 Ω OUT 1 000 pF EXAMPLE OF APPLICATION CIRCUIT 50 Ω IN C 1 2, 3, 5 C 3 1 000 pF VCC C 4 1 000 pF C 5 2, 3, 5 C 6 1 000 pF C 2 1 000 pF 50 Ω OUT 1 000 pF1 000 pF R 1 50 to 200 Ω To stabilize operation, please connect R1, C5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Capacitors for VCC , input and output pins 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).]
TYPICAL CHARACTERISTICS (T A = òòòò25 °C) ICC – Circuit Current – mA3 CIRCUIT CURRENT vs. SUPPLY VOLTAGE 0 0.5 2 3 4 5 VCC – Supply Voltage – V ICC – Circuit Current – mA CIRCUIT CURRENT vs. OPERATING TEMPERATURE 0–40 Topt – Operating Temperature – °C 40 80 VCC = 3.4 V G P – Insertion Power Gain – dB 0.3 1.0 2.0 f – Frequency – GHz NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY NF – Noise Figure – dB 4 0 VCC = 3.74 V VCC = 3.4 V VCC = 3.06 V VCC = 3.4 V VCC = 3.06 V 0.1 0.3 1.0 2.0 f – Frequency – GHz G P – Insertion Power Gain – dB INSERTION POWER GAIN vs. FREQUENCY VCC = 3.4 V ISL – Isolation – dB ISOLATION vs. FREQUENCY 0.3 1.0 2.0 f – Frequency – GHz –20 –30 –40 0.1 VCC = 3.4 V 0.3 1.0 2.0 f – Frequency – GHz –20 –30 –40 –10 0.1 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY RL in – Input Return Loss – dB RL out – Output Return Loss – dB VCC = 3.4 V RL out RL in 1 1.5 4.5 2.5 3.5 –20 20 60 100 NF G P 0.1 TA = –40 °C 25 °C 85 °C –10 VCC = 3.74 V
PO – Output Power – dBm –10 –25 OUTPUT POWER vs. INPUT POWER –50 Pin – Input Power – dBm PO – Output Power – dBm Pin – Input Power – dBm VCC = 3.4 V f = 0.5 GHz PO(sat) – Saturated Output Power – dBm 0.2 2 f – Frequency – GHz –15 0.1 –30 –40 –30 –20 OUTPUT POWER vs. INPUT POWER SATURATED OUTPUT POWER vs. FREQUENCY IM3 – 3rd Order Intermodulation Distortion – dBc PO(each) – Output Power of Each Tone – dBm –60 –30 –20 –10 –40 –40 –20 –10 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –15 –10 f = 0.5 GHz 0.5 1 f 1 = 0.500 GHz f2 = 0.502 GHz –10 3.74 V 3.6 V Pin = –10 dBm –20 3.06 V 3.74 V VCC = 3.4 V –10 –25 –50 –30 –40 –30 –20 –15 –10 –20 TA = 85 °C TA = –40 °C TA = 85 °C TA = 25 °C TA = –40 °C VCC = 3.4 V VCC = 3.74 V 3.06 V 3.4 V –50
–160 –90 0060 8090100 110 120 130 140 150 0.02 –150 –140 0.06 0.44 0.12 0.38 0.26 0.24 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.48 0.02 0.47 0.37 0.25 0.23 0.21 0.19 0.17 0.15 0.130.11 0.09 0.07 0.05 0.03 0.01 0.01 0.03 0.04 0.46 0.45 0.05 –130 0.43000.07 –1200.08 0.42 0.41 0.09 –110 –1000.10 0.40 0.39 0.11 0.13 –80 –70 0.04 0.36 0.35 0.15 –60 0.16 0.34 0.33 0.17 –50 –40 –30 0.18 0.32 0.20 0.300.31 0.29 0.19 000.21 –20 –10 0.22 0.28 0.24 0.26 0.270.23 0.25 0.27 0.29 0.31 0.33 0.35 0.370.39 0.41 0.43 0.45 0.47 0.49 0.49 0.48 1.8 0.2 0.1 0.3 NEGATIVE REACTANCE COM PONENT O 0.4 0.5 0.6 0.7 0.8 1.0 1.4 1.6 2.0 3.0 4.0 6.0 5.0 3.0 4.0 2.0 0.3 0.4 0.5 0.6 6.0 4.0 3.0 1.8 1.6 1.4 0.21.00.90.8 0.5 0.4 0.3 0.2 +JX –––– Z O 0.2 0.4 0.6 0.8 0.7 0.6 0.1 0.1 0.2 0.7 0.8 0.9 1.0 1.2 1.4 1.6 R –––– ZO ) 1.0 0.8 1.0 0.6 0.4 0.2 0.2 0.4 0.8 0.6 1.0 1.0 0.2 0.4 0.6 0.8 0.9 1.2 1.8 2.0 REACTANCE COMPONENT ANGLE OF REFLECTION COEFFCIENT IN DEGREES W AVELENGTHS TOW ARD GENERATOR POS ITIVE REACTANCE CO MPONENT 0.1 G 0.5 G 1.0 G S22-FREQUENCY –160 –90 0060 8090100 110 120 130 140 150 0.02 –150 –140 0.06 0.44 0.12 0.38 0.26 0.24 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.48 0.02 0.47 0.37 0.25 0.23 0.21 0.19 0.17 0.15 0.130.11 0.09 0.07 0.05 0.03 0.01 0.01 0.03 0.04 0.46 0.45 0.05 –130 0.43000.07 –1200.08 0.42 0.41 0.09 –110 –1000.10 0.40 0.39 0.11 0.13 –80 –70 0.04 0.36 0.35 0.15 –60 0.16 0.34 0.33 0.17 –50 –40 –30 0.18 0.32 0.20 0.300.31 0.29 0.19 000.21 –20 –10 0.22 0.28 0.24 0.26 0.270.23 0.25 0.27 0.29 0.31 0.33 0.35 0.370.39 0.41 0.43 0.45 0.47 0.49 0.49 0.48 1.8 0.2 0.1 0.3 NEGATIVE REACTANCE COM PONENT O 0.4 0.5 0.6 0.7 0.8 1.0 1.4 1.6 2.0 3.0 4.0 6.0 5.0 3.0 4.0 2.0 0.3 0.4 0.5 0.6 6.0 4.0 3.0 1.8 1.6 1.4 0.21.00.90.8 0.5 0.4 0.3 0.2 +JX –––– Z O 0.2 0.4 0.6 0.8 0.7 0.6 0.1 0.1 0.2 0.7 0.8 0.9 1.0 1.2 1.4 1.6 R –––– ZO ) 1.0 0.8 1.0 0.6 0.4 0.2 0.2 0.4 0.8 0.6 1.0 1.0 0.2 0.4 0.6 0.8 0.9 1.2 1.8 2.0 REACTANCE COMPONENT ANGLE OF REFLECTION COEFFCIENT IN DEGREES W AVELENGTHS TOW ARD GENERATOR POS ITIVE REACTANCE CO MPONENT 0.1 G 0.5 G 1.0 G
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
0.13±0.10.3+0.1 –0.05 0.8 1.1 +0.2 –0.1 0 to 0.1 123 65 4 1.9 2.9±0.2 0.950.95 1.5 +0.2 –0.1 2.8 +0.2 –0.3
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the V CC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. PPC2715T Soldering method Soldering conditions Recommended condition symbols Infrared ray reflow Package peak temperature: 235 °C, Hour: within 30 s. (more than 210 °C), Time: 3 times, Limited days; no.* IR35-00-3 Hour: within 40 s. (more than 200 °C), Time: 3 times, Limited days: no.* VP15-00-3 Wave soldering Soldering tub temperature: less than 260 °C, Hour: within 10 s. Time: 1 time, Limited days: no.* WS60-00-1 Pin part heating Pin area temperature: less than 300 °C, Hour: within 3 s. Limited days: no.* *: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH. Note 1.The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Illustration of evaluation board for the test circuit 7.5 5 9– 7.5 Through holes 10 10 2.52.52.52.533 2.52.52.52.5 72– 0.5 Through holes 15 (Surface) 0.9 3 4.8 IN 2.8 1.2 1.2 0.4 7.5 OUT 2.8 30±0.05 VCC φ 7.55 φ φ 30±0.05 22 0.75 0.2 0.75 4.8 0.21.2 3.6 2.5 (Back side) Note (1) 30 uuuu 30 uuuu 0.4 mm double sided copper clad polyimide board. (2) Back side: GNDpattern (3) Solder plated on pattern (4) : Through holes
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5