UPC2713T NEC | Alldatasheet

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Technical content

1.5 GHz SILICON MMIC

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) mA 9 12 15 G S Small Signal Gain dB 26 29 33 fU Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 0.1 GHz) GHz 0.9 1.2 ∆G S Gain Flatness, f = 0.1∼0.8 GHz ±0.8 PSAT Saturated Output Power dBm 4 7 P1dB Output Power at 1dB Compression Point dBm -4 NF Noise Figure dB 3.2 4.5 RL IN Input Return Loss dB 10 13 RL OUT Output Return Loss dB 6 9 ISOL Isolation dB 35 40 ∆G T Gain -Temperature Coefficient dB/ °C -0.016 R TH Thermal Resistance (Junction to Ambient) °C/W 200 The UPC2713T is a Silicon Monolithic integrated circuit manu- factured using the NESAT III process. This device is suitable for applications which require high gain and wide-band opera- tion. It is designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/measurement equipment. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. UPC2713T

DESCRIPTION

FEATURES

  • FREQUENCY RESPONSE: 1.5 GHz
  • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE
  • 5 V SINGLE SUPPLY VOLTAGE
  • SUPER SMALL PACKAGE
  • TAPE AND REEL PACKAGING OPTION AVAILABLE GAIN vs. FREQUENCY Frequency, f (GHz) Gain, G S (dB) ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 0.5 GHz, VCC = 5 V) California Eastern Laboratories 0 0.5 1.0 1.5

ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 6 PIN Input Power dBm +10 PT Power Dissipation mW 280 2 TOP Operating Temperature °C -40 to +85 TSTG Storage Temperature °C -55 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C). RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER UNITS MIN TYP MAX VCC Supply Voltage V 4.5 5.0 5.5 UPC2713T TEST CIRCUIT NOISE FIGURE AND INSERTION GAIN vs. FREQUENCY CIRCUIT CURRENT vs. VOLTAGE TYPICAL PERFORMANCE CURVES (TA = 25°C) Supply Voltage, VCC (V) Operating Temperature, TOP (°C) Circuit Current, I CC (mA) Circuit Current, I CC (mA) Insertion Power Gain, G P (dB) CIRCUIT CURRENT vs. TEMPERATURE Frequency, f (GHz) Noise Figure, NF (dB) IN OUT VCC 1000 pF 1000 pF1000 pF 2, 3, 5 50 Ω C 1 C 2 L1000 nH *C 3 50 Ω 0 1 2 3 4 5 6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -60 -40 -20 0 20 40 60 80 100 0.1 0.3 1.0 3.0 Gp NF VCC = 5.0 V VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V RETURN LOSS vs. FREQUENCY Input Return Loss, RL IN (dB) Output Return Loss, RL OUT (dB) Frequency, f (GHz) 0.1 0.3 1.0 2.0 -10 -20 -30 -40 VCC = 5.0V RL OUT RL IN

Noise Figure, NF (dB) Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND VOLTAGE NOISE FIGURE vs. FREQUENCY Output Power, P OUT (dBm) Input Power, PIN (dBm) OUTPUT POWER vs. INPUT POWER AND TEMPERATURE Output Power, P OUT (dBm) Input Power, PIN (dBm) UPC2713T TYPICAL PERFORMANCE CURVES (TA = 25° C) POWER vs. FREQUENCY Power (dBm) Frequency, f (GHz) Isolation, ISOL (dB) ISOLATION vs. FREQUENCY Frequency, f (GHz) X: Typical SSB Third Order Intercept Point -60 -50 -40 -30 -20 -10 0 10 -10 -15 -20 -25 f = 0.5 GHZ VCC = 5.5 V VCC = 4.5 V VCC = 5.0 V -60 -50 -40 -30 -20 -10 0 10 -10 -15 -20 -25 VCC = 5.0 V f = 0.5 GHZ TA = 85˚ C TA = -40 ˚C TA = 25˚ C TA = 85˚ C TA = -40 ˚C TA = 25˚ C 0 0.5 1.0 1.5 0.1 0.3 1.0 3.0 -10 -20 -30 -40 VCC = 5.0V 0 0.5 1.0 1.5 2.0 -10 -15 PSAT P1dB X X

TYPICAL SCATTERING PARAMETERS (TA = 25° C) VCC = 5 V, ICC = 12 mA UPC2713T UPC2713T Note: 1. K factor calculations: FREQUENCY S

11 S21 S12 S22 K1 S21

(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) 2 |S12 S21|

PACKAGE OUTLINE (Units in mm) PACKAGE OUTLINE T06 LEAD CONNECTIONS PART NUMBER QTY UPC2713T-E3 3K/Reel Embossed Tape, 8 mm wide.

ORDERING INFORMATION

RECOMMENDED P.C.B. LAYOUT (Units in mm) Note: All dimensions are typical unless otherwise noted. 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. V CC (Top View) (Bottom View) VCC OUT GND IN +0.2 -0.32.8 1.5 +0.2 -0.1 3 4 1.9±0.2 -0.05 +0.100.3 0.13±0.11.1+0.2 -0.1 0 to 0.1 0.95 0.95 0.8 2.9±0.2 C1J 3.10 1 6 1.0 MIN

0.5 MIN

0.95 1.0 MIN EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 8/02/2000DATA SUBJECT TO CHANGE WITHOUT NOTICE