UPC2711TB

UPC2711TB_1 NEC | Alldatasheet

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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUITS µµµµPC2711TB, µµµµPC2712TB

5 V, SUPER MINIMOLD SILICON MMIC

Document No. P11510EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Printed in Japan DATA SHEET The mark shows major revised points. © 1996, 2000

DESCRIPTION

The µPC2711TB and µPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS tuners. These ICs are packaged in super minimold package which is smaller than conventional minimold. The µPC2711TB and µPC2712TB have each compatible pin connections and performance to µPC2711T/µPC2712T of conventional minimold version. So, in the case of reducing your system size, µPC2711TB/ µPC2712TB are suitable to replace from µPC2711T/µPC2712T. These ICs are manufactured using NEC’s 20 GHz fT NESAT  III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliability.

FEATURES

• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Supply voltage : V CC = 4.5 to 5.5 V
• Wideband response : f u = 2.9 GHz TYP. @µPC2711TB fu = 2.6 GHz TYP. @µPC2712TB
• Power gain variation : G P = 13 dB TYP. @µPC2711TB G P = 20 dB TYP. @µPC2712TB

APPLICATIONS

• Local buffer in DBS tuners, etc. :µPC2711TB
• RF stage buffer in DBS tuners, etc. :µPC2712TB

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC2711TB-E3 6-pin super minimold C1G µPC2712TB-E3 C1H Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order: µPC2711TB, µPC2712TB).

Data Sheet P11510EJ3V0DS002 µµµµPC2711TB, µµµµPC2712TB PIN CONNECTIONS Pin No. Pin Name

1 INPUT

PRODUCT LINE-UP OF 5V-BIAS SILICON MMIC WIDEBAND AMPLIFIERS (TA = +25°°°°C, VCC = 5.0 V, ZS = ZL = 50 ΩΩΩΩ ) Part No. f u (GHz) P O(sat) (dBm) G P (dB) NF (dB) I CC (mA) Package Marking µPC2711T 6-pin minimold µPC2711TB 2.9 +1 13 5.0 12 6-pin super minimold C1G µPC2712T 6-pin minimold µPC2712TB 2.6 +3 20 4.5 12 6-pin super minimold C1H µPC2713T 1.2 +7.0 29 3.2 @f = 0.5 GHz 12 6-pin minimold C1J µPC2791TB 1.9 +4.0 12 5.5 @f = 0.5 GHz 17 6-pin super minimold C2S µPC2792TB 1.2 +5.0 20 3.5 @f = 0.5 GHz

19 C2T

µPC3215TB 2.9 +3.5 20.5 2.3 @f = 1.5 GHz

14 C3H

Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguish between minimold and super minimold. (Top View) C1G (Bottom View) Marking is an example of PC2711TB µ

Data Sheet P11510EJ3V0DS00 3 µµµµPC2711TB, µµµµPC2712TB SYSTEM APPLICATION EXAMPLE RF unit block of DBS tuners 1st IF input from DBS converter PC2712TBµ BPF Mixer PC2711TBµ PC2711TBµ OSC LPF SAW AGC Amp. FM Demod. Baseband output Prescaler PLL Synth. PIN EXPLANATIONS Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT  1.00 0.97 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi- feedback circuit is designed to cancel the deviations of h FE and resistance. This pin must be coupled to signal source with capacitor for DC cut. 4O U T P U T  4.40 4.12 Signal output pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. This pin must be coupled to next stage with capacitor for DC cut. 6V CC 4.5 to 5.5  Power supply pin. This pin should be externally equipped with bypass capacitor to minimize ground impedance. GND 0  Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Note Pin voltage is measured at VCC = 5.0 V, Above: µPC2711TB, Below: µPC2712TB

Data Sheet P11510EJ3V0DS004 µµµµPC2711TB, µµµµPC2712TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25°C6 V Total Circuit Current I CC TA = +25°C3 0 m A Power Dissipation P D Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in TA = +25°C +10 dBm RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V CC 4.5 5.0 5.5 V Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (T A = +25°°°°C, VCC = 5.0 V, ZS = ZL = 50 ΩΩΩΩ ) µPC2711TB µPC2712TB Parameter Symbol Test Conditions Unit Circuit Current I CC No signal 9 12 15 9 12 15 mA Power Gain G P f = 1 GHz 11 13 16.5 18 20 23.5 dB Saturated Output Power P O(sat) f = 1 GHz, Pin = 0 dBm −2+ 1  0+ 3  dBm Noise Figure NF f = 1 GHz  56 . 5  4.5 6 dB Upper Limit Operating Frequency fu 3 dB down below from gain at f = 0.1 GHz Isolation ISL f = 1 GHz 25 30  28 33  dB Input Return Loss RL in f = 1 GHz 20 25  91 2  dB Output Return Loss RL out f = 1 GHz 9 12  10 13  dB Gain Flatness ΔG P f = 0.1 to 2.5 GHz @ µPC2711TB f = 0.1 to 2.0 GHz @ µPC2712TB

Data Sheet P11510EJ3V0DS00 5 µµµµPC2711TB, µµµµPC2712TB TEST CIRCUIT 50 Ω IN C 1 2, 3, 5 C 3 1 000 pF VCC C 2 1 000 pF 50 Ω OUT 1 000 pF EXAMPLE OF APPLICATION CIRCUIT 50 Ω IN C 1 2, 3, 5 C 3 1 000 pF VCC C 4 1 000 pF C 5 2, 3, 5 C 6 1 000 pF C 2 1 000 pF 50 Ω OUT 1 000 pF1 000 pF R 1 50 to 200 Ω To stabilize operation, please connect R1, C5 The application circuits and their parameters are for references only and are not intended for use in actual design-ins. CAPACITORS FOR V CC , INPUT AND OUTPUT PINS 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 π fZs).]

Data Sheet P11510EJ3V0DS006 µµµµPC2711TB, µµµµPC2712TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C IN OUT C VCC C1G 132 645 Mounting direction (Marking is an example for PC2711TB)µ Notes 30 × 30 × 0.4 mm double sided copper clad polyimide board. Back side: GND pattern Solder plated on pattern : Through holes Top View AMP-2 C For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC (P11976E). COMPONENT LIST Value C 1 000 pF

Data Sheet P11510EJ3V0DS00 7 µµµµPC2711TB, µµµµPC2712TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)  µPC2711TB  CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURECIRCUIT CURRENT vs. SUPPLY VOLTAGE NOISE FIGURE, POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY –10 –20 –30 –40 –50 0.1 0.3 1.0 3.0 123 Supply Voltage V CC (V) Frequency f (GHz) 0.1 0.3 1.0 3.0 Frequency f (GHz) 0.1 0.3 1.0 3.0 Frequency f (GHz) Input Return Loss RLin (dB) Output Return Loss RLout (dB) Isolation ISL (dB) Frequency f (GHz) Power Gain GP (dB) Noise Figure NF (dB) Power Gain GP (dB) Operating Ambient Temperature TA (°C) Circuit Current ICC (mA) Circuit Current ICC (mA) 456 – 6 0 –10 –20 –30 –40 0.1 0.3 1.0 3.0 –40 –20 0 +20 +40 +60 +80 +100 No input signalNo input signal V CC = 5.0 V VCC = 5.0 VVCC = 5.0 V VCC = 5.5 V VCC = 5.5 V VCC = 5.0 V G P NF VCC = 5.0 V VCC = 4.5 V TA = –40°C TA = –40°C TA = +25°C TA = +25°C TA = +85°C TA = +85°C VCC = 4.5 V RL in RL out VCC = 5.0 V

Data Sheet P11510EJ3V0DS008 µµµµPC2711TB, µµµµPC2712TB  µPC2711TB  –10 –15 Input Power P in (dBm) f = 1.0 GHz OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) –15 –10 –5 0 +5 –10 –15 Input Power P in (dBm) VCC = 5.0 V f = 1.0 GHz OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) –15 –10 –5 0 +5 –10 –15 Input Power P in (dBm) Frequency f (GHz) f = 2.0 GHz OUTPUT POWER vs. INPUT POWER SATURATED OUTPUT POWER vs. FREQUENCY Output Power Pout (dBm) +10 50 –10 –15 Saturated Output Power PO(sat) (dBm) Output Power of Each Tone PO(each) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) –15 –10 –5 0 +5 –10 –15 Input Power P in (dBm) VCC = 5.0 V OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) –15 –10 –5 0 +5 Pin = 0 dBm f1 = 1.000 GHz f2 = 1.002 GHz VCC = 5.0 V 5.5 V 4.5 V VCC = 5.0 V 5.5 V 4.5 V VCC = 5.0 V 5.5 V 4.5 V VCC = 5.0 V 5.5 V 4.5 V TA = +25°C +85°C –40°C –20°C f = 1.0 GHz f = 0.5 GHz f = 2.0 GHz f = 2.9 GHz Remark The graphs indicate nominal characteristics.

Data Sheet P11510EJ3V0DS00 9 µµµµPC2711TB, µµµµPC2712TB S-PARAMETERS (T A = +25°°°°C, VCC = 5.0 V)  µPC2711TB  S11-FREQUENCY W AVELENGTHS TOW ARD GENERATOR ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT –JX Zo +JXZo 0.1 G 1.0 G 2.9 G S22-FREQUENCY W AVELENGTHS TOW ARD GENERATOR ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT – JX Zo + JXZo 0.1 G 1.0 G 2.9 G

Data Sheet P11510EJ3V0DS0010 µµµµPC2711TB, µµµµPC2712TB TYPICAL S-PARAMETER VALUES (T A = +25°°°°C) µPC2711TB VCC = 5.0 V, ICC = 13.8 mA FREQUENCY S 11 S21 S12 S22 K

Data Sheet P11510EJ3V0DS00 11 µµµµPC2711TB, µµµµPC2712TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE NOISE FIGURE, POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY –10 –20 –30 –40 –50 0.1 0.3 1.0 3.0 123 Supply Voltage V CC (V) Frequency f (GHz) 0.1 0.3 1.0 3.0 Frequency f (GHz) 0.1 0.3 1.0 3.0 Frequency f (GHz) Input Return Loss RLin (dB) Output Return Loss RLout (dB) Isolation ISL (dB) Frequency f (GHz) Power Gain GP (dB) Noise Figure NF (dB) Power Gain GP (dB) Operating Ambient Temperature TA (˚C) Circuit Current ICC (mA) Circuit Current ICC (mA) 456 – 6 0 –10 –20 –30 –40 0.1 0.3 1.0 3.0 –20 +20 +60 +100–40 0 +40 +80 V CC = 5.0 V No input signalNo input signal VCC = 5.0 V VCC = 5.0 VVCC = 5.0 V VCC = 5.5 VVCC = 5.0 V G P NF VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V –40°C +25°C TA = +85°CVCC = 4.5 V RL in RL out

Data Sheet P11510EJ3V0DS0012 µµµµPC2711TB, µµµµPC2712TB +10 –10 –15 –20 –25 +10 –10 –15 –20 –25 +10 –10 –15 –20 –25 +10 –10 –15 –20 –25 Input Power P in (dBm) f = 1.0 GHz OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) VCC = 5.0 V f = 1.0 GHz OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) 0.1 0.3 1 3 –16 –14 –12 –10 –8 –6 –4 –2 0 Frequency f (GHz) f = 2.0 GHz OUTPUT POWER vs. INPUT POWER SATURATED OUTPUT POWER vs. FREQUENCY Output Power Pout (dBm) +10 –10 Saturated Output Power PO(sat) (dBm) Output Power of Each Tone PO(each) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Input Power Pin (dBm) VCC = 5.0 V OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Pin = –2 dBm f1 = 1.000 GHz f2 = 1.002 GHz VCC = 5.0 V 5.5 V 4.5 V VCC = 5.0 V 5.5 V 4.5 V VCC = 5.0 V 5.5 V 4.5 V 4.5 V TA = +25°C +85°C –40°C f = 1.0 GHz f = 0.5 GHz f = 2.0 GHz VCC = 5.0 V 5.5 V Input Power Pin (dBm) Remark The graphs indicate nominal characteristics.

Data Sheet P11510EJ3V0DS00 13 µµµµPC2711TB, µµµµPC2712TB S-PARAMETERS (T A = +25°°°°C, VCC = 5.0 V)  µPC2712TB  S11-FREQUENCY W AVELENGTHS TOW ARD GENERATOR→ ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT – JX Zo + JXZo 1.0 G 0.1 G 3.0 G 2.0 G ANGLEOFREFLECTIONCOEFFICIENTINDEGREES W AVELENGTHS TOW ARD GENERATOR POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT S22-FREQUENCY W AVELENGTHS TOW ARD GENERATOR ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT –JX Zo +JXZo 2.5 G 0.1 G 1.0 G 3.0 G ANGLEOFREFLECTIONCOEFFICIENTINDEGREES W AVELENGTHS TOW ARD GENERATOR POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT

Data Sheet P11510EJ3V0DS0014 µµµµPC2711TB, µµµµPC2712TB TYPICAL S-PARAMETER VALUES (T A = +25°°°°C) µPC2712TB VCC = 5.0 V, ICC = 13.9 mA FREQUENCY S 11 S21 S12 S22 K

Data Sheet P11510EJ3V0DS00 15 µµµµPC2711TB, µµµµPC2712TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT : mm) 0.9–0.1 0.7 0 to 0.1 0.15+0.1 –0.05 2.0–0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1–0.1 1.25–0.1 0.1 MIN.

Data Sheet P11510EJ3V0DS0016 µµµµPC2711TB, µµµµPC2712TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The DC cut capacitor must be each attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit Note : None IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit Note : None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit Note : None WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit Note : None Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P11510EJ3V0DS00 17 µµµµPC2711TB, µµµµPC2712TB [MEMO]

Data Sheet P11510EJ3V0DS0018 µµµµPC2711TB, µµµµPC2712TB [MEMO]

Data Sheet P11510EJ3V0DS00 19 µµµµPC2711TB, µµµµPC2712TB [MEMO]

µµµµPC2711TB, µµµµPC2712TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. M8E 00. 4 The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).