UPC2710TB-E3

UPC2710TB RENESAS | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC2710TB

5 V, SUPER MINIMOLD SILICON MMIC

MEDIUM OUTPUT POWER AMPLIFIER Document No. P13443EJ3V0DS00 (3rd edition) Date Published January 2001 N CP(K) Printed in Japan DATA SHEET © 1998, 2001

DESCRIPTION

The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz f T NESAT TM lll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

 Supply voltage : V CC = 4.5 to 5.5 V  Circuit current : I CC = 22 mA TYP. @VCC = 5.0 V  Power gain : G P = 33 dB TYP. @ f = 500 MHz  Medium output power : P O(sat) = +13.5 dBm TYP. @ f = 500 MHz  Upper limit operating frequency : f u = 1.0 GHz TYP. @ 3 dB bandwidth  Port impedance : input/output 50 Ω  High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION  PA driver for 900 MHz band cellular telephone

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC2710TB-E3 6-pin super minimold C1F Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2710TB) Caution Electro-static sensitive devices The mark shows major revised points

µµµµPC2710TB PIN CONNECTIONS Pin No. Pin Name

1 INPUT

(Top View) (Bottom View) 6V CC PRODUCT LINE-UP (TA = +25°°°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ) Part No. fu (GHz) PO(sat) (dBm) GP (dB) NF (dB) ICC (mA) Package Marking µPC2708T 6-pin minimold µPC2708TB 2.9 +10.0 15 6.5 26 6-pin super minimold C1D µPC2709T 6-pin minimold µPC2709TB 2.3 +11.5 23 5.0 25 6-pin super minimold C1E µPC2710T 6-pin minimold µPC2710TB 1.0 +13.5 33 3.5 22 6-pin super minimold C1F µPC2776T 6-pin minimold µPC2776TB 2.7 +8.5 23 6.0 25 6-pin super minimold C2L Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Notice The package size distinguishes between minimold and super minimold.

Data Sheet P13443EJ3V0DS 3 µµµµPC2710TB SYSTEM APPLICATION EXAMPLE EXAMPLE OF 900 MHz BAND DIGITAL CELLULER TELEPHONE DEMOD. PLL I I Q Q PLL PATX PC2710TB Driver 90° SW RX µ φ

µµµµPC2710TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT – 0.90 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of h FE and resistance. This pin must be coupled to signal source with capacitor for DC cut. GND 0 – Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference.

4 OUTPUT Voltage as

V CC through external inductor – Signal output pin. The inductor must be attached between V CC and output pins to supply current to the internal output transistors. 6V CC 4.5 to 5.5 – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. 23 5 Note Pin voltage is measured at VCC = 5.0 V

Data Sheet P13443EJ3V0DS 5 µµµµPC2710TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25°C, pin 4 and pin 6 5.8 V Total Circuit Current I CC TA = +25°C6 0 m A Power Dissipation P D Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85°C 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in TA = +25°C +10 dBm RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remark Supply Voltage V CC 4.5 5.0 5.5 V The same voltage should be applied to pin 4 and pin 6.

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA = +25°°°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No signal 16 22 29 mA Power Gain G P f = 500 MHz 30 33 36.5 dB Saturated Output Power P O(sat) f = 500 MHz, Pin = –8 dBm +11.0 +13.5 – dBm Noise Figure NF f = 500 MHz – 3.5 5.0 dB Upper Limit Operating Frequency fu 3 dB down below flat gain at f = 0.1 GHz 0.7 1.0 – GHz Isolation ISL f = 500 MHz 34 39 – dB Input Return Loss RL in f = 500 MHz 3 6 – dB Output Return Loss RL out f = 500 MHz 9 12 – dB Gain Flatness ∆GP f = 0.1 to 0.6 GHz – ±0.8 – dB

µµµµPC2710TB TEST CIRCUIT VCC 1 000 pF 1 000 pF 1 000 pF C1 C2 L 2, 3, 5 50 Ω50 Ω OUTIN COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS EXAMPLE OF ACTURAL APPLICATION COMPONENTS Type Value Type Value Operating Frequency C1, C2 Bias Tee 1 000 pF C 1 to C3 Chip Capacitor 1 000 pF 100 MHz or higher C3 Capacitor 1 000 pF 300 nH 10 MHz or higher L Bias Tee 1 000 nH 100 nH 100 MHz or higher L Chip Inductor 10 nH 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the V CC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the V CC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the V CC pin is used to minimize ground impedance of V CC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc).

Data Sheet P13443EJ3V0DS 7 µµµµPC2710TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C1F 321 456 Top View Mounting Direction Notes 30 × 30 × 0.4 mm double sided copper clad polyimide board. Back side: GND pattern Solder plated on pattern : Through holes IN OUT C VCC AMP-2 CC L For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF 6-PIN SUPER MINIMOLD SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P13252E). COMPONENT LIST Value C 1 000 pF L 300 nH

µµµµPC2710TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C) 0 123456 Circuit Current ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) No signal 0−60 +20 +100 Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Operating Ambient Temperature TA (°C) No signal VCC = 5.0 V NOISE FIGURE, POWER GAIN vs. FREQUENCY 0.3 1.0 2.0 Power Gain GP (dB) Frequency f (GHz) 0.1 4.5 3.5Noise Figure NF (dB) NF VCC = 4.5 V VCC = 5.0 V VCC = 5.0 V GP VCC = 5.5 V VCC = 4.5 VVCC = 5.5 V 0.3 1.0 2.0 Power Gain GP (dB) Frequency f (GHz) 0.1

30 TA = +85°C

TA = +25°C VCC = 5.0 V POWER GAIN vs. FREQUENCY TA = −40°C −20 −30 −40 0.1 0.3 1.0 Isolation ISL (dB) Frequency f (GHz) −50 −10 ISOLATION vs. FREQUENCY 2.0 VCC = 5.0 V INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY −10 −20 1.00.3 2.0 Input Return Loss RLin (dB) Output Return Loss RLout (dB) Frequency f (GHz) −50 0.1 −30 −40 VCC = 5.0 V RLin RLout

Data Sheet P13443EJ3V0DS 9 µµµµPC2710TB OUTPUT POWER vs. INPUT POWER +20 +15 −40 0 +10 Output Power Pout (dBm) Input Power Pin (dBm) −10 −15 −10 −5 +10 −15 −20−25−30 +5 VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V f = 0.5 GHz −35 OUTPUT POWER vs. INPUT POWER +20 +15 −40 0 +10 Output Power Pout (dBm) Input Power Pin (dBm) −10 −15 −10 −5 +10 −15 −20−25−35 +5 VCC = 5.0 V f = 0.5 GHz TA = −40°C TA = +25°C TA = +85°C −30 OUTPUT POWER vs. INPUT POWER +20 +15 0 +10 Output Power Pout (dBm) Input Power Pin (dBm) −10 −15 −10 −5 +10 −15 −20−25−30 +5 f = 1.0 GHz VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V −40 −35 OUTPUT POWER vs. INPUT POWER +20 +15 +10 Output Power Pout (dBm) Input Power Pin (dBm) −10 +10 −15 +50 f = 1.0 GHz VCC = 5.0 V f = 0.5 GHz SATURATED OUTPUT POWER vs. FREQUENCY +20 +14 0.5 1.0 2.0 Saturated Output Power PO (sat) (dBm) Frequency f (GHz) 0.1 +18 +16 +12 +10 0.2 Pin = −8 dBm VCC = 5.0 V VCC = 4.5 V VCC = 5.5 V −60 −50 −40 −30 −10 +10 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO (each) (dBm) −20 −10 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 0.500 GHz f2 = 0.502 GHz VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V

Data Sheet P13443EJ3V0DS10 µµµµPC2710TB S-PARAMETERS (TA = +25°°°°C, VCC = Vout = 5.0 V) S11-FREQUENCY

2.0 GHz

3.0 GHz

0.1 GHz

1.0 GHz

Data Sheet P13443EJ3V0DS 11 µµµµPC2710TB TYPICAL S-PARAMETER VALUES (TA = +25°°°°C) VCC = Vout = 5.0 V, ICC = 22 mA FREQUENCY S 11 S21 S12 S22 K

Data Sheet P13443EJ3V0DS12 µµµµPC2710TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 2.0±0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1±0.1 1.25±0.1 0.1 MIN.

Data Sheet P13443EJ3V0DS 13 µµµµPC2710TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to V CC line. (4) The inductor must be attached between V CC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input pin and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300 °C or below Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25 °C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P13443EJ3V0DS14 µµµµPC2710TB [MEMO]

Data Sheet P13443EJ3V0DS 15 µµµµPC2710TB [MEMO]

µµµµPC2710TB NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. M8E 00. 4 The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).