UPC2709T RENESAS | Alldatasheet
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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC2709T
5 V, MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER © 1994, 2000 Document No. P12426EJ3V1DS00 (3rd edition) Date Published May 2000 N CP(K) Printed in Japan DATA SHEET
DESCRIPTION
The µPC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is packaged in minimold package. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
- Supply voltage : V CC = 4.5 to 5.5 V
- Wideband response : f u = 2.3 GHz TYP. @3 dB bandwidth
- Medium output power : P O (sat) = +11.5 dBm@f = 1 GHz with external inductor
- Power gain : G P = 23 dB TYP. @f = 1 GHz
- Port impedance : input/output 50 Ω
APPLICATIONS
- 1st IF amplifiers in DBS converters
- RF stage buffer in DBS tuners, etc.
ORDERING INFORMATION
Part Number Package Marking Supplying Form µPC2709T-E3 6-pin minimold C1E Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2709T)
Data Sheet P12426EJ3V1DS002 µµµµPC2709T PIN CONNECTIONS PRODUCT LINE-UP OF µµµµPC2709 (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ ) Part No. fu (GHz) PO (sat) (dBm) G P (dB) NF (dB) ICC (mA) Package Marking µPC2709T 6-pin minimold µPC2709TB 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguishes between minimold and super minimold. C1E25523+11.52.3 (Top View) C1E (Bottom View) Pin No. Pin Name
1 INPUT
Data Sheet P12426EJ3V1DS00 3 µµµµPC2709T SYSTEM APPLICATION EXAMPLE EXAMPLE OF DBS CONVERTERS BS Antenna (DBS ODU) RF Amp. Mixer IF Amp. Oscillator PC2709T/TB Parabola Antenna To IDU µ PC2711T/TBµ PC2712T/TBµ EXAMPLE OF 900 MHz BAND, 1.5 GHz BAND DIGITAL CELLULAR TELEPHONE PC2709T/TBµ DEMO PLL φPA SW I Q Driver 0˚ 90˚ Q I RX TX PLL To know the associated products, please refer to each latest data sheet.
Data Sheet P12426EJ3V1DS004 µµµµPC2709T PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT − 1.05 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connec- tion over a wide band. A multi-feedback circuit is de- signed to cancel the deviations of h FE and resistance. This pin must be coupled to sig- nal source with capacitor for DC cut.
4 OUTPUT Voltage
− Signal output pin. The inductor must be attached between V CC and output pins to supply current to the internal output transistors. 6V CC 4.5 to 5.5 − Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be con- nected together with wide ground pattern to decrease impedance difference. Note Pin voltage is measured at VCC = 5.0 V 1IN VCC OUT GNDGND 23 5
Data Sheet P12426EJ3V1DS00 5 µµµµPC2709T ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Conditions Supply Voltage V CC 6V T A = +25°C, Pin 4 and 6 Total Circuit Current I CC 60 mA T A = +25°C Power Dissipation P D 280 mW Mounted on double copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in +10 dBm T A = +25°C RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Notice Supply Voltage V CC 4.5 5.0 5.5 V The same voltage should be applied to pin 4 and 6. Operating Ambient Temperature T A −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (T A = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ ) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No Signal 19 25 32 mA Power Gain G P f = 1 GHz 21.0 23.0 26.5 dB Maximum Output Level P O (sat) f = 1 GHz, Pin = 0 dBm +9.0 +11.5 − dBm Noise Figure NF f = 1 GHz − 5.0 6.5 dB Upper Limit Operating Frequency fu 3 dB down below flat gain at f = 0.1 GHz 2.0 2.3 − GHz Isolation ISL f = 1 GHz 26 31 − dB Input Return Loss RL in f = 1 GHz 7 10 − dB Output Return Loss RL out f = 1 GHz 7 10 − dB Gain Flatness ΔG P f = 0.1 to 1.8 GHz −± 1.0 − dB
Data Sheet P12426EJ3V1DS006 µµµµPC2709T TEST CIRCUIT VCC 1 000 pF 1 000 pF 1 000 pF C 1 C 2 L 2, 3, 5 50 Ω50 Ω OUTIN C 3 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS EXAMPLE OF ACT URAL APPLICATION COMPONENTS Type Value Type Value Operating Frequency C 3 Capacitor 1 000 pF C1 to C3 Chip C apacitor 1 000 pF 100 MHz or higher L Bias Tee 1 000 nH L Chip Inductor 300 nH 10 MHz or higher C 1 to C2 Bias Tee 1 000 pF 100 nH 100 MHz or higher 10 nH 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE V CC , INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc).
Data Sheet P12426EJ3V1DS00 7 µµµµPC2709T ILLUSTRATION OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD IN C1E OUT C C C VCC L 123 654 Top View Mounting Direction For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E). COMPONENT LIST Value C 1 000 pF L 300 nH Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes
Data Sheet P12426EJ3V1DS008 µµµµPC2709T TYPICAL CHARACTERISTICS (T A = +25°C unless otherwise specified) 0 123456 ICC – Circuit Current – mA CIRCUIT CURRENT vs. SUPPLY VOLTAGE VCC – Supply Voltage – V 0–60 +20 +100 ICC – Circuit Current – mA CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE TA – Operating Ambient Temperature – °C VCC = 5.0 V NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 0.3 1.0 3.0 G P – Insertion Power Gain – dB f – Frequency – GHz 0.1 NF – Noise Figure – dB VCC = 5.5 V NF VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V G P 0.3 1.0 3.0 G P – Insertion Power Gain – dB f – Frequency – GHz 0.1 VCC = 5.0 V –20 –30 –40 0.1 0.3 1.0 ISL – Isolation – dB f – Frequency – GHz –50 VCC = 5.0 V –10 ISOLATION vs. FREQUENCY 3.0 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY –10 –20 1.00.3 3.0 RL in – Input Return Loss – dB RL out – Output Return Loss – dB f – Frequency – GHz –50 0.1 –30 –40 VCC = 5.0 V RL in RL out INSERTION POWER GAIN vs. FREQUENCY TA = +25°C VCC = 5.0 V VCC = 4.5 V TA = –40°C TA = +85°C
Data Sheet P12426EJ3V1DS00 9 µµµµPC2709T OUTPUT POWER vs. INPUT POWER +15 +10 –35 0 +10 PO – Output Power – dBm Pin – Input Power – dBm –15 –15 –10 –5 –10 –20 –20–25–30 +5 f = 1.0 GHz VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V OUTPUT POWER vs. INPUT POWER +15 +10 –35 0 +10 PO – Output Power – dBm Pin – Input Power – dBm –15 –15 –10 –5 –10 –20 –20–25–30 +5 TA = +85°CTA = –40°C VCC = 5.0 V f = 1.0 GHz OUTPUT POWER vs. INPUT POWER +15 +10 –35 0 +10 PO – Output Power – dBm Pin – Input Power – dBm –15 –15 –10 –5 –10 –20 –20–25–30 +5 OUTPUT POWER vs. INPUT POWER +15 +10 –35 0 +10 PO – Output Power – dBm Pin – Input Power – dBm –15 –15 –10 –5 –10 –20 –20–25–30 +5 VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V f = 1.0 GHz f = 2.0 GHz f = 0.5 GHz VCC = 5.0 V SATURATED OUTPUT POWER vs. FREQUENCY +20 +14 0.3 1 3 PO(sat) – Saturated Output Power – dBm f – Frequency – GHz 0.1 Pin = 0 dB +18 +16 +12 +10 VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V –60 –50 –40 –30 –10 +10 IM3 – 3rd Order Intermodulation Distortion – dBc PO(each) – Output Power of Each Tone – dBm –20 –10 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 1 .000 GHz f2 = 1 .002 GHz VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V f = 2.0 GHz TA = +25°C
Data Sheet P12426EJ3V1DS0010 µµµµPC2709T S-PARAMETER (V CC = Vout = 5.0 V) S11-FREQUENCY 00 60 8090100 110 120 130 140 150 0.280.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.130.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.370.39 0.41 0.43 0.45 0.47 0.2 0.1 0.3 NEGATIVE REACTANCE COM PONENT 0.4 0.5 0.6 0.7 0.8 2.0 6.0 4.0 3.0 1.8 1.6 1.4 +JX –––– Z O 0.2 0.4 0.6 0.8 R –––– ZO 1.0 0.2 0.4 0.8 0.6 1.0 REACTANCE COMPONENT ANGLE OF REFLECTION COEFFCIENT IN DEGREES W AVELENGTHS TOW ARD GENERATOR POS ITIVE REACTANCE CO MPONENT 1.0 G 3.0 G 0.1 G S22-FREQUENCY 00 60 8090100 110 120 130 140 150 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.130.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.370.39 0.41 0.43 0.45 0.47 0.2 0.1 0.3 NEGATIVE REACTANCE COM PONENT 0.4 0.5 0.6 0.7 0.8 2.0 6.0 4.0 3.0 1.8 1.6 1.4 +JX –––– Z O 0.2 0.4 0.6 0.8 R –––– ZO 1.0 0.2 0.4 0.8 0.6 1.0 REACTANCE COMPONENT ANGLE OF REFLECTION COEFFCIENT IN DEGREES W AVELENGTHS TOW ARD GENERATOR POS ITIVE REACTANCE CO MPONENT 1.0 G 3.0 G 2.0 G 0.1 G
Data Sheet P12426EJ3V1DS00 11 µµµµPC2709T TYPICAL S-PARAMETER VALUES (T A = +25°C) µPC2709T VCC = Vout = 5.0 V, ICC = 30 mA Frequency S11 S21 S12 S22 K MHz MAG ANG MAG ANG MAG ANG MAG ANG
Data Sheet P12426EJ3V1DS0012 µµµµPC2709T PACKAGE DIMENSIONS 6 pin minimold (Unit: mm) 0.13–0.10.3 +0.1 –0.05 0.8 1.1 +0.2 –0.1 0 to 0.1 123 65 4 1.9 2.9–0.2 0.950.95 1.5 +0.2 –0.1 2.8 +0.2 –0.3
Data Sheet P12426EJ3V1DS00 13 µµµµPC2709T NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and condi- tions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit Note : None IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit Note : None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit Note : None WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Exposure limit Note : None Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12426EJ3V1DS0014 µµµµPC2709T [MEMO]
Data Sheet P12426EJ3V1DS00 15 µµµµPC2709T [MEMO]
µµµµPC2709T ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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- NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
- Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
- While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
- NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8