UPC2708TB RENESAS | Alldatasheet
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC2708TB
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER DATA SHEET The mark shows major revised points.Document No. P13442EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Printed in Japan © 1998, 2000
DESCRIPTION
The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional minimold version. So, in the case of reducing your system size, µPC2708TB is suitable to replace from µPC2708T. This IC is manufactured using NEC’s 20 GHz fT NESAT TM lll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
- High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
- Wideband response : f u = 2.9 GHz TYP. @ 3 dB bandwidth
- Medium output power : P O(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor
- Supply voltage : V CC = 4.5 to 5.5 V
- Power gain : G P = 15 dB TYP. @ f = 1 GHz
- Port impedance : input/output 50 Ω
APPLICATIONS
- 1st IF amplifiers in BS/CS converters, etc.
- 1st IF stage buffer in BS/CS tuners, etc.
ORDERING INFORMATION
Part Number Package Marking Supplying Form µPC2708TB-E3 6-pin super minimold C1D Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order: µPC2708TB). Caution Electro-static sensitive devices
Data Sheet P13442EJ3V0DS002 µµµµPC2708TB PIN CONNECTIONS Pin No. Pin Name
1 INPUT
(Top View) (Bottom View) 6V CC PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ ) Part No. fu (GHz) PO(sat) (dBm) G P (dB) NF (dB) ICC (mA) Package Marking µPC2708T 6-pin minimold µPC2708TB 2.9 +10.0 15 6.5 @f = 1 GHz 26 6-pin super minimold C1D µPC2709T 6-pin minimold µPC2709TB 2.3 +11.5 23 5 @f = 1 GHz 25 6-pin super minimold C1E µPC2710T 6-pin minimold µPC2710TB 1.0 +13.5 33 3.5 @f = 0.5 GHz 22 6-pin super minimold C1F µPC2776T 6-pin minimold µPC2776TB 2.7 +8.5 23 6.0 @f = 1 GHz 25 6-pin super minimold C2L Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguishes between minimold and super minimold.
Data Sheet P13442EJ3V0DS00 3 µµµµPC2708TB SYSTEM APPLICATION EXAMPLE EXAMPLE OF DBS CONVERTERS BS Antenna (DBS ODU) IF Amp.RF Amp. Mixer Oscillator PC2708TBµ PC2711TB PC2712TB µ µ To IDUParabola Antenna EXAMPLE OF 2.4 GHz BAND RECIEVER PC2708TBµ DEMOD. PLL PA SW I Q Driver 0° 90° Q I RX TX PLL φ
Data Sheet P13442EJ3V0DS004 µµµµPC2708TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT – 1.16 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of h FE and resistance. This pin must be coupled to signal source with capacitor for DC cut.
4 OUTPUT Voltage
– Signal output pin. The inductor must be attached between V CC and output pins to supply current to the internal output transistors. 6V CC 4.5 to 5.5 – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. GND 0 – Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 1IN VCC OUT GNDGND 23 5 Note Pin voltage is measured at VCC = 5.0 V
Data Sheet P13442EJ3V0DS00 5 µµµµPC2708TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25°C, Pin 4 and 6 6 V Total Circuit Current I CC TA = +25°C6 0 m A Power Dissipation P D Mounted on doublesided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in TA = +25°C +10 dBm RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remark Supply Voltage V CC 4.5 5.0 5.5 V The same voltage should be applied to pin 4 and 6. Operating Ambient Temperature T A −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = +25°°°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ ) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current I CC No input Signal 20 26 33 mA Power Gain G P f = 1 GHz 13.0 15.0 18.5 dB Saturated Output Power P O(sat) f = 1 GHz, Pin = 0 dBm +7.5 +10.0 – dBm Noise Figure NF f = 1 GHz – 6.5 8.0 dB Upper Limit Operating Frequency f u 3 dB down below flat gain at f = 0.1 GHz 2.7 2.9 – GHz Isolation ISL f = 1 GHz 18 23 – dB Input Return Loss RL in f = 1 GHz 8 11 – dB Output Return Loss RL out f = 1 GHz 16 20 – dB Gain Flatness ΔG P f = 0.1 to 2.6 GHz – ±0.8 – dB
Data Sheet P13442EJ3V0DS006 µµµµPC2708TB TEST CIRCUIT VCC 1 000 pF 1 000 pF 1 000 pF C 1 C 2 L 2, 3, 5 50 Ω50 Ω OUTIN C 3 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS EXAMPLE OF ACTURAL APPLICATION COMPONENTS Type Value Type Value Operating Frequency C 1, C2 Bias Tee 1 000 pF C 1 to C3 Chip Capacitor 1 000 pF 100 MHz or higher C 3 Capacitor 1 000 pF 300 nH 10 MHz or higher L Bias Tee 1 000 nH 100 nH 100 MHz or higher L Chip Inductor 10 nH 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE V CC , INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc).
Data Sheet P13442EJ3V0DS00 7 µµµµPC2708TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN OUT C VCC C1D 321 456 AMP-2 CC Top View Mounting Direction Notes 30 × 30 × 0.4 mm double sided copper clad polyimide board. Back side: GND pattern Solder plated on pattern : Through holes L For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E). COMPONENT LIST Value C 1 000 pF L 300 nH
Data Sheet P13442EJ3V0DS008 µµµµPC2708TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE NOISE FIGURE, POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY Circuit Current ICC (mA) Circuit Current ICC (mA) Power Gain GP (dB) Input Return Loss RLin (dB) Output Return Loss RLout (dB) Power Gain GP (dB) Supply Voltage VCC (V) Operating Ambient Temperature T A (°C) Frequency f (GHz) ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) Frequency f (GHz) Frequency f (GHz)
5 Noise Figure NF (dB)
–20 –30 –40 0.1 0.3 1.0 –50 V CC = 5.0 V –10 3.0 0–60 +20 +100 No input signal VCC = 5.0 V 123456 No input signal –10 –20 1.00.3 3.0 –40 0.1 VCC = 5.0 V –30 RL in RL out 0.3 1.0 3.0 0.1 G P VCC = 5.5 V NFVCC = 4.5 V VCC = 5.0 V VCC = 5.0 V VCC = 4.5 V VCC = 5.5 V 0.3 1.0 3.00.1 VCC = 5.0 V TA = +85°C TA = –40°C TA = +25°C TA = +85°C TA = +25°C TA = –40°C
Data Sheet P13442EJ3V0DS00 9 µµµµPC2708TB OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Output Power Pout (dBm) Output Power Pout (dBm) Output Power Pout (dBm) Input Power Pin (dBm) Input Power P in (dBm) Input Power Pin (dBm) SATURATED OUTPUT POWER vs. FREQUENCY 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Saturated Output Power PO (sat) (dBm) 3rd Order Intermodulation Distotion IM3 (dBc) Frequency f (GHz) Output Power of Each Tone P O (each) (dBm) Input Power Pin (dBm) +15 +10 0.1 VCC = 5.0 V VCC = 5.5 V Pin = 0 dBm VCC = 4.5 V +15 +10 –30 0 +5 –15 –15 –10 –5 –10 –20 VCC = 5.5 V VCC = 4.5 V f = 2.0 GHz VCC = 5.0 V +15 +10 –15 –10 –20 f = 1.0 GHzVCC = 5.0 V f = 2.9 GHz f = 2.0 GHz f1 = 1 .000 GHz f2 = 1 .002 GHz VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V +15 +10 –30 0 +5 –15 –15 –10 –5 –10 –20 –20–25 f = 1.0 GHz VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V +15 +10 –30 0 +5 –15 –15 –10 –5 –10 –20 –20–25 TA = –40°C TA = +25°C f = 1.0 GHz VCC = 5.0 V TA = +85°C Remark The graphs indicate nominal characteristics.
Data Sheet P13442EJ3V0DS0010 µµµµPC2708TB S-PARAMETERS (T A = +25°C, VCC = Vout = 5.0 V) S11-FREQUENCY
0.1 GHz
1.0 GHz
2.0 GHz
3.0 GHz
3.0 GHz 0.1 GHz
Data Sheet P13442EJ3V0DS00 11 µµµµPC2708TB TYPICAL S-PARAMETER VALUES (T A = +25°C) VCC = Vout = 5.0 V, ICC = 27 mA FREQUENCY S11 S21 S12 S22 K
Data Sheet P13442EJ3V0DS0012 µµµµPC2708TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 0.9–0.1 0.7 0 to 0.1 0.15+0.1 –0.05 2.0–0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1–0.1 1.25–0.1 0.1 MIN.
Data Sheet P13442EJ3V0DS00 13 µµµµPC2708TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P13442EJ3V0DS0014 µµµµPC2708TB [MEMO]
Data Sheet P13442EJ3V0DS00 15 µµµµPC2708TB [MEMO]
µµµµPC2708TB NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. M8E 00. 4 The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).