UPC2708T NEC | Alldatasheet

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PART NUMBER UPC2708T UPC2711T PACKAGE OUTLINE T06 T06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICC Circuit Current (no signal) mA 20 26 33 9 12 15 G S Small Signal Gain dB 13 15 18.5 11 13 16.5 fU Upper Limit Operating Frequency ΔG S Gain Flatness, f = 0.1 - 2.6 GHz dB ±0.8 PSAT Saturated Output Power dBm 7.5 10 -2 1 P1dB Output Power at 1 dB Compression Point dBm 7.5 -4 NF Noise Figure dB 6.5 8 5 6.5 RL IN Input Return Loss dB 8 11 20 25 RL OUT Output Return Loss dB 16 20 9 12 ISOL Isolation dB 18 23 25 30 ΔG T Gain-Temperature Coefficient dB/ °C +0.002 -0.002 R TH Thermal Resistance (Junction to Ambient) °C/W 200 200 The UPC2708T and UPC2711T are Silicon Monolithic inte- grated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/ measurement equipment. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance.

DESCRIPTION

ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 1 GHz, VCC = 5 V) UPC2708T UPC2711T

3 GHz SILICON MMIC

FEATURES

  • WIDE FREQUENCY RESPONSE: 3 GHz
  • HIGH GAIN: 15 dB (UPC2708T)
  • SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
  • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE
  • 5 V SINGLE SUPPLY VOLTAGE
  • SUPER SMALL PACKAGE
  • TAPE AND REEL PACKAGING OPTION AVAILABLE UPC2708 UPC2711 Gain, GS (dB) Frequency, f (GHz) GAIN vs. FREQUENCY California Eastern Laboratories

ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 6 PIN Input Power dBm +10 PT Power Dissipation2 mW 280 TOP Operating Temperature °C -40 to +85 TSTG Storage Temperature °C -55 to +150 RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER UNITS MIN TYP MAX VCC Supply Voltage V 4.5 5.0 5.5 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C). UPC2708T, UPC2711T IN OUT VCC 1000 pF 1000 pF1000 pF 2, 3, 5 50 Ω C 1 C 2 L1000 nH *C 3 50 Ω TEST CIRCUIT -60 -40 -20 0 20 40 60 80 100 UPC2708T UPC2711T VCC = 5.0 V Circuit Current, ICC (mA) Circuit Current, ICC (mA) 0 1 2 3 4 5 6 UPC2708T UPC2711T CIRCUIT CURRENT vs. VOLTAGE Operating Temperature, TOP (°C)Supply Voltage, VCC (V) CIRCUIT CURRENT vs. TEMPERATURE TYPICAL PERFORMANCE CURVES (TA = 25°C) * UPC2708T only 0.1 0.3 1.0 3.0 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V NF Gp VCC = 5.5 V VCC = 5.0 VVCC = 4.5 V Noise Figure, NF (dB) Frequency, f (GHz) 0.1 0.3 1.0 3.0 Gp NF 5.5 V 4.5 V VCC = 5.5 V VCC = 5.0 V VCC = 5.0 V VCC = 4.5 V Noise Figure, NF (dB) Gain, GS (dB) Gain, GS (dB) Frequency, f (GHz) UPC2711T GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE UPC2708T GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE

Isolation, ISOL (dB) Isolation, ISOL (dB) TYPICAL PERFORMANCE CURVES (TA = 25°C) Input Return Loss (dB) Output Return Loss (dB) Input Return Loss (dB) Output Return Loss (dB) UPC2708T INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0.1 0.3 1.0 3.0 -10 -20 -30 -40 VCC = 5.0 V RL in RL out Frequency, f (GHz) UPC2711T INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0.1 0.3 1.0 3.0 -10 -20 -30 -40 VCC = 5.0 V RL out RL in Frequency, f (GHz) 0.1 0.3 1.0 3.0 -10 -20 -30 -40 -50 VCC = 5.0 V UPC2708T ISOLATION vs. FREQUENCY Frequency, f (GHz) 0.1 0.3 1.0 3.0 VCC = 5.0 V -10 -20 -30 -40 -50 UPC2711T ISOLATION vs. FREQUENCY Frequency, f (GHz) Power (dBm) UPC2708T, UPC2711T Frequency, f (GHz) X: Typical SSB Third Order intercept Point PSAT P1dB X X X VCC = 5.0 V X: Typical SSB Third Order intercept Point Frequency, f (GHz) Power (dBm) UPC2708T POWER vs. FREQUENCY -10 -15 P1dB PSAT VCC = 5.0 V X X X UPC2711T POWER vs. FREQUENCY

TYPICAL PERFORMANCE CURVES (TA = 25°C) UPC2708T OUTPUT POWER vs. INPUT POWER AND TEMPERATURE Output Power, Pout (dBm) -30 -25 -20 -15 -10 -5 0 5 -10 -15 -20 f = 1.0 GHZ VCC = 5.0 V 85˚ C -40˚ C TA = -25˚ C Output Power, Pout (dBm) Input Power, PIN (dBm) -35 -30 -25 -20 -15 -10 -5 0 5 -10 -15 -20 VCC = 5.0 V f = 1.0 GHZ 85˚ C -40˚ C -20˚ C TA = 25˚ C Input Power, PIN (dBm) UPC2711T OUTPUT POWER vs. INPUT POWER AND TEMPERATURE -35 -30 -25 -20 -15 -10 -5 0 5 -10 -15 -20 f = 1.0 GHZ 5.5 V 4.5 V VCC = 5.0 V UPC2711T OUTPUT POWER vs. INPUT POWER AND VOLTAGE UPC2708T UPC2711T Noise Figure, NF (dB) Frequency, f (GHz) UPC2708T OUTPUT POWER vs. INPUT POWER AND VOLTAGE -30 -25 -20 -15 -10 -5 0 5 -10 -15 -20 f = 1.0 GHZ 5.5 V 4.5 V VCC = 5.0 V Output Power, POUT (dBm) Output Power, POUT (dBm) Input Power, PIN (dBm) Input Power, PIN (dBm) UPC2708T, UPC2711T NOISE FIGURE vs. FREQUENCY

TYPICAL SCATTERING PARAMETERS (TA = 25°C) FREQUENCY S 11 S21 S12 S22 K1 S21 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) FREQUENCY S 11 S21 S12 S22 K1 S21 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPC2708T, UPC2711T VCC = 5 V, ICC = 12 mA UPC2711T VCC = 5 V, ICC = 26 mA UPC2708T Note: 1. K factor calculations: 2 |S12 S21| , Δ = S11 S22 - S21 S12

UPC2708T, UPC2711T UPC2708T UPC2711T OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS (Top View) (Bottom View)UPC2708T/UPC2711T PACKAGE OUTLINE T06 +0.2 -0.32.8 1.5 +0.2 -0.1 3 4 1.9±0.2 -0.05 +0.100.3 0.13±0.11.1+0.2 -0.1 0 to 0.1 0.95 0.95 0.8 2.9±0.2 Note: All dimensions are typical unless otherwise specified. Note: Package Markings: C1D - UPC2708T C1G - UPC2711T 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. V CC C1D PART NUMBER QTY UPC2708T-E3 3K/Reel UPC2711T-E3 3K/Reel *Embossed Tape, 8 mm wide.

ORDERING INFORMATION

RECOMMENDED P.C.B. LAYOUT (Units in mm) 3.10 1 6 1.0 MIN

0.5 MIN

0.95 1.0 MIN EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE