UPC2533 NEC | Alldatasheet
Document overview
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Technical content
Features
- Possible to select stations using only one varactor diode with narrow variable capacitance range
- Tracking adjustment unnecessary
- Coil switching between LW (long wave) and MW (middle wave) unnecessary
- Less sensitivity deviation due to tracking error
- High S/N: 60 dB
- Signal meter output with good linearity
- Signal meter output voltage inclination setting possible by external resistor.
- Can be used with IF (intermediate frequency) counter turning system or high/low tuning system. SD Sensitivity Setting Signal Meter Voltage Type Number IF Counter Output High/Low Output Inclination Setting Remarks µPC2533GS-01 Set by pin No. 7 Set by pin No. 9 Depends on SD SD sensitivity of IF counter sensitivity setting system and high/low system can be set independently. µPC2533GS-02 Set by pin No. 7 Set by pin No. 9 Tilt of the signal meter voltage can be set without regard to SD sensitivity.
- L O /DX function on-chip
- Since IFT (intermediate frequency transformer) turn ratio is free from limitation for matching of ceramic filter impedance, it is easy to design MIX gain with IFT. AM TUNER FOR ELECTRONIC TUNING CAR RADIOS The information in this document is subject to change without notice. The mark shows major revised points.Document No. S11989EJ4V0DS00 (4th edition) Date Published August 1998 N CP(K) Printed in Japan
µPC2533
Ordering Information
µPC2533GS-01 36-pin plastic shrink SOP (300 mil) µPC2533GS-02 36-pin plastic shrink SOP (300 mil) Block Diagram Remarks 1. Bold lines indicate flow of audio signal. 2. µPC2533GS-02 pin names are in parentheses. Pins not in parentheses are used in both the µPC2533GS-01 and µPC2533GS-02. RF AGC1 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 1936 2345671 8 9 1 01 11 21 31 41 51 61 71 8 RF AGC2 RF AGC T.C. MIX1IN MIX1OUT MIX1OUT MIX1BYP Buff1IN GND Buff1OUT MIX2BYP MIX2OUT MIX2OUT MIX2IN Buff2IN Buff2OUT IF2IN IF AGC T.C. OSC1 Buff ALC V ref1 LO /DX SEEK SD ACOUT SD ACadj [SDadj] SD IFIN SD DCadj [SMOUT] SD DCOUT OSC2 (B) OSC2 (E) V ref2 MIX2AGC T.C. VO (AF) GND IF2OUT V CC RF AGC driver MIX 1 Buff 1 MIX 2 Buff 2 RF AGC detector MIX 2 AGC IF amplifier AGC comparator Time constant selector switch IF AGCLO /DX OSC Buff Station detectorOSC 1 SEEK Signal meter OSC 2 Detector
µPC2533 Pin Configuration (Top View) 36-pin plastic shrink SOP (300 mil)
- µPC2533GS-01
- µPC2533GS-02 Remark µPC2533GS-02 pin names are in parentheses. Pins not in parentheses are used in both the µPC2533GS-01 and µPC2533GS-02. OSC1 Buff ALC V ref1 LO /DX SEEK SD ACOUT SD ACadj [SDadj] SD IFIN SD DCadj [SMOUT] SD DCOUT OSC2 (B) OSC2 (E) Vref2 MIX2AGC T.C. VO (AF) GND VCC IF2OUT RF AGC1 RF AGC2 RF AGC T.C. MIX1IN MIX1OUT MIX1OUT MIX1BYP Buff1IN GND Buff1OUT MIX2BYP MIX2OUT MIX2OUT MIX2IN Buff2IN Buff2OUT IF AGC T.C. IF2IN
µPC2533 1. Pin Description Names and symbols in parentheses indicate pin names for µPC2533GS-02. Names and symbols not in parentheses are pin names used in both the µPC2533GS-01 and µPC2533GS-02. (1/7) Pin No. Symbol Name Equivalent Circuit
1 OSC1 Buff OSC1 Buff output
2 ALC OSC1 ALC
3V ref1 Reference voltage Reference voltage (5.3 V) 4L O /DX L O /DX control
5 SEEK Seek request
ZO = 30 Ω ±20 % VCC 2 VCC Vref 5 kΩ 60 kΩ
µPC2533 (2/7) Pin No. Symbol Name Equivalent Circuit
6 SD ACOUT SD AC output
7 SD ACadj SD AC sensitivity setting
(and signal meter ouput) [SDadj] [SD AC sensitivity and SD DC sensitivity setting]
8 SD IFIN SD IF input
5 kΩ ( PC2533GS-01)µ 500 Ω 20 kΩ R O = 20.5 kΩ ±20 % VCC ( PC2533GS-02)µ 5 kΩ 5.2 V Vref 60 kΩ 500 Ω
µPC2533 (3/7) Pin No. Symbol Name Equivalent Circuit
9 SD DCadj SD DC sensitivity setting
(and signal meter output) [SMOUT] [Signal meter output]
10 SD DCOUT SD DC output (Active high)
11 OSC2 (B) OSC2 (base)
12 OSC2 (E) OSC2 (emitter)
13 V ref2 Reference voltage Reference voltage (6.0 V) VCC 5 kΩ ( PC2533GS-01)µ ( PC2533GS-02)µ 5 kΩ 5.2 V VCC ZIN = 5 kΩ ±20 % VCC Vref ZO = 240 Ω ±20 %
µPC2533 (4/7) Pin No. Symbol Name Equivalent Circuit 14 MIX2AGC T.C. MIX2 AGC smoothing
15 V O (AF) Audio output
16 GND Ground GND (low frequency)
17 V CC Power supply voltage V CC
18 IF2OUT IF amplifier output
19 IF2IN IF amplifier input
20 IF AGC T.C. IF AGC input VCC R T = 100 kΩ ±20 % R T
14 R T = 1 kΩ ±20 %
ZO = 300 Ω ±20 %
µPC2533 (5/7) Pin No. Symbol Name Equivalent Circuit
21 Buff2OUT 2nd IF burffer output
22 Buff2IN 2nd IF buffer input
23 MIX2IN MIX2 input
24 MIX2OUT MIX2 output
25 MIX2OUT MIX2 output
26 MIX2BYP MIX2 bypass
27 Buff1OUT 1st IF buffer output
ZO = 2 kΩ ±20 % Vref ZIN = 30 kΩ ±20 % ZIN = 330 Ω ±20 % 25 24 ZIN = 330 Ω ±20 % ZO = 330 Ω ±20 %
µPC2533 (6/7) Pin No. Symbol Name Equivalent Circuit
28 GND Ground GND (high frequency)
29 Buff1IN 1st IF buffer input
30 MIX1BYP MIX1 bypass
31 MIX1OUT MIX1 output
32 MIX1OUT MIX1 output
33 MIX1IN MIX1 input
34 RF AGC T.C. RF AGC smoothing ZIN = 15 kΩ ±20 % Vref ZIN = 1.2 kΩ ±20 % 33 30 31 32 Vref ZIN = 1.2 kΩ ±20 % 33 30 ZO = 12 kΩ ±20 %
µPC2533 (7/7) Pin No. Symbol Name Equivalent Circuit
35 RF AGC2 RF AGC output (cascade base)
36 RF AGC1 RF AGC output (PIN diode)
ZO = 11 kΩ ±20 % ZO = 22 kΩ ±20 %
µPC2533 2. Operation of Each Block
2.1 FR Amplifier Circuit Block
Fig. 2-1 RF Ampliier Circuit VCC LPF L4 L5 C6 C3 C4 C5 +C2 L1 Q2 MIX1 RF AGC L O /DXNote From MIX2 Note LO : 3 V or higher DX : 1 V or lower In the AM band, the capacitance of a car radio antenna depends on its length, diameter, cable length, etc. Therefore, J-FET is used in the µPC2533 to raise RF input impedance. Since the µPC2533 raises the first IF (intermediate frequency) to 10.71 MHz, there is no need for a tuning circuit between the RF amplifier circuit and MIX1. Instead, it employs an LPF (about 6 MHz) consisting of L4, L5 and C3 to C5 between the RF amplifier circuit and MIX1 in order to cut image frequency (21.4 MHz or higher). Because this allows a wide-band RF amplifier circuit to be configured without using a tuning circuit, frequency sensitivity deviation can be minimized to a high degree. The AGC circuit consists of RF AGC1 by the PIN diode connected to the FET gate and RF AGC2 by the cascade transistor Q1. Use a low-noise transistor even with low current for the cascade transistor Q1 (if a high-noise one is used, the S/N ratio deteriorates). Remark Set bias voltage for cascade transistor Q1 to V C > VB.
µPC2533
2.2 MIX1 Block
Fig. 2-2 MIX1 Block Note Output impedance and input impedance of Buff1 are 330 Ω and 15 kΩ , respectively. MIX1 (Q101 to Q108) is a DBM (double balanced mixer). MIX1 output is supplied to 10.7 MHz ceramic filter via Buff1 (output impedance: 330 Ω ) for impedance matching. The local oscillation signal is applied to the bases of Q101 to Q104, and the RF signal to the base of Q105. MIX1 (Q101 to 108) multiplies the local oscillation signal by RF signal, and converts to the resonance frequency of IFT T1 for output. The local oscillation signal is output from pin 1 via Q109 (OSC Buff). It has an amplitude of 110 dBµV and can be directly input to CMOS LSI for use by the PLL synthesizer. The RF signal applied to the base of Q105 is also input to the detector of the RF AGC circuit. 23 3 2 17 29 27 R11 Q109 Q105 VT VCC R107 Q106 Q107 Q108 R108 R109 R110 R111 R112 Buff1 Q104 Q103Q102 Q101 Bias circuit To RF AGC circuit (Fig. 2-4) To 10.7 MHz BPF From LPF Note OSC1
µPC2533
2.3 MIX2 Block
Fig. 2-3 MIX2 Block 28 23 17 24 25 14 13 12 11 22 21 VCC Note Xtal R211 R212 R210 R209 R207 R208 Q205 Q206 Q207 Q208 Q201 Q202 Q203 Q204 Q203 OSC2 Buff2 To IF amplifier Bias circuit To RF AGC circuit (Fig. 2-4) From IF AGC (Fig. 2-6) Current control circuit Note From 10.7 MHz BPF Note Output impedance and input impedance of Buff2 are 2 kΩ and 30 kΩ , respectively. MIX2 (Q201 to Q208) is a DBM with a configuration similar to that of MIX1. The major difference from the MIX1 is that MIX2 is equipped with a current control circuit for output and is controlled by the AGC. Input impedance of MIX2 is 330 Ω to match the 10.7 MHz ceramic filter. Output impedance of Buff2 is 2 kΩ to match the 450 kHz ceramic filter. IF signal input from pin 23 is also input to the detector of the RF AGC. The RF AGC is detected by both MIX1 and MIX2 blocks. The Buff1 and Buff2 ensure impedance matching between MIX1 and MIX2 outputs and each ceramic filter. As a result, IFT design is not restricted by the need to match ceramic filter impedance. For turn ratio, etc., only conversion gain need be taken input account, so it is easy to design.
µPC2533
2.4 RF AGC Block
Fig. 2-4 RF AGC Block 3536 34 R402 Q402 Q403 Q401 R403 R405 Q405 Q404 R404 R406 D401 R408 Q406 R409 R410 Q407 Q408 R412 AMP. AMP. Bias circuit Time constant switchover To RF amplifier circuit (Fig. 2-1) Detection and addition circuit From MIX2 (Fig. 2-3) From MIX1 (Fig. 2-2) The configuration of the RF AGC is shown in Fig. 2-4. After being detected by the RF AGC detector and added, the input signal from MIX1 and MIX2 is smoothed by external capacitor of pin 34, and its DC voltage controls the RF AGC. RF AGC output controls the PIN diode from pin 36 and controls base voltage of cascade transistor which determines FET VDS from pin 35. In addition, by detecting sudden fluctuation of pin 34 voltage and switching over time constants, RF AGC response convergence when the electric field suddenly changes is improved. Operation start time of the RF AGC can be delayed slightly by connecting a resistor parallel to the external capacitor of pin 34.
µPC2533
2.5 IF Amplifier Block and Detection Block
Fig. 2-5 IF Amplifier and Detection Block Bias circuit 19 18 R19 C19 R301 R302 Q301 R304 IF amp R303 Q302 VCC From 450kHz BPF To SD circuit Audio output From IF AGC circuit (Fig. 2-6) To IF AGC circuit (Fig. 2-6) In the IF amplifier block, DC feedback is carried to pin 19 via an external low pass filter (composed of T3 and C19) from pin 18, an output pin. The DC electric potential of pin 18 is designed to be fixed approximately equal to the (+) side input of the IF amplifier. The value of R19 is the input impedance, so impedance matching to 450 kHz ceramic filter is possible. The output signal current of the IF amplifier is converted to signal voltage by being resonated by T3 and input to the detection circuit after frequency selection. Emitter follower detection by Q302 is adopted for the detection circuit block.
µPC2533
2.6 IF AGC Block
Fig. 2-6 IF AGC Block (for µPC2533GS-01) IF AGC block configuration is shown in Fig. 2-6. The signal detected from pin 15 is smoothed by the capacitor of pin 20, and its DC voltage controls the IF AGC. The IF AGC controls the IF amplifier and MIX2. In the operation sequence, it first controls the gain of the IF amplifier, then controls the gain of MIX2. The signal meter circuit output (current output) is in proportion to the DC voltage smoothed by pin 20, and converted to voltage by the external resistor of pin 7 or 9. Therefore, output voltage value and gain can be set by the value of the external resistor. Note Note For relation between the external resistor and the signal meter, refer to Signal meter output voltage (adjustment by resistor between pin 9 and GND) in section 4. Characteristic Curves. Bias circuit 7 209 Q501 Q503 Q502 D501 Q504 D502 R501 5 kΩ R502 5 kΩ VCC To MIX2 (Fig. 2-3) To IF amp. (Fig. 2-5)From detection circuit (Fig. 2-5) Signal meter circuit Time constant switchover Note To SD circuit (Fig. 2-7) From SD circuit (Fig. 2-7) Note In the case of PC2533GS-02, the part enclosed by the dotted line is illustrated as shown below. µ R501 5 kΩ R502 5 kΩ Voltage limiter
µPC2533
2.7 Station Detector Circuit Block
Fig. 2-7 Station Detector Circuit Block The configration station detector (SD) circuit block is shown in Fig. 2-7. The SD circuit stops scanning or seeking when a broadcast wave is received when auto scanning or seek tuning. Since the µPC2533 has two outputs (DC high/low signal (open collector) and AC IF signal (f = 450 kHz)), it can be used according to DTS (digital tuning system) type. Input the SD request signal from DTS to pin 5. The SD sensitivity setting methods of the µPC2533GS-01 and µPC2533GS-02 differ. With the µPC2533GS-01, SD sensitivities in the IF counter output system and in the high/low output system are set by external resistor between pin 7 and GND and by external resistor between pin 9 and GND. With the µPC2533GS-02, SD sensitivities in both the IF counter output system and high/low output system are set by external resistor between pin 7 and GND (refer to Fig. 2-6). Table 2-1 SD Sensitivity Setting Examples Value of Resistor between Pin 9 or Pin 7 and GND SD Sensitivity (AC, DC) 51 kΩ 27 dBµV 24 kΩ 29 dBµV 10 kΩ 33 dBµV Bias circuit Bias circuit 10 5 6 8 1.0 V ON/OFF 1.0 V Detection comparator 1 Detection comparator 2 From signal meter circuit (Fig. 2-6) To time constant switchover circuit (Fig. 2-6) From DTS (request) SD output (Active high) SD AC output 450kHz IF input (from T3)
µPC2533 The reference voltage of the µPC2533-01 and µPC2533-02 detection comparator has been internally fixed at 1.0 V. Under the influence of R501 (5 kΩ ) and R502 (5 kΩ ) of the siganl meter circuit (Fig. 2-6), signal meter output voltage and detection comparator input voltage do not perfectly coincide. For SD sensitivity setting, refer to the following formula. Detection comparator input voltage = Signal meter output voltage × (1 + R501 ) Value of resistor between pin 7 and GND Remark Because DC output is open-collector type (Active high), connect pull-up resistor to pin 10 to use.
µPC2533 3. Electical Characteristics Absolute Maximum Ratings (TA = 25 °C) Item Symbol Rating Unit Power supply voltage V CC 10 V Power dissipation P D 600 mW Operating ambient temperature T A –40 to +85 °C Storage temperature T stg –55 to +125 °C Caution Exposure to Absolute Maximum Ratings for extended periods may affect device reliability; exceeding the ratings could cause permanent damage. The parameters apply independently. The device should be operated within the limits specified under DC and AC Characteristics. Recommended Operating Conditions (T A = 25 ˚C) Item Symbol Conditions MIN. TYP. MAX. Unit Power supply voltage V CC 7.5 8.0 8.5 V Input voltage V IN 132 dB µV
Electrical Characteristics
(Unless specified, TA = 25 °C, VCC = 8 V, fIN = 999 kHz, fMOD = 400 Hz, AMMOD = 30 %, RSD1 (resistor between pin 7 and GND) = RSD2 (resistor between pin 9 and GND) = 24 kΩ , 15-pin measurement load = 100 kΩ ) Item Symbol Conditions MIN. TYP. MAX. Unit Circuit current I CC No input (excluding FET) – 45 55 mA Detection output V O VIN = 74 dBµV 150 180 210 mVrms Signal-to-noise ratio S/N V IN = 74 dBµV5 3 6 0 – d B Total harmonic distortion 1 THD1 V IN = 74 dBµV – 0.3 1.0 % Total harmonic distortion 2 THD2 V IN = 74 dBµV, AMMOD = 80 % – 0.7 1.0 % Total harmonic distortion 3 THD3 V IN = 130 dBµV, AMMOD = 80 % – 0.7 1.5 % Signal meter output voltage 1 V S1 No input – 0 0.2 V Signal meter output voltage 2 V S2 VIN = 30 dBµV 0.5 1.5 2.5 V Signal meter output voltage 3 Note VS3 VIN = 74 dBµV 4.8 5.5 6.7 V (4.3) (5.0) (5.5) Local buffer output 1 V OSC 1-pin load: 20 pF or less 106 110 114 dB µV Note Specifications in parentheses for signal meter output voltage 3 are for µPC2533GS-02. Values of other items are the same for µPC2533GS-01 and µPC2533GS-02.
µPC2533 Reference Characteristics Item Symbol Conditions MIN. TYP. MAX. Unit Maximum sensitivity MS V IN making VO –10 dB, where – 13 – dB µV VO = 0 dB at VIN = 74 dBµV S/D sensitivity (AC) SS(AC) V IN making SEEK, SD AC – 29 – dB µV OUT level 101 dBµV or more S/D sensitivity (DC) SS(DC) V IN making SEEK, SD AC – 29 – dB µV OUT voltage 4.8 V or more S/D output time T-SD Delay time from the time when 0 5 25 ms changing SEEK VIN = 0 → 40 dB µV to the time when pin 10 voltage becomes 4.8 V or more Vo stabilization time T-V O VIN = 60 → 100 dBµV, 60 160 260 ms VO = ±3 dB Tweet TW V IN = 74 dBµV, 2IF – 60 – dB 2nd local buffer negative Z OSC 2 Maximum value of a series 400 – – Ω impedance resistor with which the crystal can oscillate Usable sensitivity US V IN making S/N = 20 dB – 25 – dB µV
µPC2533 4. Characteristic Curves Input/Output Characteristics (1) Total harmonic distortion THD (%), Signal meter voltage (V) –10 –20 –30 –40 –50 –60 –70 0 10 20 30 40 50 60 70 80 90 100 110 120 130 MS (VO = –10 dB) Noise Total harmonic level VO (dB), Noise (dB) MS = 14 dB Vµ US = 25 dB Vµ Signal input level (dB V)µ VO US (at S/N=20 dB) VCC =8 V fIN = 999 kHz fMOD = 400 Hz AM MOD = 30 % R SD1 = RSD2 = 24 kΩ THD 30 % THD 80 % Signal meter voltage µ( PC2533GS-01) µ( PC2533GS-02) Input/Output Characteristics (2) Noise VCC = 8 V fIN = 216 kHz fMOD = 400 Hz AM MOD = 30 % R SD1 = RSD2 = 24 kΩ VO 0 10 20 30 40 50 60 70 80 90 100 110 120 130 MS = 12.5 dB Vµ US = 28 dB Vµ Signal input level (dB V)µ Total harmonic distortion THD (%), Signal meter voltage (V) –10 –20 –30 –40 –50 –60 –70 Detection output level VO (dB), Noise (dB) US (at S/N=20 dB) THD 30 % THD 80 % Signal meter voltage µ( PC2533GS-01) µ( PC2533GS-02) MS (VO = –10 dB)
µPC2533 Input/Output Characteristics (3) (FET Load: 255 Ω ) (Reference Only) VO 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Signal input level (dB V)µ –10 –20 –30 –40 –50 –60 –70 Detection output level VO (dB), Noise (dB) VCC = 8 V fIN = 999 kHz fMOD = 400 Hz AM MOD = 30 % R SD1 = RSD2 = 24 kΩ Noise Input/Output Characteristics (4) –10 –20 –30 –40 –50 –60 –70 0 1 02 03 04 05 06 0 7 0 8 09 0 1 0 0 1 2 0 110 130 Detection output level VO (dB), Noise VN (dB) Signal input level (dB V)µ VO VO VN VN LO /DX low LO /DX high VCC = 8 V fIN = 999 kHz fMOD = 400 Hz AM MOD = 30 % R SD1 = RSD2 = 24 kΩ 29 dB
µPC2533 Cross-Modulation Characteristics (40 kHz Detuning) –10 –20 –30 –40 –50 –60 50 60 70 80 90 100 110 120 130 140 Detection output level VO (dB) Interference signal input level (dB V)µ VCC = 8 V Desired: f = 999 kHz Interference: f = 1039 kHz Desired: V = 100 dB V 80 dB V µ µ Desired: V = 40 dB Vµ 100 dB Vµ Desired: 400 Hz 30% modulation; interference: non-modulation Desired: non-modulation; interference: 400 Hz 30% modulation Desired: non-modulation; interference: non-modulation 40 dB Vµ 60 dB Vµ 45 dB Vµ 45 dB Vµ 60 dB Vµ 80 dB Vµ Cross-Modulation Characteristics (40 kHz Detuning, FET Load 255 Ω ) (Reference Only) Desired: V = 100 dB V 80 dB V µ µ 60 dB Vµ VCC = 8 V Desired: f = 999 kHz Interference: f = 1039 kHz 0 60 70 80 90 100 110 120 130 140 Interference signal input level (dB V)µ –10 –20 –30 –40 –50 –60 Detection output level VO (dB) Desired: 400 Hz 30% modulation; interference: non-modulation Desired: non-modulation; interference: 400 Hz 30% modulation Desired: non-modulation; interference: non-modulation 45 dB Vµ40 dB Vµ Desired: V = 40 dB Vµ 45 dB Vµ 65 dB Vµ 80 dB Vµ 100 dB Vµ
µPC2533 Cross-Modulation Characteristics (400 kHz Detuning) VCC = 8 V Desired: f = 999 kHz Interference: f = 1399 kHz 60 70 80 90 100 110 120 130 140 Interference signal input level (dB V)µ –10 –20 –30 –40 –50 –60 Detection output level VO (dB) Desired: 400 Hz 30% modulation; interference: non-modulation Desired: non-modulation; interference: 400 Hz 30% modulation Desired: non-modulation; interference: non-modulation 100 dB Vµ 40 dB Vµ Desired: V = 100 dB V 80 dB V µ µ 60 dB Vµ Desired: V = 40 dB Vµ 80 dB Vµ 60 dB Vµ Power Supply Voltage Characteristics –10 –20 –30 –40 –50 –60 6789 1 0 V THD 80 % THD 30 % Detection output level VO (dB), signal-to-noise ratio S/N (dB) Power supply voltage (V) Total harmonic distortion THD (%), Signal meter output voltage 2 VS2 (V) Signal meter output voltage 3 VS3 (V) SS MS US S/N VS3 VO Recommended operating range Maximum sensitivity MS (dB V), usable sensitivity US (dB V), S/D sensitivity SS (dB V) µ µ µ
µPC2533 Modulation Factor Characteristics Modulation factor (% ) 600 500 400 300 200 100 0 40 60 80 100 VO THD Total harmonic distortion THD (%) Detection output level VO (mVrms) VCC = 8 V fIN = 999 kHz Detuning Frequency Characteristics (Maximum Sensitivity), Signal Selectivity Characteristics Signal input level (dB V) µ Detuning frequency (kHz) –10 –5 0 10 15 5–15
µPC2533 Modulation Frequency Characteristics –10 –20 –30 –40 –50 –60 50 100 500 1k 5k 10k Total harmonic distortion THD (%) Detection output level (dB) Modulation frequency (Hz) THD VCC = 8 V VO Signal Meter Output Voltage (Adjustment by Resistor between Pin 9 and GND) 0 1 02 03 04 05 06 0 8 0 70 90 100 Signal meter output voltage (V) 36 kΩ (24 kΩ ) 20 kΩ 12 kΩ 6.2 kΩ (6.2 kΩ ) 1 kΩ (1 kΩ ) Signal input level (dB V)µ 24 kΩ (51 kΩ ) VCC = 8 V fIN = 999 kHz AM MOD = 30 % fMOD = 400 Hz 51 kΩ Remark Figures in parentheses indicate setting value (resistor between pin 9 and GND) for µPC2533GS-02. A circuit that restricts output current from pin 9 is mounted on µPC2533GS-02.
µPC2533 Receiving Frequency Characteristics –10 –20 –30 –40 –50 –60 –70 VO US S/N Detection output level VO (dB), signal-to-noise ratio S/N (dB) Receiving frequency (MHz ) Maximum sensitivity MS (dB V), usable sensitivity US (dB V) µ µ MS (LW band) (MW band) (LW band) (LW band) (MW band) (MW band) (MW band) (LW band) Temperature Characteristics (Signal Meter Voltage vs. Operating Ambient Temperature) VS3 Signal meter output voltage 2 VS2 (V), signal meter output voltage 3 VS3 (V) –40 –20 0 20 40 60 80 100 Operating ambient temperature TA (°C) VS2
µPC2533 Temperature Characteristics (Maximum Sensitivity, Usable sensitivity vs. Operating Ambient Temperature) Temperature Characteristics (Detection Output Level, Signal-to-Noise Ratio vs. Operating Ambient Temperatue) –40 –20 0 20 40 60 80 100 Operating ambient temperature TA (°C) Usable sensitivity Maximum sensitivity Maximum sensitivity, Usable sensitivity (dB V) µ 200 180 160 140 120 100 40 –40 –20 0 20 40 60 80 100 –10 –20 –30 –40 –50 –60 –70 –80 Detection output level VO (mVrms) Signal-to-noise ratio S/N (dB) VO S/N Operating ambient temperature TA (°C)
µPC2533 Temperature Characteristics (THD vs. Operating Ambient Temperatue) Total harmonic distortion THD (%) Operating ambient temperature TA (°C) THD2 –40 – 2 00 2 04 06 08 0 1 0 0 THD1 THD3 Input: 74 dB V Modulation factor: 30 % Input: 74 dB V Modulation factor: 80 % Input: 130 dB V Modulation factor: 80 % µ µ µ
µPC2533 5. Measurement Circuit Remark Pin names in parentheses are those of µPC2533GS-02. Dummy antenna 65 pF15 pF 30 Ω SG IN 2SK1000 3300 pF +47 F µ 0.022 F µ 47 pF 150 pF 100 pF 50 Ω 2SC1844 510 Ω 12 H µ 22 Ω 0.047 F µ 10 F µ 0.022 Fµ T1 T2 0.022 F µ 0.022 F µ 0.022 F µ 0.022 Fµ 50 Ω 0.047 F µSFE10.7MHY-A CFWS450HT 4.7 F 2.2 F µ 2 kΩ OSC1 Buff OUT 0.01 F µ 100 kΩ 47 pF 330 pF VTUNE 1 Fµ 0.01 Fµ R SD1 SDIN R SD2 15 pF 0.01 Fµ47 pF 10.26 MHz0.047 F µ 10 F µ 2.7 kΩ 47 F µ 0.033 F µ 0.01 F µ VCC AUDIO OUT LO /DX (LO : 3 V or higher; DX: 1 V or lower) SEEK (ON: 1.5 V or higher; OFF: 0.3 V or lower) SD AC OUT SD ACadj [SDadj] SD DC OUT SD DCadj [SMOUT] OSC BuffOSC1SEEK L O/DX AGC comparator RF AGC detection Station detector RF AGC driver Signal meter OSC2 Time constant selector switch Detector IF AGC MIX2 AGC IF amplifier MIX1 Buff1 Buff2MIX2 12345678 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 26 25 24 23 22 21 20 1927 28 29 30 31 32 33 34 35 36 12 H µ pF kΩ 5 V KV1310 (TOKO, Inc.) (6)(3) (4)(2) (1)
µPC2533 Coil Specifications (TOKO, Inc.) Product No. Connection Diagram Prototype No. Specifications L1 X119FNS-16314Z (1) - (3) 15T L = 4.7 µH Qu > 60 L2 388DN-1043BS (4) - (6) 1440T L = 100 mH Qu > 45 L3 247BR-0147Z (1) - (3) 274T L = 2 mH Qu > 50 8T 4T 4T L = 1.8 µH Qu > 70 14T 7T 7T (4) - (6) C = 43 pF 3T Qu > 50 fO = 10.7 MHz 152T 76T 76T (4) - (6) C = 180 pF 40T Qu > 25 fO = 450 kHz 148T 43T 105T (4) - (6) C = 180 pF 30T Qu > 40 ±20 % f O = 450 kHz
- BPF SFE10.7 MHY-A (MURATA mfg. Co., Ltd.) CFWS450HT (MURATA mfg. Co., Ltd.)
- RF FET 2SK1000 (NEC) (3) (2) (1) (4) (6) (3) (2) (1) (4) (6) (3) (2) (1) (4) (6) (3) (2) (1) (4) (6) (3) (2) (1) (4) (6) (3) (2) (1) (4) (6) (3) (2) (1) (4) (6)
µPC2533 6. Package Drawing 11 8 1936 S S M
36 PIN PLASTIC SSOP (300 mil)
Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. A BC N E ITEM MILLIMETERS B 0.97 MAX. C 0.8 (T.P.) A 15.3 ±0.24 D 0.37 E 0.125 ±0.075 M 0.10 N 0.10 R5 °±5° P36GM-80-300B-4 G 1.55 L 0.6 ±0.2 detail of lead end R K L G F H 7.7 ±0.3 I 5.6 ±0.15 J 1.05 ±0.2 K 0.22 +0.08 −0.07 +0.08 −0.07 DM H I J F 1.675 +0.125 −0.175
µPC2533 7. Recommended Soldering Conditions When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Surface mount device µPC2533GS-01, 2533GS-02: 36-pin plastic shrink SOP (300 mil) Process Conditions Symbol Infrared ray reflow Peak temperature: 235 °C or below (Package surface temperature), IR35-00-2 Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 2 times. VPS Peak temperature: 215 °C or below (Package surface temperature), VP15-00-2 Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 2 times. Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). Partial heating method Pin temperature: 300 °C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress.
µPC2533 [MEMO]
µPC2533 [MEMO]
µPC2533 [MEMO] The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5